PNP SILICON PLANAR

ZTX749 MEDIUM POWER TRANSISTOR ZTX749

ISSUE 1 APRIL 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). FEATURES
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 25 Volt VCEO
* 2 Amp continuous current
Transition fT 100 160 MHz IC=-100mA,
Frequency VCE=-5V f=100MHz * Low saturation voltage

Output Cpacitance Cobo 55 100 pF VCB=-10V f=1MHz C

B
E
Switching Times ton 40 ns IC=-500mA, E-Line
VCC=-10V
TO92 Compatible
toff 450 ns IB1=IB2=-50mA
ABSOLUTE MAXIMUM RATINGS.
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
THERMAL CHARACTERISTICS Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
PARAMETER SYMBOL MAX. UNIT
Power Dissipation at Tamb=25C Ptot 1 W
derate above 25C 5.7 mW/ C
Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 C/W
Junction to Ambient2 Rth(j-amb)2 116 C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 C
Junction to Case Rth(j-case) 70 C/W
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base V(BR)CBO -35 V IC=-100 A, IE=0
Breakdown Voltage
Collector-Emitter V(BR)CEO -25 V IC=-10mA, IB=0*
Breakdown Voltage
2.5 200
Emitter-Base V(BR)EBO -5 V IE=-100 A, IC=0
Max Power Dissipation - (Watts)

Breakdown Voltage
Thermal Resistance (C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP
C
as Collector Cut-Off ICBO -0.1 A VCB=-30V
1.5
e
te tP Current -10 A VCB=-30V,T amb =100C
m
pe 100 D=0.5
ra
tu Emitter Cut-Off Current IEBO -0.1 A VEB=-4V, IE=0
1.0 Am re
bie
nt t
em
per D=0.2 Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA*
0.5 at u Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA*
re D=0.1
Single Pulse

0 0 Base-Emitter VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA*

-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
Saturation Voltage
T -Temperature (C) Pulse Width (seconds)
Base-Emitter VBE(on) -0.8 -1 V IC=-1A, VCE=-2V*
Derating curve Maximum transient thermal impedance Turn-On Voltage
Static Forward Current hFE 70 200 IC=-50mA, VCE=-2V*
Transfer Ratio 100 200 300 IC=-1A, VCE=-2V*
75 150 IC=-2A, VCE=-2V*
15 50 IC=-6A, VCE=-2V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

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 PNP SILICON PLANAR
ZTX749 MEDIUM POWER TRANSISTOR ZTX749
ISSUE 1 APRIL 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). FEATURES
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 25 Volt VCEO
* 2 Amp continuous current
Transition fT 100 160 MHz IC=-100mA,
Frequency VCE=-5V f=100MHz * Low saturation voltage

Output Cpacitance Cobo 55 100 pF VCB=-10V f=1MHz C

B
E
Switching Times ton 40 ns IC=-500mA, E-Line
VCC=-10V
TO92 Compatible
toff 450 ns IB1=IB2=-50mA
ABSOLUTE MAXIMUM RATINGS.
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO -35 V
Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -5 V
THERMAL CHARACTERISTICS Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
PARAMETER SYMBOL MAX. UNIT
Power Dissipation at Tamb=25C Ptot 1 W
derate above 25C 5.7 mW/ C
Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 C/W
Junction to Ambient2 Rth(j-amb)2 116 C/W Operating and Storage Temperature Range Tj:Tstg -55 to +200 C
Junction to Case Rth(j-case) 70 C/W
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base V(BR)CBO -35 V IC=-100 A, IE=0
Breakdown Voltage
Collector-Emitter V(BR)CEO -25 V IC=-10mA, IB=0*
Breakdown Voltage
2.5 200
Emitter-Base V(BR)EBO -5 V IE=-100 A, IC=0
Max Power Dissipation - (Watts)

Breakdown Voltage
Thermal Resistance (C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP
C
as Collector Cut-Off ICBO -0.1 A VCB=-30V
1.5
e
te tP Current -10 A VCB=-30V,T amb =100C
m
pe 100 D=0.5
ra
tu Emitter Cut-Off Current IEBO -0.1 A VEB=-4V, IE=0
1.0 Am re
bie
nt t
em
per D=0.2 Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA*
0.5 at u Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA*
re D=0.1
Single Pulse

0 0 Base-Emitter VBE(sat) -0.9 -1.25 V IC=1A, IB=-100mA*

-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
Saturation Voltage
T -Temperature (C) Pulse Width (seconds)
Base-Emitter VBE(on) -0.8 -1 V IC=-1A, VCE=-2V*
Derating curve Maximum transient thermal impedance Turn-On Voltage
Static Forward Current hFE 70 200 IC=-50mA, VCE=-2V*
Transfer Ratio 100 200 300 IC=-1A, VCE=-2V*
75 150 IC=-2A, VCE=-2V*
15 50 IC=-6A, VCE=-2V*
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%

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 ZTX749
TYPICAL CHARACTERISTICS
td
tr
1.8 tf
ns IB1=IB2=IC/10
1.6 160 VCE=-10V

1.4 ts
140

Switching time
ns
1.2 1200 120
ts
VCE(sat) - (Volts)

1.0 1000 100

tf
0.8 80

0.6 600 60
IC/IB=100
0.4 40
tr td
0.2 200 20
IC/IB=10
0 0
0.001 0.01 0.1 1 10 0.01 0.1 1

IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC Switching Speeds

1.2

200 1.0

VCE=2V
VBE(sat) - (Volts)
hFE - Gain

160 IC/IB=10
0.8

120
0.6 IC/IB=100
80
0.4

40
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10

IC - Collector Current (Amps) IC - Collector Current (Amps)

hFE v IC VBE(sat) v IC

Single Pulse Test at Tamb=25C

10
1.2
IC - Collector Current (Amps)

1.0
1.0
VCE=2V
VBE - (Volts)

0.8
D.C.
1s
100ms
0.6 10ms
0.1 1.0ms

0.4

0.001 0.01 0.1 1 10

0.01
1 10 100
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)

VBE(on) v IC Safe Operating Area

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