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PROFET ITS428L2

Smart High-Side Power Switch


for Industrial Applications
One Channel: 60m
Status Feedback
Product Summary
On-state Resistance
Operating Voltage
Nominal load current
Current limitation
Operating temperature

Package
RON
Vbb(on)
IL(NOM)
IL(SCr)
Ta

PG-TO252-5-11

60m
4.75...41V
7.0A
17A
-30 +85C

General Description

N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions

Applications

C compatible high-side power switch with diagnostic feedback for 5V, 12V and 24V grounded loads in
industrial applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits

Basic Functions

Very low standby current


CMOS compatible input
Improved electromagnetic compatibility (EMC)
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
Wide operating voltage range
Logic ground independent from load ground

Block Diagram

Protection Functions

Short circuit protection


Overload protection
Current limitation
Thermal shutdown
Overvoltage protection (including load dump) with external
resistor
Reverse battery protection with external resistor
Loss of ground and loss of Vbb protection
Electrostatic discharge protection (ESD)

Diagnostic Function

Diagnostic feedback with open drain output


Open load detection in ON-state
Feedback of thermal shutdown in ON-state

Infineon Technologies AG

Page 1 of 13

Vbb

IN
ST

Logic
with
protection
functions

PROFET

OUT
Load

GND

2006-Mar-16

PROFET ITS428L2
Functional diagram

overvoltage
protection
internal
voltage supply

logic

gate
control
+
charge
pump

current limit

VBB

clamp for
inductive load
OUT

temperature
sensor

IN
ESD

LOAD

Open load
detection

ST
GND

PROFET

Pin configuration

Pin Definitions and Functions


Pin

Symbol

Function

GND

Logic ground

IN

Input, activates the power switch in


case of logical high signal

Vbb

Positive power supply voltage


The tab is shorted to pin 3

ST

Diagnostic feedback, low on failure

(top view)

Tab = VBB

GND IN

OUT

Output to the load

Tab

Vbb

Positive power supply voltage


The tab is shorted to pin 3

Infineon Technologies AG

Page 2

(3)

ST OUT

2006-Mar-16

PROFET ITS428L2
Maximum Ratings at Tj = 25 C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
Tj Start=-40 ...+150C
Load
dump protection1) VLoadDump = VA + Vs, VA = 13.5 V
2)
RI = 2 , RL= 4.0 , td= 200 ms, IN= low or high
Load current (Current limit, see page 5)
Junction temperature
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 C
Maximal switchable inductance, single pulse
Vbb = 12V, Tj,start = 150C, TC = 150C const.
4
(See diagram on page 9)
IL(ISO) = 7 A, RL = 0 ; E )AS=0.19J:

Electrostatic discharge capability (ESD)


IN:
(Human Body Model)
ST:
out to all other pins shorted:

Symbol
Vbb
Vbb
3)

VLoad dump
IL
Tj
Ta
Tstg
Ptot
ZL
VESD

Values
43
24

Unit
V
V

60

self-limited
150
-30 ...+85
-40 ...+105
75

A
C

5.6
1.0
4.0
8.0

mH
kV

-10 ... +16


2.0
5.0

V
mA

Values
typ
max
-- 1.67
-75
42
--

Unit

acc. MIL-STD883D, method 3015.7 and


ESD assn. std. S5.1-1993; R=1.5k; C=100pF

Input voltage (DC)


Current through input pin (DC)
Current through status pin (DC)

VIN
IIN
IST

see internal circuit diagrams page 8

Thermal Characteristics
Parameter and Conditions
Thermal resistance

1)
2)
3)
4)
5)

Symbol

chip - case: RthJC


junction - ambient (free air): RthJA
device on pcb5):

min
----

K/W

Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended).
RI = internal resistance of the load dump test pulse generator
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
EAS is the maximum inductive switch-off energy
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.

Infineon Technologies AG

Page 3

2006-Mar-16

PROFET ITS428L2
Electrical Characteristics
Parameter and Conditions

Symbol

at Tj =-40...+150C, Vbb = 12 V unless otherwise specified

Values
min
typ
max

Unit

Load Switching Capabilities and Characteristics


On-state resistance (pin 3 to 5)
IL = 2 A; VBB 7V
see diagram, page 10

Tj=25 C: RON
Tj=150 C:

Nominal load current, (pin 3 to 5)

--

50
100

60
120

5.8

7.0

--

--

--

mA

30
30

100
100

200
200

dV /dton

0.1

--

V/s

-dV/dtoff

0.1

--

V/s

4.75

41
43
-52
9
25
10

41
43
----

---47
5
-1

--

0.8

1.5

IL(ISO)

ISO 10483-1, 6.7:VON=0.5V, TC=85C

Output current (pin 5) while GND disconnected or


GND pulled up6) , Vbb=30 V, VIN= 0,

IL(GNDhigh)

see diagram page 8

Turn-on time
IN
Turn-off time
IN
RL = 12 ,
Slew rate on
10 to 30% VOUT, RL = 12 ,
Slew rate off
70 to 40% VOUT, RL = 12 ,

to 90% VOUT: ton


to 10% VOUT: toff

Operating Parameters
Operating voltage

Tj =-40 Vbb(on)
Tj =+25...+150C:
Overvoltage protection7)
Tj =-40C: Vbb(AZ)
Ibb=40 mA
Tj =25...+150C:
Standby current (pin 3) 8)
Tj=-40...+25C: Ibb(off)
VIN=0; see diagram on page 10
Tj= 150C:
IL(off)
Off-State output current (included in Ibb(off))
VIN=0
Operating current 9), VIN=5 V
IGND

6)
7)

9)

V
A
A
mA

not subject to production test, specified by design


Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins (a 150
resistor for the GND connection is recommended. See also VON(CL) in table of protection functions and
circuit diagram page 8.
Measured with load
Add IST, if IST > 0, add IIN, if VIN>5.5 V

Infineon Technologies AG

Page 4

2006-Mar-16

PROFET ITS428L2
Parameter and Conditions

Symbol

at Tj =-40...+150C, Vbb = 12 V unless otherwise specified

Protection Functions10)
Current limit (pin 3 to 5)

Values
min
typ
max

Unit

IL(lim)

Tj =-40C:
Tj =25C:
Tj =+150C:
Repetitive short circuit shutdown current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 12)
Thermal shutdown time11
Tj,start = 25C: toff(SC)
(see timing diagrams on page 12)

21
17
12

28
22
16

36
31
24

---

17
7.5

---

A
ms

41
43
150
---

47
-10
--

52
--32

V
C
K
V

--

600

--

mV

10

--

500

mA

(see timing diagrams on page 12)

Output clamp (inductive load switch off)


at VOUT = Vbb - VON(CL)
IL= 40 mA:
Thermal overload trip temperature
Thermal hysteresis
Reverse battery (pin 3 to 1) 12)
Reverse battery voltage drop (Vout > Vbb)13)
IL = -2 A
Tj=150 C:
Diagnostic Characteristics
Open load detection current

VON(CL)
Tjt
Tjt
-Vbb
-VON(rev)

IL (OL)

(on-condition)

10)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are
not designed for continuous repetitive operation.
11)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb
connection. PCB is vertical without blown air.
12)
Requires 150 resistor in GND connection. The reverse load current through the intrinsic drain-source
diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal
operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature
protection is not active during reverse current operation! Input and Status currents have to be limited (see
max. ratings page 3 and circuit page 8).
13)
not subject to production test, specified by design

Infineon Technologies AG

Page 5

2006-Mar-16

PROFET ITS428L2
Parameter and Conditions

Symbol

Values
min
typ
max

RI

2.5

3.5

VIN(T+)
VIN(T-)
VIN(T)
IIN(off)
IIN(on)
td(ST OL4)

1.7
1.5
-1
20
100

--0.5
-50
520

3.2
--50
90
900

V
V
V
A
A
s

IST = +1.6 mA: VST(high)


IST = +1.6 mA: VST(low)

5.4
--

6.1
--

-0.4

at Tj =-40...+150C, Vbb = 12 V unless otherwise specified

Input and Status Feedback14)


Input resistance
see circuit page 8
Input turn-on threshold voltage
Input turn-off threshold voltage
Input threshold hysteresis
Off state input current (pin 2), VIN = 0.4 V
On state input current (pin 2), VIN = 5 V
Delay time for status with open load after switch off
(see timing diagrams on page 12)

Status output (open drain)


Zener limit voltage
ST low voltage

14)

Unit

If a ground resistor RGND is used, add the voltage drop across this resistor.

Infineon Technologies AG

Page 6

2006-Mar-16

PROFET ITS428L2

Truth Table

Normal
operation
Open load
Overtemperature
L = "Low" Level
H = "High" Level

Input

Output

Status

level
L
H
L
H
L
H

level
L
H
Z
H
L
L

BTS 428L2

H
H
H
L
H
L

X = don't care
Z = high impedance, potential depends on external circuit
Status signal after the time delay shown in the diagrams (see fig 5. page 12)

Infineon Technologies AG

Page 7

2006-Mar-16

PROFET ITS428L2
Terms

Overvolt. and reverse batt. protection


+ 5V

+ Vbb

Ibb
3

I IN
2

IN

IL

IN

V ST

OUT

PROFET

I ST
V

R ST
IN

VON

Z2

Logic
R ST ST

GND
1

RI

ST

bb

Vbb

OUT
V

IGND

V OUT

PROFET

Z1

GND

GND

R GND
Signal GND

Input circuit (ESD protection)


R
IN

Load GND

VZ1 = 6.1 V typ., VZ2 = 47 V typ., RGND = 150 ,


RST= 15 k, RI= 3.5 k typ.
In case of reverse battery the load current has to be
limited by the load. Temperature protection is not
active

ESD-ZD I

R Load

Open-load detection in on-state


Open load, if VON < RONIL(OL); IN high

GND

+ V bb

The use of ESD zener diodes as voltage clamp at DC


conditions is not recommended

Status output

VON

ON

+5V

OUT

R ST(ON)

GND

Open load
detection

Logic
unit

ST

ESDZD

ESD-Zener diode: 6.1 V typ., max 5.0 mA; RST(ON) < 375
at 1.6 mA. The use of ESD zener diodes as voltage clamp at
DC conditions is not recommended.

GND disconnect
3

Inductive and overvoltage output clamp


2

+ V bb
V

IN

Vbb
PROFET

4
VON

bb

IN

ST

OUT

ST
GND
1

V
GND

OUT
GND

PROFET

Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) .


Due to VGND >0, no VST = low signal available.

VON clamped to 47 V typ.

Infineon Technologies AG

Page 8

2006-Mar-16

PROFET ITS428L2
Inductive Load switch-off energy
dissipation

GND disconnect with GND pull up

E bb

IN

Vbb

E AS

PROFET
4

OUT

IN

ST
GND

PROFET

1
V

V
bb

=
V

IN ST

ELoad

Vbb
OUT

ST
GND

GND

ZL

Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.

Vbb disconnect with energized inductive


load

IN

Vbb
PROFET

ER

Energy stored in load inductance:


2

EL = 1/2LI L

OUT

EAS= Ebb + EL - ER= VON(CL)iL(t) dt,


5

with an approximate solution for RL > 0 :

ST

IL L
ILRL
)
EAS= 2R (Vbb + |VOUT(CL)|) ln (1+ |V
L
OUT(CL)|

GND
1

RL

EL

While demagnetizing load inductance, the energy


dissipated in PROFET is

3
high

Maximum allowable load inductance for


a single switch off

bb

For inductive load currents up to the limits defined by ZL


(max. ratings and diagram on page 9) each switch is
protected against loss of Vbb.
Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current
flows through the GND connection.

L = f (IL ); Tj,start = 150C,TC = 150C const.,


Vbb = 12 V, RL = 0
ZL [mH]
1000

100

10

0.1
2

12

17

IL [A]

Infineon Technologies AG

Page 9

2006-Mar-16

PROFET ITS428L2
Typ. on-state resistance
RON = f (Vbb,Tj ); IL = 2 A, IN = high
RON [m]

175
150
125
Tj=150C

100
75

25C

50

-40C
25
0
3

30

40
Vbb [V]

Typ. standby current


Ibb(off) = f (Tj ); Vbb = 9...34 V, IN1,2 = low
Ibb(off) [A]
45
40
35
30
25
20
15
10
5
0
-50

50

Infineon Technologies AG

100

150

200
Tj [C]

Page 10

2006-Mar-16

PROFET ITS428L2
Timing diagrams
Figure 2b: Switching a lamp,

Figure 1a: Vbb turn on:


IN

IN
V bb

ST
V
OUT

ST open drain

I
t

OUT

t
proper turn on under all conditions
The initial peak current should be limited by the lamp and not by the
current limit of the device.

Figure 2c: Switching an inductive load

Figure 2a: Switching a resistive load,


turn-on/off time and slew rate definition:

IN

IN

VOUT

ST

90%
t on

dV/dtoff
V

OUT

dV/dton
10%

off

IL

I L(OL)
t

t
*) if the time constant of load is too large, open-load-status may
occur

Infineon Technologies AG

Page 11

2006-Mar-16

PROFET ITS428L2
Figure 3a: Short circuit
shut down by overtemperature, reset by cooling
IN

Figure 5a: Open load: detection in ON-state, open


load occurs in on-state

other channel: normal operation

IN

t
d(ST OL)

ST

ST

d(ST OL)

L(lim)
I

VOUT

L(SCr)

off(SC)

normal
L

open

normal

t
Heating up of the chip may require several milliseconds, depending
on external conditions

Figure 4a: Overtemperature:


Reset if Tj <Tjt

t
td(ST OL) = 10 s typ.

Figure 5b: Open load: turn on/off to open load

IN

IN

ST

d(STOL4)

ST

I
V

OUT

t
T

Infineon Technologies AG

Page 12

2006-Mar-16

PROFET ITS428L2
Package and Ordering Code
All dimensions in mm

DPAK-5 Pin: PG-TO252-5-11


Sales code

ITS428L2

Ordering code

SP000221220

6.5

+0.15
-0.05

1)

1) Includes mold flashes on each side.


All metal surfaces tin plated, except area of cut.

We hereby disclaim any and all warranties, including but not


limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.

Information
0.5 +0.08
-0.04
0.1 B

0.25 M A B

Terms of delivery and rights to technical change reserved.

Infineon Technologies is an approved CECC manufacturer.

0.51 MIN.

5 x 0.6 0.1
1.14

4.56

0.5 +0.08
-0.04

0.9 +0.20
-0.01
0...0.15

0.8 0.15

(4.24) 1 0.1

9.98 0.5
6.22 -0.2

0.15 MAX.
per side

(5)

Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.

2.3 +0.05
-0.10

5.7 MAX.

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 Mnchen
Infineon Technologies AG 2006
All Rights Reserved.

For further information on technology, delivery terms and


conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.

Infineon Technologies AG

Page 13

2006-Mar-16

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