Electronic Devices Assignment 1

1. Determine the probability that an energy level 3kT above the Fermi energy is occupied by
an electron. Let T = 300 K.
2. Derive the expression for hole concentration

=  exp[(  )/]
3. At room temperature (300 K) the effective density of states in the valence band is 2.66 x
1019 cm-3 for silicon and 7 x 1018 cm-3 for gallium arsenide. Find the corresponding effective
masses of holes. Compare these masses with the free-electron mass.
4. Calculate the location of Ei in silicon at liquid nitrogen temperature (77 K), at room
temperature (300 K), and at 100C (let mp =1.0 m0 and mn = 0.19 m0 ; Eg = 1.12 eV).
5. Find the average kinetic energy of electrons in the conduction band of a nondegenerate n-
type semiconductor at 300 K. {Average kinetic energy means the total kinetic energy
divided by the total number of electrons; kinetic energy of an electron with energy E will
be (E-EC); integration of kinetic energy over the electron number distribution will be
required}
6. A silicon sample at T = 300 K contains an acceptor impurity concentration of NA = 1016
cm-3. Determine the concentration of donor impurity atoms that must be added so that the
silicon is n-type and the Fermi energy is 0.20 eV below the conduction band edge.
{NC=2.86e19/cm3}
7. Draw a simple flat energy band diagram for silicon doped with 1016 Arsenic atoms/cm3
at77 K, 300 K, and 600 K. Show the Fermi level and use the intrinsic Fermi level as the
energy reference. (let mp =1.0 m0 and mn = 0.19 m0 ; Eg = 1.12 eV; ni = 1010 cm-3).
8. Find the electron and hole concentrations and Fermi level in silicon at 300 K (a) for 1 x1015
boron atoms/cm3 and (b) for 3 x 1016 boron atoms/cm3 and 2.9 x 1016 arsenic atoms/cm3.
9. A Si sample is doped with 1017 As atoms/cm3. What is the equilibrium hole concentration
po at 300 K? Where is EF relative to Ei?
10. Determine the equilibrium electron and hole concentrations inside a uniformly doped
sample of Si under the following conditions:
(a) T=300K, NA
ND, ND=1013/cm3; (b) T=300K, NA=9x1015/cm3, ND=1016 cm3.
(c) T=650K, NA=0, ND=1014/cm3.(take ni = 1016/cm3)
11. Calculate the Fermi level of silicon doped with 1015 ,1017, and 1019 phosphorus atoms/cm3
at room temperature, assuming complete ionization. From the calculated Fermi level, check
if the assumption of complete ionization is justified for each doping. Assume that the
ionized donor concentration is given by

 =  [1  ( )] =
1 +  )/
(
(Given that EC-ED = 45 meV)
12. For an n-type silicon sample with 1016 cm-3 phosphorous donor impurities and a donor level
at ED= 0.045 eV below EC , find the ratio of the neutral donor density to the ionized donor
density at 77 K where the Fermi level is 0.0459 eV below the bottom of the conduction
band.