EEE210 (Physical Electronic)

EEE-210 Physical Electronics
First Midterm Exam. 21.04.2000, 100 min. 100 points, questions, pages
Answers should be filled in the blanks.
NO PARTIAL CREDITS
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) Find the probability of occupation of a level 0.045 eV above the coduction band
edge, if the Fermi level is 0.7 eV above the valence band, the energy gap is 1.1 eV and
the temperature is 300 K. How would you comment the result?
FFD = . . . ;
2.(20)Find the resistance of some semiconductor, 100 m long and 5 m2 in cross-section, if it is

uniformly doped n-type with ND = 1020 m-3, ni = 1016 m-3, e = 0.135 m2V-1s-1; h =0.05 m2V-1s-1.
R= . . . . .M;
3.(20) A uniformly doped n-type silicon semiconductor with 1016 donor atoms per cm3 is subjected
to a boron diffusion with a constant surface concentration of 5*1018 cm-3. It is desired to to form a
pn-junction at a depth of 2.7 m. At what temperature should this diffusion be carried out if it is to
be completed in 2 hours? Find the diffusivity.
D=. . . . . .cm2/s; T=. . . . K;
4.(20) An electron in GaAs has an effective mass of 0.068 m0. Its mean free path is 0.14 microns . If the
mean thermal velocity is 4.125*105 m s-1, find the electron mobility. Under which electric field the drift
velocity of electron would be equal to the thermal velocity.
= . . . .m2V-1s-1 ; E = . . . .V/m ;
5.(20)Give the definitions for the:
a.Low level injection
b.Hall multiplier
c.Phonon scattering
d.Degenerate semiconductor
e.Traps
First Midterm Exam. 21.04.2000, 100 min. 100 points, questions, pages
NO PARTIAL CREDITS
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) Find the probability of occupation of a level 0.045 eV above the coduction band
edge, if the Fermi level is 0.7 eV above the valence band, the valence band is 1.1 eV and
the temperature is 300 K.
FFD = . . . ;
2.(20)Find the resistance of some semiconductor, 100 m long and 5 m2 in cross-section, if it is

uniformly doped n-type with ND = 1020 m-3, ni = 1016 m-3, e = 0.135 m2V-1s-1; h =0.05 m2V-1s-1.
R= . . . . .M;
3.(20) A uniformly doped n-type silicon semiconductor with 1016 donor atoms per cm-3 is
subjected to a boron diffusion with a constant surface concentration of 5*1018 cm-3. It is
desired to to form a pn junction at a depth of 2.7 m. At what temperature should this
diffusion be carried out if it is to be completed in 2 hours?
D=. . . . . .cm2/s; T=. . . . K;
mean thermal velocity is 4.125*105 m s-1, find the electron mobility. Under which electric field the dritf
velocity of electron is equal to the thermal.
= . . . .m2V-1s-1 ; E = . . . .V/m ;
5.(20)Give the definitions for the:
a.Low level injection
If the injected carrier density is small compared with the impurity concentration,the majority carrier
density remains essentially unchanged while the minority carrier density is equal to the injected
carriers density. This condition isw called low-level injection.
b.Hall multiplier
The Hall multiplier is a semiconductor device, where the the output signal is the product of the input
Current I and the magnetic induction Bz.
c.Phonon scattering
The thermal vibrations may be treated quantum-mechanically as discreate particles called phonons.
The collisions of phonons with electrons and holes is called lattice or phonon scattering.
d.Degenerate semiconductor
When the impurity concentration is very high and approaches the effective density of states, the
Fermi level will be very close to Ec or Ev. For example, when Ec Ef 3kT, the semiconductor is
said to be degenerate
e.Traps
Traps are the defects or impurities whose electronic states are deep in the forbidden gaps. They
capture electrons and holes thus contributing to the recombination processes.

Second Midterm Exam. 26.05.2000, 100 min. 100 points, 4 questions, 5 pages
NO PARTIAL CREDITS; ALL CALCULATIONS ARE VALID UNTIL THE FIRST ERROR .
SURNAME . . . . . . . . . . . . . . NAME . . . . . .
1.(30) A Si p-n junction with area 10-4 cm2 has Na = 1017 cm-3 on the p side
and Nd = 1017 cm-3 on the n side. The diode has a forward bias of 0.7 V.
Assuming that n = 700 cm2/Vs, p = 250 cm2/Vs, and p = n = 1 s,
find parameters given below. Plot Ip , In , I versus distance on a diagram.
Neglect recombination within W.
Lp = . . . .cm; Ln = . . . .cm; pn(0) = . . . . .cm-3;
np(0) = . . . . cm-3; Ip(0) = . . . A; In(0) = . . . A;

Ip(xn) = . . . . . A; In(xp) = . . . . . A; I = . . A;
2.(15) A p+-n Si junction is doped with Nd = 1016 cm-3 on the n-side, where
Dp = 10 cm2/s and p = 0.1 s. The junction area is 10-4 cm2. Calculate the
reverse saturation current Ir, and the forward current If when V = 0.6 V.
Ir = . . . . . A; If = . . . . A;
3.(15) A silicon diode operates at a forward voltage of 0.5 V. Calculate the factor F
by which the current will be multiplied when the temperature is increased from
25 to 150 C. Assume that I I0 eV/T and that I0 doubles every 6 C.
F= . . . . .
4.(40) In a silicon pnp transistor, the doping concentrations for the emitter, base, and
collector are 1019, 5*1017, and 1015 cm-3. The emitter and base widths are 1 and 0.7 m,
respectively, and the diffusion length is 10 m for both electrons and holes. The collector
width is 50 m and the cross-sectional area is 10-4 cm2. If nE = 130 cm2/Vs; p = 250
cm2/Vs; nC = 1500 cm2/Vs, then calculate: a)emitter injection efficiency; b)base
transport factor; c)normal alpha; d)common emitter current gain; e)inverse alpha; f)IE0;
g) IC0; h)collector-emitter voltage at saturation at IC = 1 mA and IB = 100A.
a) . = . . . ; b) . = . . . ; c) . = . . . ;
d) . = . . . ; e) . = . . . ; f) . . . . A ;
g) . . . . . A; h) . . . . . V;
Final Exam. 19.06.2000, 120 min. 100 points, 5 questions, 5 pages
NO PARTIAL CREDITS; ALL CALCULATIONS ARE VALID UNTIL THE FIRST ERROR .
SURNAME . . . . . . . . . . . . . . NAME . . . . . .
1.(30) An ideal MOS capacitor has a 10 nm thick SiO2 layer and a

p-type Si with Na = 1016 cm-3. It operates under moderate inversion.
Find: a) depletion layer width; b) voltage for moderate inversion;
c) bulk charge; d) threshold voltage; e) oxide capacitance;
f) total capacitance; Take kT/q = 0.0259 v.
a) m; b) V; c) C/cm2;
d) vT = V ; e) F/cm2; f) F/cm2;
2.(20) The potential is given by 1.5*1013 x2 volts. The charge in semiconductor is due
to a uniform distribution of singly charged carriers. Find the concentration of
carriers and their polarity (electrons or holes). The dielectric constant is 12.
N= cm-3 ; Polarity = ;
3.(15) A semiconductor is doped with Nd and has a resistance R1 ( Nd >> ni). The same
semiconductor is then doped with an unknown amount of acceptors Na (Na >> Nd),
yielding a resistance of 0.5 R1. Find Na in terms of Nd if Dn / Dp = 50.
Na = Nd.
4.(15) In some newly developed semiconductor find the ratio of electron drift and
diffusion currents N = Idrift /Idiff at 300 K if the electric field is 105 Vm-1, the
concentration gradient is 1026 m-4 and the electron number density is 1020 m-3.
N= ;
5.(20) In some newly developed semiconductor the bandgap is 0.9 ev, and
ni = 1.5*1016 m-3 at 300 K. At what temperature does ni become 1020, assuming
that Nc and Nv do not vary with temperature. Take kT/q = 0.0259 v.
T= K;

First Midterm Exam. 20.04.2001, 100 min, 100 points, 4 questions, 6 pages
Answers should be filled in the blanks. No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(36) 1014 boron atoms are deposited on the surface of a silicon wafer of surface area 10 mm2.
The sample is then placed in a furnace. If the diffusivity of boron is 1.25*10-12 cm2/s find the
temperature T of the furnace. Find the boron concentration N at the surface after 2 hours. Find
the distance X from the surface where the boron concentration is 1017 atoms/cm3 after 2 hours.
T= K; N = atoms/cm3; X= m;
2.(20) Calculate the concentration of impurities for p- and n-type silicon semiconductors if the
difference between intrinsic and Fermi levels is 3/2 kT.
nn = cm-3; pn = cm-3;
np = cm-3; pp = cm-3;
3.(24) (a) Calculate the conductivity and quasi-Fermi levels for a silicon sample with Nd = 1015 cm-3,
p = 1 s, and GL = 5*1019 cm-3 s-1. (b) Find the value of GL that produces 1015 holes/cm3. What are the
conductivity and quasi-Fermi levels? Take p = 0.6*102 cm2/Vs and n = 1.34*103 cm2/Vs
(a) n = p = cm-3; = / cm;
Efn Ei = ev; Ei E fp = ev;
(b) GL = cm-3 s-1; = /cm;
Efn Ei = ev; Ei E fp = ev;
4.(20) A pn-junction is formed out of germanium ( ni = 2.4*1013 cm-3) with resistivity of 2 cm on

the p-side and 0.1 cm on the n-side. Assuming the junction to be at equilibrium at room temperature
(300 K), find the contact potential VT. Take p = 1.7*103 cm2/Vs and n = 3.6*103 cm2/Vs
VT = v;

Second Midterm Exam. 25.05.2001, 100 min, 100 points, 3 questions, 3 pages
Answers should be filled in the blanks. No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(25) An oxide layer of a MOS transistor has a thickness of 0.1 m. Concentration

of acceptors in a p-type silicon is 3*1014 cm-3 at 300 K. Find: the surface band bending
under moderate inversion MI and strong inversion SI; the threshold voltage TV;
depletion layer width W; total bulk charge Ch.
MI = v; SI = v; TV =
v;
W= cm; Ch = C/cm2;
2.(25) A silicon npn semiconductor has the parameters: xB = 2m, NA = 5 * 1016 cm-3 in a uniformly
doped base, n = 1 s, Dn = 22 cm2/s, and A = 0.01 cm2. If the collector is reversed-biased and InE = 1
mA, calculate the the excess-electron density EED at the base side of the emitter junction, the emitter-
junction voltage VE , and the base transport factor BTF. What should be the mobility of electrons n and
diffusion length Ln.
Ln = m; EED = cm-3; VE =
v;
BTF = ; n =
cm2/vs
3.(50) A Si p-n junction of 50 m * 50 m area at T = 300 K has the following parameters: ND = 1017 cm-
3
,
NA = 1015 cm-3, Dn = 38 * 10 -4 m2s-1, Dp = 13 * 10 -4 m2s-1, n =50 s, p =10 s, ni = 1.4 * 1016 m-3. Find:
a) the saturation current I0; the potential difference 0; b) the depletion layer widths (Xd)-10, (Xd)+0.75 and
the corresponding parallel plate capacitances (C0)-10, (C0)+0.75 at bias voltages of V = -10 v and + 0.75
v; c) the conductance GD and diffusion capacitance CD at V = + 0.75 v.
I0 (10) = A; 0 = v;
(Xd)-10 = m; (Xd)+0.75 (10) = m; (C0)-10 =

F;
(C0)+0.75 = F; GD = S; CD =
F;

The FINAL Exam 15.06.2001, 120 min, 100 points, 5 questions, 4 pages. All calculations
should be done in detail, step by step.Calculations are valid until the first error. Answers
should be filled in the blanks, otherwise they are not valid. No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) A medium is neutral apart from a constant positive charge density Q C/m3 in the region
0 < x < d. The potential at x = 0 is zero and there is no electric field at x = d. Find the
expressions and sketch the diagrams for electric field E(x) and potentil V(x) as a function
of a distance x.
E(x) = ; V(x) = ;
n p Width N Diffusion length L for
(cm2/Vs) (cm2/Vs) ( m) (cm-3) minorities (m)
emitter 150 90 1 1019
base 450 150 0.7 5*1017 20
collector 1500 450 50 1015 10
2.(25) Parameters of a n-p-n Si transistor of 10-4 cm2 area are given in the table. Calculate with a
precision
of no less than four digits: a) normal- NA and inverse- IA alpha; b) base transport factor BTF, common-
emitter current gain CECG, and common-collector current gain CCCG; c) if the lifetimes of carriers are
the same
all over the semiconductor, find the diffusion length LpE for holes in emitter.
NA = ; IA = ; BTF =
;
CECG = ; CCCG = ; LpE =

m ;
3.(20) The concentration of electrons in a semiconductor varies from 1020 m-3 to 1012 m-3 linearly over a
distance
of 4 m. Find: a) the electron diffusion current density Jn diff; b) the concentration of electrons n at the
midpoint of the 4 m distance; c) the electric field at the midpoint when the total current is zero. Take
n = 0.135 m2 V-1s-1 and T = 200 K.
Jn diff = A/m2; n= m-3; =

V/m;
4.(15) Determine the resistance to the lateral current flow of thin film semiconductor stripes of dimension
(length*width) 100*10 microns; 200*20 microns; 100*6 microns, if the sheet resistance is 50 ohms/unit
area.
R100*10 = ; R200*20 = ; R100*6 = ;

5.(20) In n-type germanium with ni = 2.5 * 1019 m-3 and ND = 1022 m-3, a flash of light doubles the hole
number
density. Calculate the generation rate GL and the time t taken for the hole density to decay to 8 * 1016 m-3 if
the hole lifetime is 3 ms.
t = ms; GL = m-3s-1;

The MAKE UP on FINAL Exam 25.06.2001, 120 min, 100 points, 5 questions, 4 pages.
All calculations should be done in detail, step by step.Calculations are valid until the first
error. Answers should be filled in the blanks, otherwise they are not valid. No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(15) In an n-type silicon, the donor concentration corresponds to 1 atom per 107 silicon
atoms, the electron effective mass is 0.33 m0. Calculate: (a) the concentration of donor atoms,
(b) The Fermi level with respect to the conduction band edge at room temperature, (c) if the
Fermi level coincide with Ec, what should be the concentration of donors?
2.(25) p-type silicon MOS capacitor doped 1023 m-3 , has an oxide thickness of 0.1 m. If the gate potential is
5 V,
find: (a) oxide capacitance; (b) derive the quadratic equation for the surface potential s and calculate s;
(c) the voltage across oxide V0; (d) induced charge Qs; (e) depletion layer width Xd.
3.(20)Derive an expression of the anode current IA as a function of the gate current by using the two-
transistor
analog in an SCR.
4.(20) In a p+n junction diode, the width of the n region Wn is much smaller than Lp. Using Ip(x = Wn) =
qASpn
as one of the boundary conditions, derive the carrier and current distributions. Sketch the shape of minority
carriers in the n side for S = 0 and S = .
5.(20) The potential is given by 1.5*1013 x2 volts. The charge in semiconductor is due to a uniform
distribution of singly charged carriers. Find the concentration of carriers and their polarity (electrons or
holes). The dielectric constant is 12.
N= cm-3 ; Polarity = ;

The Ek snav Exam 11.09.2001, 120 min, 100 points, 6 questions,
All calculations should be done in detail, step by step.Calculations are valid until
the first error.
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) Verify the following expression of the temperature dependence of the threshold
voltage for an MOS structure with an n substrate, assuming si = 2 f here and f 0.
2.(15) a) The hole injection efficiency of a pn junction is defined as Ip / I at x = 0. Show that

this efficiency can be written
= Ip / I = 1 / (1 nLp / pLn)
b) What should you do to make approach unity in a practical diode?
3.(20) Derive the expressions for the (a) electric field E(x), (b) potential distribution (x),
(c) depletion layer width Xd, and (d) built-in-potential 0 for a linearly graded pn junction
with a doping gradient a.
4.(10) The injection of carriers gives rises to the splitting of the electron and hole quasi-
Fermi levels. Show that the nonequilibrium product (pn) of a semiconductor with an energy
gap of Eg is the same as the equilibrium product pono of a semiconductor with a bandgap of
Eg (Efn Efp).
5.(20) Sketch the following diagrams: a) Capacitance-voltage characteristics for high and
low frequencies of MOS transistors; b) Electron and hole currents in forward-biased pn
junctions; c)The hybrid- circuit for bipolar transistor with output terminals short-circuited;
d) Charge storage in the base and collector of transistor at cutoff and saturation. Show the
active region; e) Static current-voltage characteristics of a typical tunnel diode. Show its
components.
6.(15) Give the definition for: a) Distribution function; b) Degenerate semiconductor; c)

Phonons;d) one-sided pn junction; e) Conditions for transistor to operate in normal mode.

First Midterm Exam 21.03.2002, 100 min, 100 points, 4 questions, 3 pages. All
calculations should be done in detail, step by step.Calculations are valid until the first error.
Answers should be filled in the blanks, otherwise they are not valid. No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) Derive the electric field in an n-type semiconductor if: (a) Nd = ax, where a is a
constant; (b) Nd = N0 e-ax;
(a) = ; (b) = ;
2.(25) An intrinsic silicon semiconductor is doped with donors to form a resistance of 10 k and ability to
handle
a current density of 50 A/cm2 when 5 volts are applied. Find the necessary concentration of donors Nd if
the
electric field inside the semiconductor should not exceed 100 V /cm. Take the mobility n = 410 cm2/Vs.
Nd = atoms/cm3.
This problem is modernised. Do not use it.
3.(25) Assume that, in an n-type gallium arsenide semiconductor at T = 300 K, the electron concentration
varies linearly from 1*1018 to 7*1017 cm-3 over a distance of 0.10 cm. Calculate the diffusion current
density
Jn diff if the mobility is n = 1000 cm2/Vs.
Jn diff = A/cm2.
4.(30) Calculate the density of states for free electrons in the conduction band per unit volume with
energies between zero and 1 ev.
N= m-3;

Second Midterm Exam 02.05.2002, 100 min, 100 points, 4 questions, 3 pages. All
calculations should be done in detail, step by step.Calculations are valid until the first error.
Answers should be filled in the blanks, otherwise they are not valid. No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(40) A Si p-n junction with area 10-4 cm2 has Na = 1017 cm-3 on the p side and
Nd = 1017 cm-3 on the n side. The diode has a forward bias of 0.7 V. Assuming that
n = 700 cm2/Vs, p = 250 cm2/Vs, and p = n = 1 s, find parameters given below.
Calculate the numerical expressions for Ip(xn), In(xp), and I as a function of a distance. Plot
their diagram. Neglect recombination within W.
Lp = . . . . cm; Ln = . . . . cm; pn(0)

= . . . . . cm-3;
np(0) = . . . . cm-3; Ip(0) = . . . A; In(0) = . . . A;
Ip(xn) = . . . . . A; In(xp) = . . . . . A; I= . .
A;
2.(40) In a silicon pnp transistor, the doping concentrations for the emitter, base, and collector are 1019,
5*1017, and 1015 cm-3. The emitter and base widths are 1 and 0.7 m, respectively, and the diffusion length
is
10 m for both electrons and holes. The collector width is 50 m and the cross-sectional area is 10-4 cm2.
If nE = 130 cm2/Vs; p = 250 cm2/Vs; nC = 1500 cm2/Vs, then calculate: a)emitter injection
efficiency;
b)base transport factor; c)normal alpha; d)common emitter current gain; e)inverse alpha; f) IE0; g) IC0;
h)collector-emitter voltage at saturation at IC = 1 mA and IB = 100A. Use four significant digits in
answers.
a) . = . . . ; b) . = . . . ; c) . = . . . ;
d) . = . . . ; e) . = . . . ; f) . . . . A ;
g) . . . . . A; h) . . . . . V;
3.(15) A p+-n Si junction is doped with Nd = 1016 cm-3 on the n-side, where Dp = 10 cm2/s and p = 0.1 s.
The junction area is 10-4 cm2. Calculate the reverse saturation current Ir, and the forward current If when
V = 0.6 V.
Ir = . . . . . A; If = . . . . A;
4.(5) Draw the voltage-current diagram for a tunnel diode. Show the components of a tunnel current

Final Exam 31.05.2002, 120 min, 100 points, 5 questions, 4 pages. All calculations should
be done in detail, step by step.Calculations are valid until the first error. Answers should be
filled in the blanks, otherwise they are not valid. No partial credits
SURNAME . . . . . . . . . . . . NAME . . . . . .
1.(20) The concentration of electrons in a semiconductor varies from 1020 m-3 to 1012 m-3
linearly over a distance of 4 m. Find: a) the electron diffusion current density Jn diff ; b) the
concentration of electrons n at the midpoint of the 4 m distance; c) the electric field at
the midpoint when the total current is zero. Take n = 0.135 m2V-1s-1; T = 200K.
Jn diff = A/m2; n= m-3; =

V/m;
2.(15) In an n-type silicon, the donor concentration corresponds to 1 atom per 107 silicon atoms, the
electron effective mass is 0.33 mo. Calculate: a) the concentration of donor atoms Nd, b) The Fermi level
with respect to the conduction band edge at room temperature. c) If the Fermi level coinside with Ec, what
should be the concentration of donors N E E ?
f c
a) Nd = cm-3; b) E = eV; c) N E f E c =
cm-3;
3.(15) 0.5 mm long and 10-5 cm2 in cross section intrinsic silicon semiconductor is doped with donors to
form a resistance of 10 k. If the mobilities are n = p = 410 cm2/Vs, find the necessary concentration
of donors Nd.
Nd = atoms/cm3.
I2
4.(20) A silicon diode operates at a forward voltage of 0.5 V. Calculate the factor by which the
I1
current will be multiplied when the temperature is increased from t1 = 25 C to t2 = 150 C. Assume that I
= I0 exp(V / 2T) and that I0 doubles every 6 C.
T1 = V; T2 = V;
I 02 I2
= ; = ;
I 01 I1
2.(25) p-type silicon MOS capacitor doped 1023 m-3, has an oxide thickness of 0.1 m. If the gate potential
is 5 V: a) find the oxide capacitance C0; b) derive the quadratic equation for the surface potential s with
numerical coefficients. Calculate: c) the values of s from the equation; d) the voltage V0 across the
oxide; e) induced charge Qs; f) depletion layer width xd;
C0 = F/m2; (Equation for s) . . . .

=0
s (solutions of the equation) = V;
V0 = V; Qs = C; xd = m;

Make up of the First Midterm Exam. 100 min, 100 points, 5 questions,
No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) (a) A semi-infinite slab of n-type silicon is uniformly illuminated with a generation rate
of GL. Obtain the hole-continuity equation under these conditions.
(b). If the surface recombination velocity is S at x = 0, solve the new continuity equation to
show that the steady-state hole distribution is given by
x / L
p Se
p
p n ( x ) p n 0 p G L (1 )
L p S p
2.(20) The p-type semiconductor is illuminated by steady-state radiation that uniformly generates GL
electron-hole pairs/cm3s in the region L x L. The minority-carrier lifetime n is infinite. It is also
known that n(x = 2L) = 0. Find n(x = 0) (GL is a constant). Hint: n(x) and dn(x)/dx are continious
throughout the semiconductor.
3.(20) (a) From the definition of direct recombination, determine the average time an electron stays in the
conduction band and the average time the hole stays in the valence band.
(b) What is the relationship between the carrier lifetime and the average times obtained in (a)? Discuss
this relationship for intrinsic and extrinsic semiconductors.
4.(20) Show that the effective density of states Nc represents a total number of states in the conduction
band 1.2 kT wide near the edge of the conduction-band edge. Explain the physical meaning of your result.
5.(20) Find the probability of occupation of a level 0.045 eV above the coduction band edge, if the Fermi
level is 0.7 eV above the valence band, the energy gap is 1.1 eV and the temperature is 300 K. How
would you comment the result?

Make up of the Second Midterm Exam. 100 min, 100 points, 5 questions,
No partial credits
SURNAME . . . . . . . . . . . NAME . . . . . .
1.(20) (a) Ignoring the space-charge recombination currents,show that the exact expression for
the common-emitter output characteristics of a transistor is
I CO N I B I C (1 N )
VCE T ln T ln I
I EO I B I C (1 I ) N
Note: First solve explicitly for the junction voltages in terms of the currents.
(b) If IB IEO and IB ICO/N, show that the foregoing equation reduces to
1 / I I C / I B hFEI
VCE T ln
1 I C / I B hFEN
2.(20) (a) Derive an expression for the carrier concentration in the base in an npn transistor if xB and Ln
are of the same order of magnitude.
(b) Simplify the result in (a) for xB Ln to obtain
x
n p n p 0 e VE / T (1 )
xB
3.(25) Derive the small-signal ac hole distribution and diode admittance of a p+n diode if the width of
the n region Wn is of the same order as the diffusion length. Assume infinite surface recombination
velocity at x = Wn.
4.(20) Show that the maximum recombination rate occurs at p=n in the junction space-charge layer and
derive equation
n p n i e V / 2T
5.(15) A sample of Si is doped with 1017 phosphorus atoms per cm3. What is its resistivity? What Hall
voltage would you expect in a sample 100 m thick if Ix = 1 mA and Bz = 10-5 Wb/cm2. Take the mobility
equal to 700 cm-2/Vs.
EEE-210 Physical Electronics 2002-03 1

First Midterm Exam. 03.04.2003, 100 min. 100 points, 6 questions, 7 pages.
Calculations should be done in detail, step by step. Results are valid until the 2
first error. Answers should be filled in the blanks, otherwise they are not valid. No 3
partial credits.
4
5
SURNAME . . . . . . . . . . NAME . . . . .
6
1.(16) Find the resistivity i of an intrinsic Ge semiconductor at 300 K. If per each 108

host atoms 1 donor atom is present, find the electron part n of the resistivity.
i = cm; n = cm;
2.(16) Calculate the the electron and hole concentration under steady-state illumination in an n-type silicon with
GL = 1016 cm-3 s-1, Nd = 1015 cm-3, and n = p = 10 s.
n= cm-3; p= cm-3;
3.(20) An electron in GaAs has an effective mass of 0.068 m0 and a mean free path of 0.14 microns at
300 K. Find the electron mobility n. Under which electric field E the dritf velocity of electron would
be equal to their thermal velocity?
n = . . . . cm2/Vs; E = . . . . V/m ;
4.(18) Find the probability of occupation of a level 0.045 eV above the coduction band edge, if the Fermi
level is 0.7 eV above the valence band, the energy gap is 1.1 eV and the temperature is 300 K. How
would you comment the result?
FFD = . . . ;
5.(15) a)Determine the number of atoms N in a unit cell of an fcc crystal.

b) What is the distance d in units of the lattice constant a between two nearest-neighboring atoms?
c) If each atom is assumed to be a sphere and the spherical surface of each atom comes into contact with its
nearest neighbors, what percentage P of the total volume of the unit cell is occupied?
N= ; d= a; P= %;
6.(15) The lattice constant of silicon is 0.543 nm. Calculate the density of valence electrons.
D= cm-3;

Second Midterm Exam. 22.05.2003, 100 min. 100 points, 4 questions, 7 pages.
partial credits.
4
SURNAME . . . . . . . . . . NAME . . . . .
1.(15) A silicon diode operates at a forward voltage of 0.5 V. Calculate the factor F by
which the current will be multiplied when the temperature is increased from 25 to 150
C. Assume that I I0 eV/T and that I0 doubles every 6 C.
F= . . . . .
2.(48) A Si p-n junction of 50 m * 50 m area at T = 300 K has the following parameters: ND = 1017 cm-
3
,
NA = 1015 cm-3, Dn = 38 * 10 -4 m2s-1, Dp = 13 * 10 -4 m2s-1, n =50 s, p =10 s. Find: a) the saturation
current I0 and the potential difference 0; b) the depletion layer widths (Xd)-10, (Xd)+0.75 and the
corresponding parallel plate capacitances (C0)-10, (C0)+0.75 at bias voltages of v = -10 V and + 0.75 V;
c) the conductance GD and diffusion capacitance CD at V = + 0.75 v. Take ni = 1.4 * 1016 m-3.
I0 = A; 0 = V;
(Xd)-10 = m; (Xd)+0.75 = m; (C0)-10 =

F;
(C0)+0.75 = F; GD = S; CD =
F;
3.(25) A silicon npn semiconductor has the parameters: xB = 2m, NA = 5 * 1016 cm-3 in a uniformly
doped base, n = 1 s, Dn = 22 cm2/s, and A = 0.01 cm2. If the collector is reversed-biased and InE = 1
mA, calculate the the excess-electron density EED at the base side of the emitter junction, the emitter-
junction voltage VE , and the base transport factor BTF (give four significant units). What should be the
mobility of electrons n and diffusion length Ln.
Ln = m; EED = cm-3; VE =
V;
BTF = ; n =
cm2/Vs
4.(12) Sketch the following diagrams:
a. The voltage-current diagram for a tunnel diode. Show the components of a tunnel current.
b. Electron and hole currents in forward biased pn-junctions.
c. Capacitance-voltage characteristics for high and low frequencies of MOS transistors.

Final Exam. 06.06.2003, 120 min. 100 points, 5questions, 6 pages. Calculations
should be done in detail, step by step. Results are valid until the first error. 2
Answers should be filled in the blanks, otherwise they are not valid. No partial 3
credits.
4
SURNAME . . . . . . . . . . NAME . . . . . 5
1.(20) A p+n silicon diode is used as a varactor. The doping concentrations on the two

sides of the junction are Na = 1019 cm-3and Nd = 1015 cm-3, respectively. The diode area is
6.45*10-4 cm2. a) Find the diode capacitance at the reverse bias voltage of 1V. b)
Calculate the resonant frequencies of a circuit using this varactor with the inductance of 2mH.
C= pF; f= Hz;
2.(14) The concentrtation of conductance electrons in germanium at room temperature is n = 1019 m-3.
What is the persentage P of conductance electrons out of all Ge atoms.
P= %;
3.(21) The potential is given by 1.5*1013 x2 volts. The charge in semiconductor is due to a uniform
distribution of singly charged carriers. Find the concentration of carriers and space-charge density.
Indicate the polarity of carriers (electrons or holes). Take the dielectric constant as 12.
N= cm-3 ; = C/m3; Polarity

= ;
4.(15) A semiconductor is doped with Nd and has a resistance R1 ( Nd >> ni). The same semiconductor is
then doped with an unknown amount of acceptors Na (Na >> Nd), yielding a resistance of 0.5 R1. Find Na
in terms of Nd if Dn / Dp = 50.
Na = Nd.
5.(30) An ideal MOS capacitor has a 10 nm thick SiO2 layer and a p-type Si with Na = 1016 cm-3. It
operates under moderate inversion. Find: a) depletion layer width; b) voltage for moderate inversion;
c) bulk charge; d) threshold voltage; e) oxide capacitance; f) total capacitance; Take kT/q = 0.0259 v.
a) m; b) V; c)
C/cm2;
d) VT = V; e) F/cm2; f)
F/cm2;
First Midterm Exam. 08.04.2004, 100 min. 100 points, 5 questions, 7 pages.
partial credits.
4
5
SURNAME . . . . . . . . . . NAME . . . . .
1.(30) The density of state related effective mass of electrons and holes in Si are 1.08 mo and

0.56 mo, respectively. The electron and hole mobilities at the temperature 250 K are 1500 and
2 -1 -1
500 cm V s , respectively. If the band gap energy at T = 0 K is Eg(0) = 1.17 ev, find its
value at 250 K with the precision of three significant digits. Take the material constants as
= 4.73*10-4 /K2, = 636 K. Calculate the effective density of states Nc and Nv , intrinsic concentration ni and
intrinsic resistivity of Si at 250 K.
Eg (250) = ev; Nc = cm-3; Nv = cm-3;
ni = cm-3; = cm;
2.(20) A uniformly doped n-type silicon semiconductor with 1016 donor atoms per cm3 is subjected
to a boron diffusion with a constant surface concentration of 5*1018 cm-3. It is desired to to form a
pn-junction at a depth of 2.7 m. At what temperature should this diffusion be carried out if it is to
be completed in 2 hours? Find the diffusivity.
D= cm2/s; T= K;
mean thermal velocity is 4.125*105 m/s, find the electron mobility. Under what electric field the drift
velocity of electron would be equal to the mean thermal velocity.
= m2V-1s-1 ; E = V/m ;
4.(21) a) Calculate the conductivity and quasi-Fermi levels for silicon sample with Nd = 1015 cm-3, p = 1
s, and GL = 5*1019 cm-3s-1. b) Find the value of GL that produces 1015 holes/cm3. What are in this case the
conductivity and quasi-Fermi levels?
a) = ( cm)-1; Efn Ei = ev; Ei Efp = ev;
b) GL = cm-3s-1; = ( cm)-1;
Efn Ei = ev; Ei Efp = ev;

5.(9) Give the definitions for the:
a. Hall multiplier
b. Degenerate semiconductor
c. Traps

Second Midterm Exam. 20.05.2004, 100 min. 100 points, 4 questions, 8 pages.
partial credits.
4
SURNAME . . . . . . . . . . NAME . . . . .
1.(20) A silicon Schottky-barrier diode has a contact area of 0.01 cm2, and the donor
concentration in the semiconductor is 1016 cm-3. Let o =0.7 V and VR =10.3 V. Calculate
(a) the thickness xd of the depletion layer, (b) the barrier capacitance C, (c) the field
strength at the surface; (d) the field strength in the middle of the depletion layer.
(a) xd = cm; (b) C = pF;
(c) = V/cm; (d) = V/cm;

2.(25) A silicon n-channel JFET has the following parameters: Na = 1018 cm-3, Nd = 1015 cm-3, a = 2 m,
L = 20 m,, and W = 0.2 cm. Calculate (a) the built-in potential o, (b) the pinchoff voltages VPO and VP, (c)
the conductance Go, and (d) the actual channel conductance in the linear region with zero bias at the gate and
drain terminals. Take the mobility as n = 1000 cm2/Vs.
o = V; VPO = V; VP = V;
Go = S; gdl = S;
3.(40) In a silicon pnp transistor, the doping concentrations for the emitter, base, and collector are 1019,
5*1017, and 1015 cm-3. The emitter and base widths are 1 and 0.7 m, respectively, and the diffusion length
is 10 m for both electrons and holes. The collector width is 50 m and the cross-sectional area is 10-4
cm2. If nE = 130 cm2/Vs; p = 250 cm2/Vs; nC = 1500 cm2/Vs, then calculate: a) emitter injection
efficiency; b) base transport factor; c) normal alpha; d) common emitter current gain; e) collector
injection efficiency; f) inverse alpha; g) IE0; h) IC0; i) collector-emitter voltage VCE at saturation at IC = 1
mA and IB = 100A. Use four significant digits in answers.
a) = ; b) = ; c) =
;
d) = ; e) = ; f) =
;
g) IE0 = A ; h) IC0 = A ; i) VCE =

V;
4.(15) Give the definition for the:
a) electron affinity
b) Schottky barrier
c) Heterojunction
d) Normally off or enhancement FET
e) Pinchoff curve
4.(15) Give the definition for the:

a) electron affinity
The electron affinity is the energy required to release an electron from the bottom of the conduction band to the vacuum level.
b) Schottky barrier
The Schottky barrier is the rectifying metal-semiconductor contact.
c) Heterojunction
A heterojunction is a junction formed by two semiconductor materials.
d) Normally off or enhancement FET

Normally off or enhancement FET is a FET with a lightly doped narrow channel in which the pinchoff happens at zero gate bias so
that it is necessary to apply a positive gate bias to induce a channel.
e) Pinchoff curve
The pinchoff curve separates the linear and saturation regions in a junction field effect transistor.

Final Exam. 9.06.2004, 120 min. 100 points, 6 questions, 8 pages. Calculations
should be done in detail, step by step. Results are valid until the first error. 2
Answers should be filled in the blanks, otherwise they are not valid. No partial 3
credits.
4
5
SURNAME . . . . . . . . . . NAME . . . . .
6
1.(20) If we apply 500 mV to the contacts 3 and 4 of a semiconductor bar of a given

sizes
(50 mil * 10 mil * 4 mil), the current of 1 mA would flown through it. When additionally we
turn on the magnetic field of Bz = 10-4 Wb/cm2, then the induced Hall voltage is 10 mV. Find the doping
concentration n and taking into account the presence of the ionized impurity scattering calculate the mobility
of electrons. 1 mil = 1 inch*10-3.
n= cm-3; = cm2/Vs;
2.(10) Sketch the two-dimensional diagram of a silicon lattice if you project all the atoms onto (a) the (111)
plane,
(b) the (110) plane.
3.(15) Determine the resistance to the lateral current flow of thin film semiconductor stripes of dimension
(length*width) 100*10 microns; 200*20 microns; 100*6 microns, if the sheet resistance is 60 ohms/unit
area.
R100*10 = ; R200*20 = ; R100*6 = ;

4.(11) If the lattice constant of silicon were 0.700 nm what would be the density of valence electrons.
The density of valence electrons = cm-3;
5.(20) In n-type germanium with ni = 2.5 * 1019 m-3 and ND = 1022 m-3, a flash of light doubles the hole
number
density. Calculate the generation rate GL and the time t taken for the hole density to decay to 8 * 1016 m-3 if
the hole lifetime is 3 ms.
t = ms; GL = m-3s-1;
6.(24) (a) Sketch the energy band diagram for an ideal Schottky barrier with qm = 4.8 eV and qs = 4.05 eV.
For Nd = 1015 cm-3 calculate: (a1) the barrier height, (a2) the built-in potential, and (a3) the space charge width.
(b) Repeat (a) for Na = 1015 cm-3. Take kT = 0.026 eV. Use three significant digits and indicate all the
physical designations in answers. Show all numerical data on the pictures.
(a1) = eV; (a2) = V; (a3) =

m ;
(b1) = eV; (b2) = V; (b3) =

m ;
First Midterm Exam. 05.04.2005, 100 min. 100 points, 6 questions, 8 pages. Calculations
should be done in detail, step by step. Results are valid until the first error. Answers 2
should be filled in the blanks, otherwise they are not valid. No partial credits. Indicate 3
all data taken from formula sheet.
4
5
SURNAME . . . . . . . . . . NAME . . . . .
6
1.(16) In gallium arsenide both Nc and Nv vary with temperature. Assuming the bandgap ene
is 1.42 eV and does not vary with temperature over the range of T = 300 K and T = 450 K
calculate the intrinsic carrier concentration at these temperatures. Take kT (300 K) = 0.0259 eV
a) ni(300 K) = cm-3; b) ni(450 K) = cm-3;

2.(12) A silicon wafer is doped with 1015 phosphorus atoms/cm-3. Determine the probability P that an energy
level 3 kT above the Fermi energy is occupied by an electron at: a) T = 300 K; b) T = 250 K.
a) P300K = %; b) P250K = %;
3.(15) Consider silicon at T = 300 K. The Fermi energy is 0.25 eV below the conduction band. Calculate the
intrinsic carrier concentration (ICC) and the thermal equilibrium concentration of ionized donor and acceptor
atoms.
Nd = cm-3; Na = cm-3; (ICC) =

cm-3;
4.(20) A uniformly doped n-type silicon semiconductor with 1016 donor atoms per cm3 is subjected to a
boron diffusion with a constant surface concentration of 5*1018 cm-3. It is desired to to form a pn-junction
at a depth of 2.7 m. At what temperature should this diffusion be carried out if it is to be completed in 2
hours? Find the diffusivity.
D= cm2/s; T= K;
mean thermal velocity is 4.125*105 m s-1, find the electron mobility. Under which electric field the drift
velocity of electron would be equal to the thermal velocity.
= m2V-1s-1 ; E = V/m ;
6.(21) In a silicon pn junction at T = 300 K the intercept of the curve per each 1 cm2 of area gives 0 =
0.855 volt. The slope is 1.32*1015 F-2V-1. Calculate the net concentration of impurities in both sides of
junction. Can we assume that the junction is or is not one sided? Describe why? Underline the
necessary. Take kT (300 K) = 0.0259 eV.
a) Na = cm-3; b) Nd = cm-
3
;
yes
c) The junction is one sided
no

EEE210 (Physical Electronic)

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EEE-210 Physical Electronics

2.(20)Find the resistance of some semiconductor, 100 m long and 5 m2 in cross-section, if it is

D=. . . . . .cm2/s; T=. . . . K;

2.(20)Find the resistance of some semiconductor, 100 m long and 5 m2 in cross-section, if it is

D=. . . . . .cm2/s; T=. . . . K;