Sie sind auf Seite 1von 3

Power Transistors

2SA2057
Silicon PNP epitaxial planar type
Unit: mm
Power supply for audio & visual equipments 9.90.3
4.60.2
2.90.2
such as TVs and VCRs

3.00.5
Industrial equipments such as DC-DC converters 3.20.1

15.00.5
Features
High speed switching (t stg: storage time/tf: fall time is short)
Low collector-emitter saturation voltage VCE(sat)

4.20.2
1.40.2
Superior forward current transfer ratio h FE linearity 1.60.2
2.60.1

13.70.2
TO-220D built-in: Excellent package with withstand voltage 5 kV

Solder Dip
0.80.1 0.550.15
guaranteed

Absolute Maximum Ratings TC = 25C 2.540.30


5.080.50
Parameter Symbol Rating Unit 1 2 3
1 : Base
2 : Collector
Collector-base voltage (Emitter open) VCBO 60 V 3 : Emitter
Collector-emitter voltage (Base open) VCEO 60 V TO-220D-A1 Package

Emitter-base voltage (Collector open) VEBO 6 V Internal Connection


Collector current IC 3 A
C
Peak collector current * ICP 6 A
Collector power dissipation PC 20 W B
Ta = 25C 2.0
Junction temperature Tj 150 C E

Storage temperature Tstg 55 to +150 C


Note) *: Non-repetitive peak collector current

Electrical Characteristics TC = 25C 3C


Parameter Symbol Conditions Min Typ Max Unit
Collector-emitter voltage (Base open) VCEO IC = 10 mA, IB = 0 60 V
Collector-base cutoff current (Emitter open) ICBO VCB = 60 V, IE = 0 100 A
Collector-emitter cutoff current (Base open) ICEO VCE = 60 V, IB = 0 100 A
Emitter-base cutoff current (Collector open) IEBO VEB = 6 V, IC = 0 1 mA
Forward current transfer ratio hFE1 * VCE = 4 V, IC = 1 A 120 320
hFE2 VCE = 4 V, IC = 3 A 40
Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.375 A 0.5 V
Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 10 MHz 90 MHz
Turn-on time ton IC = 1 A, Resistance loaded 0.15 0.30 s
Storage time tstg IB1 = 0.1 A, IB2 = 0.1 A 0.4 0.7 s
Fall time tf VCC = 50 V 0.10 0.15 s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank Q P
hFE1 120 to 250 160 to 320

Publication date: January 2003 SJD00284BED 1 http://www.Datasheet4U.com


2SA2057

PC Ta IC VBE VCE(sat) IC
35 10
(1) TC = Ta IC / I B = 8
VCE = 4 V

Collector-emitter saturation voltage VCE(sat) (V)


(2) Without heat sink
30 6
Collector power dissipation PC (W)

Ta = 100C 1

Collector current IC (A)


25
Ta = 100C
(1) 25C
20 4
0.1
15
25C
25C
10 2 25C
0.01

5
(2)

0 0 0.001
0 20 40 60 80 100 120 140 160 0 0.4 0.8 1.2 0.01 0.1 1 10
Ambient temperature Ta (C) Base-emitter voltage VBE (V) Collector current IC (A)

hFE IC Safe operation area


10 000 100
VCE = 4 V Non repetitive pulse
TC = 25C
Forward current transfer ratio hFE

1 000 Ta = 100C 10 I
Collector current IC (A)

CP
t = 1 ms
t = 10 ms
IC
t=1s
25C 25C
100 1

10 0.1

1 0.01
0.01 0.1 1 10 1 10 100 1 000
Collector current IC (A) Collector-emitter voltage VCE (V)

Rth t
1 000
Ta = 25C
Thermal resistance Rth (C/W)

100

(1)

(2)
10

(1) Without heat sink


(2) With 100 100 2 mm Al
0.1
0.001 0.01 0.1 1 10 100 1 000
Time t (s)

2 SJD00284BED
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteris-
tics and applied circuits examples of the products. It neither warrants non-infringement of intellec-
tual property right or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instru-
ments and household appliances).
Consult our sales staff in advance for information on the following applications:
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maxi-
mum rating, the range of operating power supply voltage, and heat radiation characteristics. Other-
wise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.

2002 JUL

Das könnte Ihnen auch gefallen