1 2 300 m

METALLIZATION OF NITRIDE CERAMICS BY

ACTIVE METAL BRAZING
D ipl. - Ing. A nd re a s P n i ck e , D r. Jo c h e n S c hi l m

Ceramic substrates metallized with copper are widely used as Process scheme for manufacturing of structured
circuit boards for power electronics (e.g. IGBT modules, ceramic-metal composites by active metal brazing
switching power supplies, power inverter). However, appropri-
ate substrates have to match a number of requirements. High
heat losses caused by high current densities of mounted semi-
conductor components require composite materials with good
heat conductivity or low thermal resistance as well as high sta-
bility against thermal cycles. These parameters mainly deter-
mine the lifetime of the circuit boards. Due to high CTE values
and low thermal conductivities, oxide ceramics such as alu-
mina (Al2O3) are limited in their suitability for these applica-
tions. Alternatives are the substrates made of aluminum
nitride (AlN) or silicon nitride (Si3N4) ceramics. AlN is preferably
used because of its excellent properties and high thermal con-
ductivity. Due to a higher bending strength and better thermal During the brazing process various failures can occur such as
shock resistance, Si3N4 represents a superior solution for appli- pore formation, delaminations or spreading of the molten
cations with fast thermal cycles. braze, causing short circuits of the conducting paths on the
substrate. Within research projects different analysis methods
The bonding process of copper to ceramic substrates (such as were applied in order to develop countermeasures for a con-
Al2O3 and AlN) is mainly realized by a process called direct cop- siderably higher quality and reliability of metallized ceramic
per bonding (DCB) without any additional interlayers. Active substrates. The reactivity of the active filler brazes and the joint
metal brazing (AMB) of metallic foils to ceramic substrates in materials were analyzed by DTA as well as defects in brazed
vacuum or in a protective atmosphere is used as an alternative components by scanning acoustic microscopy and SEM.
bonding process (Figure 1 and 2). In case of DCB substrates
the bonding phase is formed by a brittle ceramic phase. In Based on these results, relevant parameters for the brazing
comparison to DCB substrates, the joint strength is signifi- process were varied systematically by using bench-scale fur-
cantly higher and the active filler braze forms a ductile inter- naces:
layer, what in turn results in a superior thermal shock - Furnace profiles (argon, vacuum)
resistance. - Surface treatment of copper foils
- Surface quality of ceramic substrates
- Content of the active element titanium in brazing pastes

78 Fraunhofer IKTS Annual Report 2012/13

 Nickel foil

Ag-Cu filler braze

AlN

Before optimization After optimization

3 5 mm 4 10 m

Results from DTA analysis of reactions between active Services offered

filler braze, copper and AlN
- Development and characterization of ceramic-metal joints
- Optimization of brazing pastes and technologies
- Screen printing and dispensing technologies for the applica-
tion of brazing pastes
- Furnace technologies for induction brazing and brazing
processes in protective atmospheres and vacuum (up to
2400C, up to 10-5 mbar, max. 20 dm)
- Non-destructive and destructive testing and characterization
of brazed joints
- Investigation of long-term stability in oxidizing atmospheres
and in aggressive media (gaseous and liquid) at high tem-
peratures

As a result of these investigations, the reliability of the brazing

process was improved and a significant increase of yield in
manufacturing of copper-AlN and copper-Si3N4 joints in indus-
try was achieved (Figure 3).

Additionally, active metal brazing (AMB) offers the possibility

to realize other metallizations on nitride ceramics, what makes
this process attractive for new applications. Thermoelectric
modules, for example, require oxidation resistant metallized
ceramic substrates with high thermal shock resistance and 1 Metallized nitride ceramics
high ampacity of the conducting paths. The limited stability of with etched conducting paths.
copper at temperatures above 150C suggests the application 2 Cross-section of a defect-free
of the more stable metallization layers such as nickel or refrac- active metal brazed AlN-metal
tory metals for the ceramic substrates (Figure 4). joint.
3 Microscopic image of spread
braze between conducting
paths on Si3N4.
4 SEM image of a brazed seam
in between a nickel-AlN joint.

Contact Dr. Jochen Schilm Phone +49 351 2553-7824 jochen.schilm@ikts.fraunhofer.de 79