Beruflich Dokumente
Kultur Dokumente
Power MOSFET
25 V, 78 A, Single NChannel, DPAK
Features
Low RDS(on)
Optimized Gate Charge
PbFree Packages are Available
http://onsemi.com
V(BR)DSS
Applications
Desktop VCORE
DCDC Converters
Low Side Switch
RDS(on) TYP
ID MAX
4.6 @ 10 V
25 V
78 A
6.5 @ 4.5 V
D
TC = 25C
Power Dissipation
(Note 1)
TC = 25C
Unit
25
VGS
"20
ID
14.8
TC = 85C
NChannel
G
S
11.5
PD
2.3
4
ID
TC = 85C
11.4
1 2
8.8
TC = 25C
PD
1.4
Continuous Drain
Current (RqJC)
TC = 25C
ID
78
Power Dissipation
(RqJC)
TC = 25C
TC = 85C
tp = 10 ms
TA = 25C
56
PD
64
IDM
210
IDmaxPkg
45
dV/dt
8.0
V/ns
TJ, Tstg
55 to 175
IS
78
EAS
722.5
mJ
TL
260
JunctiontoCase (Drain)
RqJC
1.95
C/W
RqJA
65
RqJA
110
THERMAL RESISTANCE
1
2
3
CASE 369AA
CASE 369D
DPAK
DPAK
(Bend Lead) (Straight Lead)
STYLE 2
STYLE 2
2 3
CASE 369AD
IPAK
(Straight Lead)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
YWW
78
N03G
TC = 25C
Steady
State
YWW
78
N03G
Power Dissipation
(Note 2)
Value
VDSS
YWW
78
N03G
Continuous Drain
Current (Note 2)
Symbol
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
Y
WW
78N03
G
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
NTD78N03
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
25
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
IDSS
V
24
VGS = 0 V,
VDS = 20 V
mV/C
TJ = 25C
1.5
TJ = 125C
10
IGSS
VGS(TH)
mA
"100
nA
3.0
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
DraintoSource On Resistance
Forward Transconductance
VGS(TH)/TJ
1.0
1.6
5.0
RDS(on)
mV/C
VGS = 10 V, ID = 78 A
4.6
6.0
VGS = 4.5 V, ID = 36 A
6.5
7.8
VDS = 10 V, ID = 15 A
22
gFS
mW
Ciss
1920
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
Output Capacitance
Coss
Crss
420
QG(TOT)
25.5
QG(TH)
GatetoSource Charge
QGS
GatetoDrain Charge
QGD
2250
960
pF
35
2.4
nC
5.3
18.2
td(on)
11
tr
68
td(off)
tf
ns
23
42
VSD
tRR
Charge Time
ta
Discharge Time
tb
VGS = 0 V,
IS = 20 A
TJ = 25C
0.83
TJ = 125C
0.7
1.0
39
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 20 A
17.8
ns
21
QRR
33
Source Inductance
LS
2.49
Drain Inductance
LD
nC
0.02
Ta = 25C
Gate Inductance
LG
3.46
Gate Resistance
RG
1.0
http://onsemi.com
2
nH
NTD78N03
100
VGS = 4 V
80
3.8 V
4.5 V
5V
3.6 V
9V
3.4 V
70
60
50
3.2 V
40
30
3V
20
TJ = 25C
10
2.6 V
0
0
10
0.01
VGS = 10 V
0.008
TJ = 125C
0.007
0.006
TJ = 25C
0.005
0.004
0.003
TJ = 55C
0.002
20
30
40
50
60
70
80
TJ = 25C
0.01
VGS = 4.5 V
VGS = 10 V
0.005
0
55
60
65
70
75
80
3
2.5
0.015
100000
VGS = 0 V
ID = 78 A
VDS = 4.5 V
10000
0.001
0.009
0
10
160
150 VDS 10 V
140
130
120
110
100
90
80
70
60
50
TJ = 125C
40
30
TJ = 25C
20
TJ = 55C
10
0
1
2
0
3
4
90
2
1.5
1
TJ = 150C
TJ = 125C
1000
100
0.5
0
50
25
25
50
75
100
125
150
175
10
10
15
20
http://onsemi.com
3
25
VDS = 0 V
VGS = 0 V
TJ = 25C
C, CAPACITANCE (pF)
5000
Ciss
4000
Crss
3000
2000
Ciss
1000
Coss
0
10
Crss
5
VGS
VDS
10
15
20
25
20
QT
VDS
15
VGS
10
Q2
Q1
2
ID = 20 A
TJ = 25C
0
6000
NTD78N03
10
15
20
25
30
0
35
80
1000
t, TIME (ns)
100
VDS = 20 V
ID = 20 A
VGS = 4.5 V
tr
tf
td(off)
td(on)
10
10
RG, GATE RESISTANCE (OHMS)
100
10 ms
100
100 ms
1 ms
VGS = 20 V
SINGLE PULSE
TC = 25C
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
0.1
50
40
30
20
10
0.6
0.7
0.8
0.9
1.0
1.1
VSD, SOURCETODRAIN VOLTAGE (V)
1.2
1000
10
60
0
0.5
1
1
VGS = 0 V
70 T = 25C
J
1
10
VDS, DRAINTOSOURCE VOLTAGE (VOLTS)
100
800
ID = 78 A
700
600
500
400
300
200
100
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE (C)
175
http://onsemi.com
4
NTD78N03
di/dt
IS
trr
ta
tb
TIME
0.25 IS
tp
IS
1000
DUTY CYCLE
100
D = 0.5
0.2
0.1
0.05
0.02
0.01
10
P(pk)
t1
0.1
t2
DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
1E05
1E04
1E03
1E02
1E01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
ORDERING INFORMATION
Package
Shipping
DPAK
75 Units/Rail
NTD78N03G
DPAK
(PbFree)
75 Units/Rail
NTD78N03T4
DPAK
Order Number
NTD78N03
NTD78N03T4G
DPAK
(PbFree)
NTD78N031
NTD78N031G
NTD78N0335
NTD78N0335G
75 Units/Rail
75 Units/Rail
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
NTD78N03
PACKAGE DIMENSIONS
T
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
R
4
A
S
DIM
A
B
C
D
E
F
H
J
L
R
S
U
V
Z
Z
H
J
L
D 2 PL
0.13 (0.005)
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.025 0.035
0.018 0.024
0.030 0.045
0.386 0.410
0.018 0.023
0.090 BSC
0.180 0.215
0.024 0.040
0.020
0.035 0.050
0.155
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.101
5.80
0.228
3.0
0.118
1.6
0.063
6.172
0.243
SCALE 3:1
mm
inches
http://onsemi.com
6
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.63
0.89
0.46
0.61
0.77
1.14
9.80 10.40
0.46
0.58
2.29 BSC
4.57
5.45
0.60
1.01
0.51
0.89
1.27
3.93
NTD78N03
PACKAGE DIMENSIONS
DPAK
CASE 369D01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
R
4
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
Z
A
T
SEATING
PLANE
H
D
G
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
3 PL
0.13 (0.005)
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
E3
L2
E2
A1
D2
D
L1
T
SEATING
PLANE
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
A1
b1
2X
A2
3X
b
0.13
E2
T
D2
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
6.35
6.73
4.70
4.45
5.46
2.28 BSC
3.40
3.60
2.10
0.89
1.27
OPTIONAL
CONSTRUCTION
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
http://onsemi.com
7
NTD78N03/D