QED121, QED122, QED123 Plastic Infrared Light Emitting Diode

August 2008

QED121, QED122, QED123

Plastic Infrared Light Emitting Diode
FeaturesPACKAGE DIMENSIONS Description
= 880nm The QED121, QED122 and QED123 are 880nm
Chip material = AlGaAs AlGaAs LEDs encapsulated in a clear peach tinted,
Package type: T-1 3/4 (5mm lens diameter)
plastic T-1 3/4 package.
Matched photosensor: QSD122/QSD123/QSD124
Narrow emission angle, 16
High output power
Package material and color: clear, peach tinted, plastic

Package Dimensions
0.195 (4.95)

REFERENCE
SURFACE 0.305 (7.75)

0.040 (1.02)
NOM
0.800 (20.3)
MIN

CATHODE
Schematic
0.050
0.100 (2.54)
(1.25)
NOM
ANODE

CATHODE
0.240 (6.10)
0.215 (5.45)
0.020 (0.51)
SQ. (2X)

Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is 0.010 (0.25) on all non-nominal dimensions
unless otherwise specified.

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com

QED121, QED122, QED123 Rev. 1.0.1
 QED121, QED122, QED123 Plastic Infrared Light Emitting Diode
Absolute Maximum Ratings (TA = 25C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol Parameter Rating Units
TOPR Operating Temperature -40 to +100 C
TSTG Storage Temperature -40 to +100 C
TSOL-I Soldering Temperature (Iron)(2)(3)(4) 240 for 5 sec C
TSOL-F Soldering Temperature (Flow)(2)(3) 260 for 10 sec C
IF Continuous Forward Current 100 mA
VR Reverse Voltage 5 V
PD Power Dissipation(1) 200 mW

Notes:
1. Derate power dissipation linearly 2.67mW/C above 25C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6mm) minimum from housing.

Electrical / Optical Characteristics (TA = 25C)

Symbol Parameter Test Conditions Min. Typ. Max. Units
PE Peak Emission Wavelength IF = 20mA 890 nm
TC Temperature Coefficient 0.2 nm / C
21/2 Emission Angle IF = 100mA 16
VF Forward Voltage IF = 100mA, tp = 20ms 1.7 V
TCVF Temperature Coefficient -6 mV / C
IR Reverse Current VR = 5V 10 A
IE Radiant Intensity QED121 IF = 100mA, tp = 20ms 16 40 mW/sr
IE Radiant Intensity QED122 IF = 100mA, tp = 20ms 32 100 mW/sr
IE Radiant Intensity QED123 IF = 100mA, tp = 20ms 50 70 mW/sr
TCIE Temperature Coefficient -0.3 % / C
tr Rise Time IF = 100mA 900 ns
tf Fall Time 800 ns
Cj Junction Capacitance VR = 0V 11 pF

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com

QED121, QED122, QED123 Rev. 1.0.1 2
 QED121, QED122, QED123 Plastic Infrared Light Emitting Diode
Typical Performance Curves
Figure 1. Normalized Intensity vs. Wavelength Figure 2. Peak Wavelength vs. Ambient Temperature
1.0 910
IF = 20mA DC

PE PEAK EMISSION WAVELENGTH

0.9
908
0.8
NORMALIZED INTENSITY

906
0.7
904
0.6

0.5 902

0.4
900
0.3
898
0.2
896
0.1

0.0 894
700 750 800 850 900 950 1,000 1,050 0 10 20 30 40 50 60 70 80 90 100
(nm) TA AMBIENT TEMPERTURE (C)

Figure 3. Normalized Radiant Intensity vs. Forward Current Figure 4. Normalized Radient Intensity vs. Ambient Temperature
10 1.3
Normalized to:
Normalized to:

Ie NORMALIZED RADIANT INTENSITY

Ie NORMALIZED RADIANT INTENSITY

IF = 20mA Pulsed
IF = 100mA Pulsed 1.2 tPW = 20mS
tPW = 20mS Duty Cycle = 4%
Duty Cycle = 4% TA = 25C
TA = 25C 1.1

1.0
1
0.9

0.8

0.7

0.1 0.6
10 100 1000 -15 0 15 30 45 60 75 90 105

IF FORWARD CURRENT (mA) TA AMBIENT TEMPERTURE (C)

Figure 5. Forward Voltage vs. Forward Current Figure 6. Forward Voltage vs. Ambient Temperature
5.0 2.1
IF = 20mA Pulsed
IF Pulsed
tPW = 20mS
tPW = 20mS
2.0 Duty Cycle = 4%
Duty Cycle = 4%
VF FORWARD VOLTAGE (V)

VF FORWARD VOLTAGE (V)

4.0
TA = 25C

1.9
3.0

1.8

2.0
1.7

1.0
1.6

0.0 1.5
10 100 1000 -15 0 15 30 45 60 75 90 105
IF FORWARD CURRENT (mA) TA AMBIENT TEMPERTURE (C)

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com

QED121, QED122, QED123 Rev. 1.0.1 3
 QED121, QED122, QED123 Plastic Infrared Light Emitting Diode
Typical Performance Curves (Continued)
Figure 7. Radiation Diagram Figure 8. Coupling Characteristics of QED12X and QSD12X

IC (ON) NORMALIZED COLLECTOR CURRENT

1.0
100 90 80 Normalized to:
110 70 d = 0 inch
120 60 Pulse Width = 100s
0.8 Duty Cycle = 0.1%
130 50 VCC = 5V
RL = 100
140 40 TA = 25C
0.6
150 30 IF = 100mA

160 20 0.4

170 10
IF = 20mA
0.2
180 0
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0

0.0
0 1 2 3 4 5 6
LENS TIP SEPARATION (inches)

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com

QED121, QED122, QED123 Rev. 1.0.1 4
 QED121, QED122, QED123 Plastic Infrared Light Emitting Diode
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change in
Formative / In Design
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
Full Production
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The
Not In Production
datasheet is for reference information only.
Rev. I36

2001 Fairchild Semiconductor Corporation www.fairchildsemi.com

QED121, QED122, QED123 Rev. 1.0.1 5
Mouser Electronics

Authorized Distributor

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