DISCRETE SEMICONDUCTORS

DATA SHEET

BF245A; BF245B; BF245C

N-channel silicon field-effect
transistors
Product specification 1996 Jul 30
Supersedes data of April 1995
NXP Semiconductors Product specification

BF245A; BF245B;
N-channel silicon field-effect transistors
BF245C

FEATURES PINNING
Interchangeability of drain and source connections PIN SYMBOL DESCRIPTION
Frequencies up to 700 MHz. 1 d drain
2 s source
APPLICATIONS 3 g gate
LF, HF and DC amplifiers.

DESCRIPTION
1
handbook, halfpage 2
General purpose N-channel symmetrical junction 3 d
field-effect transistors in a plastic TO-92 variant package. g
s

MAM257
CAUTION
The device is supplied in an antistatic package. The
Fig.1 Simplified outline (TO-92 variant)
gate-source input must be protected against static
and symbol.
discharge during transport or handling.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VDS drain-source voltage 30 V
VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8 V
VGSO gate-source voltage open drain 30 V
IDSS drain current VDS = 15 V; VGS = 0
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
Ptot total power dissipation Tamb = 75 C 300 mW
yfs forward transfer admittance VDS = 15 V; VGS = 0; 3 6.5 mS
f = 1 kHz; Tamb = 25 C
Crs reverse transfer capacitance VDS = 20 V; VGS = 1 V; 1.1 pF
f = 1 MHz; Tamb = 25 C

1996 Jul 30 2
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage 30 V
VGDO gate-drain voltage open source 30 V
VGSO gate-source voltage open drain 30 V
ID drain current 25 mA
IG gate current 10 mA
Ptot total power dissipation up to Tamb = 75 C; 300 mW
up to Tamb = 90 C; note 1 300 mW
Tstg storage temperature 65 +150 C
Tj operating junction temperature 150 C

Note
1. Device mounted on a printed-circuit board, minimum lead length 3 mm, mounting pad for drain lead minimum
10 mm 10 mm.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient in free air 250 K/W
thermal resistance from junction to ambient 200 K/W

STATIC CHARACTERISTICS
Tj = 25 C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V(BR)GSS gate-source breakdown voltage IG = 1 A; VDS = 0 30 V
VGSoff gate-source cut-off voltage ID = 10 nA; VDS = 15 V 0.25 8.0 V
VGS gate-source voltage ID = 200 A; VDS = 15 V
BF245A 0.4 2.2 V
BF245B 1.6 3.8 V
BF245C 3.2 7.5 V
IDSS drain current VDS = 15 V; VGS = 0; note 1
BF245A 2 6.5 mA
BF245B 6 15 mA
BF245C 12 25 mA
IGSS gate cut-off current VGS = 20 V; VDS = 0 5 nA
VGS = 20 V; VDS = 0; Tj = 125 C 0.5 A

Note
1. Measured under pulse conditions: tp = 300 s; 0.02.

1996 Jul 30 3
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Cis input capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 4 pF
Crs reverse transfer capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 1.1 pF
Cos output capacitance VDS = 20 V; VGS = 1 V; f = 1 MHz 1.6 pF
gis input conductance VDS = 15 V; VGS = 0; f = 200 MHz 250 S
gos output conductance VDS = 15 V; VGS = 0; f = 200 MHz 40 S
yfs forward transfer admittance VDS = 15 V; VGS = 0; f = 1 kHz 3 6.5 mS
VDS = 15 V; VGS = 0; f = 200 MHz 6 mS
yrs reverse transfer admittance VDS = 15 V; VGS = 0; f = 200 MHz 1.4 mS
yos output admittance VDS = 15 V; VGS = 0; f = 1 kHz 25 S
fgfs cut-off frequency VDS = 15 V; VGS = 0; gfs = 0.7 of its 700 MHz
value at 1 kHz
F noise figure VDS = 15 V; VGS = 0; f = 100 MHz; 1.5 dB
RG = 1 k (common source);
input tuned to minimum noise

MGE785 MGE789
10 6
handbook, halfpage
handbook, halfpage ID
IGSS
(mA)
(nA) 5
1
4

typ
101 3

2
102
1

103 0
0 50 100 150 4 2 VGS (V) 0
Tj (C)

VDS = 0; VGS = 20 V. VDS = 15 V; Tj = 25 C.

Fig.2 Gate leakage current as a function of Fig.3 Transfer characteristics for BF245A;
junction temperature; typical values. typical values.

1996 Jul 30 4
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MBH555 MGE787
6 15
handbook, halfpage handbook, halfpage
ID
(mA) ID
5
(mA)
VGS = 0 V
4 10

0.5 V
2 5

1 1 V

1.5 V
0 0
0 10 VDS (V) 20 4 2 VGS (V) 0

VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C.

Fig.4 Output characteristics for BF245A; Fig.5 Transfer characteristics for BF245B;
typical values. typical values.

MBH553 MGE788
15 30
handbook, halfpage handbook, halfpage

ID ID
(mA) (mA)

VGS = 0 V
10 20

0.5 V

1 V
5 10
1.5 V

2 V

2.5 V
0 0
0 10 VDS (V) 20 10 5 VGS (V) 0

VDS = 15 V; Tj = 25 C. VDS = 15 V; Tj = 25 C.

Fig.6 Output characteristics for BF245B; Fig.7 Transfer characteristics for BF245C;
typical values. typical values.

1996 Jul 30 5
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MBH554 MGE775
30 4
handbook, halfpage handbook, halfpage
ID
ID
(mA)
(mA)
3
VGS = 0 V
20
VGS = 0 V

2 0.5 V
1 V

10
2 V
1 1 V
3 V
1.5 V
4 V

0 0
0 10 VDS (V) 20 0 50 100 150
Tj (C)

VDS = 15 V; Tj = 25 C. VDS = 15 V.

Fig.8 Output characteristics for BF245C; Fig.9 Drain current as a function of junction
typical values. temperature; typical values for BF245A.

MGE776 MGE779
15 20
handbook, halfpage handbook, halfpage
ID
ID (mA)
(mA) 16

10 VGS = 0 V
12
VGS = 0 V

8
5 2 V
1 V
4
2 V 4 V

0 0
0 50 100 150 0 50 100 Tj (C) 150
Tj (C)

VDS = 15 V. VDS = 15 V.

Fig.10 Drain current as a function of junction Fig.11 Drain current as a function of junction
temperature; typical values for BF245B. temperature; typical values for BF245C.

1996 Jul 30 6
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MGE778 MGE780
103
handbook, halfpage
102 104
handbook, halfpage
10

gis bis brs Crs

(A/V) gis (mA/V) (A/V) (pF)
Crs
102 10 103 1
bis

brs
10 1 102 101

1 101 10 102
10 102 103 10 102 103
f (MHz) f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 C.

VDS = 15 V; VGS = 0; Tamb = 25 C.
Fig.13 Common source reverse admittance as a
Fig.12 Input admittance; typical values. function of frequency; typical values.

MGE782 MGE783
10
gfs, halfpage
handbook,
103
handbook, halfpage
10

bfs
gos bos
(mA/V)
8 (A/V) (mA/V)
bos

102 1
6
gfs gos

4
10 101

2
bfs

0 1 102
10 102 f (MHz) 103 10 102 103
f (MHz)

VDS = 15 V; VGS = 0; Tamb = 25 C. VDS = 15 V; VGS = 0; Tamb = 25 C.

Fig.14 Common-source forward transfer admittance Fig.15 Common-source output admittance as a

as a function of frequency; typical values. function of frequency; typical values.

1996 Jul 30 7
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MGE777 MGE781
6 1.5
handbook, halfpage handbook, halfpage

Cis
(pF) Crs
(pF)
4
typ
typ
1

0 0.5
0 2 4 6 8 10 0 2 4 6 8 10
VGS (V) VGS (V)

VDS = 20 V; f = 1 MHz; Tamb = 25 C. VDS = 20 V; f = 1 MHz; Tamb = 25 C.

Fig.16 Input capacitance as a function of Fig.17 Reverse transfer capacitance as a function

gate-source voltage; typical values. of gate-source voltage; typical values.

MGE791 MGE784
8 10
handbook, halfpage handbook,
V halfpage
GSoff
|yfs|
at ID = 10 nA
(mA/V)
BF245C (V) 8
BF245B
6
BF245A
6

2 BF245C
2
BF245B

BF245A
0 0
0 5 10 15 20 0 10 20 30
ID (mA)
IDSS at VGS = 0 (mA)

VDS = 15 V; f = 1 kHz; Tamb = 25 C. VDS = 15 V; Tj = 25 C.

Fig.18 Forward transfer admittance as a function of Fig.19 Gate-source cut-off voltage as a function of
drain current; typical values. drain current; typical values.

1996 Jul 30 8
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

MGE790 MGE786
103 3
handbook, halfpage
handbook, halfpage
RDSon
F
(k)
(dB)
102
2
typ

10

1
BF245A
1
BF245B
BF245C

101 0
0 1 2 3 4 1 10 102 103
f (MHz)
VGS (V)

VDS = 0; f = 1 kHz; Tamb = 25 C. VDS = 15 V; VGS = 0; RG = 1 k; Tamb = 25 C.

Input tuned to minimum noise.
Fig.20 Drain-source on-state resistance as a
function of gate-source voltage; Fig.21 Noise figure as a function of frequency;
typical values. typical values.

1996 Jul 30 9
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

PACKAGE OUTLINE
Plastic single-ended leaded (through hole) package; 3 leads (on-circle) SOT54 variant

e1

L2

d A L

1
2 e1
D e

b1
L1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

L1(1) L2
UNIT A b b1 c D d E e e1 L
max max
5.2 0.48 0.66 0.45 4.8 1.7 4.2 14.5
mm 2.54 1.27 2.5 2.5
5.0 0.40 0.55 0.38 4.4 1.4 3.6 12.7

Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE REFERENCES EUROPEAN

ISSUE DATE
VERSION IEC JEDEC JEITA PROJECTION

04-06-28
SOT54 variant
05-01-10

1996 Jul 30 10
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

DATA SHEET STATUS

DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.

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1996 Jul 30 11
NXP Semiconductors Product specification

N-channel silicon field-effect transistors BF245A; BF245B; BF245C

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party customer(s). Customer is responsible for doing all
Quick reference data The Quick reference data is an
necessary testing for the customers applications and
extract of the product data given in the Limiting values and
products using NXP Semiconductors products in order to
Characteristics sections of this document, and as such is
avoid a default of the applications and the products or of
not complete, exhaustive or legally binding.
the application or use by customers third party
customer(s). NXP does not accept any liability in this Non-automotive qualified products Unless this data
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Limiting values Stress above one or more limiting
product is not suitable for automotive use. It is neither
values (as defined in the Absolute Maximum Ratings
qualified nor tested in accordance with automotive testing
System of IEC 60134) will cause permanent damage to
or application requirements. NXP Semiconductors accepts
the device. Limiting values are stress ratings only and
no liability for inclusion and/or use of non-automotive
(proper) operation of the device at these or any other
qualified products in automotive equipment or
conditions above those given in the Recommended
applications.
operating conditions section (if present) or the
Characteristics sections of this document is not warranted. In the event that customer uses the product for design-in
Constant or repeated exposure to limiting values will and use in automotive applications to automotive
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Terms and conditions of commercial sale NXP
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1996 Jul 30 12
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Printed in The Netherlands R77/02/pp13 Date of release:1996 Jul 30