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Development of n-ch Power MOSFETs

(100V to 500V Class)
for Space Applications

Masanori INOUE, Humiaki KIRIHATA, Takashi KOBAYASHI,

Naomi IKEDA*), and Satoshi KUBOYAMA*)

Fuji Electric Device Technology Co., Ltd.

*) JAXA
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Outline

Roadmap and Fujis Rad-Hard Power MOSFETs

Performance: Ron, TID, SEE-SOA
Futures of QT and QCI
Main Characteristics of SMD and TO-254 Products
Development Plan of New Products
Conclusions

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Roadmap of Fujis Power MOSFETs

2001 2003 2005
1990s 2007 2008 2009 2010 2011 2012
-02 -04 -06
BJT
Development
st
1 Gen. MOS (500V, 250V)
Production
1992 2nd Gen. MOS Technology

1998
TO-254 PKG Series (100,130, 200,250, 500V)

08 for Domestic
QML Parts
SMD-PKG Series (100,130, 200,250, 500V)

09 for Oversea

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Photographs of Fujis Power MOSFETs

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Performance
Ron: Fujis 2nd Generation MOSFET Technology
On-sate Resistance

100 250V MOS

Fujis Rad-Hard Power MOSFET

rd
Ha technology was presented at the
Normalized RDS(on)

d-
Ra 17th MEWS, 2004.
en ral
st G e ne MOS
1 G se
50 r po 0.18/ 500V device
Pu
250V MOS 38m/ 250V device
rd 26m/ 200V device
200V MOS d- Ha
Ra
G en 17m/ 130V device
100V MOS 2nd it 13m/ 100V device.
im
on L
S il i c
0
100 150 200 250 300 350
BVDSS [V]
BVDSS dependence of RDS(on)

The Ron shows the top-class performance in the world.

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TID Source: Co60 gamma-ray

Dose: 1000 Gy(1000Gy/hr), 3000 Gy(3000Gy/hr), 6000 Gy(3000Gy/hr)
Total Ionizing Dose Bias Conditions (During and after irradiation)
(a) VDS=0V, VGS=20 V (b) VDS=0V, VGS=-20 V (c) VDS=200V, VGS=0V
Test Sample: JAXA R 2SK4158 (250V)
300 5

3
250

@Id=1mA, Vds=5V
2
BVdss(V)
@Id=1mA

Vgs(th)(V)
1

200 BIAS
(a):VGS=+20V 0 BIAS
(b):VGS=-20V (a):VGS=+20V
(c):VDS=200V (b):VGS=-20V
-1 (c):VDS=200V

150 -2
0 5000 10000 0 5000 10000
Total Dose(Gy) Total Dose(Gy)
Total dose dependence of BVDSS Total dose dependence of VGS(th)

The TID shows the good performance over 1000Gy (100kRad).

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SEE-SOA (SEB/SEGR)
Single Event Effect Safe Operating Area
Single Event Burnout / Single Event Gate Rupture
300

250

200
LET: 40.1MeV/(mg/cm2)

VDS (V)
Ion: 89Y
150
Energy: 928 MeV
Range: 102m
TA=25+/-5oC 100
Fluence: 3E5+/- 5% ions/cm2
Irradiation angle: Perpendicular to die surface 50
Test Sample: JAXA R 2SK4158 (250V)

0
0 -5 -10 -15 -20 -25
VGS (V)

The SEE-SOA shows the good performance up to

LET=40.1MeV/(mg/cm2).
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Features of QT and QCI in JAXA-QTS-2030

Applicable Documents
TO-254 Series SMD Series
Available Fujis Rad Hard MOSFETs The JAXA General Spec.
Part No. Packag Part No.
Spec Spec Package
JAXA R e JAXA R JAXA-QTS-2030C
2SK4048 100V/18m TO-254 2SK4217 100V/13m SMD-2
2SK4049 100V/33m TO-254 2SK4218 100V/28m SMD-1 The JAXA Detail Spec.
2SK4050 100V/69m TO-254 2SK4219 100V/64m SMD-0.5
JAXA-QTS-2030/101A
2SK4214 130V/24m TO-254 2SK4152 130V/17m SMD-2
2SK4215 130V/46m TO-254 2SK4153 130V/39m SMD-1 JAXA-QTS-2030/102
2SK4216 130V/96m TO-254 2SK4154 130V/89m SMD-0.5
JAXA-QTS-2030/103
2SK4051 200V/33m TO-254 2SK4155 200V/26m SMD-2
2SK4052 200V/69m TO-254 2SK4156 200V/62m SMD-1
2SK4053 200V/155m TO-254 2SK4157 200V/148m SMD-0.5 The JAXA Appl. Data Sheet
2SK4054 250V/45m TO-254 2SK4158 250V/38m SMD-2 JAXA-ADS-2030/101A
2SK4055 250V/98m TO-254 2SK4159 250V/91m SMD-1
2SK4056 250V/230m TO-254 2SK4160 250V/223m SMD-0.5
JAXA-ADS-2030/102
2SK4185 500V/0.18 TO-254 2SK4188 500V/0.18 SMD-2 JAXA-ADA-2030/103
2SK4186 500V/0.48 TO-254 2SK4189 500V/0.48 SMD-1
2SK4187 500V/1.15 TO-254 2SK4190 500V/1.15 SMD-0.5

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QT
Qualification Test

QT
The QT in accordance with the JAXA-QTS-2030/101A*), 102, and 103
had been successfully performed by FDT and certified by JAXA. And the
devices were listed in the QML on May 2008.

Correspondence with the MIL-PRF-19500N

The QT specified in the JAXA-QTS-2030/102 and 103 is comprised of
the same test items specified in the MIL-PRF-19500N.
*) Note

The JAXA-QTS-2030/101A is re-certified, based on the QT test results

of the same dice used in the JAXA-QTS-2030/102 and the same TO-254
package used in the JAXA-QTS-2030/103.

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QCI
Quality Conformance Inspection

Sample selection for QCI

The dice of higher rated voltage and larger size in one wafer lot
are selected for QCI to represent the wafer lot.

Omission of QCI items

When the devices built with the representative dice passed the QCI
items, it is regarded that the devices with the lower rated voltage and
smaller size dice in the wafer lot passed all or a part of the QCI items.
The detailed criteria for the omission is shown in the JAXA
Specifications: JAXA-QTS-2030/101A, 102, and 103.

These features come from the wafer lot consisting of dice with
various voltage ratings and sizes designed with the same rule.
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Wafer Lot
250V 200V
130V 100V
One wafer lot consists of 1 to 4 rated voltage
types of Si wafer and three kinds of die size
(1/1, 1/2, and 1/4 sizes).

The same fabrication process, the same

photo-mask, and the same die design are Unit Block

applied to the 100V, 130V, 200V, and 250V

dice.

In the wafer process, the difference is only Schematic representation of the

Si epi-crystal specifications for each rated
voltage.
wafer lot for the die family
A large number of unit block consisting of 1/1,
1/2, and 1/4 size dice are arranged on one
wafer.

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Fujis Rad-Hard Power MOSFET Series

Packages TO-254 SMD-2 SMD-1 SMD-0.5
Voltage
Ratings
Die Sizes
2SK4048 2SK4152
1/1 size 2SK4051 2SK4155
2SK4054 2SK4158
100V 2SK4214 2SK4217

130V 1/2 size

2SK4049
2SK4052
2SK4153
2SK4156
2SK4055 2SK4159
200V 2SK4215 2SK4218
2SK4050 2SK4154
250V 1/4 size 2SK4053 2SK4157
2SK4056 2SK4160
2SK4216 2SK4219

1/1 size
2SK4185 2SK4188

500V 1/2 size 2SK4186 2SK4189

1/4 size 2SK4187 2SK4190

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Main Characteristics of SMD Products

Type VDSS ID RDS(on) PD VGS VGS(th) Qg Radiation Spec. No
Max.*1
Max. Level PKG
JAXA R _ V A W V V nC krad JAXA-QTS-20

2SK4217 100 42 0.013 250 20 2.5-4.5 220 100 SMD-2 102

2SK4218 100 42 0.028 150 20 2.5-4.5 100 100 SMD-1 102

2SK4219 100 15 0.064 70 20 2.5-4.5 50 100 SMD-0.5 102

2SK4152 130 42 0.017 250 20 2.5-4.5 220 100 SMD-2 102

2SK4153 130 39 0.039 150 20 2.5-4.5 100 100 SMD-1 102

2SK4154 130 15 0.089 70 20 2.5-4.5 50 100 SMD-0.5 102

2SK4155 200 42 0.026 250 20 2.5-4.5 220 100 SMD-2 102

2SK4156 200 32 0.062 150 20 2.5-4.5 100 100 SMD-1 102

2SK4157 200 14 0.148 70 20 2.5-4.5 50 100 SMD-0.5 102

2SK4158 250 42 0.038 250 20 2.5-4.5 220 100 SMD-2 102

SMD Package 2SK4159 250 26 0.091 150 20 2.5-4.5 100 100 SMD-1 102

2SK4160 250 12 0.223 70 20 2.5-4.5 50 100 SMD-0.5 102

2SK4188 500 23 0.18 250 20 2.5-4.5 300 100 SMD-2 103

2SK4189 500 10 0.48 150 20 2.5-4.5 120 100 SMD-1 103

2SK4190 500 4.5 1.15 70 20 2.5-4.5 48 100 SMD-0.5 103

*1
RDS(on): VGS=12V, *2 PD: TC=25oC

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Main Characteristics of TO-254 Products

Type VDSS ID RDS(on) PD VGS VGS(th) Qg Radiation Spec. No
Max.*1
Max. Level PKG
JAXA R _ V A W V V nC krad JAXA-QTS-20

2SK4048 100 42 0.018 250 20 2.5-4.5 220 100 TO-254 101A

TO-254 Package 2SK4049 100 42 0.033 125 20 2.5-4.5 100 100 TO-254 101A

2SK4050 100 15 0.069 62.5 20 2.5-4.5 50 100 TO-254 101A

2SK4214 130 42 0.024 250 20 2.5-4.5 220 100 TO-254 101A

2SK4215 130 35 0.046 125 20 2.5-4.5 100 100 TO-254 101A

2SK4216 130 15 0.096 62.5 20 2.5-4.5 50 100 TO-254 101A

2SK4051 200 42 0.033 250 20 2.5-4.5 220 100 TO-254 101A

2SK4052 200 33 0.069 125 20 2.5-4.5 100 100 TO-254 101A

2SK4053 200 14 0.155 62.5 20 2.5-4.5 50 100 TO-254 101A

2SK4054 250 42 0.045 250 20 2.5-4.5 220 100 TO-254 101A

2SK4055 250 27 0.098 125 20 2.5-4.5 100 100 TO-254 101A

2SK4056 250 12 0.230 62.5 20 2.5-4.5 50 100 TO-254 101A

2SK4185 500 23 0.18 250 20 2.5-4.5 300 100 TO-254 103

2SK4186 500 10 0.48 125 20 2.5-4.5 120 100 TO-254 103

2SK4187 500 4.5 1.15 60 20 2.5-4.5 48 100 TO-254 103

*1
RDS(on): VGS=12V, *2 PD: TC=25oC

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Development Plan of New Products

2007 2008 2009 2010 2011 2012 2013

Development
Control IC and 30V MOSFET for POL Production

n-ch Power MOSFETs QT

Lower Voltage Rating and Lower Ron

p-ch Power MOSFETs QT

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Conclusions
We have developed the rad-hard and low Ron power
MOSFETs in the rated voltage range of 100V to 500V.
Some of products are now supplied for domestic and
oversea customers.

These space use MOSFETs are qualified in

accordance with the JAXA-QTS-2030/101A, 102, and
103. The QT also fulfill the MIL-PRF-19500N.

We are just developing a n-ch MOSFET of voltage

rating lower than 100V and also will start to develop p-
ch MOSFETs in this year.

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Thank you very much!

Matsumoto Castle
Matsumoto, Nagano Pref.

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