Ordering number : ENA1148 2SA2222

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SANYO Semiconductors
DATA SHEET

2SA2222 PNP Epitaxial Planar Silicon Transistor

High-Current Switching Applications

Applications
Relay drivers, lamp drivers, motor drivers.

Features
Adoption of MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO --50 V
Collector-to-Emitter Voltage VCEO --50 V
Emitter-to-Base Voltage VEBO --6 V
Collector Current IC --10 A
Collector Current (Pulse) ICP --13 A
Base Current IB --2 A
2 W
Collector Dissipation PC
Tc=25C 25 W
Junction Temperature Tj 150 C
Storage Temperature Tstg --55 to +150 C

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
32608FA TI IM TC-00001283 No. A1148-1/4
 2SA2222
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Electrical Characteristics at Ta=25C
Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=--40V, IE=0A --10 A
Emitter Cutoff Current IEBO VEB=--4V, IC=0A --10 A
DC Current Gain hFE VCE=--2V, IC=--270mA 150 450
Gain-Bandwidth Product fT VCE=--10V, IC=--1A 230 MHz
Output Capacitance Cob VCB=--10V, f=1MHz 115 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=--6A, IB=--300mA --250 --500 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=--6A, IB=--300mA --1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=--100A, IE=0A --50 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=--1mA, RBE= --50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=--100A, IC=0A --6 V
Turn-ON Time ton See specified Test Circuit. 40 ns
Storage Time tstg See specified Test Circuit. 240 ns
Fall Time tf See specified Test Circuit. 22 ns

Package Dimensions Switching Time Test Circuit

unit : mm (typ)
7508-002
PW=20s IB1
D.C.1%
10.0 4.5 IB2 OUTPUT
3.2 2.8 INPUT

VR RB
3.5

RL
7.2

50 + +
16.0

100F 470F
18.1

VBE=5V VCC= --20V

1.6
IC=20IB1= --20IB2= --5A
5.6

1.2
14.0

0.75 0.7

1 2 3
1 : Base
2.4

2 : Collector
3 : Emitter

2.55 2.55
SANYO : TO-220ML

IC -- VCE IC -- VCE
--10 --5.0
mA

--100m --90mA
A

A
--80m --70mA A --30mA
A

0m
0m

--35m
0m
--500mA--400

--9 --4.5
--60mA
--7
0

--25mA
--3

--1

--8 --50mA --4.0

Collector Current, IC -- A
Collector Current, IC -- A

A
--40m --20mA
--7 --40mA --3.5
--90mA A
--6
--30mA
--3.0 --45m --15mA
--100mA
mA
--5
--200 --2.5
A--50m
A
--20mA --60m --10mA
--4 --2.0

--3 --1.5 A
--10mA --80m --5mA
--2 --1.0

--1 --0.5

0
IB=0mA 0
IB=0mA
0 --1 --2 --3 --4 --5 0 --0.5 --1.0 --1.5 --2.0
Collector-to-Emitter Voltage, VCE -- V IT13441 Collector-to-Emitter Voltage, VCE -- V IT13442

No. A1148-2/4
 2SA2222
www.DataSheet4U.com IC -- VBE hFE -- IC
--25 1000
VCE= --2V VCE= --2V
7
Ta=75C
5
--20
Collector Current, IC -- A

3 25C

DC Current Gain, hFE

2 --25C
--15

100

--10 7
5

C --25C
C
75

3
--5
Ta=

2
25

0 10
0 --0.5 --1.0 --1.5 --2.0 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5
Base-to-Emitter Voltage, VBE -- V IT13443 Collector Current, IC -- A IT13444
hFE -- IC fT -- IC
7 5
Ta=25C VCE= --10V
5

Gain-Bandwidth Product, fT -- MHz

3
3
2
V CE
DC Current Gain, hFE

2
= --

100
--0.5 --0

2.0
--0.2

100
V

7
V .7V
V

7
5
5
--1.0

3
3
V

2 2

10 10
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10
Collector Current, IC -- A IT13445 Collector Current, IC -- A IT13446
Cob -- VCB VCE(sat) -- IC
7 3
f=1MHz 2 IC / IB=20
5
Saturation Voltage, VCE(sat) -- V

--1.0
Output Capacitance, Cob -- pF

7
3 5

3
2
2
Collector-to-Emitter

--0.1
7 C
100 5
C

5
a =7
25

T C
7 3 5
2 --2
5
--0.01
7
3 5
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector-to-Base Voltage, VCB -- V IT13447 Collector Current, IC -- A IT13448
VCE(sat) -- IC VBE(sat) -- IC
5 3
IC / IB=50 IC / IB=20
3
Saturation Voltage, VCE(sat) -- V

2
Saturation Voltage, VBE(sat) -- V

--1.0
7
5
--1.0
Collector-to-Emitter

3
Ta= --25C
2 7
Base-to-Emitter

25C
--0.1
C C 75C
75
5
7
Ta= --25
5

3 C
25 3
2

--0.01 2
--0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3
Collector Current, IC -- A IT13449 Collector Current, IC -- A IT13450

No. A1148-3/4
 2SA2222
www.DataSheet4U.com Forward Bias A S O PC -- Ta
3 2.5
2 ICP= --13A
--10
IC= --10A

PT
1m
7 10

Collector Dissipation, PC -- W
2.0
5 0m

=5
Collector Current, IC -- A

s
s

00
3

s
DC
2

10
ms
1.5

op
--1.0 No

era
7 he

tio
5 at

n
sin
3 k
1.0
2
--0.1
7
5 0.5
3
2 Tc=25C
Single pulse
--0.01 0
--0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 5 7 --100 0 20 40 60 80 100 120 140 160
Collector-to-Emitter Voltage, VCE -- V IT13451 Ambient Temperature, Ta -- C IT13452
PC -- Tc
30

25
Collector Dissipation, PC -- W

20

15

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C IT13453

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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
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In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
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Any and all information described or contained herein are subject to change without notice due to
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SANYO Semiconductor Co.,Ltd. product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of March, 2008. Specifications and information herein are subject
to change without notice.

PS No. A1148-4/4