Term End Examination - November 2012

Course : EEE508 - Synthesis of Nanomaterials and Thin Film Slot: C1

Deposition

Class NBR : 4616

Time : Three Hours Max.Marks:100

Answer ALL the Questions

1. a) i) What are the various techniques to synthesis nanoparticles in the gas phase? [8]
Explain any two with neat sketch. Explain the necessary conditions for the growth in
gas phase.

ii) What is the typical reductant in bioorganism responsible for the formation of [2]
nanoparticles?

OR

1. b) Explain homogeneous nucleation theory. Show that the rate of nucleation of [10]
nanoparticles is

C o KT G *
R N = nP = exp
33 KT

2. a) With a neat diagram, explain the laser ablation technique for the synthesis of [8]
nanoparticles. What are the typical features of this method?

b) What are the typical features when a material is reduced to nanoscale? [2]

3. a) With necessary examples, explain the different types of stabilization for nanoparticles. [8]
What is the need of stabilizers during the growth of nanoparticles?

b) Why electrochemical route is advantageous for the growth of nanomaterials. Explain [8]
the mechanism of growth during electrochemical process.

c) What are FAR and FUAR type of reactors? Explain the two types of Flame aerosol [12]
reactors for the synthesis of nanoparticles and collection systems.

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4. (a) What are the typical parameters involved during the arc discharge process for the [10]
synthesis of nanoparticles? With necessary diagram, explain the arc discharge process
for the synthesis of silver nanoparticles.

OR

4. (b) i) Explain the mechanism and types of sputtering technique for thin film fabrication. [8]
What kind of sputtering is used for insulating targets?

ii) What is a typical vacuum system? What is the need of vacuum pump? [2]

5. a) Explain the complete wafer fabrication process. [10]

b) Explain positive displacement pump and its types. What kind of pressure is needed for [6]
these pumps?

c) Suppose the effective pumping speed from a chamber is 250 l/sec and we wish to inject [2]
a gas flow of 0.1 torr-liter/second flow of gas into the chamber. What will the steady-
state pressure be?

6. a) What are the typical features of a cryopump? For what application do you need this [2]
pump?

b) Explain the Czochralski growth process for Si single crystal. What are the controlling [8]
factors for the same?

7. a) What are the differences between PVD and CVD methods? With necessary examples, [8]
explain the different types of CVD methods.

b) Explain the types of Epitaxial growth process for thin films. [6]

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