Order this document by MC1496/D

 

  
BALANCED


MODULATORS/DEMODULATORS
These devices were designed for use where the output voltage is a
product of an input voltage (signal) and a switching function (carrier). Typical SEMICONDUCTOR
applications include suppressed carrier and amplitude modulation, TECHNICAL DATA
synchronous detection, FM detection, phase detection, and chopper
applications. See Motorola Application Note AN531 for additional design
information.
Excellent Carrier Suppression 65 dB typ @ 0.5 MHz D SUFFIX
Excellent Carrier Suppression 50 dB typ @ 10 MHz PLASTIC PACKAGE
CASE 751A
Adjustable Gain and Signal Handling 14 (SO14)
Balanced Inputs and Outputs 1
High Common Mode Rejection 85 dB typical
P SUFFIX
This device contains 8 active transistors. PLASTIC PACKAGE 14
CASE 646
1

PIN CONNECTIONS

Signal Input 1 14 VEE

Figure 1. Suppressed Gain Adjust 2 13 N/C
Carrier Output
Waveform Gain Adjust 3 12 Output
Signal Input 4 11 N/C

IC = 500 kHz, IS = 1.0 kHz Bias 5 10 Carrier Input

Output 6 9 N/C
N/C 7 8 Input Carrier
0

IC = 500 kHz ORDERING INFORMATION

IS = 1.0 kHz
Log Scale Id

Operating
20 Device Temperature Range Package
Figure 2. Suppressed
Carrier Spectrum MC1496D SO14
TA = 0C to +70C
MC1496P Plastic DIP
40 MC1496BP TA = 40C to +125C Plastic DIP
60
499 kHz 500 kHz 501 kHz

Figure 4. AmplitudeModulation Spectrum

10
IC = 500 kHz
8.0 IS = 1.0 kHz
Linear Scale

6.0
Figure 3. Amplitude
Modulation Output 4.0
Waveform
2.0

IC = 500 kHz 0
IS = 1.0 kHz 499 kHz 500 kHz 501 kHz

Motorola, Inc. 1996 Rev 4

MOTOROLA ANALOG IC DEVICE DATA 1
 MC1496, B

MAXIMUM RATINGS (TA = 25C, unless otherwise noted.)

Rating Symbol Value Unit
Applied Voltage V 30 Vdc
(V6 V8, V10 V1, V12 V8, V12 V10, V8 V4,
V8 V1, V10 V4, V6 V10, V2 V5, V3 V5)
Differential Input Signal V8 V10 +5.0 Vdc
V4 V1 (5 + I5Re)
Maximum Bias Current I5 10 mA
Thermal Resistance, JunctiontoAir RJA 100 C/W
Plastic Dual InLine Package
Operating Temperature Range TA 0 to +70 C
Storage Temperature Range Tstg 65 to +150 C
NOTE: ESD data available upon request.

ELECTRICAL CHARACTERISTICS (VCC = 12 Vdc, VEE = 8.0 Vdc, I5 = 1.0 mAdc, RL = 3.9 k, Re = 1.0 k, TA = Tlow to Thigh,
all input and output characteristics are singleended, unless otherwise noted.)
Characteristic Fig. Note Symbol Min Typ Max Unit
Carrier Feedthrough 5 1 VCFT Vrms
VC = 60 mVrms sine wave and fC = 1.0 kHz 40
offset adjusted to zero fC = 10 MHz 140
VC = 300 mVpp square wave: mVrms
offset adjusted to zero fC = 1.0 kHz 0.04 0.4
offset not adjusted fC = 1.0 kHz 20 200
Carrier Suppression 5 2 VCS dB
fS = 10 kHz, 300 mVrms
fC = 500 kHz, 60 mVrms sine wave 40 65
fC = 10 MHz, 60 mVrms sine wave 50 k
Transadmittance Bandwidth (Magnitude) (RL = 50 ) 8 8 BW3dB MHz
Carrier Input Port, VC = 60 mVrms sine wave 300
fS = 1.0 kHz, 300 mVrms sine wave
Signal Input Port, VS = 300 mVrms sine wave 80
|VC| = 0.5 Vdc
Signal Gain (VS = 100 mVrms, f = 1.0 kHz; | VC|= 0.5 Vdc) 10 3 AVS 2.5 3.5 V/V
SingleEnded Input Impedance, Signal Port, f = 5.0 MHz 6
Parallel Input Resistance rip 200 k
Parallel Input Capacitance cip 2.0 pF
SingleEnded Output Impedance, f = 10 MHz 6
Parallel Output Resistance rop 40 k
Parallel Output Capacitance coo 5.0 pF
Input Bias Current 7 A

I
bS
+ I1 )2 I4 ; I
bC
+ I8 )2 I10 IbS
IbC


12
12
30
30

Input Offset Current 7 A

IioS = I1I4; IioC = I8I10 IioS 0.7 7.0
IioC 0.7 7.0
Average Temperature Coefficient of Input Offset Current 7 TCIio 2.0 nA/C
(TA = 55C to +125C)
Output Offset Current (I6I9) 7 Ioo 14 80 A
Average Temperature Coefficient of Output Offset Current 7 TCIoo 90 nA/C
(TA = 55C to +125C)
CommonMode Input Swing, Signal Port, fS = 1.0 kHz 9 4 CMV 5.0 Vpp
CommonMode Gain, Signal Port, fS = 1.0 kHz, |VC|= 0.5 Vdc 9 ACM 85 dB
CommonMode Quiescent Output Voltage (Pin 6 or Pin 9) 10 Vout 8.0 Vpp
Differential Output Voltage Swing Capability 10 Vout 8.0 Vpp
Power Supply Current I6 +I12 7 6 ICC 2.0 4.0 mAdc
Power Supply Current I14 IEE 3.0 5.0
DC Power Dissipation 7 5 PD 33 mW

2 MOTOROLA ANALOG IC DEVICE DATA

 MC1496, B

GENERAL OPERATING INFORMATION

Carrier Feedthrough switching devices. This swing is variable depending on the
Carrier feedthrough is defined as the output voltage at particular circuit and biasing conditions chosen.
carrier frequency with only the carrier applied (signal
Power Dissipation
voltage = 0).
Power dissipation, PD, within the integrated circuit package
Carrier null is achieved by balancing the currents in the
should be calculated as the summation of the voltagecurrent
differential amplifier by means of a bias trim potentiometer
products at each port, i.e. assuming V12 = V6, I5 = I6 = I12
(R1 of Figure 5).
and ignoring base current, PD = 2 I5 (V6 V14) + I5)
Carrier Suppression V5 V14 where subscripts refer to pin numbers.
Carrier suppression is defined as the ratio of each
Design Equations
sideband output to carrier output for the carrier and signal
The following is a partial list of design equations needed to
voltage levels specified.
operate the circuit with other supply voltages and input
Carrier suppression is very dependent on carrier input
conditions.
level, as shown in Figure 22. A low value of the carrier does
not fully switch the upper switching devices, and results in A. Operating Current
lower signal gain, hence lower carrier suppression. A higher The internal bias currents are set by the conditions at Pin 5.
than optimum carrier level results in unnecessary device and Assume:
I5 = I6 = I12,
circuit carrier feedthrough, which again degenerates the
suppression figure. The MC1496 has been characterized IB ttIC for all transistors
with a 60 mVrms sinewave carrier input signal. This level then :
provides optimum carrier suppression at carrier frequencies
in the vicinity of 500 kHz, and is generally recommended for R5 + ** *
V
I5
f 500 W where: R5 is the resistor between
where: Pin 5 and ground
balanced modulator applications. where: = 0.75 at TA = +25C
Carrier feedthrough is independent of signal level, VS. The MC1496 has been characterized for the condition
Thus carrier suppression can be maximized by operating I5 = 1.0 mA and is the generally recommended value.
with large signal levels. However, a linear operating mode
B. CommonMode Quiescent Output Voltage
must be maintained in the signalinput transistor pair or
harmonics of the modulating signal will be generated and V6 = V12 = V+ I5 RL
appear in the device output as spurious sidebands of the
Biasing
suppressed carrier. This requirement places an upper limit on
The MC1496 requires three dc bias voltage levels which
inputsignal amplitude (see Figure 20). Note also that an
must be set externally. Guidelines for setting up these three
optimum carrier level is recommended in Figure 22 for good
levels include maintaining at least 2.0 V collectorbase bias
carrier suppression and minimum spurious sideband
on all transistors while not exceeding the voltages given in
generation.
the absolute maximum rating table;
At higher frequencies circuit layout is very important in
30 Vdc w
[(V6, V12) (V8, V10)] w 2 Vdc
order to minimize carrier feedthrough. Shielding may be
30 Vdc w
[(V8, V10) (V1, V4)] w 2.7 Vdc
necessary in order to prevent capacitive coupling between
the carrier input leads and the output leads.
30 Vdc w
[(V1, V4) (V5)] w2.7 Vdc
The foregoing conditions are based on the following
Signal Gain and Maximum Input Level approximations:
Signal gain (singleended) at low frequencies is defined
V6 = V12, V8 = V10, V1 = V4
as the voltage gain,
Bias currents flowing into Pins 1, 4, 8 and 10 are transistor
A
VS
+ + )
Vo
V
R
L
R e 2r e
where r e +
26 mV
I5(mA)
base currents and can normally be neglected if external bias
S dividers are designed to carry 1.0 mA or more.
A constant dc potential is applied to the carrier input terminals Transadmittance Bandwidth
to fully switch two of the upper transistors on and two Carrier transadmittance bandwidth is the 3.0 dB bandwidth
transistors off (VC = 0.5 Vdc). This in effect forms a cascode of the device forward transadmittance as defined by:
differential amplifier.
Linear operation requires that the signal input be below a
critical value determined by RE and the bias current I5.
g21C +
i o (each sideband)
v s (signal) Vo + 0
VS p I5 RE (Volts peak) Signal transadmittance bandwidth is the 3.0 dB bandwidth
of the device forward transadmittance as defined by:

g21S + vos (signal) Vc + 0.5 Vdc, +0

Note that in the test circuit of Figure 10, VS corresponds to a i (signal)
maximum value of 1.0 V peak. Vo
Common Mode Swing
The commonmode swing is the voltage which may be
applied to both bases of the signal differential amplifier,
without saturating the current sources or without saturating
the differential amplifier itself by swinging it into the upper

MOTOROLA ANALOG IC DEVICE DATA 3

 MC1496, B

Coupling and Bypass Capacitors Signal Port Stability

Capacitors C1 and C2 (Figure 5) should be selected for a Under certain values of driving source impedance,
reactance of less than 5.0 at the carrier frequency. oscillation may occur. In this event, an RC suppression
network should be connected directly to each input using
Output Signal
short leads. This will reduce the Q of the sourcetuned
The output signal is taken from Pins 6 and 12 either circuits that cause the oscillation.
balanced or singleended. Figure 11 shows the output levels
Signal Input
of each of the two output sidebands resulting from variations (Pins 1 and 4)
in both the carrier and modulating signal inputs with a 510
singleended output connection. 10 pF

Negative Supply
VEE should be dc only. The insertion of an RF choke in
An alternate method for lowfrequency applications is to
series with VEE can enhance the stability of the internal
insert a 1.0 k resistor in series with the input (Pins 1, 4). In
current sources.
this case input current drift may cause serious degradation of
carrier suppression.

TEST CIRCUITS
Figure 5. Carrier Rejection and Suppression Figure 6. InputOutput Impedance
VCC
12 Vdc Re = 1.0 k
1.0 k 1.0 k
Re 2 3
RL RL 0.5 V 8
51 C1
1.0 k 3.9 k 3.9 k + 10
C2 0.1 F 2 3 + Vo
Carrier 8 1 MC1496 6 Zout
Input 0.1 F 10 I9 I6 Zin 4 Vo
VC + Vo 12
1 MC1496 6
VS Vo 14 5
Modulating 4 12
Signal Input 14 5 6.8 k
10 k 10 k 51 51
50 k I5 6.8 k
I10 8.0 Vdc
R1 V
Carrier Null
8.0 Vdc NOTE: Shielding of input and output leads may be needed
VEE to properly perform these tests.

Figure 7. Bias and Offset Currents Figure 8. Transconductance Bandwidth

VCC VCC
12 Vdc 1.0 k 1.0 k 12 Vdc

Re = 1.0 k Re 2.0 k
1.0 k 51 0.1 F 1.0 k 0.01
2 3 Carrier 2 3 F
2.0 k 8 50 50
I7 8 I6 Input 0.1 F
I8 10 10 + Vo
VC
1.0 k 6 1 MC1496 6
I1 1 MC1496 I9 VS
4 Vo
I4 4 Modulating 12
12
Signal Input 5
14 5 10 k 10 k 51 51 14
I10 50 k 6.8 k
6.8 k
V
Carrier Null
8.0 Vdc 8.0 Vdc
VEE VEE

4 MOTOROLA ANALOG IC DEVICE DATA

 MC1496, B
Figure 9. Common Mode Gain Figure 10. Signal Gain and Output Swing
VCC VCC
12 Vdc 12 Vdc
Re = 1.0 k Re = 1.0 k
1.0 k 1.0 k
3.9 k 3.9 k 3.9 k 3.9 k
0.5 V 8 2 3 0.5 V 2 3
1.0 k 8
+ 10 + 10
1.0 k + Vo + Vo
1 MC1496 6 1 MC1496 6
VS 4 Vo VS Vo
12 4 12
14 5 14 5
50
6.8 k I5 =
50 6.8 k
1.0 mA
8.0 Vdc
A
CM
+ V
20 log o
V
S 8.0 Vdc
VEE
VEE

TYPICAL CHARACTERISTICS
Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),
VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25C, unless otherwise noted.

Figure 11. Sideband Output versus Figure 12. SignalPort ParallelEquivalent

VO , OUTPUT AMPLITUDE OF EACH SIDEBAND (Vrms)

Carrier Levels Input Resistance versus Frequency

2.0 1.0 M
rip, PARALLEL INPUT RESISTANCE (k ) 500
1.6 +rip

rip
Signal Input = 600 mV 100
1.2
50
400 mV
0.8
300 mV 10
200 mV 5.0
0.4
100 mV

0 1.0
0 50 100 150 200 1.0 5.0 10 50 100
VC, CARRIER LEVEL (mVrms) f, FREQUENCY (MHz)

Figure 13. SignalPort ParallelEquivalent Figure 14. SingleEnded Output Impedance

Input Capacitance versus Frequency versus Frequency

cop, PARALLEL OUTPUT CAPACITANCE (pF)

cip , PARALLEL INPUT CAPACITANCE (pF)

5.0 140 14
rop , PARALLEL OUTPUT RESISTANCE (k )

120 12
4.0
100 10
3.0 rop
80 8.0

2.0 60 cop 6.0

40 4.0
1.0
20 2.0
0 0 0
1.0 2.0 5.0 10 20 50 100 0 1.0 10 100
f, FREQUENCY (MHz) f, FREQUENCY (MHz)

MOTOROLA ANALOG IC DEVICE DATA 5

 MC1496, B
TYPICAL CHARACTERISTICS (continued)
Typical characteristics were obtained with circuit shown in Figure 5, fC = 500 kHz (sine wave),
VC = 60 mVrms, fS = 1.0 kHz, VS = 300 mVrms, TA = 25C, unless otherwise noted.

Figure 15. Sideband and Signal Port Figure 16. Carrier Suppression
Transadmittances versus Frequency versus Temperature
1.0 0
21, TRANSADMITTANCE (mmho)

0.9 Signal Port

VCS, CARRIER SUPPRESION (dB)

10
0.8
0.7 20
0.6 Side Band MC1496
30
0.5 Sideband Transadmittance (70C)

+ +
I out (Each Sideband) 40
0.4 g21 V out 0
V (Signal)
0.3 in
50
0.2 Signal Port Transadmittance
+ + +
I out 60
0.1 g21 V out 0 |V | 0.5 Vdc
V C
in 70
0
0.1 1.0 10 100 1000 75 50 25 0 25 50 75 100 125 150 175
fC, CARRIER FREQUENCY (MHz) TA, AMBIENT TEMPERATURE
(C)

Figure 18. Carrier Suppression

Figure 17. SignalPort Frequency Response versus Frequency
0
SUPPRESSION BELOW EACH FUNDAMENTAL
20
AVS , SINGLE-ENDED VOLTAGE GAIN (dB)

RL = 3.9 k
Re = 500 10
10
CARRIER SIDEBAND (dB)

20
RL = 3.9 k (Standard
0 Re = 1.0 k Test Circuit) RL = 3.9 k 30 2fC
Re = 2.0 k
10 40
RL = 500
|VC| = 0.5 Vdc Re = 1.0 k 50
20 fC
A
V
+ Re ) 2re
R
L 60 3fC
30 70
0.01 0.1 1.0 10 100 0.05 0.1 0.5 1.0 5.0 10 50
f, FREQUENCY (MHz) fC, CARRIER FREQUENCY (MHz)

Figure 19. Carrier Feedthrough Figure 20. Sideband Harmonic Suppression

versus Frequency versus Input Signal Level
VCFT , CARRIER OUTPUT VOLTAGE (mVrms)

SUPPRESSION BELOW EACH FUNDAMENTAL

10 0

10
CARRIER SIDEBAND (dB)

20
1.0
30

40
fC 3fS
50
0.1
60 fC 2fS
70
0.01 80
0.05 0.1 0.5 1.0 5.0 10 50 0 200 400 600 800
fC, CARRIER FREQUENCY (MHz) VS, INPUT SIGNAL AMPLITUDE (mVrms)

6 MOTOROLA ANALOG IC DEVICE DATA

 MC1496, B

Figure 21. Suppression of Carrier Harmonic Figure 22. Carrier Suppression versus
Sidebands versus Carrier Frequency Carrier Input Level
SUPPRESSION BELOW EACH FUNDAMENTAL

0 0

V CS , CARRIER SUPPRESSION (dB)

10 10
3fC fS
CARRIER SIDEBAND (dB)

20 20

30 30 fC = 10 MHz
2fC fS
40 40

50 2fC 2fS 50
fC = 500 kHz

60 60

70 70
0.05 0.1 0.5 1.0 5.0 10 50 0 100 200 300 400 500
fC, CARRIER FREQUENCY (MHz) VC, CARRIER INPUT LEVEL (mVrms)

OPERATIONS INFORMATION
The MC1496, a monolithic balanced modulator circuit, is and have an amplitude which is a function of the product of
shown in Figure 23. the input signal amplitudes.
This circuit consists of an upper quad differential amplifier For highlevel operation at the carrier input port and linear
driven by a standard differential amplifier with dual current operation at the modulating signal port, the output signal will
sources. The output collectors are crosscoupled so that contain sum and difference frequency components of the
fullwave balanced multiplication of the two input voltages modulating signal frequency and the fundamental and odd
occurs. That is, the output signal is a constant times the harmonics of the carrier frequency. The output amplitude will
product of the two input signals. be a constant times the modulating signal amplitude. Any
Mathematical analysis of linear ac signal multiplication amplitude variations in the carrier signal will not appear in the
indicates that the output spectrum will consist of only the sum output.
and difference of the two input frequencies. Thus, the device The linear signal handling capabilities of a differential
may be used as a balanced modulator, doubly balanced mixer, amplifier are well defined. With no emitter degeneration, the
product detector, frequency doubler, and other applications maximum input voltage for linear operation is approximately
requiring these particular output signal characteristics. 25 mV peak. Since the upper differential amplifier has its
The lower differential amplifier has its emitters connected emitters internally connected, this voltage applies to the
to the package pins so that an external emitter resistance carrier input port for all conditions.
may be used. Also, external load resistors are employed at Since the lower differential amplifier has provisions for an
the device output. external emitter resistance, its linear signal handling range
may be adjusted by the user. The maximum input voltage for
Signal Levels
linear operation may be approximated from the following
The upper quad differential amplifier may be operated expression:
either in a linear or a saturated mode. The lower differential V = (I5) (RE) volts peak.
amplifier is operated in a linear mode for most applications. This expression may be used to compute the minimum
For lowlevel operation at both input ports, the output value of RE for a given input voltage amplitude.
signal will contain sum and difference frequency components

Figure 23. Circuit Schematic Figure 24. Typical Modulator Circuit

() 12
Vo, 1.0 k 1.0 k 12 Vdc
Output
(+) 6 0.1 F RL RL
2 Re 1.0 k 3
10 () 51 3.9 k 3.9 k
Carrier V 8
Input C V 0.1 F 10
+Vo
8 (+) Carrier C 6
Input 1 MC1496
4 () VS
Signal V 2 4
S 1 (+) Gain Modulating Vo
Input 12
Adjust Signal 10 k 10 k 51 51
3 Input 14 5
Bias 5 50 k
(Pin numbers I5 6.8 k
500 500 500 per G package)
Carrier Null 8.0 Vdc
VEE 14 VEE

MOTOROLA ANALOG IC DEVICE DATA 7

 MC1496, B

Figure 25. Voltage Gain and Output Frequencies

Carrier Input Signal (VC) Approximate Voltage Gain Output Signal Frequency(s)

R V
L C
Lowlevel dc
2(R
E
) 2re) KT
q
fM

R
) 2re
Highlevel dc L fM
R
E

R V (rms)
L C
Lowlevel ac

2 2 KT (R
q E
2r e) ) fC fM

0.637 R
) 2re
Highlevel ac L fC fM, 3fC fM, 5fC fM, . . .
R
E
NOTES: 1. Lowlevel Modulating Signal, VM, assumed in all cases. VC is Carrier Input Voltage.
2. When the output signal contains multiple frequencies, the gain expression given is for the output amplitude of
each of the two desired outputs, fC + fM and fC fM.
3. All gain expressions are for a singleended output. For a differential output connection, multiply each
expression by two.
4. RL = Load resistance.
5. RE = Emitter resistance between Pins 2 and 3.
6. re = Transistor dynamic emitter resistance, at 25C;

re [
26 mV
I5 (mA)
7. K = Boltzmanns Constant, T = temperature in degrees Kelvin, q = the charge on an electron.
KT
q [26 mV at room temperature

The gain from the modulating signal input port to the
output is the MC1496 gain parameter which is most often of
interest to the designer. This gain has significance only when
the lower differential amplifier is operated in a linear mode,
but this includes most applications of the device.
As previously mentioned, the upper quad differential
amplifier may be operated either in a linear or a saturated
mode. Approximate gain expressions have been developed
for the MC1496 for a lowlevel modulating signal input and
the following carrier input conditions:
1) Lowlevel dc
2) Highlevel dc
3) Lowlevel ac
4) Highlevel ac
These gains are summarized in Figure 25, along with the
frequency components contained in the output signal.
APPLICATIONS INFORMATION
Double sideband suppressed carrier modulation is the
basic application of the MC1496. The suggested circuit for
this application is shown on the front page of this data sheet.
In some applications, it may be necessary to operate the
MC1496 with a single dc supply voltage instead of dual
supplies. Figure 26 shows a balanced modulator designed
for operation with a single 12 Vdc supply. Performance of this
circuit is similar to that of the dual supply modulator.
AM Modulator
The circuit shown in Figure 27 may be used as an
amplitude modulator with a minor modification.
All that is required to shift from suppressed carrier to AM
operation is to adjust the carrier null potentiometer for the
proper amount of carrier insertion in the output signal.
However, the suppressed carrier null circuitry as shown in
Figure 27 does not have sufficient adjustment range.
Therefore, the modulator may be modified for AM operation
by changing two resistor values in the null circuit as shown in
Figure 28.
Product Detector
The MC1496 makes an excellent SSB product detector
(see Figure 29).
This product detector has a sensitivity of 3.0 microvolts
and a dynamic range of 90 dB when operating at an
intermediate frequency of 9.0 MHz.
The detector is broadband for the entire high frequency
range. For operation at very low intermediate frequencies
down to 50 kHz the 0.1 F capacitors on Pins 8 and 10
should be increased to 1.0 F. Also, the output filter at Pin 12
can be tailored to a specific intermediate frequency and audio
amplifier input impedance.
As in all applications of the MC1496, the emitter resistance
between Pins 2 and 3 may be increased or decreased to
adjust circuit gain, sensitivity, and dynamic range.
This circuit may also be used as an AM detector by
introducing carrier signal at the carrier input and an AM signal
at the SSB input.
The carrier signal may be derived from the intermediate
frequency signal or generated locally. The carrier signal may
be introduced with or without modulation, provided its level is
sufficiently high to saturate the upper quad differential

8 MOTOROLA ANALOG IC DEVICE DATA

 MC1496, B
amplifier. If the carrier signal is modulated, a 300 mVrms Figures 31 and 32 show a broadband frequency doubler
input level is recommended. and a tuned output very high frequency (VHF) doubler,
Doubly Balanced Mixer respectively.
The MC1496 may be used as a doubly balanced mixer Phase Detection and FM Detection
with either broadband or tuned narrow band input and output The MC1496 will function as a phase detector. Highlevel
networks. input signals are introduced at both inputs. When both inputs
The local oscillator signal is introduced at the carrier input are at the same frequency the MC1496 will deliver an output
port with a recommended amplitude of 100 mVrms. which is a function of the phase difference between the two
Figure 30 shows a mixer with a broadband input and a input signals.
tuned output. An FM detector may be constructed by using the phase
Frequency Doubler detector principle. A tuned circuit is added at one of the inputs
The MC1496 will operate as a frequency doubler by to cause the two input signals to vary in phase as a function
introducing the same frequency at both input ports. of frequency. The MC1496 will then provide an output which
is a function of the input signal frequency.

TYPICAL APPLICATIONS
Figure 26. Balanced Modulator
(12 Vdc Single Supply) Figure 27. Balanced ModulatorDemodulator
VCC
1.0 k 820 1.3 k 12 Vdc 1.0 k 1.0 k VCC
12 Vdc
RL
0.1 F 0.1 F 2 Re 1.0 k 3 3.9 k RL
3.0 k 3.0 k 51
25 F
+ 2 1.0 k 3 8 3.9 k
51 8 DSB VC 0.1 F 10 6
+Vo
15 V 0.1 F
Carrier Input 6 Carrier
10 0.1 F Output Input 1 MC1496
60 mVrms
1 MC1496 VS 4
Vo
Modulating 4 Modulating 12
+ Signal 10 k 10 k 51 51 14 5
12
Signal Input 10 F 25 F 14 5 Input 50 k
300 mVrms 15 V 15 V 10 k R1 I5 6.8 k
+ VEE
Carrier Carrier Null 8.0 Vdc
Null 50 k 10 k 10 k 100 100

Figure 29. Product Detector

Figure 28. AM Modulator Circuit (12 Vdc Single Supply)
VCC
VCC 820 1.3 k
1.0 k 1.0 k 12 Vdc
12 Vdc
RL 0.1 F
0.1 F 2 Re 1.0 k 3 3.9 k RL 1.0 k 100
51 2 3.0 k 3.0 k
3.9 k 3
8
VC 0.1 F
51 8
10 6 +Vo Carrier Input 0.1 F 6
Carrier 10 0.005
1 MC1496 300 mVrms F
Input 1 MC1496 AF
1.0 k 1.0 FOutput
VS 4
12 SSB Input 0.1 F 1.0 k 4
Modulating
Signal 750
Input
750 51 51 14 5
Vo
1.0 k
0.1
14 5
12 RLq 10 k
50 k
F 10 k
0.005 0.005
15 6.8 k F F
VEE
Carrier Adjust 8.0 Vdc

MOTOROLA ANALOG IC DEVICE DATA 9

 MC1496, B
Figure 30. Doubly Balanced Mixer
(Broadband Inputs, 9.0 MHz Tuned Output) Figure 31. LowFrequency Doubler
VCC
VCC 12 Vdc
1.0 k 1.0 k +8.0 Vdc
0.001 F 0.01 + 100 F
1.0 k
F RFC
25 Vdc 1.0 k
Local 2 3 2 3 3.9 k
Oscillator 100 H 8
51 8 1.0 k 3.9 k
Input 6 C2 100
10 10 6
100 mVrms 0.001 F 1 0.001 F
MC1496 100 F C2+ Output
RF Input 4 9.5 F 9.0 MHz Input 15 Vdc Max
MC1496
Output 15 mVrms 100 F 15 Vdc 1
10 k 12 L1
51 14 5 5.080 RL = 50 4 12
10 k 51
pF 90480 pF
50 k 14 5
6.8 k 10 k 10 k 100 100
Null Adjust VEE
8.0 Vdc 50 k
6.8 k
L1 = 44 Turns AWG No. 28 Enameled Wire, Wound I5
on Micrometals Type 446 Toroid Core.
Balance VEE
8.0 Vdc

Figure 32. 150 to 300 MHz Doubler

VCC
1.0 k 1.0 k V+ +8.0 Vdc

0.001
18 pF
F
0.001 RFC L1
100 F 0.68 H 18 nH
2 3 1.010 pF 300 MHz
8 6
Output
0.001 F 10 RL = 50
150 MHz 1 MC1496 1.010 pF
Input
4
10 k 12
100
10 k 100 14 5
50 k
6.8 k
L1 = 1 Turn AWG
No. 18 Wire, 7/32 ID
Balance VEE
8.0 Vdc
(fC f S )

(fC + f S )
AMPLITUDE

(2fC + 2f S )
(2fC 2f S )

(3fC + f S )
(3fC fS )
(2fC 2f S )

(2fC + 2f S )

(3fC + 2f S )
(3fC 2f S )
(fC 2f S )

(f + 2f )
S

(2fC )

(3f C )
(fC )

Frequency Balanced Modulator Spectrum

DEFINITIONS
fC Carrier Fundamental fC nfS Fundamental Carrier Sideband Harmonics
fS Modulating Signal nfC Carrier Harmonics
fC fS Fundamental Carrier Sidebands nfC nfS Carrier Harmonic Sidebands

10 MOTOROLA ANALOG IC DEVICE DATA

 MC1496, B

OUTLINE DIMENSIONS

D SUFFIX
PLASTIC PACKAGE
CASE 751A03
(SO14)
ISSUE F
NOTES:
A 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE
14 8 MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
B P 7 PL PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
1 7
0.25 (0.010) M B M PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
G R X 45 _ F MILLIMETERS INCHES
C DIM MIN MAX MIN MAX
A 8.55 8.75 0.337 0.344
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.054 0.068
T D 0.35 0.49 0.014 0.019
K M J F 0.40 1.25 0.016 0.049
SEATING D 14 PL G 1.27 BSC 0.050 BSC
PLANE
0.25 (0.010) M T B S A S J 0.19 0.25 0.008 0.009
K 0.10 0.25 0.004 0.009
M 0_ 7_ 0_ 7_
P 5.80 6.20 0.228 0.244
R 0.25 0.50 0.010 0.019

P SUFFIX
PLASTIC PACKAGE
CASE 64606
ISSUE L
NOTES:
1. LEADS WITHIN 0.13 (0.005) RADIUS OF TRUE
POSITION AT SEATING PLANE AT MAXIMUM
14 8 MATERIAL CONDITION.
2. DIMENSION L TO CENTER OF LEADS WHEN
B FORMED PARALLEL.
3. DIMENSION B DOES NOT INCLUDE MOLD
1 7 FLASH.
4. ROUNDED CORNERS OPTIONAL.
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
A 0.715 0.770 18.16 19.56
F L B 0.240 0.260 6.10 6.60
C 0.145 0.185 3.69 4.69
D 0.015 0.021 0.38 0.53
F 0.040 0.070 1.02 1.78
C G 0.100 BSC 2.54 BSC
H 0.052 0.095 1.32 2.41
J J 0.008 0.015 0.20 0.38
N K 0.115 0.135 2.92 3.43
SEATING L 0.300 BSC 7.62 BSC
PLANE K M 0_ 10_ 0_ 10_
H G D M N 0.015 0.039 0.39 1.01

MOTOROLA ANALOG IC DEVICE DATA 11

 MC1496, B

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12 MOTOROLA ANALOG IC DEVICE DATA

*MC1496/D*
MC1496/D
This datasheet has been download from:

www.datasheetcatalog.com

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