G.

NARAYANAMMA INSTITUTE OF TECHNOLOGY & SCIENCE

(FOR WOMEN)
DEPARTMENT OF ECE
COURSE PLAN
Academic year: 2015-16 Semester: I sem Instruction period from: 23-6-2015 to Nov-2015
Name of the
Subject: Class and No. of Total no. of
Name of the subject faculty with
code section students periods / sem
designation
B.Tech II
Electronic Devices & S.Yagnasree Assist
Nil year I sem 70 60
Circuits Prof
IT - A

Week *Date of HODs Sign Directors

Unit no. Lect. no. Name of the Topic completion sign
no.

1 Introduction-Objective of the subject,

Energy Band Theory, Classification of
2
1 Materials.
3 Conduction in intrinsic Semiconductors
4 Conduction in Extrinsic Semiconductors,
I 5 Continuity equation,
6 Hall Effect, PN junction formation
Open circuited Step graded PN Junction,
7
Forward and Reverse biasing of PN Junction
2 8 V-I characteristics of PN Diode,
9 Diode equation
Temperature dependence, Resistance levels,
10
Transition Capacitance
11 Diffusion Capacitance
12 Load line Analysis, Breakdown Mechanisms
3 13 Zener Diode Characteristics
14 Rectifiers HWR, FWR
HWR- derivations- Ripple factor, TUF,
15
efficiency
FWR- derivations- Ripple factor, TUF,
16
efficiency
17 Bridge rectifier, Filters C filter
4 18 L section, Pie- filter
19 Voltage regulation using Zener Diode
20 UNIT- II BJT, Biasing and Stabilization
II Transistor-npn, pnp, Construction, operation,
21
Symbol, Current Components
22 Configurations CB,CE,CC
Limits of operations, Specifications,
5 23
Operating point, AC & DC load lines
24 Excercises
Need for Biasing, Fixed bias, Collector
25
feedback bias
6 Emitter feedback bias, Collector- Emitter
26
feedback bias, Voltage divider bias
Stability, Stabilization factors, stabilization
27
against variations in VBE and .
II Bias compensation using diodes and
28 Transistors, Thermal runaway, Thermal
Stability
29 Problems
 UNIT- III Small signal Model Low frequency BJT
30
III models: different parameters
31 BJT Hybrid Model
Determination of h- parameters from Transistor
32
Characteristics,
Analysis of transistor amplifier using h-
7 33
parameters- CB
Analysis of transistor amplifier using h-parameters-
34
IV CE
35 Comparison of amplifiers
36
UNIT- III Small signal Model Low frequency BJT
37
models: different parameters
38
UNIT IV- FET, FET Amplifiers
39
Comparison between BJT and FET
10
JFET construction , Principle of operation,
40
Symbol
41 Pinch off voltage, V-I characteristics
42 Differences between JFET and MOSFET
MOSFET, Construction, principle of operation
43
and symbol
11 MOSFET characteristics in Enhancement mode of
44
operation
MOSFET characteristics in Depletion mode
45
of operation, Differences
46 FET Biasing Fixed bias, Self bias
47 Voltage divider bias and feed back bias,
12
48 JFET small signal model, CS amplifier
49 CD amplifier, Generalized FET amplifier
50 FET as voltage variable resistor
51 Revision, problems
13
52 problems
53 UNIT V Special purpose electronic devices
Tunnel diode principle of operation,
V 54
characteristics
14
55 Varactor diode
56 Schottky Barrier diode
57 Semiconductor photo diode, Photo transistor
15 58 LED,PIN diode
59 UJT operation, application
60 SCR-operation, applications
16
End of the syllabus

Signature of the HOD Signature of the Faculty

Date: Date:

Note:
1. *This column has to be filled up after completing the lecture in the copy kept with the faculty
member.
2. One or two periods should be allocated for revision and discussions on previous question
papers and indicate the same at the end of each unit.
3. Prepare course plan with the help of individual time table, semester almanac and calendar
4. It should not be another syllabus copy. It should include sub topics also.
5. If no of periods are 4 per week, plan for 50 to 55 periods and if 5 per week, plan for 65 to 70
periods.