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Kriti Tyagi
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Solid State Communications 207 (2015) 2125
art ic l e i nf o a b s t r a c t
Article history: Copper selenide (Cu2Se) based materials are currently being investigated globally for efcient photo-
Received 13 December 2014 voltaic and thermoelectric (TE) device applications. Despite having enormous device potential its crystal
Received in revised form structure and mechanical properties are still not fully explored owing to its complex behavior.
23 December 2014
Stereographic projection is one of such useful tools to estimate the crystallography of the material
Accepted 5 February 2015
conclusively. In the current study, the crystal structure of and -phases of Cu2Se was determined by its
Communicated by T. Kimura
Available online 12 February 2015 stereographic projections in reciprocal space. Further, mechanical properties of Cu2Se are highly
important to avoid catastrophic failure and ensure longevity of the TE devices made out of these
Keywords: materials. Cu2Se exhibited the compressive strength of 45 MPa with 3% of plastic strain and a
A. Semiconductor
fracture toughness value of 2 70.02 MPam, the latter being signicantly higher than that of the
C. Scanning and transmission electron
other known TE materials. Finally, thermal shock resistance, which is one of the crucial parameters for
microscopy
D. Mechanical properties the stability and longevity of the device applications, was calculated to be 281 712 W m 1. Superior
D. Phase transitions mechanical properties coupled with highly reported thermoelectric behavior makes Cu2Se as a potential
candidate for green energy generation.
& 2015 Elsevier Ltd. All rights reserved.
1. Introduction all the available literature on Cu2Se unanimously conrms that the
high temperature phase exists as [3,9,10], while quandary still
The development of promising power generation methods that exists over the low temperature -phase of Cu2Se. Various groups
are eco-friendly in nature require special attention to meet the [2,3,9] have already reported different crystal structures for Cu2Se
global needs of large power usage [1]. The direct conversion of predicting that the low temperature phase is either monoclinic,
heat into electrical energy based on thermoelectric (TE) effect orthorhombic or tetragonal at room temperature ( 25 1C). But
without moving parts in the device is an attractive alternative for still there are many debates unresolved over the crystal structure
power generation [2]. The performance of a thermoelectric device of Cu2Se. Hence, there is a need to address the existence of
depends on its gure-of-merit (ZT), a dimensionless quantity of the -phase in Cu2Se at low temperature with suitable supporting
material dened as ZT (2), where , , T and are Seebeck characterization techniques. Moreover, in the -phase of Cu2Se,
coefcient, electrical conductivity, temperature and thermal con- the surface migration of Cu ions as well as evaporation of
ductivity, respectively. The optimization of ZT clearly demands elemental Se limits the precise control over the nal composition.
high TE power and electrical conductivity but having low thermal Furthermore, it is desired to have complete crystallographic
conductivity values. It is known that these three physical quan- information of state-of-art TE materials prior to device fabrication
tities (, and T) of materials are correlated in such a way that the to ensure that these materials are strong enough to operate in the
optimization of one adversely affects the other. Among several temperature range 500600 K useful for automobiles. Conse-
other available TE materials, Cu2Se has been designated as one of quently, these materials have to withstand high internal thermal
the most promising materials for TE power generation, due to its stresses created due to rapid temperature cycling gradients of two
high ZT value [28] in spite of its complex crystal structure. ends of the same TE element. Many of the existing TE materials are
Further, it has been reported in literature that phase transition in strong enough in thermoelectric performance, but poor at their
Cu2Se occurs from monoclinic ()-cubic () at 413 K [2,9]. But, mechanical strength. Hence, the mechanical facets of these TE
materials are also to be addressed properly. Very few reports are
available on mechanical properties of other state-of-the art TE
n
Corresponding author. Tel.: 91 11 4560 9455x9456; fax: 91 11 4560 9310. materials, such as, n-type nanostructured SiGe alloys [11], Co4Sb12
E-mail address: adhar@nplindia.org (A. Dhar). [12], In0.1Co4Sb12 [12] and Bi2Te3 0.1 vol% SiC [13]. But for Cu2Se,
http://dx.doi.org/10.1016/j.ssc.2015.02.004
0038-1098/& 2015 Elsevier Ltd. All rights reserved.
22 K. Tyagi et al. / Solid State Communications 207 (2015) 2125
2. Experimental details
Table 1
Lattice parameters and space groups of Cu2Se available in literature are compared to the current study.
Cu2Se Monoclinic (low temperature) C2/c a 14.087 , b 20.481 , c 4.145 , 90.381 Murray et al. [14]
Cu2Se Cubic (high temperature) Fm 3m a 5.787 Milat et al. [15]
Cu2Se Monoclinic C2/c a 7.1379 , b 12.3823 , c 27.3904 , 94.3081 Gulay et al. [9]
Cu2Se Monoclinic C2/c a 7.14 , b 12.39 , c 27.33 , 94.401 This work
Fig. 2. Stereographic projection along 010 for a monoclinic crystal with space
group C2/c.
Fig. 5. Reciprocal space along different UVW for a face centered cubic crystal
structure.
Fig. 7. Stressstrain curve of bulk p-type Cu2Se tested under uniaxial compression
mode with a strain rate of 2 10 5 s 1.
and we take the credit of reporting for the rst time for Cu2Se system. [18] P.H. Ngan, D.V. Christensen, G.J. Snyder, L.T. Hung, S. Linderoth, N.V. Nong,
Mechanical properties of Cu2Se could be improved further by nanos- N. Pryds, Phys. Status Solidi (a) 211 (2014) 917.
[19] A.P. Gonalves, C. Godart, Eur. Phys. J. B 87 (2014) 129.
tructuring methodology. Superior mechanical properties coupled with [20] G. Anstis, P. Chantikul, B.R. Lawn, D. Marshall, J. Am. Ceram. Soc. 64 (1981)
high photovoltaic and thermoelectric performances of Cu2Se makes it 533538.
as a potential candidate material for green energy generation. [21] O.L. Anderson, J. Phys. Chem. Solids 24 (1963) 909917.
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This work was supported by CSIR-TAPSUN (CSIR-NWP 54) [26] J.R. Sootsman, J. He, V.P. Dravid, S. Ballikaya, D. Vermeulen, C. Uher,
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