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RF Parallel-Plate
13.56 ~ plasma Reactor
MHz
wafers
Sputtering
Plasma generates (1) Ions
(2) Activated neutrals
(2) Electron
-bias
Cyclotron Pressure
Resonance pump1mTorr 10mTorr
bias~ 1kV
(ECR)
REMOVAL of
surface film
and DEPOSITION
of plasma reaction
products can
occur
simultaneously
gas flow
5
1
Substrate
Example
mask
Difficult to RIE Al-Cu
Al-Cu Metal
alloy with high Cu content
Do not want CuCl residues
H v
P P0 e kT
Example
P
1500oC Difficult to RIE Al-Cu
alloy with high Cu content
AlCl3
CuCl
1~2% typical
[Al-Cu alloy]
200oC 1/T
Cl2 as etching gas.
Examples
For etching Si Use CF4 gas
*
CF4 F CF3
*
CF4 e CF F 2e
3
*
Si 4F SiF4
F* are Fluorine atoms with electrons
Aluminum
+ *
CCl4 e CCl3 Cl 2e
*
Al 3Cl AlCl3
Photoresist
COx
C x H y Oz O2
HOx
Photoresist
on top of Si
Si
Reason: F *
H HF F *
content
SiF 4
Professor N Cheung, U.C. Berkeley 16
EE143 F2010 Lecture 15
Rates Reason:
Si
(1)O CF x COF x F *
1
2
F * increases Si etching rate
( 2 )Si O 2 SiO 2 rate
SiO2
%O2 in CF4
Poly-Si
Oxide
Control
variable
effect
Q1
R1 A1e kT
R= etching rates
A = proportional constants
Q2 Q = activation energies
R2 A2 e kT
R1 A1 Q1 Q2 kT
S e
R2 A2
S
77oK if Q1<Q2
1/T
2 Cl2-based RIE
1 BCl3 P.R.
native Al2O3
Al
Al Al
mask mask
ballooning
Si
trenching
by-product
residue
ideal problems
Professor N Cheung, U.C. Berkeley 22
EE143 F2010 Lecture 15
Ballooning:
Use chemistry with a good sidewall inhibitor.
Trenching:
-Use high pressure to increase ion-neutral scattering
(ion trajectory less directional)
Bottom Roughness:
Increase vapor pressure of etching byproduct.
A better Solution:
Multiple step RIE sequence
EE243S2010 Lec22 26
Professor N Cheung, U.C. Berkeley
EE143 F2010 Lecture 15
Wsmall
Wlarge
RIE Lag
* smaller trenches etch at a slower rate than larger trenches.
CCl2F2/O2 RIE
30
Professor N Cheung, U.C. Berkeley
EE143 F2010 Lecture 15