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Surface Micromachining-1
Surface Micromachining
! Basic process sequence (poly-Si)
Fabricating a poly-Si anchor
Passivation layer
PSG-phosphosilicate glass
Structural material (poly-Si)-dry etching for patterning
Spacer etching or release
Generic principle of surface micromachining
LPCVD of poly-Si
! Stiction
! Sacrificial layer
! Sealing processes
Surface Micromachining
Advantages :
- Variable-capacitance side-
drive micromotors require
electrically conducting materials
for the rotor and the stator; this
is satisfied by heavily P-doped
poly-Si.
- The stator poles need to be
electrically isolated from the
rotor, the substrate, and one
another; LPCVD silicon nitride
will do this job.
Side-drive micromotor :
Process Flow
Basic Process Sequence (poly-Si)
n+
! Blanket n+ diffusion of Si substrate
(ground plane) n
! Passivation layer (e.g. SiO2 , Si3N4,
LPCVD Si3N4 on top of SiO2) n+
! Opening up the passivation layer for n
contacts (observe color change or
hydrophobic/hydrophilic behavior): wet Lm
wet (BHF) tSiO2
dry (SF6) Photoresist Lm + 2tSiO2
! Strip resist
dry
Si3N4
Basic Process Sequence (poly-Si)
! Deposition of a sacrificial layer- PSG
phosphosilicate glass (PSG)
! Densification at 950 C for 30-60
min in wet oxygen
! Base window etching in BHF for
anchors (taper might be needed,
reflow, plasma etch conditions,
gradient in the etch rate)
! Structural material deposition e.g.
poly-Si (doped or undoped) from Structural layer
(CVD at about 600C , 73 Pa and
125 sccm at about 100/min).
! Anneal of the poly-Si at 1050C for
1 hour to reduce stress in the
structure
SiH4 Si + 2H2
Basic Process Sequence (poly-Si)
! Doping: in-situ, PSG sandwich and
ion implantation
! Patterning of structural material
e.g. RIE, say, CF4-O2
! Release step, selective etching of
spacer layer e.g. in diluted HF
Ri Rm
RS
bonding)
Solutions:
C
Stand-off bumps
Sacrificial polymer
Sacrificial poly-Si links to stiffen the
structures D
HF vapor
Freeze-drying water/methanol mixtures
Super critical cleaning E
Bumps Polysilicon
Stiction Prevention
! Phase-change release method
At supercritical region, the liquid anf
vapor phases cease to exist as distinct
states.
For CO2, the supercritical region is
T>31.1oC and P>72.8 atm
Mulhern et al. (1993) made simple Poly-Si
structures using an LTO sacrificial layer and
the LTO is HF etched and the structures
rinsed in DI water and without letting them
dry. The water was exchanged with methanol
by dilution and then transferred to a pressure
vessel in which the methanol was replaced by
liquid CO2 at 25oC and 1,200 psi. Then the
contents of the pressure vessel were heated to
35oC and CO2 was vented. By this way, free
standing poly0Si cantilever beams up to 850
m in length could be release without stiction
Stiction Prevention
! Geometry/process-specific release methods