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SWR
fO, where the transmission lines to mount the D3 and D4 diode junc- Z = 30
are /4 in length, the switch op- tions electrically close to the com-
1.6:1
Z = 35
erates as follows: When Diode D1 mon arm. 1.4:1
is forward biased and Diode D2 is
reverse biased, R.F. power will The bandwidth of the shunt di- 1.2:1
flow from Port 3 to Port 2, and ode switch can be improved by 1.0:1
0.5 0.7 0.9 1.1 1.3 1.5
R.F. Port 1 will be isolated. The the simple impedance matching FREQUENCY, BROADBAND SWITCH, f/fo
/4 line will transform the short technique shown in Figure 4. A
circuit at D1 into an open circuit third transmission line, a quar- Figure 5. SWR vs Frequency Ratio,
Broadband Switch.
at the common junction, elimi- ter wavelength long at fO, is
nating any reactive loading at placed between the common other two, small additional im-
that point. However, as the fre- junction and RF Port 3. In addi- provements in SWR can be made.
quency is changed from fO, the tion, the impedance of all three This variation of the broadband-
transmission lines will change in lines is set to some value, Z, be- ing technique is beyond the scope
electrical length, creating a mis- low 50 ohms. The specific value of this note, but it can be easily
match at the common junction. of impedance that is chosen will and quickly evaluated by means
For example, when the ratio f/fO determine the SWR and band- of one of the many microwave
or fO/f is 1.2 (40% bandwidth), width of the switch. Figure 5 circuit analysis programs avail-
the VSWR of the structure will gives the SWR vs. bandwidth for able on timeshared computers.
be 1.43:1. five values of Z. For example,
setting the impedance of the For technical assistance or the location of
To improve bandwidth without sac- three transmission lines to 35 your nearest Hewlett-Packard sales office,
rificing isolation, a designer will ohms results in a 1.43:1 SWR distributor or representative call:
often resort to the series/shunt cir- bandwidth of 100% (3:1), a sig- Americas/Canada: 1-800-235-0312 or
cuit of Figure 3. When positive bias nificant improvement over the (408) 654-8675
is applied to bias Port 1 and nega- bandwidth of the switch shown Far East/Australasia: (65) 290-6305
tive bias is applied to bias Port 2, in Figure 2. The data shown on Japan: (81 3) 3331-6111
Diodes D3 and D2 are forward bi- Figure 5 was computed assum- Europe: Call your local HP sales office
ased into a low resistance state, ing a resistance of 0.5 ohms for listed in your telephone directory. Ask for
while Diodes D1 and D4 are reverse D1 and 1000 ohms for D2. a Components representative.
biased into a high resistance state. Data Subject to Change
R. F. power flows from RF Port 3 to By selecting the impedance for Copyright 1996 Hewlett-Packard Co.
RF Port 1. Diode D4 acts as an open the transmission line of Port 3 to Obsoletes 5952-0710
circuit to isolate the short at D2 be slightly different from the Printed in U.S.A. 5964-3902E (1/96)