«) United States US 2016038001641 «2 Patent Application Publication (10) Pub. No.: US 2016/0380016 Al KUSAKA. (4) BACKSIDE ILLUMINATION IMAGE SENSOR AND IMAGE-CAPTURING DEVICI (71) Applicant: NIKON CORPORATION, Tokyo (JP) (72) Inventor: Yosuke KU AKA, Yokohama-shi (JP) (73) Assignee: NIKON CORPORATION, Tokyo (JP) (21) Appl. No. 187260,994 (22) Filed: Sep. 9, 2016 Related U.S. Application Data (63) Continuation of application No, 14/877,439, fled on et. 7, 2015, naw Pat, No, 9.456.633, which is a continuation of application No, 14/555,868, filed on Nov. 28, 2014, now Pat. No, 9,184,197, which is a continuation of application No. 13/033,187, filed on Feb, 23, 2011, now Pat. No. 8,928,795. 60) Foreign Application Priority Data Feb. 28, 2010 (UP) 2010-040378 Publication Classification (1) Ie ch, HOM 27/146 2006.01) MOAN 5378 (2006.01), (43) Pub. Date: Dec. 29, 2016 MOAN 5232 (2006.01), HON 9369. (2006.01), (2) US.Ch CPC... HOLL 27/14627 (201301), HOM 27/1464 (2013.01); HOLL 27/1462 201301); HOLL 27/14608 (2013.01); HOLL 27/14623 (2013.01); HOLL 27/14621 (201301); HOLL 27AMGAS (2013.01); HOAN 73696 (2013.01) HOAN 5/378 (2013.01); HOIN 5723293 (2013.01) on ABSTRACT A backside ilumination image sensor that includes a sem ‘condvetor substrate witha plurality of photoelectric conver sion elements and 2 read circuit formed on a foat surface side ofthe semiconductor substrate, and captures an imoge by outputting, via the read circuit, electrical signals ge ated as incident light having reached a back suzface side of the semiconductor substrate is rveived a the photoelectric conversion elements includes: light shielding film formed fon a side where incident light eaters the photoelectric conversion elements, with an opening formed therein in correspondence to eich photoelectric conversion element, and an on-chip lens formed ata position set apart fom the Tight shielding film by # predetermined distane in corre- spondence to eech photoelectric conversion element, The Hight shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation wo each other with regard to the on-chip lens.Patent Application Publication Dec. 29, 2016 Sheet 1 of 20 US 2016/0380016 AI FIG.1 215 216 947 ee 204 | L le ie | 212 ale 213 aa a 2068 202 a 203 201Patent Application Publication Dec. 29, 2016 Sheet 2 of 20 US 2016/0380016 AI FIG.2US 2016/0380016 A1 Dec. 29,2016 Sheet 3 of 20 Patent Application Publication FIG.3 212 314 313 310 jj L ‘ll alLol | ol|{ol[[al[ el |Lel|o}|LolL_o} Lal {Lol dla all ol elfelle)eltelCell loll «lf ell xl (a) llall alae) fe) [ell olf alllal|(all oll elf ello) fal alellelallelfel fell ollall alle] Cellelfell =e allalllallallel{o) [el Calf allel Lol[_olf olf ol ola (ell Cello) allel clfelel Lele Lal [ol ol Lol altel Coll olf olf al lel all oll «ll allel oll ol Lela dtellallalelfall elfalallallelfol «lel ella OG 0 | Uo | Ol | 0D [00 | oi alfllel[ellellallal fd ella elLe [allCelfalf elf allel olfolf ol Cel Calf olf olf olf ol (elf Ce) Celle Lol [el fale) [el La tele af alllal {al el fal [el{ ol ollal loll sl fell oll oll ol (elfelf=lfellel fa fellollelLel elle fel GOEL EGId Gebel (eltdlfeltallelLellelLallell ell elLolLellel fellaUS 2016/0380016 A1 Dec. 29,2016 Sheet 4 of 20 Patent Application Publication FIG.4Patent Application Publication Dec. 29, 2016 Sheet 5 of 20 US 2016/0380016 AI FIG.5 310Patent Application Publication Dec. 29, 2016 Sheet 6 of 20 US 2016/0380016 AI FIG.6A FIG.6CPatent Application Publication Dec. 29, 2016 Sheet 7 of 20 US 2016/0380016 AI FIG.7 403(310) 403(310) 3 eat J 7 412) 408 ais Pre Oi? poss 413. “ Shs mS Ra &Patent Application Publication Dec. 29, 2016 Sheet 8 of 20 US 2016/0380016 AI FIG.8 403(318) 403(314) —_——* / \V ) 402 404 ~ ree nt 401 P. aa P SS — 484)Patent Application Publication Dec. 29, 2016 Sheet 9 of 20 US 2016/0380016 AI FIG.9Patent Application Publication FIG.10 90 Dec. 29, 2016 Sheet 10 of 20 i N YY NES US 2016/0380016 A1 iS v3 a4 SearPatent Application Publication Dec. 29, 2016 Sheet 11 of 20 US 2016/0380016 AI FIG.11Patent Application Publication Dec. 29, 2016 Sheet 12 of 20 US 2016/0380016 AI FIG.12Patent Application Publication Dec. 29, 2016 Sheet 13 of 20 US 2016/0380016 AI FIG.13Patent Application Publication Dec. 29, 2016 Sheet 14 of 20 US 2016/0380016 AI 403(310) 403(310) soothe nt 401 anPatent Application Publication Dec. 29, 2016 Sheet 15 of 20 US 2016/0380016 AI 403(313) 403(314) 409 ao et ith | os 47US 2016/0380016 AL Dec. 29,2016 Sheet 16 of 20 Patent Application Publication FIG.16 212 33 32 JECECEPECEEEEEEE FIER EGEREEEE PEGE RERES EEE ZIGGIES ESECEBEEES I AICERECEEEEEEESE FEES EPEGEEELR JERE GEEEEEEEE IEEE SE EEEEL BEL EREEEEEEEEE 7 FIEIGEGESEREEEL SIEPEEECESBEREERE TIF EEEGEEEEEE IEEE SEEEEEEE CSS SeE SSE CECEE EERE EIS ESEEEREEEEEGEPatent Application Publication Dec. 29, 2016 Sheet 17 of 20 US 2016/0380016 AI FIG.17A 23 10 3 24 FIG.17B 25 10 ] 312 26 LoUS 2016/0380016 A1 Dec. 29,2016 Sheet 18 of 20 Patent Application Publication FIG.18 212 Peele =e] =] ol [ell oll ello) [el (el el LellellC o) Celfelt=lCel[el(el=]al=lCo flaca oi Colello [ell oll ell] el elle c alfelfal|Cellaltel|-all-ell = olf el[ell a [fel allel fell elltelell el ell-el(=](el lel @ EEE ee = Le} el (ello el Col Cell ele ellelico a al elf-=l{(ell(=l ol (=llall=l ell Cell a] aa elelelelelelelelfellelfa g allele z Flee g aff elf =I elf =lf 6} [l|[ 2] =] elle Cella | Cele eee elle o] alelfalf ell) alfel lalla Ee rslteltelt= relcelfel fll elf =Ilel Ella)Patent Application Publication Dec. 29, 2016 Sheet 19 of 20 US 2016/0380016 AI FIG.19 403(310) 403(310) a 10 408 404 ~ 47Patent Application Publication Dec. 29, 2016 Sheet 20 of 20 US 2016/0380016 AI 403(311) 403(311) x a S 401 414 eMieR| H P 412 ais ay c 413 ~ 481 492 | 4 E423 7“? — 484US 2016/0380016 Al BACKSIDE ILLUMINATION IMAGE SENSOR AND IMAGE-CAPTURING DEVICE INCORPORATION BY REFERENCE 0001] This is » Continuation of application See. No, 14/877,439 fled Oct. 7, 2015, which in tur isa Continue ation of application Ser. No. 14/585 868 filed Nov. 28, 2014, Which in tum is a Continuation of application Ser. No, 13/033,187 filed Feb. 23, 2011, which claims the benefit of Japanese Application No, 2010-040878 filed Feb. 25,2010, “The disclosure ofthe prior applications is hereby incorpo- rato by rofeonce herein in is entirety BACKGROUND OF THE INVENTION [0002] 1. Field of the Invention 10003]. The present invention relates to a backside ilumi- ‘ation image sensor and an image-capturing device 0004] 2. Description of Related Art [0005] The performance ofan image sensor at low bright- ress is offen improved by foeming on-chip lenses, each in correspondence to one of the photoelectric conversion cle~ ‘ments, and iluminating esch photoelectric conversion ele= ‘ment With condensod light. Te backside illumination image sensor disclosed in Japanese Laid Open Patent Publication No, 2009-164385 captures an image as signals generated ‘with light illuminating the back side of semiconductor substrate, which is received at photoelectric conversion clements disposed inthe semiconductor substrate re output ‘through a read cirenit formed on the front side of the semiconductor substrate. In order w reeive red-color light ‘with a significant wavelength at high efficiency, photoclec~ ‘tic conversion elements (photodiodes) formed to assure a thickness of approximately 10 ym are disposed at the Dockside illumination image sensor. The surface of each pholoeloctic conversion element and the corresponding ‘on-chip ens are set overa short distance from each other and the light having passed through the on-chip lens is con- D>P-ni(2(n-1). [011] Acconing to the 4b aspect of the present inven- tion in the backside illumination image sensor acconding 10 the Sed aspoc, its prefered that the radius of curvature over «periphery ofthe on-chip lens is greater than the ras of curvature ala central area of the on-chip lens [0012] According to the Sth aspect of the present inven- ‘ion, in the backside illumination image sensor aeeoning to the Ist aspoc, itis prefered thatthe plurality of photocle~ twic conversion elements inchde a pair of focus detection photoelectric conversion elements; and the pair of focus etecton photoelectric conversion elements generates a pair of focus detection signals pertaining to an image forming cconditioa forthe image forming optical system by roceiving pir of light foxes having passed through a pair of areas inthe image fomning optical system. [013] According tothe 6th aspect of the present iaven- tion in the backside illumination image sensor acconing 10 the Sih aspect, itis prefered that at least either first. ‘opening formed with an ost toward one side relative to a ‘optical axis ofthe on-chip lens, ora second opening fomied. with an offset toward aside opposite from the one side relative to the optical axis ofthe on-chip ens is formed as the opening inthe light shielding film; andthe pair of focus detection signals include an electrical signal generated by ‘one of the pair of focus detection photoelectric conversion elements by receiving one light flux in the pair of light ‘unes, which passes through the fist opening, and an clectrical signal generated by another focus detetion pho- toloctric conversion element in the pair of focus detection ‘photoelectric conversion elements by receiving another light ‘ux in the pair of ight uxes, which passes through theUS 2016/0380016 Al second opening, an the image forming coniton for he image foming optical system can be detected based upon a ple diftrence manifesta by the pir of focus detection Fiaals [001s] According to the 7th apet ofthe present inven- ‘ion inthe backside illminaton image sensor scoring 0 the Ist spc it is prefered that the backside iluination image sensor further comprises ight shielding member that prevents eaty of passing light, which is part f the ‘incident light that passes through the on-chip lens, into a plotckctrie conversion element corresponding fan aj ent on-chip lens acento the on-hip ens, among the pinay’ of photoelectric conversion element. The fight Shielding members disposed betwen the om chp lens and the Fa shicling fm [W015] According to the Sth pet ofthe present inven- ‘iin the backside lamination image ses according 0 the aspect itis prefered that th ih hiking member ise taermenbe disposed paral anopica ans of the on-chip leas nd an antvefetion film i Tome a Sorfice of he barrie member 038 fo prevent eistion of the posing it [W016] According to the Sth apt ofthe present inven- tion inthe backside illumination image sensor according o the Mhaspec itis prefer tha the ih sheling member Joss afi colori pos sor th on-chip es and a second color iter assuming color matching the color of theirs colori, which is spose near the opening; and a color of the light shielding member is different from a Color of it shielding member disposed in conjunction ‘with he adjoent on-chip lens aac othe on-chip. {W0I7] Accorig othe 1th aspect ofthe pest inven ‘in inthe backside lamination image sensor agcoding 0 the fat aps prefered that transparent mem i fll! betwen the on->elstance D, based upon a geometri-optes paraxial imaging condition DeRasn9) © [0098] _ Expression (2) below is obtained by assuming that ‘the medium present hereen the on-chip lens 10 and the exit pupil plane 90 i air, ie, refiactive index 00-1, in a further Approximation. DeRaint) ® [0099] The condition as defined in (3) is ascertained by ‘modifying expression 2) on the premise that the rai of ‘curvature Ris greater than half the size ofthe unit pixel area 403, i, half the pixel pitch P. The premise thatthe dius of curvature R is preter than half the pixel pitch P is set forth so as w increase the ight rveiving eliciency by climinating any deed zone in the photoelectric conversion clement 404 where no Hight is received Its to be noted that the curvature at the periphery ofthe on->radis of curvature R, SHD-ayP 6 {0103} Its assumed that P represents te pixel pitch and ‘that the smallest F number that is valid inthe interchange able lens system isthe brightest F number, i, FO. As long ‘asthe light beam having enteod the unit pixel area doesnot enter an adjacent unit pixel area (as ong as Pis greater than $8), the relationship expressed in expression (6) below, ‘obiained by using expression (2 for substitution with regard to the radius of curvature R and simplifying the resulting expression for D exists, bervPe [104] Accordingly, the distance D from the apex T ofthe ‘on-chip lens 10 othe plane at which the light shielding fm 307s disposed must be determined s0 as to satisfy the relationships defined in expressions (3) and (6). For instance, the average relratve index forthe on-chip lens 10 andthe mestium present between the on-chip leas 10 and the light shielding film 30, the pixel pitch Pand the smallest. F number FO may be respectively 1.5, 4 um and 14. In this. situation, as long as the distance D from the apex T ofthe ‘on-chip lens 10 to the plane at which the ight shielding fil 30 is disposed is sot within a range of 6 jm to 84 ym, a robust coujugate elation between the exit pupil plane 9 and the plane at which the light shielding fil 30 is disposed is assured and entry of stray light into the adjacent pixels can be ellectively prevented 10105] _ Expressions (1) tarongh 6) can be used even when plurality of different types of mea with varying refractive ines are present boticen the on-chip ens 10 and the light shielding film 30. Namely, under such circumstances, expressions (1) through (6) can be used by assuming an average reffetive index for the on-chip lens 10 and the ‘media present between the on-chip lens 10 and the light shielding film 30. In addition, expressions (1) through (6) can be used even when the on-chip lens 10 is constituted ‘with a plurality of leases, eg, even when an inner leas is added, by approximating the lens function as that ofa single Tens [0106] As described earlier, while the curvature is set ‘more gradval at the periphery of the on-chip lens 1, stray ‘ight ateibutable to multiple reflection, hich tends to occur readily atte four coeners ofthe pixel locatod atthe ends of the diagonals where the lens surface slopes more acutely. FIG. 13 shows light shielding members 66 disposed atthe four comers of exch on-chip lens in order to prevent such stray light. The light shielding members 66 may be light absorbing members fling the valleys in the on-chip lens array made up with the plurality of on-chip lenses 10, or they ‘may be light absorbing members disposed at positions corresponding to those of the colo filters 9 ia FIG. 7 aod the “white-olor filters 7 in FIG. 8. The light absorbing members ‘may be constituted with, for instance, blck-colo filters, [0107] Inthe embodiment desribed abave, a plane con- jugate with the exit pupil plane 90 of the image forming ‘optical systom,rolative to the on-chip lens 10, can be set further fontward relative to the photoelectric conversion lemat 404 and light entering the photoelectric conversion clement 404 is restricted atthe opening 11,13 or 14 located athe conjugate plane. AS a result, the linear relationship ‘between the aperture F number and the signal level ean be Dee. 29, 2016 kept intact with ease and unnecessary entry of oblique light {nto an adjacent piel can also be prevented with ease [0108] The stocture adopted in backside illumination image sensor in the related a, in which the plane conjugate with the pupil is set within the photoelectric conversion clemeats, is not compatible with focus detection pixels engaged in focus detetion through the split pupil phase detection method, since openings for spliting the pupil ‘cannot be formed atthe plane, In contrat, according tothe present invention described shove in reference 10 the crsbodiment, the plane conjugate with the exit pupil plane 90 of the image forming optical system relative to the ‘on-chip lenses 10 can be positioned further fontwand rela: tive to the photoelectric conversion elements 404, which ‘makes it posible to form the openings H, 13 and 14 for spliting the pupil atthe conjugate plane. Furthermore, by setting the distance D between the on-chip lenses 10 andthe Tight shielding film 30 so as to satisfy specifi quirements, focus detection pixels to be engaged in focus detection through the spit pupil phase detection method, which are compatible witha backside illumination image sensor, and also assure a high level of accuracy, canbe achieved while, atthe same time, minimizing the adverse effects of stray light ‘Other Embodiments ofthe Invention (1) Embodiment in which Entry of Light into ‘Adjacent Pixels is Prevented Via Poatizers [0109] FIGS. 7 and 8 show the barriers 8, exch disposed at the boundary of a unit pixel area 403 to funtion as alight shielding member ranging slong the direction parallel othe ‘on-chip lens axis and extending fom te ight shielding film 30/10 the on-chip lens 1, The entry of light into adjacent ‘unit pel areas 408 may he preveated by adopting altema- tive measures. [0110] FIGS. 14 through 16 present an example of light shielding measuees taken by ulizng polarizers. FIG. 14 is 4 schematic sectional view of image-capturing pixels 310, disposed near the optical axis ofthe image forming optical system in backside ilumination image sensor achieved in the embodiment, in which the entry of light into adjuceat pixels is prevented by polarizers. Since the strctural ele- ‘ments disposed at positions lower than the light shielding film 30 among the sirctural elements in FIG. 14 are identical to those in FIG. 7, ther explanation isnot provided. Polarizers H32 and polarizers V33, to function as light shielding members, are disposed at the image-capturing pinels 310 shown in FIG. 14, in place ofthe barers 8 shown, in FIG. 7. A transparent insulating flm 31 embeds the polarizers H32 and V33 located dirwely above the light shielding film 30 and the color filters 9. In ation, the ‘ranspareat insulating film 31 also embeds the space ‘between the light shielding film 30 ad the polarizers 132 and V33 and the space between the light shielding film 30, ‘and the back surface 408 of the single erytl silicon layer 40, [0111] The polarizers H32 and the polarizers V3, which ‘may be, for instance, photonic erystal polarizers configured in an array suchas those disclosed in Intemational Publi- cation No, 2004008196, polarize light along polarizing dictions perpendicular to each other. The polarizers H32 ad V3 are formed on a substrate with eyelial columns of ‘minute grooves formed thereupon by altemately laminatingUS 2016/0380016 Al 4 material wit a highreftative index such as Sior Ta and 4 material witha low refractive index such as SiO, over snuliple layers upon the substrate, wi a reiterating patter of indentations/projetions formed in each layer [0112] FIG. 14 shows swo polarizers 132, one disposed between the on-chip lens 10 ofthe right-hand side image- capturing pixel 310 and the corresponding color filter and te ater disposed at a position directly in font ofthe ight shielding fim 30, It also shows two polarizers V33, one D>P nil), 5. A backside illumination image sensor according 0 claim 4, wherein the radius of curvature over a periphery ofthe on-chip Tens i rete than the radius of curvature at ental anea ofthe onchip lens, 6. Abackside illumination image sensor, comprising 8 plurality of pairs of photoelectric conversion elements each incloding a pair of light receiving areas that receive incident light having entered aback surface of a Semiconductor substrate through an image forming optical sytem, a read circuit being formed on a font surfoce of the Semivonductor substrate: anon-chip lens formed aa postion set part from the pair of light receiving ares by a predetermined distance; a first separating area that is constituted witha type of semionduetor and that separates unit pixel areas from each other, each of the unit pixel areas including each pair of photoelectric conversion elements; and 1 second separating are that is eoatited with the type of semiconductor and that forms a boundary between te each pair of photoelectic conversion elements, whecein: a radius of curvature R of the on-chip lens, a distance D fom an apex of the on-chip lens to the pair of Fight receiving areas and an average refractive index n of a ‘medium present between the on-chip lens and the pai flight rosiving areas ahievea relationship expressed as; D-Rein-1). 7. backside illumination image sensor according 1 lai 6, wherein: the plurality of pairs of photoelectric conversion elements ae disposed ina two-dimensional grid aay; and a pitch P of the two-dimensional grid ara, a smallest F number FO of an exit pupil of the image forming optical system andthe distance D achieve relationship expressed as; FO-Pn>D>Pal(2(0-) 8. A backside illumination image sensor according 10 lim 7, wherein the rads of curvature over a periphery ofthe on-chip Tenis greater than the radius of eurvatre at ental sea ofthe onship lens. 9. A backside illumination image sensor according 9 aim 6, further comprising: a light shielding member that is disposed between the ‘on-chip lens and the pair of light receiving areas and that includes a frst color filter disposed near the ‘on-chip lens anda second coor fteressuming a color matching the color of the first color fier, which is Aisposed near the pair of ight receiving areas, wherein: the color ofthe fst color filters dferent from a color af the second olor filer disposed in conjuntion with an aljacent on-chip lens adjacent to the on-chip lens.US 2016/0380016 Al Dec. 29, 2016 13 10. A backside illamination image sensor according to claim 6, further comprising: 4 light shielding member that is disposed between the ‘onchip len and the pair of light receiving areas and that inches fst polarizer disposed ear the on-Chip leas and a second polarizer assuming 9 polarizing ‘rection marching the polarizing direction of the fist polarizee, which is disposed near the paie of light receiving ares, wherein: the polarizing direction of the fst polarizer i perpesicular toa polarizing direction of the second polarizer disposed in conjunction with an adjacent on-chip leas adjacent to the ‘on-chip lens