Chapter # 18 ELECTRONICS

Q1- How does the motion of an electron in n-type substance differ from the
motion of holes in a p-type substance ?

Ans When a battery is connected to n-type electrons drift towards +ve end
while in p-type material holes drift towards ve end of the battery moreover,
electron in the n-type substance move in the conduction band where as holes
in the p-type substance shift atom to atom in the valance band and mobility
of electrons is greater than holes.

Q2- What is the net charge on a n-type or a p-type substance ?

Ans Net charge on n-type and p-type substances is zero because they are
electrically neutral i-e all atoms are neutral.

Reasons: As we know that n-type substance is formed when a small amount

of pentavalent impurity is added to pure semiconductors and p-type is
formed when trivalent impurity added as all atoms in both substances are
electrically neutral so net charge on both is zero.

Q3- The anode of a dicode is 0.2 positive with respect to its cathode is it
forward biased ?

Ans Yes it is forward biased.

Reasons: We know that when the anode (p-side) is positive with respect to its
cathode (n-side) it is said to be forward biased. In case of si, vB =0.7 and for
Ge, vB =0.3V So diode will not conduct in case of Ge or Si.

Q4- Why charge carriers are not present in the depletion region ?

Ans N-type substances contain free electrons as majority charge carriers and
p-type contains holes when electron from n-region diffuses into P-region, and
recombines with hole a negative ion is formed, leaving behind a positive ion
So no charge carriers are available in this region though it contain immobile
positive and negative ions.

Q5- What is the effect of forwards and reverse biasing of a diode on the width
of depletion region?
Ans When the Pn-junction diode is forward biased, the width of depletion
region reduce. In other words, barrier potentials is reduced which allows
current to flow across the junction.

2- When diode is reversed biased, the width of depletion region increased b/c
majority carriers are pulled away from the junction.

Q6- Why ordinary silicon do not emit light ?

Ans 1- It is opaque to light.

2- It emit energy in the form of electromagnetic radiation having wavelength

greater than visible spectrum. So for the emission of visible light, the diode
must be specially designed.

Q7- Why a photo diode is operated in reverse biased state ?

Ans Photo diode is used for the detection of light. In reverse biased state the
reverse current is almost negligible when light falls on it electrons holes
pairs are created in the deflection region and reverse current starts flowing
which increases with the intensity of light. If its operated in forwards biased
it will conduct weather light falls on it or not. So light cant be detected with
the help of a photodiode if it forward biased.

Q8- Why is the base current in a transistor very small ?

Ans The base current in a transistor is small due to following reasons.

1- It is lightly doped.
2- Base is very thin (10-6m) as compared to emitter or collector.
3- It has only small no of charge carriers to recombine with base and
majority of charge carriers are attracted towards the collector.

Ic = IE VCC>>VBB

IE = Ic +IB

IB = IE - Ic
So IB is very small.

Q9- What is the biasing requirement of the junctions of a transistor for its
normal operation? Explain how these requirements are met in a common
emitter amplifier ?

Ans For normal operation of a transistor,

1- Emitter base junction is forward biased and

2- Collector base junction is reverse biased

In common emitter amplifiers VBB is connected across base and emitter

forward biasing and VCC connected across collector and emitter for reverse
biasing.

Please insert diagram

Q10- What is the principle of virtual
I can ground ?diagram
not made Apply it to find the gain of an
inverting amplifier ?

Ans Potential difference between two input terminals of the op-amp is

negligibly small, it means that there is no potential difference between two
input terminals i-e V+= V-. If one of the input terminals is ground (at Ov) then
other input terminal is considered to be ground which is the principle of
virtual ground.

Please insert diagram

I can not made diagram

Gain of an inverting amplifier from figure, current through R1

Viv Vio Vi
= =
I1 = R1 R1 R1

Similarly current through R2

 V 2Vo V 2o Vo
= =
I2= R2 R2 R2 as practically no current flows between (-) and (+)

terminals, so according to Kirchhoffs rule

Vi Vo
=
I1=I2 Or R1 R2

Vo R 2 Vo
= As
Vi R 1 Vi is defined as gain thus, G= -R2/R1

180
The negative sign indicates that output signal is out of phase with

respect to input signal.

Note. Above equation Shows that G depends upon the two external
resistances R1 and R2, it is independent of what is happening inside the
amplifier.

Q11- The input of gate are 1 and 0 identify the gate if its output is (a) 0. (b) 1.

Ans (a) The gate may be AND, NOR or XNOR.

Reasons: if A= 1 and B=0

For AND gate

X=A.B

X=1.0

X=0

For NOR gate ____

X= A+B

X= 1+0

X= 0
For XNOR gate

X= A.B + A.B

X= 1.0 + 1.0

X= 1

X=0

(b) The gate may be OR, NAND or XOR.

Reasons : If A= 1 and B=0 then

For OR gate

X= A + B

X=1+0

X=1

For NAND gate

X= A.B

X = 1.0

X=0

X=1

For XOR gate

X= A.B + A.B

X= 1.0 + 1.0

X=1.1 + 0.0

X=1