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HOME SCORE CARD TIME MANAGEMENT QUESTIONS REPORT SOLUTION
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MY PROFILE Solution Report For Advanced Electronics

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Q.1 The fundamental period of the discrete time signal given below is
a. 6
b. 3
c. 2
d. none of these
Attempt Correct Correct Ans. b

FAQ? Have any doubt? Solution
Q.2 The discrete time system described by

y(n) = cos[x(n)] is
a. linear and stable

b. non-linear and memory less
c. time invariant and invertible
d. time varying

Q.3
A discrete time system has impulse response The
system is
a. causal and stable
1 of 11 7/1/2017 12:57 AM
b. stable, non-causal and has memory

c. non-causal and has memory
d. memory less
Attempt Incorrect Your Ans. b Correct Ans. c

Q.4
The impulse response of a discrete time system is If the
input to the system is 2, then the output will be
a.
b.
c.
d.

Q.5 Two discrete time sequences h1(n) and h2(n) have lengths 3 and 7
respectively. The maximum length of the sequence h3(n) = h1(n) h2(n)
(where denotes convolution) is
a. 10
b. 11
c. 9
d. 7
Not Attempt Correct Ans. c

Q.6 The filter characteristics of a discrete time system is characterized by the
following difference equation
The system has _____________ characteristics.
a. low pass
b. high pass
c. band pass
d. band reject
2 of 11 7/1/2017 12:57 AM

Q.7 A discrete time signal x(n) has DTFT X(ej ). The DTFT of nx(n) is
a.
b.
c.
d.

Q.8 A discrete time signal x(n) has DFT X(k). If x(n) = {1, 2, 1, 3}, then X(2) is
(Assume 4-point DFT)
a. 4
b. 5
c. 6
d. 7
Attempt Incorrect Your Ans. a Correct Ans. d

Q.9 Which one of the following windows has maximum main lobe width
a. Hamming
b. Hanning
c. Rectangular
d. Blackman
Attempt Incorrect Your Ans. c Correct Ans. d

Q.10 When the 8051 microcontroller is in idle mode,

S1: The on-chip oscillator is stopped
S2: The clock to the CPU is disabled
S3: Interrupts, serial port and timer blocks are active
Select the correct statements using the codes given below.
a. S1 and S2 only
b. S1 and S3 only
3 of 11 7/1/2017 12:57 AM
c. S2 and S3 only
d. S1, S2 and S3

Q.11 Consider the following statements regarding the memory addressing of 8051
microcontroller.
S1: The address range 80 H - FF H of on-chip RAM is assigned to special
function registers.
S2: The address range 80 H - FF H of on-chip RAM is accessible only with
direct addressing mode.
S3: The address range 00 H - 7F H of on-chip RAM is accessible with direct or
indirect mode of addressing.
a. S1 and S2 only
b. S1 and S3 only
c. S2 and S3 only
d. S1, S2 and S3
Attempt Incorrect Your Ans. c Correct Ans. d

Q.12
Consider the analog filter The digital filter equivalent using
impulse invariant method is
a.
b.
c.
d.
Attempt Correct Correct Ans. c

Q.13 For high SNR in radar signal processing we want ____________.
4 of 11 7/1/2017 12:57 AM
a. short durated pulse

b. long durated pulse
c. both (a) and (b)
d. none of these
Attempt Incorrect Your Ans. c Correct Ans. b

Q.14 Consider the following statements.

S1: Monolithic Technology is used to fabricate only active components.
S2: Thin Film Technology is used to fabricate only passive components.
S3: Thick Film Technology is used to fabricate only passive components.
a. S1 and S2 only
b. S1 and S3 only
c. S2 and S3 only
d. S1, S2 and S3
Attempt Incorrect Your Ans. a Correct Ans. c


S1: In the process of Ion implantation, the depth of penetration is related to
the energy of the ion beam, which can be controlled by the accelerating-field
voltage.
S2: Doping through Ion implantation is more accurate than doping through
diffusion.
S3: Ion implantation requires very high operating temperature than diffusion.
a. S1 and S2 only
b. S1 and S3 only
c. S2 and S3 only
d. S1, S2 and S3
Not Attempt Correct Ans. a

Q.16 If the minimum thickness of the oxide layer for 1.5 m technology is 25 nm,
then the minimum thickness of the oxide layer required for the 0.13 m
technology will be
a. 20 nm
b. 288.5 nm
c. 2.167 nm
d. 3.25 nm
5 of 11 7/1/2017 12:57 AM

Q.17 Select the correct statement regarding the Oxide layer formation using the
processes chemical-vapor deposition (CVD) and Dry Oxidation.
a. Oxide layer through CVD process has good electrical characteristics than that of
thermally grown oxide layer.
b. CVD process requires large temperature than dry oxidation.
c. CVD process is faster than dry oxidation and requires a low temperature.
d. Oxide layer through CVD process has very high relative permittivity.


S1: BiCMOS processes are often very complicated and costly.
S2: The performance of CMOS technology is better than that of BiCMOS
technology.
a. S1 only
b. both S1 and S2
c. S2 only
d. neither S1 nor S2
Attempt Incorrect Your Ans. b Correct Ans. a

Q.19 In IC technology, dry oxidation (using dry oxygen) as compared to wet

oxidation (using steam or water vapor) produces
a. Superior quality oxide with a higher growth rate

b. Inferior quality oxide with a higher growth rate
c. Inferior quality oxide with a lower growth rate
d. Superior quality oxide with a lower growth rate
Attempt Incorrect Your Ans. a Correct Ans. d


S1: In n-well process 8 mask layers are used.
S2: In p-well process 8 mask layers are used.
S3: In twin-tub process 9 mask layers are used.
a. S1 and S2 only
b. S1 and S3 only
6 of 11 7/1/2017 12:57 AM
c. S2 and S3 only
d. S1, S2 and S3
Not Attempt Correct Ans. d

Q.21 Consider the following statements regarding the single crystal growing
techniques namely, Czochralski crystal growing process (CZ process) and
Float Zone technique (FZ process).
S1: Growth speed is higher in FZ process compared to CZ process.
S2: Heat-Up and Cool-Down times are longer in FZ process compared to CZ
process.
S3: Metallic impurity content is higher in CZ process compared to FZ
process.
a. S1 and S2 only
b. S1 and S3 only
c. S2 and S3 only
d. S1, S2 and S3
Not Attempt Correct Ans. b

Q.22 The crystal structure of silicon is
a. Face Centered Cubic

b. Body Centered Cubic
c. Diamond
d. Hexagonal

Q.23 Select the wrong statement regarding the Molecular Beam Epitaxy (MBE)
process.
a. MBE is very adaptable to ion-implantation doping process.

b. Linear doping profile can be obtained using MBE process.
c. MBE is a non CVD epitaxial process.
d. MBE process requires very high temperature.
Not Attempt Correct Ans. d

Q.24 Which one of the following lithography techniques can be used to get very
high resolution?
7 of 11 7/1/2017 12:57 AM
a. Photolithography
b. Electron beam lithography
c. X-ray lithography
d. Ion beam lithography

Q.25 Which one of the following VLSI design styles is preferred to get high
performance of the product?
a. Full-custom design
b. Semi-custom design
c. Field programmable gate array design
d. Gate array design

Q.26 Consider the following statements regarding Field Programmable Gate Array
(FPGA) design and Complex Programmable Logic Device (CPLD) design.
S1: The functionality of FPGA-based design is implemented by lookup table.
S2: The functionality of CPLD-based design is implemented by PAL-like
structures.
S3: Both FPGA and CPLD design styles can be used for high density
designs.
a. S1 and S2 only
b. S1 and S3 only
c. S2 and S3 only
d. S1, S2 and S3

Q.27 Programmable Logic Array (PLA) consists of
a. Fixed AND array followed by a programmable OR array

b. Fixed OR array followed by a programmable AND array
c. Programmable AND array followed by a programmable OR array
d. Programmable AND array followed by a fixed OR array

Q.28 Select the correct one of the following statements regarding the finite state
machines.
8 of 11 7/1/2017 12:57 AM
a. In Mealey machine the output is a function of present state only

b. In Moore machine the output is a function of present state as well as present
input.
c. For implementing same function, the Moore machine requires more number of
states compared to Mealey machine.
d. The design of a Moore machine is complex compared to the design of a Mealey
machine

Q.29 Speed up factor of a k-segment instruction pipeline on executing m number

of instructions is
a.
b.
c.
d.

Q.30 Which one of the following Flags is not used in 8051 Microcontroller?
a. Carry flag
b. Parity flag
c. Zero flag
d. Overflow flag

Q.31 Which one of the following ports of 8051 microcontroller can be used as
Address bus to external memory?
a. Port-0
b. Port-1
c. Port-2
d. Port-3

9 of 11 7/1/2017 12:57 AM
Q.32 What will happen, when the instruction MOV R0, 89 H is executed in 8051
microcontroller?
a. The data in register R0 will be moved to the address location 89 H

b. The data in TMOD register will be moved to the register R0
c. The data 89 H is moved to the register R0
d. It is an invalid instruction in 8051 Microcontroller

Q.33 Which one of the following interrupt sources of 8051 microcontroller has the
highest priority?
a. Timer-0
b. Timer-1
c. External INT-0
d. External INT-1

Q.34 Which one of the following special function registers of 8051 microcontroller
is not bit addressable?
a. Serial port control register (SCON)

b. Power control register (PCON)
c. Timer control register (TCON)
d. Interrupt enable register (IE)

Q.35 Assertion (A): Aluminium has been discarded as gate metal in MOSFET.
Reason (R): Aluminium cannot withstand high temperature.
a. A
b. B
c. C
d. D

Essay FAQ? Have any doubt? Solution
Q.36 Assertion (A): Silicon is mainly used for making ICs and not Germanium.
Reason (R): In Silicon, SiO2 layer can be formed very easily. Corresponding
oxide layer cannot be formed in Germanium.
10 of 11 7/1/2017 12:57 AM
a. A
b. B
c. C
d. D

Q.37 Assertion (A): The spectrum in DTFS is discrete and periodic.

Reason (R): There are no convergence issues in DTFS.
a. A
b. B
c. C
d. D

Q.38 Assertion (A): FIR filters are non-recursive.

Reason (R): All FIR filters have linear phase.
a. A
b. B
c. C
d. D

11 of 11 7/1/2017 12:57 AM

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MADE EASY ONLINE TEST SERIES https://onlinetestseriesmadeeasy.in/madeeasy/index.php?pageName=time...

CBT 2017 Ankur Tripathi (Enroll User) Log Out

HOME SCORE CARD TIME MANAGEMENT QUESTIONS REPORT SOLUTION

MY PROFILE Solution Report For Advanced Electronics

Attempt Correct Correct Ans. b

Q.2 The discrete time system described by

a. linear and stable

Attempt Correct Correct Ans. b

a. causal and stable

b. stable, non-causal and has memory

Attempt Incorrect Your Ans. b Correct Ans. c

The impulse response of a discrete time system is If the

input to the system is 2, then the output will be

Attempt Incorrect Your Ans. b Correct Ans. c

Not Attempt Correct Ans. c

Q.6 The filter characteristics of a discrete time system is characterized by the

following difference equation

The system has _____________ characteristics.

Attempt Correct Correct Ans. b

Attempt Incorrect Your Ans. b Correct Ans. c

Attempt Incorrect Your Ans. a Correct Ans. d

Attempt Incorrect Your Ans. c Correct Ans. d

Q.10 When the 8051 microcontroller is in idle mode,

Attempt Incorrect Your Ans. b Correct Ans. c

Attempt Incorrect Your Ans. c Correct Ans. d

impulse invariant method is

Attempt Correct Correct Ans. c

Q.13 For high SNR in radar signal processing we want ____________.

a. short durated pulse

Attempt Incorrect Your Ans. c Correct Ans. b

Q.14 Consider the following statements.

Attempt Incorrect Your Ans. a Correct Ans. c

Q.15 Consider the following statements.

Not Attempt Correct Ans. a

Not Attempt Correct Ans. c

Not Attempt Correct Ans. c

Q.18 Consider the following statements.

Attempt Incorrect Your Ans. b Correct Ans. a

Q.19 In IC technology, dry oxidation (using dry oxygen) as compared to wet

a. Superior quality oxide with a higher growth rate

Attempt Incorrect Your Ans. a Correct Ans. d

Q.20 Consider the following statements.

Not Attempt Correct Ans. d

Not Attempt Correct Ans. b

Q.22 The crystal structure of silicon is

a. Face Centered Cubic

Not Attempt Correct Ans. c

a. MBE is very adaptable to ion-implantation doping process.

Not Attempt Correct Ans. d

Not Attempt Correct Ans. b

Not Attempt Correct Ans. a

Not Attempt Correct Ans. a

Q.27 Programmable Logic Array (PLA) consists of

a. Fixed AND array followed by a programmable OR array

Not Attempt Correct Ans. c

a. In Mealey machine the output is a function of present state only

Not Attempt Correct Ans. c

Q.29 Speed up factor of a k-segment instruction pipeline on executing m number

Not Attempt Correct Ans. b

Not Attempt Correct Ans. c

Not Attempt Correct Ans. a

a. The data in register R0 will be moved to the address location 89 H