A Simplified Methodology

for the Extraction of Parameters

of the ACM MOST Model
Rafael M. Coitinho, Lus H. Spiller,
Mrcio C. Schneider, Carlos Galup-Montoro

Integrated Circuits Laboratory

Departament of Electrical Engineering
Universidade Federal de Santa Catarina
Florianpolis, SC - Brasil - CEP 88040-970
TAMU Seminar Nov 26/2001

Contents
The ACM Model
ACM Parameters
Mapping BSIM to ACM
Extraction of ACM Parameters:
Simulation

Experiment

TAMU Seminar Nov 26/2001

ACM MODEL
ADVANCED COMPACT
MOSFET MODEL

A physically based MOSFET model

Accurate in all regions of operation
Source-to-drain intrinsic symmetry
Charge conservation
Small set of parameters

TAMU Seminar Nov 26/2001

MOS transistor modeling

Forward and reverse currents:

ID =IF -IR =I(VG ,VS )-I(VG ,VD )

For large VD, IR0; therefore, ID= IF- IR IF

TAMU Seminar Nov 26/2001

The current-based model

where:

IS ISQ

W
L

ID IF IR
ISQ

or

I D IS ( i f i r )

2t
nCox
2

IF(R): forward (reverse) current

if(r): inversion level at source (drain)

IS: specific (normalization) current

ISQ: specific (normalization) sheet current is weakly dependent on VG [(VG),
n(VG)] ISQ is a technological parameter
All large- and small-signal parameters can be written in terms of if and
ir current-based model, appropriate for electrical characterization,
hand analysis and design

TAMU Seminar Nov 26/2001

The I x V relationship

VP VS( D) t 1 if ( r ) 2 ln 1 if ( r ) 1

a) weak inversion: if(r)<<1

I D 2IS exp(

VP VS( D)

VG VT 0 nVS
V
1)[1 exp( DS )]
nt
t

VG -VT0
n

i f ( r )

t 1 ln
2

VP

b) strong inversion at source and drain: if(r)>>1

nC'ox W
ID
[VP VS 2 VP VD 2 ]
2 L

c) forward saturation: if>>ir ID is (almost) independent of VD

c1) weak inversion:

c2) strong

I D 2ISQ

V VT 0 nVS
W
exp( G
1)
L
nt

C'ox W
W VG VT 0 nVS
2

nV

S
SQ
inversion D 2n L G T0
L
nt

TAMU Seminar Nov 26/2001

Common-source characteristics of NMOS transistor in saturation

ID (A)
-3
1.00E-03
10

1.00E-04

VDD
1.00E-05

iD
1.00E-06

10-6

1.00E-07

vG

vS

VS = 0 V

0.5

1.0

1.5

1.00E-08

2.0

2.5

3.0

70 to 90 mV/dec
1.00E-09

10-90.00E+00
0

5.00E-01

1.00E+00

1.50E+00

2.00E+00

2
VG (V)

2.50E+00

3.00E+00

3.50E+00

4.00E+00

4.50E+00

4
VD = VG

tox = 280 , W= L = 25 m, VDD=5V

(______) ACM model (o) experimental

TAMU Seminar Nov 26/2001

Second order effects

Drain-induced barrier lowering VT depends on both VD and VS
^

VT0 =VT0 -(VS +VD )/2

=SIGMA/L2eff
V -V

L=PCLM LC ln 1+ DS DS,SAT
LC UCRIT

Channel length modulation

Mobility reduction due to transversal field

o
1+(VGS -VT0 )

Velocity saturation
vlim=5x106 to 2x107cm/s

vlim

TAMU Seminar Nov 26/2001

UCRIT

ACM Parameters

TAMU Seminar Nov 26/2001

Mapping BSIM to ACM

TAMU Seminar Nov 26/2001

Strategy for parameter extraction:

Parameters derived from device physics

Bias the MOSFET in a region where the parameter to be extracted

has significant effects
Avoid optimization

If a parameter is difficult to extract, then its effects are not

important

TAMU Seminar Nov 26/2001

 Extraction of IS (strong inversion I>>IS)

Strong inversion & saturation

VG -VT0 -nVS
I IS

nt

I
IS I
2VS

I=40A
I=4A
VS/t=0.57

IS 310nA

A more accurate method, based on the gm/ID characteristic,

can be used to determine IS
TAMU Seminar Nov 26/2001

 Extraction of VT0
ACM Model:
VP -VS =t 1+if -2+ln

1+if -1

VP

VG -VT0
n

if=3

VG VT 0

I 3 IS

VG VT 0
VTO 0.845 V

TAMU Seminar Nov 26/2001

 Extraction of VP

Extraction of n
I 3IS

dVP
n

dV
G

Calculation of GAMMA ()
2F=0.7, VGB=2.5V, n=1.25, VP = 1.23

n 1
2 2 F VP
TAMU Seminar Nov 26/2001

GAMMA 0.69 V

 Extraction of 0 (U0) and (THETA)

Strong inversion, linear region

nC'ox W
ID
[VP VS 2 VP VD 2 ]
2 L

(VG -VT0 ) VDS

VD +VS
W
1
ID =nC
(VP ) VD -VS ;

for small VDS

W
L
2
ID
C'ox
L
'
ox

The plot
VDS VG -VT0
ID

ID

versus VG -VT0

allows determining
slope (VG-VT0)
VDS

TAMU Seminar Nov 26/2001

C'ox

W
L

 Extraction of 0 (U0) and (THETA)

y-axis intersection
slope A

TAMU Seminar Nov 26/2001

0
1+ VG -VT0

514 cm2 / V s

C'OX W / L B
W
'
0 COX A 0.20V 1
L

Short-channel effects:
DIBL
CLM
Weak avalanche

Short-channel parameters are determined from either output

conductance or voltage gain
Typically, for short channel devices, DIBL is dominant in
weak inversion while CLM prevails in strong inversion

TAMU Seminar Nov 26/2001

Extraction of SIGMA (weak inversion)

SIGMA Leff

gm d
1

Gain
gm g

VT VT 0 VD VS 2
SIGMA 3.2 1015m2

TAMU Seminar Nov 26/2001

 Extraction of PCLM (strong inversion)

VDS VDSAT
L PCLM LC ln 1

U
C
CRIT

VMAX
U CRIT
U0
PCLM

L eff

dVA
LC
dVDS

L C Si

I
D
1
1
IS

Xj
Cox

t
L eff U CRIT

PCLM 1.23
TAMU Seminar Nov 26/2001

Results

TAMU Seminar Nov 26/2001

Results
Simulation of an n-MOS transistor using
Smash from Dolphin

Parameters:
AMS 0.8m
BSIM 3V3

TAMU Seminar Nov 26/2001

Conclusions

Advantages
Simple & Fast
Provides good results with low-cost
equipment
Simple equations that emphasize the
physical meaning of parameters

Disadvantages
The extraction from simulation is
dependent of the available models.
TAMU Seminar Nov 26/2001

Links
Integrated Circuits Laboratory
http://www.eel.ufsc.br/lci/
SMASH Circuit Simulator, Dolphin
Integration, Meylan, France.
http://www.dolphin.fr
Austria Mikro Systeme Internacional AG
http://www.ams.co.at
BSIM3 Homepage:
http://www-device.ECCS.Berkley.EDU/~bsim3

TAMU Seminar Nov 26/2001