Roll Number:

Thapar University Patiala

Department of Electronics & Communication Engineering
BE-ECE (VII Semester) ESE UEC-801: Advanced Solid State Devices
16th Dec 2014
Time: 03 Hours; MM: 40 Name of Faculty: Dr. Sanjay Kumar & Sakshi

NOTE: All the questions are compulsory and have to be done in serial order.
Assume any missing data/information.

An abrupt p+ n junction is formed in Si with a donor doping of Nd = 1015cm-3 and acceptor doping of (8)
Na = 1019cm-3. If the length of the n-region is 22 pm and the junction is operated at a reverse bias of
300 V (which is also the breakdown voltage for the junction). Out of the following options, which mode
will the device work in? (i) Avalanche breakdown, (ii) Zener breakdown, (iii) Punch--through, (iv) Ohmic
region. Justify your answer with help of suitable set of calculations, wherever required.
Q2 Consider a symmetric pn Si junction (Na = Nd = 10 cm-3). If the peak electric field in the junction at (8)
breakdown is 5 X 108 V /cm, what is the reverse breakdown voltage for this junction? Elaborate it in
detail?
y3 A Si sample with Fermi level 0.0259eV above the intrinsic level is shown in Fig. 1. A metallic contact of
gold is made on A side. If the sample is operated at 300 K.

\
., A
1%... (8)

Fig. 1
i. Sketch and label the energy band diagram for metal-semiconductor (MS) contact developed across A.
1. Now Si sample is doped with Indium impurities on the B side as shown in the shaded region in the
Fig. 1 with a concentration of 9.9 X 1014 cm' and then same metal contact is made on the B side as
well. Sketch the energy band diagram for MS contact developed across B.
iii. Comment on the behavior of MS contact on A and B sides.
Given: Electron affinity for Si = 4.05 eV, Work function of Au = 4.8 eV, ni of Si at 300 K
=
1.5 X 1010 cm-3.
Q4 (a) Aluminum is alloyed into an n-type Si sample (Nd = 1016 cm-3), forming an abrupt junction of
circular cross section, with a diameter of 0.05 cm. Assume that the acceptor concentration in the (5)
alloyed re-grown region is Na = 4 X 1018 cm-3. Calculate Vo, xpo, xno, Q+ and E0 for this junction
at equilibrium. Sketch the plot for charge density and electric field w. r. t width of the depletion
region.
(3)
(b) Draw the various doping profiles of an IMPATT Diode.
(a) Explain how the two-valley model theory gives negative resistance in certain devices? (4)
QS
(4)
(a) Explain the I - V characteristics (current-voltage) of tunnel diode by using energy-band diagram.

The evaluated answer-sheets will be shown on 22" December' 2014 (Monday) between 11 AM to 12
Noon. After this, no queries will be entertained.