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Crystal Technology

2
02

Company Profile
Qioptiq designs and manufactures photonic products

precision manufacturing and responsive global

and solutions, serving a wide range of markets and

sourcing. Due to a series of acquisitions, Qioptiq

applications in the medical and life sciences, industrial

has an impressive history and pedigree, beneting

manufacturing, defense and aerospace, and research

from the knowledge and experience of LINOS,

and development sectors.

Point Source, Rodenstock Precision Optics, Spindler


& Hoyer, Gsnger, Optem, Pilkington, Avimo and

The company is known for its high-quality standard

others. With a total workforce exceeding 2,300,

components, products and instruments, custom

Qioptiq has a worldwide presence with locations

modules and assemblies, leading-edge innovation,

throughout Europe, Asia and the USA.

1877

Rodenstock
founded

1898

Spindler & Hoyer


founded

1966

1969

1984

1991

Pilkington PE
Ltd. founded,
which later
becomes
THALES Optics

Gsnger
Optoelektronik
founded

Optem
International
founded

Point Source
founded

Medical &
Life Sciences

Index

Industrial
Manufacturing

Defense &
Aerospace

Company Prole

02 03

Core Competencies

04 05

LINOS Faraday Isolators Introduction

06 09

Single Stage Faraday Isolators

10 17

Isolators with a Broad Tuning Rage

18 20

Two Stage Faraday Isolators

21 24

Questionnaire Faraday Isolators

25

LINOS Pockels Cells and


Laser Modulators Introduction

26

LINOS Pockels Cells Technical Information 27 31

Research &
Development

LINOS Pockels Cells

32 43

Questionnaire Pockels Cells

44

LINOS Laser Modulators


Technical Information

45 46

Ampliers

47 48

LINOS Laser Modulators

48 53

Questionnaire Laser Modulators

1996

LINOS founded
through the merger
of Spindler & Hoyer,
Steeg & Reuter
Przisionsoptik,
Franke Optik and
Gsnger Optoelektronik

2000

Rodenstock
Przisionsoptik
acquired
by LINOS

2001

2005

AVIMO Group
acquired
by THALES

Qioptiq
founded as
THALES sells
High Tech
Optics Group

54

2006 / 2007

2010

Qioptiq acquires
LINOS and Point Source
as members of the
Qioptiq group

The new Qioptiq


consolidates all
group members
under one brand

03

4
04

Core Competencies
Qioptiq offers the most comprehensive set of
technologies and knowledge to fulll the demands
of almost any modern application in the eld of
photonics.
Our decades of interdisciplinary experience in many
markets enable us to provide a portfolio of design,
technologies and manufacturing capabilities suitable
for your specic application. We can supply a
solution that will boost your competitive edge and
support your efforts to optimize your products. Our
components, modules and systems have superior
specications such as optimum optical resolution,
highest transmission, superior beam quality and
much more.

Design and development


Optical system design including
non-linear optics
Mechanical design
Characterization of crystals
FEM-analysis including magnetic
and thermal effects
Standard and Sol-Gel coating
technologies
Numerous product patents
Lasers for biotechnology and
metrology

05
5

Materials

Assembly technologies

Non-linear crystals: KD*P, BBO, RTP,

Development of in-house processes

ADP, LiNbO3, TGG and others


Various optical materials for UV to IR
applications
Metals, magnets and various polymer
materials

for assembly of electro- and


magneto-optical systems
Glueing technologies
Flow-box assembly

LINOS Faraday Isolators

The LINOS Faraday Isolators


We have LINOS Faraday isolators for all wavelengths
in the range from 390 nm to 1310 nm, as well as

for 1550 nm. Isolators for other wavelengths can

Special features:

be implemented upon request. Many isolators can

We also have LINOS Microbench-compatible versions

be adjusted over a wide spectral range; variable

of our isolators for the most commonly used

frequency models can even be set for an interval

wavelengths.

of several hundred nanometers. At the same time,

We are always happy to implement custom designs

LINOS Faraday isolators are distinguished by high

and systems, even for one-time orders.

performance combined with the greatest possible


06

transmission. With more than 60 dB, our two-stage

Ideal areas of application:

isolators offer the best isolation available on the

Protecting

market.

decoupling oscillators and amplication systems;

The consistently high Qioptiq quality is assured by

injection locking, panels, and more.

lasers

from

damage

or

instability;

a combination of our many years of experience,


an intelligent design, modern engineering with
computer

simulations,

sophisticated

processing

and our ISO 9001 / ISO 13485 certied quality


management system. The result is the incomparable
value that distinguishes all our products value you
can count on!

Qioptiq quality criteria:


Isolation > 30 dB (one-stage) or > 60 dB
(two-stage)
Transmission > 90% (one-stage) or > 80%
(two-stage)
All models can be used in wide
wavelength ranges

More information:
Contact us to receive the complete Qioptiq standard
offer in our LINOS catalog by mail, or look for it
under:
www.qioptiq-shop.com

LINOS Faraday Isolators

Overview
Single
SingleStage
Stage

Aperture

FI-600/1100-8SI
FI-420/460-5SV

FI-390/420-5SV

FI-1060-8SI

FI-600/1100-5SI
FI-500/820-5SV
FI-500/780-5SV

5 mm

FI-x-5SV

FI-405-5SV FI-488-5SV

FI-x-5SI

07

Broadband

FI-x-5SV BB

Microbench

FI-x-5SV MB

Low Power

3.5 mm

Compact

FI-488-5SC

Compact

FI-488-3SC

2 mm
Wavelength 400

Aperture

FI-x-5LP
FI-x-5SC

FI-x-3SC
FI-x-2SI

FI-x-2SV

500

600

700

800

900

1000

Two Stage

5 mm

Wavelength

Aperture
4 mm
Wavelength

LPE-Technology

1100

1200

al

yst

LINOS Faraday Isolators

TG

Cr

m
mu

Tra

xi

Ma
S

Characteristics

tor

ota

ize

lar

Po

R
ay

ad

Far
um

tio

inc

Ext

xim

Principle of Operation

Ma

Faraday isolators are optical components which


allow light travel in only one direction. Their mode of
operation is based on the non-linear Faraday effect

direction of the magnetic eld (45) and the

(magneto rotation). In principle, the function of an

exit polarizer is also oriented at 45, so that the

optical isolator is analogue to that of an electrical

maximum beam intensity is transmitted.

diode.
If light of any polarization, but with a reversed direction

08

ion

iss

nsm

Faraday isolators are composed of three elements:

of propagation, meets the exit polarizer, it leaves

Entrance Polarizer

at 45, passes through the Faraday rotator and is

Faraday Rotator

again rotated by 45. The non-reciprocal nature of

Exit Polarizer

the Faraday effect results in the direction of rotation


once again being counter clockwise as viewed in the

Thin lm polarizers are commonly used as entrance

north/south direction of the magnetic eld. Upon

and exit polarizers, typically in form of a special

leaving the Faraday rotator, the polarization has

polarizing beam splitter cube. These polarizers have

gone through two 45 rotations resulting in a total

an extremely high extinction ratio and are designed

rotation of 90. In this polarization direction the

for use with high power lasers. The polarizer entrance

light is deected laterally by the entrance polarizer.

and exit surfaces are coated with an antireective


coating for the specied wavelength range. The key

Increased Isolation

element of the Faraday isolator is the Faraday rotator.

The maximum isolation of the Faraday isolator is

The rotator consists of a strong permanent magnet

limited by inhomogenities of the TGG crystal and

containing a crystal with a high Verdet constant.

the magnetic eld. However, it is possible to square


the extinction ratio by placing two isolators in series

Light of any polarization entering the entrance

and by arranging the polarity of the two magnets to

polarizer exits as horizontally or vertically linearly

be opposite to each other. This way the polarization

polarized light. Since laser light is usually linearly

direction of the transmitted light remains unchanged

polarized, one can match the orientation of the

in the transmission direction and the effect of both

entrance polarizer and the laser by simply rotating

magnetic elds is enhanced. This arrangement also

the isolator. Light then passes through the Faraday

leads to a more compact isolator. The strength of

rotator. For most wavelengths the crystal is a Terbium

this effect depends on the distance between the

Gallium Garnet (TGG) crystal which is placed in a

two magnets and can be used to tune the isolator to

strong homogeneous magnetic eld. Crystal length

different wavelengths. The adjustment is necessary

and magnetic eld strength are adjusted so that

because the rotational angle of the TGG crystal is

the light polarization is rotated by 45 on exiting

wavelength and temperature dependent. Please see

the crystal. In the gure above the light is rotated

chapter Two stage isolators (page 21) for more

counter clockwise when viewed in the north/south

information.

LINOS Faraday Isolators

Advantages
High Isolation

Three sides of the entrance and exit polarizers are

The properties of the LINOS Faraday isolator are

usable and readily accessible for easy cleaning. The

determined by the quality of the optical elements and

degree of isolation can be adjusted in a wide range.

the uniformity of the magnetic eld. The entrance and


exit polarizers exhibit a very high extinction ratio, so

Mounting Flexibility

that the isolation is mainly limited by inhomogenities

The LINOS Faraday isolators can be mounted directly

in the crystal material. Specially selected crystal

via threaded holes in the housing or via additional

materials with a high Verdet constant combined with

base plates or angle brackets.

permanent magnets with a high remanence enable


us to use shorter crystals and obtain an isolation

Applications

> 30 dB.

The ongoing development and renement of


laser technology have created a need for optical

The radiation blocked by the entrance and exit

components that shield the laser resonator from

polarizers is not absorbed internally, but is deected

back reections. LINOS Faraday isolators provide

by 90 with respect to the beam direction. This

an efcient method of suppressing instabilities and

ensures a stable thermal operation even at higher

intensity uctuations in laser devices.

laser power levels. The blocked radiation can be used


for other applications. All optical surfaces are slightly

Typical applications are:

tilted relative to the beam axis.

Protection of the resonator in solid state and gas


lasers from back reections

Low Insertion Loss


The high transmission, typically > 90%, is achieved
by using absorption free materials and antireective
coatings with low residual reectivity on all entrance

Prevention of parasitic oscillation in multistage solid


state ampliers
Protection of diode lasers against back scatter and
extraneous light

and exit surfaces.

Large Aperture, Compact Design

compact design

All optical elements have been aligned to eliminate

low insertion
loss

beam shading and allow for easy adjustment.


Focusing is not necessary.
The compact design is achieved by using rare earth
magnets with the highest remanent magnetism and

large aperture

TGG crystal material with a high Verdet constant. The


isolator is suitable for divergent beams or in setups
with limited space. A minimal optical path length in
the isolator results in the lowest possible inuence
on the image.

high isolation

09

LINOS Faraday Isolators

Single Stage Faraday Isolators


Technical Overview

Broadband option

The compact LINOS Faraday isolators in this chapter

On Broadband (BB) models the isolation is improved

use a single stage rotator. The length is kept to a

over a broadband spectrum by compensating

minimum with the use of powerful permanent

rotational dispersion of the TGG. This renders the

magnets in an optimized geometry. A 360 rotation

device usable over a wavelength range of 50 nm

of the exit polarizer provides a maximum extinction

without additional adjustment. The isolators can be

over a certain range around the central wavelength.

mounted on rods, cylindrical mounts or by using the

The entrance and exit polarizers are polarizing beam

assembly surfaces so that the laser polarization can

splitter cubes. The blocked radiation is diverted by

be oriented horizontally or vertically.

90 and is readily available for other applications. At


30 dB, the specication of the isolator is sufcient

Applications

for most standard applications. For specialized

The following single stage LINOS Faraday isolators

applications, selected isolators with an extinction up

are suitable for all lasers operating in the range

to 45 dB are available.

especially:

An even higher extinction is provided by the two


stage isolator series.

Ar+ and Kr+ lasers


other Ion lasers

Wavelength tuning

HeNe lasers

The Verdet constant of the TGG crystal is dependent

other gas lasers

upon wavelength and temperature. In order to

Dye lasers

compensate for different temperatures or different

Diode lasers

wavelengths, it is possible to tune the isolator in

Ti:Sapphire lasers

order to achieve maximum extinction. Tuning the

Cr:LiCAF lasers

isolator is accomplished by rotating the holder of the

Short pulse lasers

exit polarizer with respect to an engraved angular

Mode-synchronized lasers

scale.

Alexandrite lasers

The graph shows the typical reduction factor of the


transmission () that is due to the tuning of the
isolator to a wavelength that is different from the
design wavelength 0. The bar has a length that covers
the wavelength range for which 0.95 < T() < 1.
The bullet indicates the design wavelength 0. The
overall transmission of a Faraday isolator is equal to
Tt = T0 x T(), where T0 is a factor that represents
the transmission of the polarizers. At the design
wavelength the overall transmission of the Faraday
isolator is T0 > 90%

Reduction of transmission T() [%]

10

Tuning of design wavelength

LINOS Faraday Isolators

Isolators with 2mm Aperture,


SV / SI-Series
FI-x-2SV / FI-x-2SI
Isolation better than 30 dB / typically
38 - 42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Output polarizer, 360 rotation, engraved
tuning scale
Access to blocked beam
FI-x-2SV (x = 530, 630, 680 nm)

Mounting 2SV-version: via two M3


threaded holes at the bottom side,
20 mm separation

11

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-x-2SI (x = 760, 820, 990, 1060 nm)

FI-x-2SV / FI-x-2SI
Product

Isolation,
guaranteed /
typical
(dB)

Transmission
at design
wavelength
(%)

Transmission
at boundry
wavelength
(%)

Tuning
range
typical
(nm)

Aperture

Dimensions
Isolator

(mm)

(mm)

Order-No

FI-530-2SV

> 30/38-42

> 90

> 85

505 - 565

25x25x37

84 50 1010 007

FI-630-2SV

> 30/38-42

> 90

> 85

595 - 670

25x25x37

84 50 1011 000

FI-680-2SV

> 30/38-42

> 90

> 85

645 - 725

25x25x37

84 50 1010 009

FI-760-2SI

> 30/38-42

> 90

> 85

720 - 810

40x91

84 50 1034 007

FI-820-2SI

> 30/38-42

> 90

> 85

775 - 875

40x91

84 50 1034 008

FI-990-2SI

> 30/38-42

> 90

> 85

940 - 1050

40x91

84 50 1034 009

FI-1060-2SI

> 30/38-42

> 90

> 85

1010 - 1120

40x91

84 50 1034 010
Subject to technical changes

LINOS Faraday Isolators

Isolators with 3.5 and 5mm


Aperture, SC-Series
FI-x-3SC / FI-x-5SC
Extreme compact design
Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Output polarizer, 360 rotation, engraved
tuning scale
Access to blocked beam

FI-x-3SC (x = 488, 980, 1064, 1120 nm)

Optional version with Brewster plate


polarizers (BP) on request for FI-1060-xSC,
isolation better than 30 dB
Mounting:
via four M2 threaded holes at the bottom
side and at backside; 15 x 22.5 mm
separation (3SC-version, except
FI-1210-3SC);
49.5 x 22.5 mm separation
(FI-1210-3SC);
13 x 22.5 mm separation (5SC-version)

12

FI-x-5SC (x = 488, 930, 1064, 1120 nm)

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)
FI-1210-3SC, -5SC

FI-x-3SC / FI-x-5SC

Product

Isolation,
guaranteed/
typical
(dB)

Transmission
at design
wavelength
(%)

Transmission
at boundry
wavelength
(%)

Tuning
range
typical
(nm)

Aperture

Dimensions

Order-No

(mm)

(mm)

FI-488-3SC*

> 35/38-42

> 90

478 - 498

3.5

40x40x60

FI-488-5SC*

> 35/38-42

> 90

478 - 498

45x45x58

84 51 1090 0013

FI-980-3SC

> 30/38-42

> 90

> 85

925 - 1040

3.5

40x40x60

84 50 1036 004

84 51 1090 0016

FI-930-5SC

> 30/38-42

> 90

> 85

880 - 990

45x45x58

84 50 1037 007

FI-1060-3SC

> 30/38-42

> 90

> 85

1010 - 1120

3.5

40x40x60

84 50 1036 001
84 50 1037 001

FI-1060-5SC

> 30/38-42

> 90

> 85

1010 - 1120

45x45x58

FI-1120-3SC

> 30/38-42

> 90

> 85

1080 - 1170

3.5

40x40x60

84 51 1010 0057

FI-1120-5SC

> 30/38-42

> 90

> 85

1080 - 1170

45x45x58

84 51 1010 0009

FI-1210-3SC

> 30/38-42

> 90

> 85

1160 - 1260

3.5

45x45x96

84 51 1010 0043

FI-1210-5SC

> 30/38-42

> 90

> 85

1160 - 1260

45x45x96

84 51 1010 0053

optical contacted polarizers

Subject to technical changes

LINOS Faraday Isolators

Isolators with 5mm Aperture,


LP-Series
FI-x-5LP
Faraday Isolator, low power
Isolation better than 38 dB
TGG crystal
Rare earth magnet
In- and output polarizer rotatable
Mounting:
via two M4 threaded holes at the bottom
side, 30 mm separation
Damage threshold > 25 W / cm2

FI-x-5LP (x = 630, 680, 780, 850 nm)

13

FI-x-5LP
Isolation,
guaranteed
(dB)

Transmission at
design wavelength
(%)

Tuning range
typical
(nm)

Aperture

FI-630-5LP

> 38

> 70

595 - 670

41x40x40

84 51 1010 0098

FI-680-5LP

> 35

> 75

645 - 725

41x40x40

84 51 1010 0100

(mm)

Dimension
Isolator
(mm)

Order-No

Product

FI-780-5LP

> 38

> 85

750 - 810

41x40x40

84 51 1010 0091

FI-850-5LP

> 38

> 85

810 - 905

41x40x40

84 51 1010 0099
Subject to technical changes

LINOS Faraday Isolators

Isolators with 5mm Aperture,


SV / SI-Series
FI-x-5SV / FI-x-5SI
Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Output polarizer, 360 rotation, engraved
tuning scale
Access to blocked beam
FI-x-5SV (x = 530, 630, 730, 780, 810, 850 nm)

14

Optional version with Brewster plate


polarizers (BP) on request for FI-1060-5SI,
isolation better than 30 dB
For upgrading to broadband-version refer
to chapter Special Isolators
Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
30 mm separation (5SV-version); 40 mm
separation (5SI-version); or via base plate
Base plate included

FI-x-5SI (x = 488, 910, 960, 1000, 1060 nm)

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

FI-x-5SV / FI-x-5SI
Item Title

Isolation
guaranteed /
typical
(dB)

Transmission
at design
wavelength
(%)

Transmission
at boundry
wavelength
(%)

Tuning
range
typical
(nm)

Aperture

Dimensions
Isolator

(mm)

(mm)

Dimensions
base plate
(LxWxH)
(mm)

Order-No

FI-405-5SV*

> 35

> 88

400 - 420

40x56x90

84 51 1010 0131

FI-488-5SI*

> 30/38-42

> 90

> 85

478 - 498

58x58x95

70x58x8

84 50 1030 000

FI-530-5SV

> 30/38-42

> 90

> 85

505 - 565

40x40x55

50x30x9.5

84 50 1013 002

FI-630-5SV

> 30/38-42

> 90

> 85

595 - 670

40x40x55

50x30x9.5

84 50 1013 004

FI-730-5SV

> 30/38-42

> 90

> 85

690 - 780

40x40x55

50x30x9.5

84 50 1013 034

FI-780-5SV

> 30/38-42

> 90

> 85

740 - 830

40x40x55

50x30x9.5

84 50 1013 008

FI-810-5SV

> 30/38-42

> 90

> 85

765 - 865

40x40x55

50x30x9.5

84 50 1013 033

FI-850-5SV

> 30/38-42

> 90

> 85

805 - 905

40x40x55

50x30x9.5

84 50 1013 027

FI-910-5SI

> 30/38-42

> 90

> 85

860 - 970

58x58x95

70x58x8

84 50 1031 002

FI-960-5SI

> 30/38-42

> 90

> 85

910 - 1020

58x58x95

70x58x8

84 50 1031 006

FI-1000-5SI

> 30/38-42

> 90

> 85

950 - 1060

58x58x95

70x58x8

84 50 1031 014

FI-1060-5SI

> 30/38-42

> 90

> 85

1010 - 1120

58x58x95

70x58x8

84 50 1031 000

optical contacted polarizers

Subject to technical changes

LINOS Faraday Isolators

Isolators with 8mm Aperture,


SI-Series
FI-1060-8SI
Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Output polarizer, 360 rotation, engraved
tuning scale
Access to blocked beam
FI-1060-8SI

Optional version with Brewster plate


polarizers (BP) on request, isolation better
than 30 dB
Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
55 mm separation, or via base plate
Base plate included

15

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

FI-1060-8SI
Order-No

(mm)

Dimensions
base plate
(LxWxH)
(mm)

76x76x95

85x76x8

84 50 1032 000

Item
Title

Isolation,
guaranteed /
typical
(dB)

Transmission
at design
wavelength
(%)

Transmission
at boundary
wavelength
(%)

Tuning
range
typical
(nm)

Aperture

Dimensions
Isolator

(mm)

FI-1060-8SI

> 30/38-42

> 90

> 80

1010-1120

Subject to technical changes

LINOS Faraday Isolators

Special Isolators with 5mm


Aperture, SV-Series
FI-x-5SV-MB / FI-x-5SV-BB

FI-x-5SV-MB (x = 530, 630, 730, 780, 810, 850 nm)

Isolation better than 30 dB, typically


38-42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Output polarizer, 360 rotation, engraved
tuning scale
Access to blocked beam
MB-version: compatible to the
Microbench system
BB-version: for multiline lasers or
spectrally broadband lasers such as
fs-laser systems
Mounting BB-version:
via two M4 threaded holes at the bottom
side and at the back side;
30 mm separation, or via base plate
Base plate included

16

FI-x-5SV-BB (x = 780, 820 nm)

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

FI-x-5SV-MB / FI-x-5SV-BB
Order-No

(mm)

Dimensions
base plate
(LxWxH)
(mm)

42x36x65

84 50 1014 002

42x36x65

84 50 1014 004

42x36x65

84 50 1014 034

740 - 830

42x36x65

84 50 1014 008

> 85

765 - 865

42x36x65

84 50 1014 033

> 90

> 85

805 - 905

42x36x65

84 50 1014 001

> 30/38-42

> 90

> 85

725 - 825

40x40x61

50x30x9.5

84 50 1024 008

> 30/38-42

> 90

> 85

760 - 860

40x40x61

50x30x9.5

Product

Isolation
guaranteed/
typical
(dB)

Transmission
at design
wavelength
(%)

Transmission
at boundary
wavelength
(%)

Tuning
range
typical
(nm)

Aperture

Dimensions
Isolator

(mm)

FI-530-5SV-MB

> 30/38-42

> 90

> 85

505 - 565

FI-630-5SV-MB

> 30/38-42

> 90

> 85

595 - 670

FI-730-5SV-MB

> 30/38-42

> 90

> 85

690 - 780

FI-780-5SV-MB

> 30/38-42

> 90

> 85

FI-810-5SV-MB

> 30/38-42

> 90

FI-850-5SV-MB

> 30/38-42

FI-780-5SV-BB
FI-820-5SV-BB

84 50 1024 009
Subject to technical changes

LINOS Faraday Isolators

4mm Aperture Isolators with


Magnetooptical Crystal Film
FI-x-4SL
Extremely small size
Isolation better than 35 dB
Faraday material: magneto-optical crystal
lm in saturation
Rare earth magnet
Output polarizer, 360 rotation
Access to blocked beam
FI-x-4SL (x = 1310, 1550 nm)

Max. cw power: 2 W
Damage threshold > 100 MW / cm2 for
pulses of 20 ns (1550 nm)

17

FI-x-4SL
Aperture

Dimensions
Isolator

Order-No

Item Title

Isolation,
guaranteed/
typical
(dB)

Transmission
at design
wavelength
(%)

Transmision
at boundary
wavelength
(%)

Tuning range
typical
(nm)

(mm)

(mm)

FI-1250-4SL

> 35

> 85

> 80

1200 - 1300

14x23.5

84 51 102 000 04

FI-1310-4SL

> 35

> 90

> 85

1260 - 1360

14x23.5

84 50 1071 000

FI-1550-4SL

> 35

> 90

> 85

1485 - 1615

14x23.5

84 50 1072 000
Subject to technical changes

LINOS Faraday Isolators

Isolators with a Broad


Tuning Range
Technical Overview
Introduction
The function of the tunable LINOS Faraday isolators
in the following chapter is based on a single stage
isolator. Precision mechanics allow a continuous
adjustment of the interaction between the magnetic
eld and the TGG crystal without moving any optical
components.
18
It is possible to set the rotation angle to any value
between 0 to 45 within the wavelength range
in order to study the effects of varying degrees
of feedback. Easy access to the blocked beam is
provided by polarizing beam splitter cubes, which
divert the blocked beam by 90.
Precision mechanics allow the exact reproduction
of adjustments previously established. And with the

Ar+ and Kr+ lasers

addition of an optional micrometer display, an angular

other Ion lasers

resolution in the arc minute range is achievable. The

HeNe lasers

incorporation of very powerful magnets ensures a

Other gas lasers

compact and efcient design.

Diode lasers
Nd:YAG lasers

Operation

Ti: Sapphire lasers

The isolator can be mounted on rods, cylindrical

Cr:LiCAF lasers

mounts or by using the assembly surfaces so that

Dye lasers

the laser polarization can be oriented horizontally or

Alexandrite lasers

vertically. The entry and exit polarizers can be easily

Mode-locked lasers

cleaned by removing the security rings.

Short Pulse lasers

Applications

Faraday Rotator

These isolators are suitable for all lasers operating

For every laser line selected from 390 nm to a

in the 390-420 nm respectively in the 500-1100 nm

maximum of 1100 nm, every polarization direction

wavelength range especially for:

from 0 to 90 is precise and reproducible.

LINOS Faraday Isolators

5mm Aperture Tunable Isolators,


SV / SI-Series
FI-x/y-5SV / FI-600/1100-5SI
Continuous adjustment for wavelength
without movement of optical parts
Tunable with maximum transmission and
isolation over the complete wavelength
range
Isolation better than 30 dB, typically
38 - 42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Access to blocked beam

FI-x/y-5SV

19

Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
20 mm separation (5SV-version);
55 mm separation (5SI-version);
or via base plate, or via angle bracket
(5SV-version only)
Base plate included
Angle bracket included (5SV-version only)
FI-600/1100-5SI

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

FI-x/y-5SV, FI-x/y-5SI
Order-No

(mm)

Dimensions
base plate
(LxWxH)
(mm)

60x60x77

54x60x8

84 50 1046 000

60x60x77

54x60x8

84 50 1046 001

60x60x77

54x60x8

84 50 1041 000

80x80x125

88x90x8

Product

Isolation,
guaranteed /
typical
(dB)

Transmission
at design
wavelength
(%)

Tuning range
typical

Aperture

Dimensions
Isolator

(nm)

(mm)

FI-390/420-5SV

> 30/38-42

> 90

390-420

FI-420/460-5SV

> 30/38-42

> 90

420-460

FI-500/820-5SV

> 30/38-42

> 90

500-820

FI-600/1100-5SI

> 30/38-42

> 90

600-1100

84 50 1044 000
Subject to technical changes

High quality
A precise mechanics enables a continuous wavelength adjustment.
Without movement of the optics a broad wavelength range is
realized.

LINOS Faraday Isolators

8mm Aperture Tunable Isolator,


SI-Series
FI-600/1100-8SI
Continuous adjustment for wavelength
without movement of optical parts
Tunable with maximum transmission and
isolation over the complete wavelength
Isolation better than 30 dB, typically
38-42 dB over the entire wavelength
range, custom isolation values on request
TGG crystal
Rare earth magnet
Access to blocked beam

FI-600/1100-8SI

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

20
Mounting:
via two M4 threaded holes at the bottom
side and at the back side;
55 mm separation, or via base plate
Base plate included

FI-600/1100-8SI
Item Title

FI-600/1100-8SI

Isolation,
guaranteed/
typical
(dB)

Transmission

Tuning range
typical

Aperture

Dimensions
Isolator

(%)

(nm)

(mm)

(mm)

Dimensions
base plate
(LxWxH)
(mm)

> 30/38-42

> 90

600 - 1100

80x80x125

88x90x8

Order-No

84 50 1045 000
Subject to technical changes

A closer look
The excellent quality of the high-precision LINOS electro-optics from
Qioptiq is a testament to decades of experience at both Gsnger and
Qioptiq. The 40-year history of these products is marked by immense
customer satisfaction, and has established Qioptiq as a leader in laser
technology.
Dr. Gsnger, founder of Gsnger Optics in Munich, was instrumental in the success of
the electro-optics.

Two Stage Faraday


Isolators
Technical Overview
FI-x-5TI and FI-x-5TV

Based on this special

Diode lasers are extremely sensitive to reected

60 dB isolation at the

radiation. Standard Faraday isolators typically achieve

ctively within the


design wavelength, respectively

between 30 dB and 40 dB isolation, which in some

adjustment range of 10 nm, makes Linos two stage

cases is not sufcient to suppress undesirable

Faraday isolators the best on the market.

design a guaranteed

feedback.

DLI, Overview
Our two stage LINOS Faraday isolators were

The isolators of the DLI-series were developed for

developed for the special requirements of diode

the special requirements of diode lasers in the visible

lasers and square the standard isolation of single stage

spectrum and combine the outstanding isolation of

Faraday isolators. At the heart of this development

a two stage isolator with the exibility of a tunable

is the use of two coupled isolator stages together

isolator.

with the best polarizers available on the market.


The DLI isolators are easily integrated into an existing
This conguration combines the exit polarizer of

setup and can be adjusted to match any wavelength

the rst stage with the entry polarizer of the second

without changing the laser polarization or displacing

stage to form one central polarizer.

the laser beam. The isolators can be coarsely tuned


by altering the effective magnetic eld in the two

Arranging the polarity of the two magnets to be

isolator stages. A precise wavelength adjustment

opposite to each other results in two benets:

is possible by rotating the central polarizer with

The polarization direction of the transmitted light

a micrometer set screw. The blocked radiation is

remains unchanged in the transmission direction

deected out of the isolator at 90 with respect to

and the effect of both magnetic elds is enhanced.

the beam axis. It is not absorbed by the interior of

Therefore this conguration also leads to a more

the isolator, but is available at the side surfaces of the

compact isolator and a reduction of the optical path

polarizer and the exit window.

length which in turn enhances the optical quality of


the LINOS Faraday isolator.

DLI Injection Locking


The DLI injection version revolves this operating mode

All optical surfaces are antireection coated and

and uses the exit window for in-coupling of the seed

the surfaces normal to the beam axis are tilted.

laser for injection locking while decoupling efciently

The polarizers are mounted in a way that allows

the master and the slave laser from each other at

easy cleaning of the external optical surfaces. This

the same time. Like this stable mode locking (e.g. of

guarantees that the isolation is not reduced by

Ti:Sapphire lasers) is simplied.

residual reections and scattering from the isolator.

21

LINOS Faraday Isolators

Applications
All two stage LINOS Faraday isolators are typically
used to improve the power and frequency stability of
diode lasers used in spectroscopy, interferometry and
precision control as well as in alignment applications.
Since the output polarization and the beam position
are conserved for all two stage LINOS Faraday
isolators, the inuence of the smallest feedback
effects on the laser can be quantitatively examined.
22

LINOS Faraday Isolators

5mm Aperture Two Stage Faraday


Isolators (non-tunable), TV / TI-Serie
FI-x-TV / FI-x-TI

Two coupled isolator stages in series


Especially high isolation > 60 dB
TGG crystal
Rare earth magnet

High quality
High isolation (60 dB) and high
transmission for wavelengths
from 650 nm to 1060 nm is
guaranteed.

TV-version: wavelength range 10 nm


depending on the central wavelength
TI-version: wavelength adjustable
Customized central wavelength on
request
Mounting TV-version:
via two M4 threaded holes at the bottom
side, 30 mm separation
Mounting TI-version:
via two M4 threaded holes at the bottom
side or at the back side,
40 mm separation, or via base plate
Base plate included

FI-x-TV

FI-x-TI

23

Damage threshold > 200 mJ / cm2 for


pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

FI-x-TV / FI-x-TI
Product

Isolation,
guaranteed

Transmission
at design
wavelength (%)

(dB)

Order-No

(mm)

Dimensions
base plate
(LxWxH)
(mm)

Tuning range
typical

Aperture

Dimensions
Isolator

(nm)

(mm)

FI-650-TV

60

80

40x40x106

84 51 1010 0044

FI-670-TV

60

80

40x40x106

84 50 1060 020

FI-710-TV

60

80

40x40x106

84 50 1060 019

FI-760-TV

60

80

40x40x106

84 50 1060 017

FI-780-TV

60

80

40x40x106

84 50 1060 002

FI-810-TV

60

80

40x40x106

84 50 1060 003

FI-850-TV

60

80

40x40x106

84 50 1060 009

FI-920-TI

60

80

885-960

58x58x131

70x58x8

84 50 1061 001

FI-950-TI

60

80

915-990

58x58x131

70x58x8

84 50 1061 002

FI-980-TI

60

80

940-1020

58x58x131

70x58x8

84 50 1061 003

FI-1060-TI

60

80

1000-1080

58x58x131

70x58x8

Other wavelengths available upon request

84 50 1061 004
Subject to technical changes

LINOS Faraday Isolators

5mm Aperture Two Stage Faraday


Isolators (tunable), DLI-Series
Tunable Diode Laser Isolators DLI
Tunable with maximum isolation over
the complete wavelength range
Two coupled isolator stages in series
Especially high Isolation > 60 dB
TGG crystal
Rare earth magnet
Input polarization = output
polarization
Individually calibrated adjustment
curve supplied with each isolator

24
Mounting:
via four M4 threaded holes at the bottom
side and at the back side;
40 x 40 mm separation, or via base plate
Base plate included
Special version for injection locking on
request
Damage threshold > 200 mJ / cm2 for
pulses of 10 ns (1064 nm)
Damage threshold > 28 mJ / cm2 for
pulses of 280 fs (850 nm, 20 Hz)

DLI-x
Order-No

Isolation,
guaranteed
(dB)

Transmission at design
wavelength
(%)

Tuning range
typical
(nm)

Aperture

DLI 1

60

80

754-890

50x50x97

50x60x10

84 50 1003 000

DLI 2

60

80

610-700

50x50x97

50x60x10

84 50 1002 000

DLI 3

60

80

650-760

50x50x97

50x60x10

(mm)

Dimensions
Isolator
(mm)

Dimensions base
plate (LxWxH)
(mm)

Product

84 50 1001 000
Subject to technical changes

A closer look
An easy integration of DLI isolators is possible. They can be adjusted
easily without changing laser polarization or beam position. Special
versions for injection locking on request.

LINOS Faraday Isolators

Faraday Isolators - Questionnaire


QIOPTIQ Photonics GmbH & Co. KG
Crystal Technology
Hans-Riedl-Strae 9
85622 Feldkirchen
Germany
Phone
Fax
E-mail
Internet

+49(0)89 255 458-100


+49(0)89 255 458-895
laser@qioptiq.de
www.qioptiq.com

Full Name: _____________________________________________


Company Name: ________________________________________
Address: _______________________________________________
Zip Code: ______________________________________________
Country: _______________________________________________

Phone: ________________________________________________
Fax: ___________________________________________________
City: __________________________________________________

1. Laser Parameters at Location of Faraday Isolator


1.1 Wavelength [nm] ____________________________________________________________________________________________________
1.2 Type of Laser _______________________________________________________________________________________________________
1.3 Beam Diameter, 1/e2 [mm] _____________________________________________________________________________________________
1.4 CW / Pulsed ________________________________________________________________________________________________________
1.5 Laser Pulse Energy [mJ] _______________________________________________________________________________________________
1.6 Laser Pulse Duration [ps] ______________________________________________________________________________________________
1.7 Repetition Rate [Hz] __________________________________________________________________________________________________

2. Type of Faraday Isolator


2.1 Hard Aperture [mm] __________________________________________________________________________________________________
2.2 Transmission [%] ____________________________________________________________________________________________________
2.3 Extinction1) [dB] _____________________________________________________________________________________________________
1)

Single stage: > 30dB, typically 38 - 42dB. Two stage: > 60dB, custom isolation values on request

3. Miscellaneous
3.1 Temperature @ operation ____________________________________________________________________________________________3
3.2 Year [No. of Units] Target Price / Unit ____________________________________________________________________________________

4. Comments / Remarks:
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________

25

LINOS Pockels Cells & Laser Modulators

The LINOS Pockels Cells


and Laser Modulators
Electro-optical

modulators

are

divided

into

modulators (for applications outside of laser cavity)

and Pockels cells (for applications within laser cavity)

Special features:

on the following pages.

On request we can customize products for

You can choose from a large selection of crystals for

wavelengths in the 250 nm to 3 m range.

a variety of applications, apertures and laser outputs,

26

covering the entire wavelength range from 250 nm

Ideal areas of application:

to 3 m. The consistently high Qioptiq quality and

Phase and intensity modulation; Q-switching; pulse

incomparable value of our products is assured by

picking.

a combination of our many years of experience,


an intelligent design, modern engineering with
computer simulations and sophisticated processing.
In addition we offer a broad range of fast and highperformance high-voltage drivers. For details, please
contact our staff from the customer service.

More information:

Qioptiq quality criteria:


Best possible extinction ratio for each crystal
High transmission
Patented isolation system minimizes
piezoelectric oscillation for exceptionally
precise switching operations (optional)

Contact us to receive the complete Qioptiq offer in


our LINOS catalog by mail, or look for it under:
www.qioptiq-shop.com

LINOS Pockels Cells & Laser Modulators


lators

Pockels Cells,
Technical Information
The Electro-Optic Effect

Q-Switching

The linear electro-optic effect, also known as the

Laser activity begins when the threshold condition

Pockels effect, describes the variation of the refractive

is met: the optical amplication for one round trip

index of an optical medium under the inuence of an

in the laser resonator is greater than the losses

external electrical eld. In this case certain crystals

(output coupling, diffraction, absorption, scattering).

become birefringent in the direction of the optical

The laser continues emitting until either the stored

axis which is isotropic without an applied voltage.

energy is exhausted, or the input from the pump


source stops. Only a fraction of the storage capacity

When linearly polarized light propagates along the

is effectively used in the operating mode. If it were

direction of the optical axis of the crystal, its state

possible to block the laser action long enough to

of polarization remains unchanged as long as no

store a maximum energy, then this energy could be

voltage is applied. When a voltage is applied, the

released in a very short time period.

light exits the crystal in a state of polarization which


is in general elliptical.

A method to accomplish this is called Q-switching.


The resonator quality, which represents a measure

This way phase plates can be realized in analogy

of the losses in the resonator, is kept low until the

to conventional polarization optics. Phase plates

maximum energy is stored. A rapid increase of the

introduce a phase shift between the ordinary and

resonator quality then takes the laser high above

the extraordinary beam. Unlike conventional optics,

threshold, and the stored energy can be released

the magnitude of the phase shift can be adjusted

in a very short time. The resonator quality can be

with an externally applied voltage and a /4 or /2

controlled as a function of time in a number of

retardation can be achieved at a given wavelength.

ways. In particular, deep modulation of the resonator

This presupposes that the plane of polarization of

quality is possible with components that inuence

the incident light bisects the right angle between

the state of polarization of the light. Rotating the

the axes which have been electrically induced. In the

polarization plane of linearly polarized light by 90,

longitudinal Pockels effect the direction of the light

the light can be guided out of the laser by a polarizer.

beam is parallel to the direction of the electric eld.


In the transverse Pockels cell they are perpendicular

The modulation depth, apart from the homogeneity

to each other. The most common application of the

of the 90 rotation, is only determined by the degree

Pockels cell is the switching of the quality factor of a

of extinction of the polarizer. The linear electro-

laser cavity.

optical (Pockels) effect plays a predominant role


besides the linear magneto-optical (Faraday) and the
quadratic electro-optical (Kerr) effect. Typical electrooptic Q-switches operate in a so called /4 mode.

27

LINOS Pockels Cells

a) Off Q-Switching

Light emitted by the laser rod (1) is linearly polarized


1

by the polarizer (2). If a /4 voltage is applied to the


Pockels cell (3), then on exit, the light is circularly

polarized. After reection from the resonator mirror

(4) and a further passage through the Pockels cell,

the light is once again polarized, but the plane of

polarization has been rotated by 90. The light is


deected out of the resonator at the polarizer, but the
resonator quality is low and the laser does not start
28

On Q-Switching

to oscillate. At the moment the maximum storage


capacity of the active medium has been reached,

Pulse Picking

the voltage of the Pockels cell is turned off very

Typically femto second lasers emit pulses with a

rapidly; the resonator quality increases immediately

repetition rate of several 10 MHz. However, many

and a very short laser pulse is emitted. The use of a

applications like regenerative amplifying require

polarizer can be omitted for active materials which

slower repetition rates. Here a Pockels cell can be

show polarization dependent amplication (e.g.

used as an optical switch: by applying ultra fast and

Nd:YAlO3, Alexandrite, Ruby, etc.).

precisely timed /2-voltage pulses on the Pockels cell,


the polarization of the laser light can be controlled

pulse wise. Thus, combined with a polarizer the


Pockels cell works as an optical gate.

Selection Criteria

The selection of the correct Q-switch for a given


3

application is determined by the excitation of the


4

laser, the required pulse parameters, the switching


voltage, the switching speed of the Pockels cell,

Off Q-Switching

the wavelength, polarization state and degree of


coherence of the light.

b) On Q-Switching
Unlike off Q-switching, a /4 plate (6) is used

Type of Excitation

between the Pockels cell (3) and the resonator mirror

Basically, both off and on Q-switching are equivalent

(4). If no voltage is applied to the Pockels cell the

in physical terms for both cw and for pulse pumped

laser resonator is blocked: no laser action takes place.

lasers. On Q-switching is, however, recommended

A voltage pulse opens the resonator and permits the

in cw operation because a high voltage pulse and

emission of laser light.

not a rapid high voltage switch-off is necessary to


generate a laser pulse. This method also extends the

LINOS Pockels Cells

life time of the cell. Over a long period of time, the

The CPC and SPC series cells are suitable for small,

continuous application of a high voltage would lead

compact lasers and especially for OEM applications.

to electrochemical degradation effects in the KD*P

They are available as dry cells and immersion cells.

crystal. We advice the use of an on Q-switching


driver.

The level of deuterium content in an electro-optic


crystal inuences the spectral position of the infrared

Off Q-switching is more advantageous for lasers

edge. The higher the deuterium level the further the

stimulated with ash lamps because the /4 plate is

absorption edge is shifted into the infrared spectral

not required. In order to prevent the electrochemical

region: for Nd:YAG at 1064 nm, the laser absorption

degradation of the KD*P crystal in the off Q-switching

decreases. Crystals, which are deuterated to > 98%,

mode we recommend a trigger scheme in which the

are available for lasers with a high repetition rate or a

high voltage is turned off between the ashlamp

high average output power.

pulses and turned on to close the laser cavity before


the onset of the pump pulse.

Pockels Cell Switching Voltage


Using double Pockels cells can half the switching

The CPC- and SPC-series cells are recommended for

voltage. This is achieved by switching two crystals

diode pumped solid state lasers. These cells are ultra

electrically in parallel and optically in series. The

compact and will operate in a short length resonator:

damage threshold is very high and the cells are

this is necessary to achieve very short laser pulses.

mainly used outside the resonator.

Pulse Parameters

Electro-optic material

The LM n, LM n IM, and LM n SG series cells are

The selection of the electro-optic material depends

recommended for lasers with a power density of

on its transmission range. Further on, the laser

up to 500 MW / cm. The LM n and LM n SG cells

parameters as well as the application have to be

are used for lasers with very high amplication. The

taken into account.

SG cells with Sol-Gel technology have the same


transmission as the immersion cells and both are

For wavelengths from 0.25 m to 1.1 m, longitudinal

typically used when a higher transmission is required.

Pockels cells made of KD*P and a deuterium content

At high pulse energies LMx cells are preferred.

of 95% should be considered. If the deuterium


content is higher the absorption edge of the material

Brewster Pockels cells are recommended for lasers

is shifted further into the infrared. KD*P crystal cells

with low amplication, such as Alexandrite lasers.

with a deuterium content > 98% can be used up to

The passive resonator losses are minimal due to a

1.3 m.

high transmission of 99%.


KD*P can be grown with high optical uniformity and
is therefore recommended for large apertures.

29

LINOS Pockels Cells

The spectral window of BBO also ranges from

cell will be determined by these factors. Thin lm

0.25 m to 1.3 m. In addition, BBO crystals provide a

polarizers are used and the substrate is mounted at

low dielectric constant and a high damage threshold.

the Brewster angle. A parallel beam displacement

Therefore, BBO is recommended for lasers with high

of 1 mm results from this conguration and can be

repetition rate and high average powers.

compensated by adjusting the resonator.

RTP, with an optical bandwidth from 0.5 m up to


1.5 m, combines low switching voltage and high
laser induced damage threshold. Together with
its relative insensitivity for Piezo effects RTP is best
30

suited for precise switching in high repetition rate


lasers with super fast voltage drivers.
For wavelengths from 1.5 m up to 3 m we
recommend LiNbO3.

Suppression of Piezo effects


Like any other insulating material electro optical
crystals show Piezo effects when high voltage is
applied. The extent of the Piezo ringing depends
on the electro optic material and usually its effect
on the extinction ratio is negligible when used for
Q-switching. However, for pulse picking applications,
which require highly precise switching behaviour,
Qioptiq offers specially Piezo damped Pockels cells
which suppress these ringing effects efciently.

State of Polarization
The MIQS- and CIQS-series cells are supplied with an
integrated polarizer: the alignment of the Pockels cell
relative to the polarizer thus becomes unnecessary.
The rotational position of the cell relative to the
resonator axis can be chosen at will. However, should
the polarization state of the light in the resonator be
determined by other components, such as anisotropic
amplication of the laser crystal or Brewster surfaces
of the laser rod, then the rotational position of the

LINOS Pockels Cells

Product Overview

31

LINOS Pockels Cells

KD*P Pockels Cells LM Series

KD*P-based Pockels cell


High crystal deuteration (typical) > 98%
Wave front deformation: < /4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)

Optionally available as dry, immersion


(IM) or Sol-Gel (SG) version
Optionally available with /4 disk:
LM n (IM) (SG) WP
Optionally available with dust protection
caps for hermetically sealed installation:
LM n (IM) (SG) DT

LM 8 (IM) (SG)

Other specications upon request


Please state the applied wavelength
when ordering

32

LM 10 (IM) (SG)

LM 12 (IM) (SG)

LM 16 (IM) (SG)

KD*P Pockels Cells LM Series


Product

Clear Aperture
(mm)

Transmission typical
(%)

Extinction ratio
(voltage-free)

/4 voltage

Capacity
(pF)

Order-No

LM 8

91

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3001 005

LM 8 IM

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3011 002

LM 8 SG

7.5

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3006 001

LM 10

10

91

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3002 001

LM 10 IM

10

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3012 001

LM 10 SG

9.5

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3007 005

LM 12

12

91

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3003 001

LM 12 IM

12

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3013 003

LM 12 SG

11

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3008 001

LM 16

16

91

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3004 000

LM 16 IM

16

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3014 000

LM 16 SG

15

98

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3009 000

All order numbers valid for 1064 nm.

Subject to technical changes

LINOS Pockels Cells

KD*P Pockels Cells MIQS 8 Series


KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
With integrated, pre-adjusted Brewster
polarizer
Compact design for OEM applications
Wave front deformation: < /4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)

MIQS 8 (IM) (SG)

Optionally available as dry, immersion


(IM) or Sol-Gel (SG) version
Optionally available with /4 disk:
MIQS 8 (IM) (SG) WP
Other specications upon request
Please state the applied wavelength
when ordering

33

KD*P Pockels Cells MIQS 8 Series


Product

Clear aperture
(mm)

Transmission
typical (%)

Extinction ratio
(voltage-free)

/4 voltage

Capacity
(pF)

Order-No

MIQS 8

88

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3070 001

MIQS 8 IM

95

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3071 017

MIQS 8 SG

7.5

95

> 500:1

3.2 kV at 1064 nm, 20C

All order numbers valid for 1064 nm.

84 50 3071 024
Subject to technical changes

LINOS Pockels Cells

KD*P-Pockels Cells CPC Series

KD*P-based Pockels cell


High crystal deuteration (typical) > 98%
Compact design for OEM applications
Wave front deformation: < /4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)

Optionally available as dry, immersion (IM)


or Sol-Gel (SG) version
Optionally available with /4 disk:
CPC n (IM) (SG) WP

CPC 8 (IM) (SG)

Other specications upon request


Please state the applied wavelength
when ordering

34

CPC 10 (IM) (SG)

CPC 12 (IM) (SG)

KD*P Pockels Cells CPC Series


Product

Clear Aperture
(mm)

Transmission
typical (%)

Extinction ratio1)
(voltage-free)

/4 voltage

Capacity
(pF)

Order-No

CPC 8

91

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3091 001

CPC 8 IM

98

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3092 001

CPC 8 SG

7.5

98

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3093 000

CPC 10

10

91

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3094 000

CPC 10 IM

10

98

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3094 001

CPC 10 SG

9.5

98

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3096 000

CPC 12

12

91

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3097 000

CPC 12 IM

12

98

> 3000:1

3.2 kV at 1064 nm, 20C

84 50 3098 000

CPC 12 SG

11

98

> 3000:1

3.2 kV at 1064 nm, 20C

> 1000 : 1 /2-voltage applied


All order numbers valid for 1064 nm.

1)

84 50 3099 000
Subject to technical changes

LINOS Pockels Cells

KD*P Pockels Cells CIQS Series


KD*P-based Pockels cell
High crystal deuteration (typical) > 98%
With integrated, pre-adjusted Brewster
polarizer
Compact design for OEM applications
Wave front deformation: < /4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
CIQS 8 (IM) (SG)

Optionally available as dry, immersion


(IM) or Sol-Gel (SG) version
Optionally available with /4 disk:
CIQS n (IM) (SG) WP
Other specications upon request
Please state the applied wavelength
when ordering

CIQS 10 (IM) (SG)

CIQS 12 (IM) (SG)

KD*P Pockels Cells CIQS Series


Product

Clear Aperture
(mm)

Transmission
typical (%)

Extinction ratio
(voltage-free)

/4 voltage

Capacity
(pF)

Order-No

CIQS 8

88

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3070 000

CIQS 8 IM

95

> 500:1

3.2 kV at 1064 nm, 20C

84 51 3010 0004

CIQS 8 SG

7.5

95

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3071 022

CIQS 10

10

88

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3073 000

CIQS 10 IM

10

95

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3074 001

CIQS 10 SG

9.5

95

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3075 001

CIQS 12

12

88

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3076 000

CIQS 12 IM

12

95

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3077 000

CIQS 12 SG

11

95

> 500:1

3.2 kV at 1064 nm, 20C

All order numbers valid for 1064 nm.

84 50 3078 002
Subject to technical changes

35

LINOS Pockels Cells

KD*P Pockels Cells SPC 4 Series

KD*P-based Pockels cell


High crystal deuteration (typical) > 98%
Very compact design for OEM applications
Wave front deformation: < /4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)

Optionally available as dry, immersion


(IM) or Sol-Gel (SG) version
Optionally available with integrated,
pre-adjusted Brewster polarizer
Optionally available with /4 disk:
SPC4 (IM) (SG) WP

SPC 4 (IM) (SG)

Other specications upon request


Please state applied wavelength when
ordering

36

KD*P Pockels Cells SPC 4 Series


Transmission
typical (%)

Capacity (pF)

Order-No

3.2 kV at 1064 nm, 20C

84 50 3036 007

3.2 kV at 1064 nm, 20C

84 50 3036 004

Clear aperture
(mm)

SPC 4

91

> 3000:1

SPC 4 IM

98

> 3000:1

SPC 4 SG

3.5

98

> 3000:1

3.2 kV at 1064 nm, 20C

All order numbers valid for 1064 nm, maximum voltage 4 kV.

A closer look
The compact size of approx.
13 x 15 x 16 mm enables size
critical OEM-applications.

Extinction ratio
(voltage-free)

/4 voltage

Product

84 50 3052 001
Subject to technical changes

LINOS Pockels Cells

KD*P Double Pockels Cells DPZ


Series

KD*P-based Pockels cell


High crystal deuteration (typical) > 98%
Two crystals in series
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)

Optionally available as dry, immersion


(IM) or Sol-Gel (SG) version
/4 voltage: 1.6 kV at 1064 nm, 20C

DPZ 8

Other specications on request


Please state the applied wavelength
when ordering

37

DPZ 8 (IM)

DPZ 8 (SG)

KD*P Double Pockels Cells DPZ Series


Product

Clear aperture
(mm)

Transmission
typical (%)

Extinction ratio
(voltage-free)

/2- voltage

Capacity
(pF)

Order-No

DPZ 8

84

> 500:1

3.2 kV at 1064 nm, 20C

84 50 3041 001

DPZ 8 IM

95

> 1000:1

3.2 kV at 1064 nm, 20C

84 50 3042 000

DPZ 8 SG

7.5

95

> 1000:1

3.2 kV at 1064 nm, 20C

All order numbers valid for 1064 nm.

84 50 3043 005
Subject to technical changes

LINOS Pockels Cells

KD*P Brewster Pockels Cell BPC 8

KD*P-based Pockels cell


High crystal deuteration (typical) > 98%
Crystal with Brewster angle cut
No coatings
High transmission for lasers with low
amplication

Beam offset: 8.4 mm


Wave front deformation: < /4
Damage threshold: > 500 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
Other specications on request
Please state the applied wavelength
when ordering

38

KD*P Brewster Pockels Cell BPC 8


Product

Clear aperture
(mm)

Transmission
typical (%)

Extinction ratio
(voltage-free)

/4 voltage

Capacity (pF)

Order-No

BPC 8

7.4

99

> 1000:1

2.5 kV at 755 nm, 20C

84 50 3034 001
Subject to technical changes

LINOS Pockels Cells

LiNbO3 Pockels Cells


LiNbO3-based Pockels cell
Preferably for Er:YAG-, Ho:YAG-,
Tm:YAG-laser
For wavelengths up to 3 m
Brewster cells BPZ 5 IR for laser with low
amplication
Compact design
Wave front deformation: < /4
Damage threshold: > 100 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)

LM 7 IR

Other specications on request


Please state the applied wavelength
when ordering

39
LM 9 IR

BPZ 5 IR

LiNbO3 Pockels Cells

1)

Product

Clear aperture (mm)

Transmission typical (%)

Extinction ratio (voltage-free)

/4-voltage (kV)

Order-No

LM 7 IR1)

7.45 x 7.45

> 98

>100:1

3kV1)

84 50 3030 001

LM 9 IR2)

9x9

> 98

>100:1

4.5kV2)

84 50 3032 001

BPZ 5 IR

5x5

> 99

>100:1

1.9kV1)

2 m wavelength
2)
3 m wavelength

84 51 3040 0003
Subject to technical changes

LINOS Pockels Cells

BBO Pockels Cells BBPC Series


BBO-based Pockels cell
Suited for Q-switch applications with
high repetition rates
Wave front deformation: < /4
Damage threshold: > 300 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
Optionally available with integrated
Brewster polarizer: BBPC n BP
Optionally available with integrated
/ 4 disk: BBPC n WP
Optionally available with Piezo
attenuator: BBPC n pp

BBPC

Other specications on request


Please state the applied wavelength
when ordering

40

BBO Pockels Cells BBPC Series

1)

Product

Clear aperture
(mm)

Transmission typical
(%)

Extinction ratio
(voltage-free)

/4-voltage1)

Capacity
(pF)

Order-No

BBPC 3

2.6

98

>1000:1

3.6kV

84 50 3083 012

BBPC 4

3.6

98

>1000:1

4.8kV

84 50 3083 008

BBPC 5

4.6

98

>1000:1

6.0kV

DC at 1064 nm
All order numbers valid for 1064 nm.

84 50 3083 020
Subject to technical changes

LINOS Pockels Cells

BBO Double Pockels Cells


DBBPC Series

BBO-based double Pockels cell


Two crystals in series
With Piezo attenuator
Suited for Q-switch applications with
high repetition rates
Damage threshold: > 300 MW / cm2
at 1064 nm, 10 ns, 1 kHz (typical, not
guaranteed)

DBBPC

Other specications on request


Please state the applied wavelength
when ordering

41
Double BBO Pockels Cells DBBPC Series
Product

Clear aperture
(mm)

Transmission typical
(%)

Extinction ratio
(voltage-free)

/4-voltage1)

Capacity
(pF)

Order-No

DBBPC 3

2.6

98

> 1000:1

1.8kV

84 51 3020 0010

DBBPC 4

3.6

98

> 1000:1

2.4kV

84 51 3020 0011

DBBPC 5

4.6

98

> 1000:1

3.0kV

84 51 3020 0001

DBBPC 6

5.6

98

> 1000:1

3.6kV

1)

DC at 1064 nm
All order numbers valid for 1064 nm.

High quality
All pockels cells series DBBPC
feature a piezodamping and are
ideally suited for applications
which require a precise switch.

84 51 3020 0008
Subject to technical changes

LINOS Pockels Cells

RTPC Pockels Cells Series


RTP-based Pockels cell
Suited for Q-switch applications with
high repetition rates
Two crystals in compensation layout
Wave front deformation: < /4
Damage threshold: > 600 MW / cm2
at 1064 nm, 10 ns, 1 Hz (typical, not
guaranteed)
SC version with short crystals
Optionally available with integrated
Brewster polarizer: RTPC n BP
Optionally available with integrated
/4 disk: RTPC n WP

RTPC 4 SC

Other specications on request


Please state the applied wavelength
when ordering

42

RTPC 3, RTPC 4

RTPC Pockels Cells Series


Product

Clear aperture
(mm)

Transmission
typical (%)

Extinction ratio
(voltage-free)

/4 voltage1)

Capacity
(pF)

Order-No

RTPC 3

2.6

98

> 200:1

0.5kV

84 50 3080 018

RTPC 4 SC

3.6

98

> 200:1

1.3kV

84 50 3080 021

RTPC 4

3.6

98

> 200:1

0.65kV

1)

DC at 1064 nm
All order numbers valid for 1064 nm

High quality
An extremely low switch-voltage combined with high damaging
threshold enable applications where a precise switching with high
repetition rates and very fast drivers is essential.

84 51 3030 0007
Subject to technical changes

LINOS Pockels Cells

Pockels Cells Positioner


Compact and stable design
Easy adjustment of yaw, pitch and
rotation
Adjustment via ne thread screws
For Pockels cells with a diameter of up
to 35 mm
Optionally special OEM modications
available
Positioner 25
(Pockels cell shown not included)

43

Positioner 35
(Pockels cells shown not included)

Pockels Cells Positioner


Product

Diameter Pockels cell


(mm)

Tilt range

Beam height
(mm)

Dimensions
(mm3)

Order-No

Positioner 25

12.7

24

46 x 46 x 40

84 50 3021 127

Positioner 25

19

24

46 x 46 x 40

84 50 3021 190

Positioner 25

21

24

46 x 46 x 40

84 50 3021 210

Positioner 25

23

24

46 x 46 x 40

84 50 3021 230

Positioner 25

25

24

46 x 46 x 40

84 50 3021 250

Positioner 25

25.4

24

46 x 46 x 40

84 50 3021 254

Positioner 35

35

24

56 x 54 x 40

84 50 3021 350
Subject to technical changes

LINOS Pockels Cells

Pockels Cells - Questionnaire


QIOPTIQ Photonics GmbH & Co. KG
Crystal Technology
Hans-Riedl-Strae 9
85622 Feldkirchen
Germany

Phone
Fax
E-mail
Internet

+49(0)89 255 458-100


+49(0)89 255 458-895
laser@qioptiq.de
www.qioptiq.com

Full Name: _____________________________________________


Company Name: ________________________________________
Address: _______________________________________________
Zip Code: ______________________________________________
Country: _______________________________________________

Phone: ________________________________________________
Fax: ___________________________________________________
City: __________________________________________________

1. Laser Pulse Parameter at Location of Pockels Cell1)


44

1.1 Wavelength [nm] ____________________________________________________________________________________________________


1.2 Laser Active Medium ________________________________________________________________________________________________
1.3 Beam Diameter, 1/e2 [mm] ____________________________________________________________________________________________
1.4 Laser Pulse Energy1) __________________________________________________________________________________________________
1.5 Laser Pulse Duration _________________________________________________________________________________________________
1.6 Operating mode, (Mode Locking, Q-switch,
Pulse Picking, Intensity Modulation) ____________________________________________________________________________________

2. Type of Pockels Cell


2.1 Hard Aperture [mm] _________________________________________________________________________________________________
2.2 Transmission[%] ____________________________________________________________________________________________________
2.3 Maximum Extinction [1:x] _____________________________________________________________________________________________
2.4 Crystal [KD*P, BBO, RTP] _____________________________________________________________________________________________
2.5 Operation mode (single pass or double pass)[/4 or /2] ___________________________________________________________________

3. Timing Requirements of High Voltage Switch


3.1 Regenerative / Pulse Picker / Q - Switch __________________________________________________________________________________
3.2 For Regenerative Amplier / Pulse Picker:
- Trigger Electronics for RVD required [Yes/No] ___________________________________________________________________________
- Repetition Rate of Master Osc. [MHz] _________________________________________________________________________________
- Repetition Rate of Regen. Amp. [kHz] _________________________________________________________________________________
- max. rise / fall time of rectangular HV pulse [ns] _________________________________________________________________________
- min. / max. temporal width of rectangular HV pulse [ns] __________________________________________________________________
- range of plateau voltage ____________________________________________________________________________________________
3.3 For Q-switched Laser
- ON / OFF Q-Switching _____________________________________________________________________________________________
- Rep. Rate of Q-switched Laser [kHz] _________________________________________________________________________________

4. Accessories
4.1 Brewsterplate Polarizer [Yes / No] ______________________________________________________________________________________
4.2 /4 - Plate (for ON-Q-Switching) [Yes / No] ______________________________________________________________________________

5. Miscellaneous
5.1 Temperature @ operation [C] _________________________________________________________________________________________
5.2 Humidity @ operation [%] ____________________________________________________________________________________________
5.3 Year [No. of Units] Target Price / Unit _________________________________________________________________________________

6. Comments / Remarks:
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
1)

EPC = EOP/(1-R), EPC: pulse energy at location of Pockels cell;


EOP: pulse energy at output of laser; R: reectivity of output coupler;
regenerative amplier: at the end of the amplication cycle

LINOS Laser Modulators

Laser Modulators
Technical Overview

If the laser beam is polarized in the direction of

Electro-optical crystals are characterized by their

the optical axis, no polarization rotation, but pure

ability to change optical path length in function of an

phase retardation will occur. In principle this allows

applied external voltage. This change depends on the

the user to operate the LM 0202 modulator as a

direction of polarization of the irradiated light. At /2

phase modulator. In this conguration, optimized

voltage, the path length difference of orthogonally

for minimum background retardation, two of the

polarized beams is just half of the wavelength. With

four crystals are electro-optically active for phase

a suitable orientation of the crystals, the polarization

modulation. A special model, LM 0202 PHAS, is

direction of the irradiated light is rotated 90: in this

available with a crystal conguration that uses all

state the light is extinguished by a polarizer. Varying

four crystals for phase modulation.


45

the applied voltage allows quick modulation of the


laser beam intensity. The performance of an electro-

The PM 25 phase modulator, is a Brewster modulator

optic modulator can be understood very simply as

of high optical quality and should be used for

that of a retardation plate with electrically adjustable

loss sensitive applications, especially intracavity

retardation.

modulation.

Mounting

the

modulator

in

the

resonator is simple, as there is no beam deviation or


LM 0202 series modulators use the transverse

displacement.

electro-optical effect: the direction of the light beam


and electric eld are orthogonal. In this conguration,

All modulators use electro-optical crystals that

long crystals with a small cross section have a low

possess strong natural birefringence. The crystals are

halfwave voltage

used in order of compensation and there is no beam


deviation or displacement.

Since most of the electro-optical crystals operate


with a strong background of natural birefringence,

Electro-optic modulators generally require linearly

a compensation scheme is used. Each modulator in

polarized laser light. If the laser light is not sufciently

the LM 0202 series has four crystals as a matched

polarized by itself, an additional polarizer must be

ensemble.

used.

These

crystals

are

fabricated

with

deviations in length less than 100 nm. The crystals are


operated optically in series and electrically parallel.

The LM 0202 P intensity modulator has an integrated


polarizer that is used as an analyzer.

The crystal orientation of the LM 0202 and LM 0202P


modulators has been optimized to minimize the

The modulator voltage input plugs are isolated from

retardation caused by natural birefringence. Just as in

the housing and directly connected to the crystals. A

an ordinary retardation plate, the polarization of the

change of the laser intensity can be observed when

laser beam has to be adjusted at 45 to the optical

the applied voltage is changed. By subsequently

axis in order to achieve a proper 90 rotation.

adjusting voltage and rotation, an extinction better


than 250:1 can be achieved. Selected models with
better extinction ratios are available on request.

LINOS Laser Modulators

Operating an electro-optical modulator between


crossed, or parallel, polarizers yields an intensity
variation given by the following formula:

Applications
The LM 0202 or LM 13 series electro-optical

I = Io sin (U/U/2 /2)

modulators are typically used when intensity,

U/2 - half wave voltage

power, phase or polarization state modulation is

Io - input intensity

required. The devices are ideal for continuous or

U - signal voltage

pulsed laser applications. Standard models, in many


congurations, are available for wavelength ranges

46

It has been assumed that the appropriate offset

or for denite wavelengths between 250 to 1100 nm

voltage has been applied for maximum extinction.

and operation up to 3000 nm is possible with special

The offset voltage causes a shift of the intensity curve

crystals.

over the voltage. The halfwave voltage is proportional


to the wavelength , to the crystal thickness d and in

The modulators are typically used with diode lasers,

reverse proportional to the crystal length l:

solid state lasers, ion lasers, gas lasers or white light


lasers.
These devices are being used in the elds of

Here n0 is the refractive index of the ordinary beam

reprography, stereo lithography, laser projection,

and r63 the electro-optical coefcient of the crystal.

optical storage, printing, research and development


and communication engineering in the laser industry.

In many cases it is advantageous to select an offset


voltage such that the rst order intensity varies

The PM 25 and PM-CBB series are typically used

linearly with voltage. This is achieved by setting the

for fast intra-cavity phase modulation. Therefore

offset voltage to the value required for maximum

very fast control loops, with high feedback gain for

extinction minus

frequency and phase stabilization, can be constructed

U/2

for precision lasers.

The LM 0202 series modulators are hermetically

Selection Criteria

sealed. They can be operated at pressures from

The required wavelength and aperture are determined

100 mbar to 1500 mbar and at a temperature range

based on the existing laser system. Very high laser

between 0C to 50C.

power, in the multiwatt range, requires a large


aperture. Laser lines in the short wave spectral region

Standard models are designed for horizontal

can work problem free with modulators having low

operation. Modulators for vertical use are available by

electro-optical sensitivity: this gives rise to advantages

request. The modulator windows are easily cleaned

in bandwidth and size. A Brewster modulator of

with a mild organic solvent.

high optical quality should be used for loss sensitive


applications, especially intracavity modulation.

LINOS Laser Modulators

Digital Pulse Amplifier LIV 20-iso


For all laser modulators with /2 voltage
up to 400 V
High repetition rate
Compact design
Output Specications:
- Signal voltage1)2): 70 - 420 V
- Rise-/falltime (10 - 90%)3):
< 15 ns, typ. 10 ns
- Repetition rate4): 2 to 20 MHz (depends
on signal voltage)
- Offset-voltage 1) 2): 0 - 400 V
Input Specications:
- Impedance5): pulse 50 / 600 /
mod. 600
- Low state: 0 V to + 0.4 V
- High state: 2.4 V to + 5.5 V
- Trigger threshold: + 1.5 V
- Minimum pulse width : > 30 ns
- Input-output delay, typ.: 50 ns
- Input-output jitter: < 1 ns
- Line Voltage: 230 / 115 V
- Line Frequency: 50 / 60 Hz

Housing Specications:
- Dimensions (WxLxH) 260x330x155 mm
- Weight: app. 9.5 kg
- Power cord and connecting cable to
Modulator included
1)

Relative to ground
This voltage can be set manually or
externally with a control voltage 0 to
+ 10 V (input impendance 5 k)
3)
Optical risetime achieved with a
modulator LM 0202, connected with
special cable (l = 80 cm)
4)
Maximum signal voltage for 5 MHz
operation is 200 V. maximum repetition
rate for 400 V signal voltage is 2 MHz
5)
Modulation allows gating of signal
output
2)

LIV 20-iso
Product

Order-No

Digital Pulse Amplier LIV 20-iso

84 50 2061 000

Sine-Amplifier for Phase Modulators


Compact design
Can be used with PM-C-BB, PM25, LM13
and LM0202
Large modulation bandwidth
High output voltage
Cost effective
Modulator cable and adapters included
Power-supply included (on request with
snap-in multi-plug)
Input waveform: SINE-Wave
Input voltage: max. +13dBm
Bandwidth with LM0202 : appr. 4-7 MHz
Bandwidth with PM-C-BB: appr. 5-12 MHz
Max. Output Voltage with LM0202 appr.
200 V @ 5-7 MHz frequency
Max. Output Voltage with PM-C-BB appr.
500 V @ 8-12 MHz frequency
Supply-Voltage (Power-Supply incl.): +12V DC
Dimensions: 115x65x70 mm

Sine-Amplier
Product

Order-No

Sine-Amplier
for Phase Modulators

84 51 8000 0014

47

LINOS Laser Modulators

Phase Modulator PM 25
Two crystals at Brewster angle in order
of compensation
With Brewster windows
Very high transmission
Connectors: 4 mm banana plugs
Different versions for wavelength ranges
between 250 and 1100 nm

Wavefront distortion < /10 at 633 nm


Bandwidth (3 dB) 100 MHz
Capacitance 30 pF
Max. continuous voltage 1500 V
Operating temperature 10 - 45C
Weight approx. 500 g

Please specify the wavelength or


wavelength range and laser parameters
when ordering.

48

Phase Modulator PM 25
Product

Wavelengths
(nm)

Power capability (W)

Transmission
(%)

Aperture
(mm)

/10-voltage at
633 nm (V)

Order-No

PM ADP

400-650

100 W (> 400 nm), 10 W (< 400 nm)

> 98

5x5

200 10%

84 50 2030 000

PM KD*P

250-1100

100 W (> 400 nm), 10 W (< 400 nm)

> 98

5x5

200 10%

84 50 2031 000
Subject to technical changes

LINOS Laser Modulators

Phase Modulator PM-C-BB

Brewster-cut MgO-LiNbO3 crystal


High photorefractive damage threshold
Broad wavelength range 450 3000 nm
High transmission
Compact design
Small residual amplitude modulation
Connector: 1 x SMA
Wavefront distortion < /4 at 633 nm
Bandwidth DC-500 MHz (> 10 MHz
resonance-free)

49

Phase Modulator PM-C-BB


Product

Wavelength
(nm)

Power capability at
1064 nm1)

Transmission2)

Aperture
(Clear Apertur)

/10-Voltage at
1064 nm

Order-No

PM-C-BB

450-3000

> 100 W / mm2

> 98% (680 - 2000 nm)

1.9 mm (1.5 mm)

100 V 10%

84 51 2090 0006

PM-C-BB (T)3)

450-3000

> 100 W / mm2

> 98% (680 - 2000 nm)

1.9 mm (1.5 mm)

100 V 10%

Adapter plate for 1" mirror mount


1)
2)
3)

CW operation, depends on wavelength


excluded: LiNbO3 absorption at 2.82 - 2.84 m
with built-in active temperature stabilization (< 10 mK)

84 51 2090 0007
84 51 2090 0008
Subject to technical changes

LINOS Laser Modulators

Laser Modulators LM 13
Different versions: Universal modulator,
Intensity modulator (P) with thin lm
polarizer, Phase modulator (PHAS)
With 2 crystals in order of compensation
Connectors: 4 mm banana plugs
Different versions for wavelength ranges
between 250 and 1100 nm

Extinction1) > 250:1 (VIS, IR) or > 100:1 (UV)


Wavefront distortion < /4 at 633 nm
Bandwidth (3 dB) 100 MHz
Capacitance 46 pF
Max. continuous voltage 800 V
Operating temperature 10 - 45C
Weight approx. 500 g

50
1)

Extinction: measured at continuous


wave between crossed polarizers.
Please specify the wavelength or
wavelength range and laser parameters
when ordering.

LM 13 (P) (PHAS)

LM 13 UV KD*P

2)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission2)
(%)

Aperture
(mm)

/2-voltage at
355 nm (V)

Order-No

LM 13

250-310

0.1

> 91 / 88

1.5

240 10%

84 50 2020 020

LM 13

250-310

0.1

> 91 / 88

3.5

390 10%

84 50 2021 020

LM 13

300-390

1.0

> 95 / 92

1.5

240 10%

84 50 2023 019

LM 13

300-390

1.0

> 95 / 92

3.5

390 10%

84 50 2024 019

LM 13 P

250-310

0.1

> 91 / 88

1.5

240 10%

84 50 2026 020

LM 13 P

250-310

0.1

> 91 / 88

3.5

390 10%

84 50 2027 020

LM 13 P

300-390

1.0

> 95 / 92

1.5

240 10%

84 50 2029 019

LM 13 P

300-390

1.0

> 95 / 92

3.5

390 10%

84 50 2030 019

LM 13 PHAS

250-310

0.1

> 91 / 88

1.5

240 10%

84 50 2032 020

LM 13 PHAS

250-310

0.1

> 91 / 88

3.5

390 10%

84 50 2033 020

LM 13 PHAS

300-390

1.0

> 95 / 92

1.5

240 10%

84 50 2035 019

LM 13 PHAS

300-390

1.0

> 95 / 92

3.5

390 10%

Transmission: measured without / with polarizing beamsplitter cube.

84 50 2036 019
Subject to technical changes

LINOS Laser Modulators

StandardPlus
Modulators series LM 13 are also
available with the crystal LiTaO3 as universal or intensity modulator.

LM 13 VIS KD*P

2)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission2)
(%)

Aperture
(mm)

/2-voltage at
633 nm (V)

Order-No

LM 13

400-850

0.1

> 98 / 95

3x3

420 10%

84 50 2020 000

LM 13

400-850

0.1

> 98 / 95

5x5

700 10%

84 50 2021 000

LM 13

400-850

5.0

> 95 / 92

3x3

420 10%

84 50 2023 000

LM 13

400-850

5.0

> 95 / 92

5x5

700 10%

84 50 2024 000

LM 13 P

400-850

0.1

> 98 / 95

3x3

420 10%

84 50 2026 000

LM 13 P

400-850

0.1

> 98 / 95

5x5

700 10%

84 50 2027 000

LM 13 P

400-850

5.0

> 95 / 92

3x3

420 10%

84 50 2029 000

LM 13 P

400-850

5.0

> 95 / 92

5x5

700 10%

84 50 2030 010

LM 13 PHAS

400-850

0.1

> 98 / 95

3x3

420 10%

84 50 2032 000

LM 13 PHAS

400-850

0.1

> 98 / 95

5x5

700 10%

84 50 2033 000

LM 13 PHAS

400-850

5.0

> 95 / 92

3x3

420 10%

84 50 2035 000

LM 13 PHAS

400-850

5.0

> 95 / 92

5x5

700 10%

Transmission: measured without / with polarizing beamsplitter cube.

84 50 2036 000
Subject to technical changes

LM 13 IR KD*P
Product

2)

Wavelengths
(nm)

Power capability
(W)

Transmission2)
(%)

Aperture
(mm)

/2-voltage at
1064 nm (V)

Order-No

LM 13

650-1000

5.0

> 95 / 92

3x3

710 10%

84 50 2023 015

LM 13

950-1100

5.0

> 94 / 91

3x3

710 10%

84 50 2023 016

LM 13 P

650-1000

5.0

> 95 / 92

3x3

710 10%

84 50 2029 015

LM 13 P

950-1100

5.0

> 94 / 91

3x3

710 10%

84 50 2029 016

LM 13 PHAS

650-1000

5.0

> 95 / 92

3x3

710 10%

84 50 2035 015

LM 13 PHAS

650-1000

5.0

> 95 / 92

5x5

1180 10%

84 50 2036 015

LM 13 PHAS

950-1100

5.0

> 94 / 91

3x3

710 10%

84 50 2035 016

LM 13 PHAS

950-1100

5.0

> 94 / 91

5x5

1180 10%

Transmission: measured without / with polarizing beamsplitter cube.

84 50 2036 016
Subject to technical changes

LM 13 IR KD*P High Power

2)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission2)
(%)

Aperture
(mm)

/2-voltage at
1064 nm (V)

Order-No

LM 13

700-950

10

> 94 / 91

1.0

710 10%

84 50 2023 017

LM 13

950-1100

20

> 93 / 90

1.0

710 10%

84 50 2023 018

LM 13 P

700-950

10

> 94 / 91

1.0

710 10%

84 50 2029 017

LM 13 P

950-1100

20

> 93 / 90

1.0

710 10%

84 50 2029 018

LM 13 PHAS

700-950

10

> 94 / 91

1.0

710 10%

84 50 2035 017

LM 13 PHAS

700-950

10

> 94 / 91

3.0

1180 10%

84 50 2036 017

LM 13 PHAS

950-1100

20

> 93 / 90

1.0

710 10%

84 50 2035 018

LM 13 PHAS

950-1100

20

> 93 / 90

3.0

1180 10%

Transmission: measured without / with polarizing beamsplitter cube

84 50 2036 018
Subject to technical changes

51

LINOS Laser Modulators

Laser Modulators LM 0202


Different versions: Universal modulator,
Intensity modulator (P) with thin lm
polarizer, Phase modulator (PHAS)
With 4 crystals in order of compensation
Connectors: 4 mm banana plugs
Different versions for wavelength ranges
between 250 and 1100 nm

LM 0202 (P) (PHAS)

Extinction1) > 250:1 (VIS, IR) or > 100:1 (UV)


Wavefront distortion < /4 at 633 nm
Bandwidth (3 dB) 100 MHz
Capacitance 82 pF
Max. continuous voltage 800 V
Operating temperature 10 - 45C
Weight approx. 800 g

1)

Extinction: measured at continuous wave


between crossed polarizers.
Please specify the wavelength or
wavelength range and laser parameters
when ordering.

StandardPlus
Modulators series LM 0202 are
also available with the crystal
LiTaO3 - as universal or intensity
modulator.

52
LM 0202 UV KD*P

1)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission1)
(%)

Aperture
(mm)

/2-voltage (355 nm)


(V)

Order-No

LM 0202

250-310

0.1

> 88 / 85

1.5

120 10%

84 50 2040 003

LM 0202

250-310

0.1

> 88 / 85

3.5

200 10%

84 50 2041 003

LM 0202

300-390

> 93 / 90

1.5

120 10%

84 50 2049 007

LM 0202

300-390

> 93 / 90

3.5

200 10%

84 50 2050 011

LM 0202 P

250-310

0.1

> 88 / 85

1.5

120 10%

84 50 2043 003

LM 0202 P

250-310

0.1

> 88 / 85

3.5

200 10%

84 50 2044 004

LM 0202 P

300-390

> 93 / 90

1.5

120 10%

84 50 2052 013

LM 0202 P

300-390

> 93 / 90

3.5

200 10%

84 50 2053 006

LM 0202 PHAS

250-310

0.1

> 88 / 85

1.5

120 10%

84 50 2046 004

LM 0202 PHAS

250-310

0.1

> 88 / 85

3.5

200 10%

84 50 2047 004

LM 0202 PHAS

300-390

> 93 / 90

1.5

120 10%

84 50 2055 010

LM 0202 PHAS

300-390

> 93 / 90

3.5

200 10%

84 50 2056 006
Subject to technical changes

Transmission: measured without / with polarizing beamsplitter cube

LM 0202 VIS ADP

1)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission1)
(%)

Aperture
(mm)

/2-voltage (633 nm)


(V)

Order-No

LM 0202

400-650

0.1

> 97 / 94

3x3

210 10%

84 50 2001 000

LM 0202

400-650

0.1

> 97 / 94

5x5

350 10%

84 50 2002 000

LM 0202

400-650

5.0

> 92 / 89

3x3

210 10%

84 50 2010 000

LM 0202

400-650

5.0

> 92 / 89

5x5

350 10%

84 50 2011 000

LM 0202 P

400-650

0.1

> 97 / 94

3x3

210 10%

84 50 2004 000

LM 0202 P

400-650

0.1

> 97 / 94

5x5

350 10%

84 50 2005 000

LM 0202 P

400-650

5.0

> 92 / 89

3x3

210 10%

84 50 2013 000

LM 0202 P

400-650

5.0

> 92 / 89

5x5

350 10%

84 50 2014 000

LM 0202 PHAS

400-650

0.1

> 97 / 94

3x3

210 10%

84 50 2007 000

LM 0202 PHAS

400-650

0.1

> 97 / 94

5x5

350 10%

84 50 2008 000

LM 0202 PHAS

400-650

5.0

> 92 / 89

3x3

210 10%

84 50 2016 000

LM 0202 PHAS

400-650

5.0

> 92 / 89

5x5

350 10%

Transmission: measured without / with polarizing beamsplitter cube

84 50 2017 000
Subject to technical changes

LINOS Laser Modulators

LM 0202 VIS KD*P


Product

1)

Wavelengths
(nm)

Power capability
(W)

Transmission1)
(%)

Aperture
(mm)

/2-voltage (633 nm)


(V)

Order-No

LM 0202

400-850

0.1

> 97 / 94

3x3

210 10%

84 50 2040 000

LM 0202

400-850

0.1

> 97 / 94

5x5

350 10%

84 50 2041 000

LM 0202

400-850

5.0

> 92 / 89

3x3

210 10%

84 50 2049 000

LM 0202

400-850

5.0

> 92 / 89

5x5

350 10%

84 50 2050 005

LM 0202 P

400-850

0.1

> 97 / 94

3x3

210 10%

84 50 2043 000

LM 0202 P

400-850

0.1

> 97 / 94

5x5

350 10%

84 50 2044 000

LM 0202 P

400-850

5.0

> 92 / 89

3x3

210 10%

84 50 2052 000

LM 0202 P

400-850

5.0

> 92 / 89

5x5

350 10%

84 50 2053 000

LM 0202 PHAS

400-850

0.1

> 97 / 94

3x3

210 10%

84 50 2046 000

LM 0202 PHAS

400-850

0.1

> 97 / 94

5x5

350 10%

84 50 2047 000

LM 0202 PHAS

400-850

5.0

> 92 / 89

3x3

210 10%

84 50 2055 000

LM 0202 PHAS

400-850

5.0

> 92 / 89

5x5

350 10%

84 50 2056 000

Transmission: measured without / with polarizing beamsplitter cube

Subject to technical changes

53
LM 0202 IR KD*P

1)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission1)
(%)

Aperture
(mm)

/2-voltage (1064 nm)


(V)

Order-No

LM 0202

650-1000

5.0

> 92 / 89

3x3

360 10%

84 50 2049 001

LM 0202

650-1000

5.0

> 92 / 89

5x5

590 10%

84 50 2050 006

LM 0202

950-1100

5.0

> 90 / 87

3x3

360 10%

84 50 2049 004

LM 0202

950-1100

5.0

> 90 / 87

5x5

590 10%

84 50 2050 007

LM 0202 P

650-1000

5.0

> 92 / 89

3x3

360 10%

84 50 2052 001

LM 0202 P

650-1000

5.0

> 92 / 89

5x5

590 10%

84 50 2053 001

LM 0202 P

950-1100

5.0

> 90 / 87

3x3

360 10%

84 50 2052 004

LM 0202 P

950-1100

5.0

> 90 / 87

5x5

590 10%

84 50 2053 002

LM 0202 PHAS

650-1000

5.0

> 92 / 89

3x3

360 10%

84 50 2055 006

LM 0202 PHAS

650-1000

5.0

> 92 / 89

5x5

590 10%

84 50 2056 001

LM 0202 PHAS

950-1100

5.0

> 90 / 87

3x3

360 10%

84 50 2055 001

LM 0202 PHAS

950-1100

5.0

> 90 / 87

5x5

590 10%

Transmission: measured without / with polarizing beamsplitter cube

84 50 2056 002
Subject to technical changes

LM 0202 IR KD*P High Power

1)

Product

Wavelengths
(nm)

Power capability
(W)

Transmission1)
(%)

Aperture
(mm)

/2-voltage (1064 nm)


(V)

Order-No

LM 0202

700-950

10

> 91 / 88

1.0

360 10%

84 50 2049 006

LM 0202

700-950

10

> 91 / 88

3.0

590 10%

84 50 2050 010

LM 0202

950-1100

20

> 89 / 86

1.0

360 10%

84 50 2049 005

LM 0202

950-1100

20

> 89 / 86

3.0

590 10%

84 50 2050 008

LM 0202 P

700-950

10

> 91 / 88

1.0

360 10%

84 50 2052 012

LM 0202 P

700-950

10

> 91 / 88

3.0

590 10%

84 50 2053 005

LM 0202 P

950-1100

20

> 89 / 86

1.0

360 10%

84 50 2052 011

LM 0202 P

950-1100

20

> 89 / 86

3.0

590 10%

84 50 2053 003

LM 0202 PHAS

700-950

10

> 91 / 88

1.0

360 10%

84 50 2055 009

LM 0202 PHAS

700-950

10

> 91 / 88

3.0

590 10%

84 50 2056 005

LM 0202 PHAS

950-1100

20

> 89 / 86

1.0

360 10%

84 50 2055 008

LM 0202 PHAS

950-1100

20

> 89 / 86

3.0

590 10%

84 50 2056 004

Transmission: measured without / with polarizing beamsplitter cube

Subject to technical changes

Laser Modulators

Laser Modulators - Questionnaire


QIOPTIQ Photonics GmbH & Co. KG
Crystal Technology
Hans-Riedl-Strae 9
85622 Feldkirchen
Germany
Phone
Fax
E-mail
Internet

54

+49(0)89 255 458-100


+49(0)89 255 458-895
laser@qioptiq.de
www.qioptiq.com

Full Name: _____________________________________________


Company Name: ________________________________________
Address: _______________________________________________
Zip Code: ______________________________________________
Country: _______________________________________________

Phone: ________________________________________________
Fax: ___________________________________________________
City: __________________________________________________

1. Laser Pulse Parameter at Location of Modulator


1.1 Wavelength [nm] ____________________________________________________________________________________________________
1.2 Continuous-Wave Laser Power [W] _____________________________________________________________________________________
1.3 Beam Diameter, 1/e2 [mm] ____________________________________________________________________________________________
1.4 Laser Pulse Energy ___________________________________________________________________________________________________
1.5 Laser Pulse Duration [ns] ______________________________________________________________________________________________
1.6 Repetition Rate [MHz] ________________________________________________________________________________________________

2. Type of Modulator
2.1 Hard Aperture [mm] _________________________________________________________________________________________________
2.2 Transmission [%] ____________________________________________________________________________________________________
2.3 Maximum Extinction [1:x] _____________________________________________________________________________________________
2.4 Crystal [KD*P, ADP] __________________________________________________________________________________________________
2.5 Number of crystals (2 or 4) _____________________________________________________________________________________________
2.6 Universal-, Intensity-, Phase-Modulator __________________________________________________________________________________

3. If a driver (Amplier) is required...


3.1 Digital- or Analog-Amplier ___________________________________________________________________________________________
3.2 Switching Voltage [V] _________________________________________________________________________________________________
3.3 Rise-/Fall-Time [ns] ___________________________________________________________________________________________________
3.4 Duration [ns] _______________________________________________________________________________________________________
3.1 Repetition Rate [MHz] ________________________________________________________________________________________________

4. Estimate Number of Units


4.1 Year [No. of Units] Target Price/Unit ____________________________________________________________________________________

5. Comments / Remarks:
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________
______________________________________________________________________________________________________________________

coming soon
Laser Power Stabilization Series
Operation modes:
- Modulation: (no stabilization) up to 2 kHz
- Setpoint: Stabilization to preset transmission value
- Autolock: Stabilization to maximum possible
transmission value
Optical output stability < 0.1% (1h)
Large stabilization bandwidth DC 300 kHz
Optional wireless photodiode for external stabilization
USB interface

Compact two stage Faraday Isolator Series


High isolation (> 60dB) and high transmission
at further reduced size for space critical applications

FI-780-5 TVC
Outer dimensions: FI-780-TV: 40 x 40 x 106 mm
New TVC verion: 40 x 40 x 78 mm

FI-920-5 TIC
Outer dimensions FI-920-TI: 58 x 58 x 131 mm
New TIC version: 45 x 45 x 90 mm

Other wavelengths available upon request

55

Discover the Q!

56

Qioptiq supplies cutting edge technology for all


optical requirements of Industrial Manufacturing.
Worldwide production capacities and state-of-theart manufacturing plants guarantee an impressive
portfolio of photonic products and solutions.
Join us on a journey of discovery in our Crystal
Technology brochure!

Photonics for Innovation

For technical information contact:


Qioptiq
www.qioptiq.com
photonics@qioptiq.com

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