PART-A

(10*2=20)

1. Differentiate between diffraction and scattering.

2. The average electric field in a particular 2.0 um GaAs device is 5kV/cm.calculate the average velocity of
Electron,if its mobility value is 8000 cm2/v-s.
3. What is meant by stokes shift?
4. A typical He-Ne laser operates with a current of 10mA at a dc coltage of 2500V and gives an output of
5mW. Determine the overall power efficiency.
5. What are the advantages of photo conductive detector?
6. What are the factors that limit the response time of photodiodes?
7. What is quantum confined stark effect?
8. Define acousto-optic filter.
9. What are the major difference in characteristics of opto electronic ICs when compared to conventional
electronic ICs?
10. Give the condition for complete power transfer from one guide to another in an optical waveguide
directional coupler.

PART-B (5*16=80)

11. (a) From the schrondinger equation, explain the formation of energy bands in solids. (16)

Or

(b) Derive the expression for concentration of electrons and holes in an intrinsic
semiconductor,with relevant diagrams . (16).
12. (a) (i) Explain the principle,construction and working of an electroluminescence device with

necessary diagrams.
(8)

(ii) Explain in detail about molecular lasers .(8)

Or

(b) (i) Discuss the theory of mode locking in laser,with neat diagrams and hence derive
an expression

for irradiance in a mode locked laser.

(12)

(ii) Explain active and passive mode locking. (4)

13 (a) Compare the principle, construction and working of a thermal detector and a photo
conductive detector. (16)
 Or
(b)(i) Brief about various noise sources in a photo multiplier tube.
(8)

(ii) With an equivalent circuit, explain the factor affecting the bandwith of a PIN photo
diode. (8)

14. (a) Explain with neat diagram,the construction of electro optic effect based external
modulator. Also deduce the

expression of modulated light.

(16)

Or
(b) (i) Discuss in detail the principle and operation of a photonic switch based on Self
electro optic Device
(SEED).
(10)
(ii) Explain the conceptof Bipolar controller Modulator. (6)

15. (a) (i) Explain any two application of OEIC in detail. (12)

(ii) Write a note on hybrid integration OEIC fabrication. (4)

Or

(b) (i) Draw the diagram of a PIN diode and HBT integrated front end photo receiver and
explain its operation. (8)

(ii) Discuss the noise performance in Integrated photot receivers.(8)

PART-A
(10*2=20)

1. What do you understand by wave-particle duality of light?

2. Estimate the energy required to exite electrons from the donar levels to the conduction
band in silicon, given that me=0.26m and relative permittivity of 11.8.
3. Why cathode luminescence is less efficiency than photo luminescence?
4. Find the q-factor of a laser cavity oscillating at 650 nm and having a line width of 1 MHz.
5. Calculate the maximum frequency of operation of a thermal detector with thermal time
constant of 1mS.
6. What are the limitations of germanium based photo diodes?
7. Define electro optic effect.
8. Define the term birefringence.
9. What are the disadvantages of hybrid Opto electronic Integration?
 10.List the factors that dictate the half wave voltage in an active wave guide device,

PART-B
(5*16=80)

11.(a) (i) Explain the principle of superposition and hence derive an expression for maximum
irradiance resulting from four coherent sources.
(12)

(ii) With a neat diagram explain the interference effects in a thin film of refractive
index n. (4)

Or

(b) (i) Explain in detail about the excess carriers in semiconductor and hence derive the
expression for the variation of excess carriers concentration with distance and time.
(12)

(ii) Discuss about the drift and diffusion of carriers with relevant mathematical
expressions. (4)

12.(a) Explain with necessary diagrams the principle,construction and working of a liquid
crystal display. (16)
Or
(b) Discuss the theory of population inversion and threshold condition in two level laser
system. (16)
Also explain with diagram the various transitions involved in a four level system.

13. (a)(i) Explain the principle, construction and working of a photomultipliers.

(10)

(ii) Brief about photo emissive devices.

(6)

Or

(b)(i) Write a short notes on avalanche photo diode.

(5)

(ii) Write a short notes on schottky phodiode.

(3)

(iii) Describe in detail about the parameters used to analyse the detector
performance. (8)

14. (a) (i) Explain the concept of birefringes in uniaxial crystal with necessary diagrams
(8)
 (ii) Derive the expression for retardation between two waves due to applied voltage
in electro

optic material
(8)

Or
(b) (i) Discuss in detail the principle and operation of QCSE based optical switching
device. (8)
(ii) Write a short notes on BRAQWET modulator.
(8)

15. (a) (i) Explain the importance of opto electronic integration.

(8)

(ii) Brief about the principal forms of opto electronic integration with their
relative merit

and demerits.
(8)

Or

(b) Explain the principle and operation of

(i) Waveguides and couplers

(8)

(ii) Waveguide interferometer.

(8)

PART-A (10*2=20)

1. state Heisenberg uncertainity principle.

2. Define exciton recombination.

3. Define fluorescence and phosphorescence.

4. Name the factors which limit the response time of LEDs.

 5. What are the various noises present in photodetectors?

6. Write a short notes on bolometer.

7. Why we go for bipolar control modulator?

8. Determine the change in refractive index due to pockels effect in a 10mm wide KD*P crystal for an
applied voltage of 4kV. The electro optic coefficient and refractive index of the material are 26.4 x 10-12 m/V and
1.51 respectively.

9. What is meant by MODFET?

10. Write briefly about hybrid integration.

PART-B
(5*16=80)

11.(a) (i) Describe the polarization of light in detail.

(8)

(ii) Derive the expression for depletion layer capacitance.

(8)

Or

(b) (i) Write a short notes on work function

(6)

(ii) Write a short notes on density of states.

(5)

(iii) write a short notes on Fermi-dirac distribution function.

(5)

12 . (a) (i) Explain in detail about injection luminescence.

(8)

(ii) Describe in detail about construction , working and response time of LED .
(8)

OR

(b) Describe in detail about semiconductor laser with necessary diagram.

(16)

13. (a) (i) Derive the expression for photoconductive gain.

(8)
 (ii) Describe in detail about the factors limiting the response time of photo diode.
(8)

Or

(b) (i) Write a short notes on silicon photo diode.

(4)

(ii) Describe the characteristics P-I-N photo diode with energy band diagram.
(4)

(iii) Describe the characteristics of photo conductive materials.

(8)

14. (a) (i) Describe in detail about magneto optic-Kerr effect and Faraday effect.
(10)

(ii) Write a short notes on magneto-optic modulator.

(6)

Or

(b) (i) Describe in detail about acousto-optic modulator and deflector.

(8)

(ii) Describe in detail about MQW-HBT.

(8)

15. (a) (i) Describe in detail about OEIC transmitters.

(8)

(ii) Write a short notes on PIN-FET photo receivers.

(8)

Or

(b) (i) Describe in detail about eye diagram of photo receiver.

(8)

(ii) Explain the parameters of photo receiver in detail.

(8)