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STB60NE06L-16

N - CHANNEL 60V - 0.014 - 60A - D2PAK


SINGLE FEATURE SIZE POWER MOSFET
PRELIMINARY DATA
TYPE V DSS R DS(on) ID
ST B60NE06L-16 60 V <0.016 60 A
TYPICAL RDS(on) = 0.014
AVALANCE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100 oC
LOW GATE CHARGE
HIGH CURRENT CAPABILITY
3
175oC OPERATING TEMPERATURE
1
APPLICATION ORIENTED
D2PAK
CHARACTERIZATION
TO-263
DESCRIPTION (Suffix T4)
This Power MOSFET is the latest development of
STMicroelectronics unique Single Feature
Size strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche INTERNAL SCHEMATIC DIAGRAM
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.

APPLICATIONS
HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
DC-DC & DC-AC CONVERTER
AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS


Symbol Parameter Value Uni t
V DS Drain-source Voltage (V GS = 0) 60 V
V DGR Drain- gate Voltage (R GS = 20 k) 60 V
V GS Gate-source Voltage 20 V
o
ID Drain Current (continuous) at Tc = 25 C 60 A
o
ID Drain Current (continuous) at Tc = 100 C 42 A
IDM () Drain Current (pulsed) 240 A
o
P t ot Total Dissipation at Tc = 25 C 150 W
Derating F actor 0.57 W/ o C
dv/dt Peak Diode Recovery voltage slope 1 V/ ns
o
T stg Storage T emperature -65 to 175 C
o
Tj Max. O perating Junction Temperature 175 C
() Pulse width limited by safe operating area ( 1) ISD 60 A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX

June 1998 1/5


STB60NE06L-16

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 1 C/W
Rthj -amb Thermal Resistance Junction-ambient Max 62.5 oC/W
o
R thc- si nk Thermal Resistance Case-sink Typ 0.5 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS
Symb ol Parameter Max Valu e Unit
I AR Avalanche Current, Repetitive or Not-Repetitive 60 A
(pulse width limited by Tj max)
E AS Single Pulse Avalanche Energy 600 mJ
(starting Tj = 25 o C, I D = IAR , VDD = 25 V)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)


OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V (BR)DSS Drain-source I D = 250 A V GS = 0 60 V
Breakdown Voltage
I DSS Zero G ate Voltage V DS = Max Rating 1 A
o
Drain Current (VGS = 0) V DS = Max Rating T c = 125 C 10 A
I GSS Gate-body Leakage V GS = 20 V 100 nA
Current (V DS = 0)

ON ()
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
V GS(th) Gate Threshold V DS = VGS ID = 250 A 1 1.6 2.5 V
Voltage
R DS( on) Static Drain-source On V GS = 5 V ID = 30 A 0.014 0.016
Resistance V GS = 10V ID = 30 A 0.012 0.014

ID(o n) On State Drain Current V DS > I D(on) x R DS(on) max 60 A


V GS = 10 V

DYNAMIC
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
g fs () Forward V DS > I D(on) x R DS(on) max I D =30 A 22 23 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VGS = 0 3200 4600 pF
C oss Output Capacitance 950 1400 pF
C rss Reverse T ransfer 320 480 pF
Capacitance

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STB60NE06L-16

ELECTRICAL CHARACTERISTICS (continued)


SWITCHING ON
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t d(on) Turn-on Time V DD = 25 V ID = 30 A 35 50 ns
tr Rise Time R G =4.7 V GS = 5 V 270 370 ns

Qg Total Gate Charge V DD = 40 V I D = 60 A V GS = 5 V 70 100 nC


Q gs Gate-Source Charge 20 nC
Q gd Gate-Drain Charge 45 nC

SWITCHING OFF
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
t r(Vof f) Off-voltage Rise Time V DD = 40 V I D = 60 A 45 65 ns
tf Fall Time R G =4.7 VGS = 5 V 220 300 ns
tc Cross-over Time 280 390 ns

SOURCE DRAIN DIODE


Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I SD Source-drain Current 60 A
I SDM () Source-drain Current 240 A
(pulsed)
V SD () Forward On Voltage I SD = 60 A V GS = 0 1.5 V
t rr Reverse Recovery I SD = 60 A di/dt = 100 A/s 120 ns
o
Time V DD = 20 V Tj = 150 C
Q rr Reverse Recovery 0.4 nC
Charge
I RRM Reverse Recovery 6 A
Current
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
() Pulse width limited by safe operating area

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STB60NE06L-16

TO-263 (D2PAK) MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.3 4.6 0.169 0.181

A1 2.49 2.69 0.098 0.106

B 0.7 0.93 0.027 0.036

B2 1.25 1.4 0.049 0.055

C 0.45 0.6 0.017 0.023

C2 1.21 1.36 0.047 0.053

D 8.95 9.35 0.352 0.368

E 10 10.28 0.393 0.404

G 4.88 5.28 0.192 0.208

L 15 15.85 0.590 0.624

L2 1.27 1.4 0.050 0.055

L3 1.4 1.75 0.055 0.068

E A

C2

L2

D
L

L3

B2 A1

B C

G
P011P6/C

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STB60NE06L-16

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics.
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1998 STMicroelectronics Printed in Italy All Rights Reserved


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