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by MJE13009/D
SEMICONDUCTOR TECHNICAL DATA
*Motorola Preferred Device
12 AMPERE
CASE 221A06
TO220AB
MAXIMUM RATINGS
16
THERMAL CHARACTERISTICS
Designers Data for Worst Case Conditions The Designers Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves representing boundaries on device characteristics are given to facilitate worst case design.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
3676
Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
MJE13009
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
*OFF CHARACTERISTICS
(IC = 10 mA, IB = 0)
Emitter Cutoff Current
IEBO 1 mAdc
(VEB = 9 Vdc, IC = 0)
SECOND BREAKDOWN
Second Breakdown Collector Current with base forward biased IS/b See Figure 1
Clamped Inductive SOA with Base Reverse Biased See Figure 2
*ON CHARACTERISTICS
8 40
(IC = 8 Adc, VCE = 5 Vdc) 6 30
(IC = 5 Adc, IB = 1 Adc) 1.2
(IC = 8 Adc, IB = 1.6 Adc) 1.6
(IC = 8 Adc, IB = 1.6 Adc, TC = 100_C) 1.5
DYNAMIC CHARACTERISTICS
Output Capacitance Cob 180 pF
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
SWITCHING CHARACTERISTICS
Rise Time
IB1 = IB2 = 1.6 A, tp = 25 s,
v
Storage Time Duty Cycle 1%) ts 1.3 3 s
Fall Time
tf 0.2 0.7 s
Voltage Storage Time (IC = 8 A, Vclamp = 300 Vdc, tsv 0.92 2.3 s
Figure 1. Forward Bias Safe Operating Area Figure 2. Reverse Bias Switching Safe
Operating Area
The Safe Operating Area figures shown in Figures 1 and 2 are specified ratings for these devices under the test conditions shown.
1
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1 P(pk)
ZJC(t) = r(t) RJC
0.07 0.05
RJC = 1.25C/W MAX
0.05 D CURVES APPLY FOR POWER
0.02
0.03 PULSE TRAIN SHOWN t1
READ TIME AT t1 t2
0.02 0.01 TJ(pk) TC = P(pk) ZJC(t)
SINGLE PULSE DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1.0 k
t, TIME (ms)
IC = 1 A 3A 5A 8A 12 A
20 25C 1.2
0.8
55C
10
0.4 TJ = 25C
7
VCE = 5 V
5 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 2 3 5
IC, COLLECTOR CURRENT (AMP) IB, BASE CURRENT (AMP)
1.4 0.7
0.6 IC/IB = 3
1.2 IC/IB = 3 TJ = 150C
0.5
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
TJ = 55C
1 0.4
0.4 0
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.2 0.3 0.5 0.7 1 2 3 5 7 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
10K 4K
VCE = 250 V
2K Cib
IC, COLLECTOR CURRENT ( A)
1K
C, CAPACITANCE (pF)
TJ = 150C 1K TJ = 25C
800
100 125C 600
100C 400
10 75C
200 Cob
50C
1 100
25C 80
60
0.1 REVERSE FORWARD
40
0.4 0.2 0 + 0.2 + 0.4 + 0.6 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500
VBE, BASEEMITTER VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS)
RESISTIVE
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
SWITCHING
+5 V
VCC
1N4933 33
MJE210 +125 V
L
0.001 F MR826*
33 1N4933 RC
TEST CIRCUITS
5V TUT
PW 2N2222 IC Vclamp
RB RB SCOPE
1k
DUTY CYCLE 10% 68 *SELECTED FOR 1 kV
tr, tf 10 ns 1k IB 5.1 k
+5 V VCE D1
51
1N4933 1k D.U.T.
2N2905 4.0 V
0.02 F 270 47 100
MJE200
NOTE
PW and VCC Adjusted for Desired IC 1/2 W
RB Adjusted for Desired IB1 VBE(off)
VCC = 125 V
CIRCUIT
VALUES
Coil Data:
GAP for 200 H/20 A VCC = 20 V RC = 15
Ferroxcube Core #6656
Lcoil = 200 H Vclamp = 300 Vdc D1 = 1N5820 or Equiv.
Full Bobbin (~16 Turns) #16
RB =
OUTPUT WAVEFORMS
tf CLAMPED
+10 V 25 s
TEST WAVEFORMS
IC tf UNCLAMPED t2 t1 ADJUSTED TO
ICM OBTAIN IC 0
t Test Equipment
L (I )
t1 tf t1 coil CM ScopeTektronics
8 V
VCC 475 or Equivalent
VCE
VCEM Vclamp Lcoil (ICM) tr, tf < 10 ns
t2 Duty Cycle = 1.0%
Vclamp
RB and RC adjusted
TIME t2 for desired IB and IC
INTRODUCTION 100_C. Increasing the reverse bias will give some improve-
ment in device blocking capability.
The primary considerations when selecting a power tran-
The sustaining or active region voltage requirements in
sistor for SWITCHMODE applications are voltage and cur-
switching applications occur during turnon and turnoff. If
rent ratings, switching speed, and energy handling capability.
the load contains a significant capacitive component, high
In this section, these specifications will be discussed and re-
current and voltage can exist simultaneously during turnon
lated to the circuit examples illustrated in Table 2.(1)
and the pulsed forward bias SOA curves (Figure 1) are the
proper design limits.
VOLTAGE REQUIREMENTS For inductive loads, high voltage and current must be sus-
tained simultaneously during turnoff, in most cases, with the
Both blocking voltage and sustaining voltage are important
base to emitter junction reverse biased. Under these condi-
in SWITCHMODE applications.
tions the collector voltage must be held to a safe level at or
Circuits B and C in Table 2 illustrate applications that re-
below a specific value of collector current. This can be ac-
quire high blocking voltage capability. In both circuits the
complished by several means such as active clamping, RC
switching transistor is subjected to voltages substantially
snubbing, load line shaping, etc. The safe level for these de-
higher than V CC after the device is completely off (see load
vices is specified as a Reverse Bias Safe Operating Area
line diagrams at IC = Ileakage 0 in Table 2). The blocking ca-
(Figure 2) which represents voltagecurrent conditions that
pability at this point depends on the base to emitter condi-
can be sustained during reverse biased turnoff. This rating
tions and the device junction temperature. Since the highest
is verified under clamped conditions so that the device is
device capability occurs when the base to emitter junction is
never subjected to an avalanche mode.
reverse biased (V CEV), this is the recommended and speci-
fied use condition. Maximum I CEV at rated V CEV is specified (1) For detailed information on specific switching applications, see
at a relatively low reverse bias (1.5 Volts) both at 25C and Motorola Application Notes AN719, AN767.
700
300 VCC = 125 V
t, TIME (ns)
t, TIME (ns)
500 IC/IB = 5
200 TJ = 25C
tr
300
100 200
70 td @ VBE(off) = 5 V tf
50 100
0.2 0.3 0.5 0.7 1 2 3 5 7 10 20 0.2 0.3 0.5 0.7 1 2 5 7 10 20
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. TurnOn Time Figure 12. TurnOff Time
IC IC
Vclamp
90% VCEM 90% IC
VCE
tsv trv tfi tti
VOLTAGE 50 V/DIV
CURRENT 2 A/DIV
tc
Vclamp
10%
VCEM 10%
IB ICM 2%
90% IB1 IC
IC
VCE
TIME TIME 20 ns/DIV
Figure 13. Inductive Switching Measurements Figure 14. Typical Inductive Switching Waveforms
(at 300 V and 12 A with IB1 = 2.4 A and VBE(off) = 5 V)
Collector Current
PD = 4000 W 2
TC = 100C
350 V
A 12 A TURNOFF (REVERSE BIAS) SOA t
TURNON 1.5 V VBE(off) 9.0 V TIME
VCE
DUTY CYCLE 10%
VCC VO TURNOFF VCC
COLLECTOR VOLTAGE t
TIME
RINGING CHOKE
INVERTER TURNON (FORWARD BIAS) SOA
24 A TURNON ton 10 ms IC
TURNON DUTY CYCLE 10%
Collector Current
VCC + N(Vo) t
COLLECTOR VOLTAGE
PUSHPULL
INVERTER/CONVERTER TURNON (FORWARD BIAS) SOA
24 A TURNON ton 10 ms IC
TURNON DUTY CYCLE 10%
toff
Collector Current
SOLENOID DRIVER
TURNON (FORWARD BIAS) SOA
24 A TURNON ton 10 ms
IC
TURNON DUTY CYCLE 10%
Collector Current
TC = 100C PD = 4000 W 2
VCC ton toff
350 V
t
SOLENOID 12 A TURNOFF (REVERSE BIAS) SOA
D TURNOFF 1.5 V VBE(off) 9.0 V VCE
TURNOFF DUTY CYCLE 10%
TURNOFF
VCC
TURNON
VCC 400 V 1 700 V 1
COLLECTOR VOLTAGE t
Table 3. Typical Inductive Switching Performance
IC TC tsv trv tfi tti tc
AMP _C ns ns ns ns ns
3 25 770 100 150 200 240
100 1000 230 160 200 320
5 25 630 72 26 10 100
100 820 100 55 30 180
8 25 720 55 27 2 77
100 920 70 50 8 120
12 25 640 20 17 2 41
100 800 32 24 4 54
NOTE: All Data recorded In the Inductive Switching Circuit In Table 1.
In resistive switching circuits, rise, fall, and storage times For the designer, there is minimal switching loss during
have been defined and apply to both current and voltage storage time and the predominant switching power losses
waveforms since they are in phase. However, for inductive occur during the crossover interval and can be obtained us-
loads which are common to SWITCHMODE power supplies ing the standard equation from AN222:
and hammer drivers, current and voltage waveforms are not
PSWT = 1/2 VCCIC(tc) f
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
Typical inductive switching waveforms are shown in Fig-
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% VCEM
]
ure 14. In general, t rv + t fi t c. However, at lower test cur-
rents this relationship may not be valid.
trv = Voltage Rise Time, 10 90% VCEM As is common with most switching transistors, resistive
tfi = Current Fall Time, 90 10% ICM switching is specified at 25_C and has become a benchmark
tti = Current Tail, 10 2% ICM for designers. However, for designers of high frequency con-
tc = Crossover Time, 10% VCEM to 10% ICM verter circuits, the user oriented specifications which make
An enlarged portion of the turnoff waveforms is shown in this a SWITCHMODE transistor are the inductive switching
Figure 13 to aid in the visual identity of these terms. speeds (tc and tsv) which are guaranteed at 100_C.
NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
T PLANE
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
T S BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
4
INCHES MILLIMETERS
A DIM MIN MAX MIN MAX
Q A 0.570 0.620 14.48 15.75
1 2 3 B 0.380 0.405 9.66 10.28
U C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
L R N 0.190 0.210 4.83 5.33
V Q 0.100 0.120 2.54 3.04
J R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D U 0.000 0.050 0.00 1.27
N V 0.045 1.15
Z 0.080 2.04
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
CASE 221A06
TO220AB
ISSUE Y
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*MJE13009/D*
Device Data
Motorola Bipolar Power Transistor 3685
MJE13009/D