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POLISHING
Polishing is the final step, or steps, in producing a
deformation-free surface that is flat, scratch free,
and mirror-like in appearance. Such a surface is
necessary to observe the true microstructure
for subsequent metallographic interpretation,
both qualitative and quantitative. The polishing
technique used should not introduce extraneous
structures such as disturbed metal (Figure 19), pitting (Figure 20), dragging out of inclusions,comet
tailing (Figure 21), staining (Figure 22) or relief
Figure 22. Staining (arrow) on the surface of a of Ti-6% Al-2% Sn4% Zr-2% Mo prepared specimen (200X).
Mechanical Polishing
Polishing
Electrolytic Polishing
b
Figure 23. Examples of freedom from relief (a, top) and minor
relief (b, bottom) at the edges of large primary hypereutectic
silicon particles in an as-cast Al-19.85% Si specimen (200X,
aqueous 0.5% HF).
b
Figure 24. Differences in relief control in a brazed specimen
containing shrinkage cavities: a) (top) poor control; and, b)
(bottom) good control (100X, glyceregia).
Polishing
Automated Polishing
Mechanical polishing can be automated to a high
degree using a wide variety of devices ranging
from relatively simple systems, Figure 25, to rather
sophisticated, minicomputer, or microprocessor
controlled devices, Figure 26. Units also vary in
capacity from a single specimen to a half dozen or
Polishing Cloths
The requirements of a good polishing cloth
include the ability to hold the abrasive media,
long life, absence of any foreign material that
may cause scratches, and absence of any processing chemical (such as dye or sizing) that
may react with the specimen. Many cloths of
different fabrics, weaves, or naps are available
for metallographic polishing. Napless or low nap
cloths are recommended for coarse polishing
with diamond abrasive compounds. Napless,
low, medium, and occasionally high nap cloths
are used for final polishing. This step should be
brief to minimize relief. Table 6 lists Buehlers
line of polishing cloths, their characteristics and
applications.
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Polishing
Recommended
m Size Abrasive
Range
Types
Cloth
Usage
Characteristics Guide Applications
UltraPad
15 - 3 Diamond Hard Woven, Used to Replace
Ferrous
No Nap with High
Multiple SiC
Materials and
Material Removal
Grinding Steps Thermal
Spray Coatings
UltraPol*
15 - 1 Diamond Hard Woven, Excellent Surface
Minerals, Coal,
No Nap
Finish Used to Retain
and Ceramics,
Flatness in Medium
Inclusion Retention
to Hard Specimens
in Steels, and
Refractory Metals
Nylon*
15 - 1 Diamond
Medium-Hard Used to Retain
Woven, No Nap
Flatness and
Hard Phases
Ferrous Materials,
Sintered Carbides
and Cast Irons
TexMet P
15 - 3 Diamond Hardest Perforated Used for Material
Non-woven Pad Removal and
for High Material
Flatness of
Removal Hard Specimens
Ceramics, Carbides,
Petrographic, Hard
Metals, Glass, Metal
Matrix Composites
TexMet
15 - 3 Diamond, Hard Non-woven Used for Harder Hard Ferrous
Pad used for
Specimens and
Materials
Al2O3
Durability
Increased Flatness
and Ceramics
TriDent*
9 - 1 Diamond
Softer, Used to Maximize
Durable,
Flatness and
Woven Synthetic, Retain Phases while
No Nap
Providing Excellent
Surface Finish
Ferrous and
Nonferrous Metals,
Microelectronics,
Coatings
VerduTex*
15 - 1 Diamond Durable, Medium Used for Rough
Hard Synthetic
and Final Polishing
Silk
VelTex
9 - 1 Diamond
Short-napped,
Ideal for
Synthetic
Final Polishing
Velvet
WhiteFelt
6 - 0.02 Diamond,
Soft and
Al2O3, SiO2 Durable Matted
Wool Cloth
General Usage
Ferrous and
for Intermediate
Nonferrous Materials
to Fine Steps
MicroCloth
5 - 0.02 Diamond,
Synthetic Cloth
Most Popular
with Medium Nap
General
Al2O3, SiO2
Usage Final
Polishing Cloth
Ferrous and
Nonferrous
Metals, Ceramics,
Composites, PCBs,
Cast Irons, Cermets,
Plastics, Electronics
MasterTex
1 - 0.05
Al2O3, SiO2
Soft Synthetic
Softer Final
Velvet with
Polishing Cloth
Low Nap
ChemoMet
1 - 0.02
Al2O3, SiO2
Soft Synthetic
Pad, Micro-nap
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Polishing
Polishing Abrasives
Polishing usually involves the use of one or more
of the following abrasives: diamond, aluminum
oxide (Al 2O 3), and amorphous silicon dioxide
(SiO2) in collidal suspension. For certain materials, cerium oxide, chromium oxide, magnesium
oxide or iron oxide may be used, although these
are used infrequently. With the exception of diamond, these abrasives are normally suspended in
distilled-water, but if the metal to be polished is
not compatible with water, other suspensions such
as ethylene glycol, alcohol, kerosene or glycerol,
may be required. The diamond abrasive should
be extended only with the carrier recommended
by the manufacturer. Besides the water-based
diamond suspension, Buehler also offers oil-based
suspensions that are needed to prepare materials
sensitive to water.
Diamond abrasives were introduced to metallographers commercially in the late 1940s. However,
their use in metallography goes back to at least
the late 1920s, as Hoyt [7] mentions a visit to
the Carboloy plant in West Lynn, Massachusetts,
where he saw sapphire bearings being polished
with diamond dust in an oil carrier. He used some
of this material to prepare sintered carbides and
published this work in 1930. Diamond abrasives
were first introduced in a carrier paste but later
aerosol and slurry forms were introduced. Virgin
natural diamond was used initially, and is still
available as MetaDi diamond paste. Later, synthetic
b
Figure 27. Comparison of monocrystalline (a, top) and
polycrystalline (b, bottom) synthetic diamond grain shapes (SEM,
450X).
diamond was introduced, first of the monocrystalline form, similar in morphology to natural
diamond, and then in polycrystalline form. MetaDi
II diamond pastes and MetaDi suspensions use
synthetic monocrystalline diamond while MetaDi
Supreme suspensions and paste use synthetic
polycrystalline diamonds. Figure 27 shows the
shape differences between monocrystalline and
polycrystalline diamonds. Studies have shown that
cutting rates are higher for many materials using
polycrystalline diamond compared to monocrystalline diamond.
Colloidal silica was first used for polishing wafers
of single crystal silicon where all of the damage
on the wafer surface must be eliminated before
a device can be grown on it. The silica is amorphous and the solution has a basic pH of about
9.5. The silica particles are actually nearly spherical
in shape, Figure 28, the polishing action is slow,
Polishing
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