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APM4550J

Dual Enhancement Mode MOSFET (N- and P-Channel)

Features Pin Description

N-Channel
30V/8A,
RDS(ON) = 20m (typ.) @ VGS = 10V
RDS(ON) = 30m (typ.) @ VGS = 4.5V
P-Channel
Top View of DIP 8
-30V/-7A,
RDS(ON) = 40m (typ.) @ VGS = -10V
RDS(ON) = 62m (typ.) @ VGS = -4.5V D1 D1 S2

Super High Dense Cell Design


Reliable and Rugged
Lead Free Available (RoHS Compliant) G2

G1

Applications
S1 D2 D2
Power Management in Notebook Computer,
Portable Equipment and Battery Powered N-Channel P-Channel
Systems

Ordering and Marking Information


APM4550 Package Code
J : DIP-8
Lead Free Code Operating Junction Temp. Range
Handling Code C : -55 to 150C
Temp. Range Handling Code
Package Code TU : Tube
Lead Free Code
L : Lead Free Device

APM4550J : APM4550 XXXXX - Date Code


XXXXX

Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.

Copyright ANPEC Electronics Corp. 1 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Absolute Maximum Ratings (TA = 25C unless otherwise noted)

Symbol Parameter N Channel P Channel Unit


VDSS Drain-Source Voltage 30 -30
V
VGSS Gate-Source Voltage 20 20
ID* Continuous Drain Current 8 -7
VGS=10V A
IDM* 300s Pulsed Drain Current 30 -30
IS* Diode Continuous Forward Current 2.5 -2 A
TJ Maximum Junction Temperature 150
C
TSTG Storage Temperature Range -55 to 150
TA=25C 2.5
PD* Power Dissipation W
TA=100C 1
RJA* Thermal Resistance-Junction to Ambient 50 C/W
Note: *Surface Mounted on 1in pad area, t 10sec.
2

Electrical Characteristics (TA = 25C unless otherwise noted)

APM4550J
Symbol Parameter Test Condition Unit
Min. Typ. Max.

Static Characteristics
Drain-Source Breakdown VGS=0V, IDS=250A N-Ch 30
BVDSS V
Voltage VGS=0V, IDS=-250A P-Ch -30
VDS=24V, VGS=0V 1
N-Ch
Zero Gate Voltage Drain TJ=85C 30
IDSS A
Current VDS=-24V, VGS=0V -1
P-Ch
TJ=85C -30
VDS=VGS, IDS=250A N-Ch 1 1.5 2
VGS(th) Gate Threshold Voltage V
VDS=VGS, IDS=-250A P-Ch -1 -1.5 -2
N-Ch 100
IGSS Gate Leakage Current VGS=20V, VDS=0V nA
P-Ch 100
VGS=10V, IDS=8A N-Ch 20 27.5

a Drain-Source On-State VGS=-10V, IDS=-7A P-Ch 40 50


RDS(ON) m
Resistance VGS=4.5V, IDS=5A N-Ch 30 40
VGS=-4.5V, IDS=-4A P-Ch 62 80

Copyright ANPEC Electronics Corp. 2 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Electrical Characteristics (Cont.) (TA = 25C unless otherwise noted)

APM4550J
Symbol Parameter Test Condition Unit
Min. Typ. Max.

Diode Characteristics
a ISD=2.5A, V GS=0V N-Ch 0.8 1.3
VSD Diode Forward Voltage V
ISD=-2A, V GS=0V P-Ch -0.8 -1.3
N-Channel N-Ch 16
trr Reverse Recovery Time ns
ISD=8A, dlSD/dt=100A/s P-Ch 15
Reverse Recovery N-Channel N-Ch 9
Q rr nC
Charge ISD=-7A, dlSD/dt=100A/s P-Ch 6
b
Dynamic Characteristics
N-Ch 2
RG Gate Resistance VGS=0V,V DS=0V,F=1MHz
P-Ch 8.3
N-Channel N-Ch 620
C iss Input Capacitance VGS=0V,
VDS=15V, P-Ch 600
Frequency=1.0MHz N-Ch 90
C oss Output Capacitance pF
P-Channel P-Ch 100
VGS=0V, N-Ch 70
Reverse Transfer VDS=-15V,
C rss
Capacitance Frequency=1.0MHz P-Ch 75
N-Ch 6 11
td(ON) Turn-on Delay Time N-Channel
VDD=15V, R L=15, P-Ch 8 14
IDS=1A, V GEN=10V, N-Ch 10 18
Tr Turn-on Rise Time R G=6
P-Ch 12 22
ns
N-Ch 22 40
td(OFF) Turn-off Delay Time P-Channel
VDD=-15V, R L=15, P-Ch 27 50
IDS=-1A, V GEN=-10V, N-Ch 3 6
Tf Turn-off Fall Time R G=6
P-Ch 14 25
b
Gate Charge Characteristics
N-Channel N-Ch 14 19
Qg Total Gate Charge
VDS=15V, V GS=10V, P-Ch 12 16
IDS=8A
N-Ch 1.3
Q gs Gate-Source Charge nC
P-Channel P-Ch 1.1
VDS=-15V, V GS=-10V,
IDS=-7A N-Ch 3.2
Q gd Gate-Drain Charge
P-Ch 2.8
Notes:
a : Pulse test ; pulse width 300s, duty cycle 2%.
b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp. 3 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Typical Characteristics
N-Channel
Power Dissipation Drain Current
3.0 10

2.5
8

ID - Drain Current (A)


2.0
Ptot - Power (W)

1.5

4
1.0

2
0.5

o o
TA=25 C TA=25 C,VG=10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C) Tj - Junction Temperature (C)

Safe Operation Area Thermal Transient Impedance


100 2
Normalized Transient Thermal Resistance

1 Duty = 0.5

0.2
it
Lim

10
ID - Drain Current (A)

0.1
n)
s(o
Rd

0.05
300s 0.1
0.02
1ms
1 0.01
10ms
100ms
Single Pulse
1s 0.01
0.1
DC

2
Mounted on 1in pad
O
TA=25 C o
RJA : 50 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. 4 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Typical Characteristics (Cont.)


N-Channel
Output Characteristics Drain-Source On Resistance
30 50
VGS= 4.5,5,6,7,8,9,10V
27 4V 45

RDS(ON) - On - Resistance (m)


24 40
21 VGS=4.5V
ID - Drain Current (A)

35
18
30
15 3.5V
25
12 VGS=10V
20
9

6 3V 15

3 10
2.5V
0 5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30

VDS - Drain-Source Voltage (V) ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage


50 1.6
ID=8A IDS=250
45 1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)

40 1.2

35 1.0

30 0.8

25 0.6

20 0.4

15 0.2

10 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. 5 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Typical Characteristics (Cont.)


N-Channel
Drain-Source On Resistance Source-Drain Diode Forward
2.00 30
VGS = 10V
1.75 IDS = 8A
Normalized On Resistance

10
o
1.50 Tj=150 C

IS - Source Current (A)


1.25

1.00 o
Tj=25 C
1
0.75

0.50

0.25
o
RON@Tj=25 C: 20m
0.00 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V)

Capacitance Gate Charge


900 10
Frequency=1MHz VDS=15V
800 9 IDS=8A
VGS - Gate - source Voltage (V)

700 8

7
C - Capacitance (pF)

Ciss
600
6
500
5
400
4
300
3
200
2
Coss
100 1
Crss
0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12 14

VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. 6 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Typical Characteristics (Cont.)


P-Channel
Power Dissipation Drain Current
3.0 8

7
2.5

-ID - Drain Current (A)


2.0
Ptot - Power (W)

1.5 4

3
1.0
2
0.5
1
o o
TA=25 C TA=25 C,VG=-10V
0.0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160

Tj - Junction Temperature (C) Tj - Junction Temperature (C)

Safe Operation Area Thermal Transient Impedance


100 2
Normalized Transient Thermal Resistance

1 Duty = 0.5

0.2
it
Lim

10
-ID - Drain Current (A)

0.1
n)
s(o
Rd

0.05
300s 0.1
1ms 0.02
1
0.01
10ms
100ms
Single Pulse
0.01
1s
0.1
DC

2
Mounted on 1in pad
O o
TA=25 C RJA : 50 C/W
0.01 1E-3
0.01 0.1 1 10 100 1E-4 1E-3 0.01 0.1 1 10 30

-VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)

Copyright ANPEC Electronics Corp. 7 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Typical Characteristics (Cont.)


P-Channel
Output Characteristics Drain-Source On Resistance
30 100
VGS=-6,-7 -8,-9,-10V -5V
27 90 VGS=-4.5V

RDS(ON) - On - Resistance (m)


24 -4.5V
80
21
-ID - Drain Current (A)

-4V 70
18
60
15 -3.5V
50 VGS=-10V
12
40
9 -3V
30
6
-2.5V 20
3

0 10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30

-VDS - Drain - Source Voltage (V) -ID - Drain Current (A)

Drain-Source On Resistance Gate Threshold Voltage


100 1.6
ID=-7A IDS= -250
90 1.4
Normalized Threshold Voltage
RDS(ON) - On - Resistance (m)

80 1.2

70 1.0

60 0.8

50 0.6

40 0.4

30 0.2

20 0.0
2 3 4 5 6 7 8 9 10 -50 -25 0 25 50 75 100 125 150

-VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C)

Copyright ANPEC Electronics Corp. 8 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Typical Characteristics (Cont.)


P-Channel
Drain-Source On Resistance Source-Drain Diode Forward
2.0 20
VGS = -10V
1.8 IDS = -7A 10
Normalized On Resistance

1.6

-IS - Source Current (A)


o
1.4 Tj=150 C

1.2 o
Tj=25 C
1.0 1

0.8

0.6

0.4
o
RON@Tj=25 C: 40m
0.2 0.1
-50 -25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

Tj - Junction Temperature (C) -VSD - Source - Drain Voltage (V)

Capacitance Gate Charge


800 10
Frequency=1MHz VDS= -15V
9 IDS= -7A
700
-VGS - Gate - source Voltage (V)

8
600 Ciss
7
C - Capacitance (pF)

500
6

400 5

4
300
3
200
2
Coss
100
Crss 1

0 0
0 5 10 15 20 25 30 0 2 4 6 8 10 12

-VDS - Drain - Source Voltage (V) QG - Gate Charge (nC)

Copyright ANPEC Electronics Corp. 9 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Package Information

DIP-8
D

E1

E
A2

0.38
A1

D1 b e c eA

b2 eB

S DIP-8
Y
M MILLIMETERS INCHES
B
O
L MIN. MAX. MIN. MAX.
A 5.33 0.210
A1 0.38 0.015
A2 2.92 4.95 0.115 0.195
b 0.36 0.56 0.014 0.022
b2 1.14 1.78 0.045 0.070
c 0.20 0.35 0.008 0.014
D 9.01 10.16 0.355 0.400
D1 0.13 0.005
E 7.62 8.26 0.300 0.325
E1 6.10 7.11 0.240 0.280
e 2.54 BSC 0.100 BSC
eA 7.62 BSC 0.300 BSC
eB 10.92 0.430
L 2.92 3.81 0.115 0.150

Copyright ANPEC Electronics Corp. 10 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Physical Specifications
Terminal Material Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn
Lead Solderability Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition (IR/Convection or VPR Reflow)

TP tp
Critical Zone
T L to T P
Ramp-up

TL
tL
Temperature

Tsmax

Tsmin
Ramp-down
ts
Preheat

t 25 C to Peak
25

Tim e
Classification Reflow Profiles
Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly
Average ramp-up rate
3C/second max. 3C/second max.
(TL to TP)
Preheat
100C 150C
- Temperature Min (Tsmin)
150C 200C
- Temperature Max (Tsmax)
60-120 seconds 60-180 seconds
- Time (min to max) (ts)
Time maintained above:
183C 217C
- Temperature (TL)
60-150 seconds 60-150 seconds
- Time (tL)
Peak/Classification Temperature (Tp) See table 1 See table 2
Time within 5C of actual
10-30 seconds 20-40 seconds
Peak Temperature (tp)
Ramp-down Rate 6C/second max. 6C/second max.
Time 25C to Peak Temperature 6 minutes max. 8 minutes max.

Notes: All temperatures refer to topside of the package. Measured on the body surface.

Copyright ANPEC Electronics Corp. 11 www.anpec.com.tw


Rev. A.1 - May, 2007
APM4550J

Classification Reflow Profiles (Cont.)


Table 1. SnPb Eutectic Process Package Peak Reflow Temperatures
3 3
Volume mm Volume mm
Package Thickness
<350 350
<2.5 mm 240 +0/-5C 225 +0/-5C
2.5 mm 225 +0/-5C 225 +0/-5C
Table 2. Pb-free Process Package Classification Reflow Temperatures
3 3 3
Volume mm Volume mm Volume mm
Package Thickness
<350 350-2000 >2000
<1.6 mm 260 +0C* 260 +0C* 260 +0C*
1.6 mm 2.5 mm 260 +0C* 250 +0C* 245 +0C*
2.5 mm 250 +0C* 245 +0C* 245 +0C*
* Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated
classification temperature (this means Peak reflow temperature +0C. For example 260C+0C) at the rated MSL
level.

Reliability Test Program


Test item Method Description
SOLDERABILITY MIL-STD-883D-2003 245C, 5 SEC
HOLT MIL-STD-883D-1005.7 1000 Hrs Bias @125C
PCT JESD-22-B,A102 168 Hrs, 100%RH, 121C
TST MIL-STD-883D-1011.9 -65C~150C, 200 Cycles
ESD MIL-STD-883D-3015.7 VHBM > 2KV, VMM > 200V
Latch-Up JESD 78 10ms, 1tr > 100mA

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050

Taipei Branch :
7F, No. 137, Lane 235, Pao Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

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Rev. A.1 - May, 2007