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AbstractA prototype model is designed with interleaved dc- Thus comparing the traditional Silicon (Si) based devices SiC
dc boost converter for photo voltaic based dc motor speed switches has more benefits in hard switched DC/DC-
control. By comparing the carrier signal and the fuzzy logic converters. In the investigated dc/dc converter system, SiC-
signals, the motor speed can be modified. Controlling the
electrical and mechanical devices is mostly done by fuzzy based technology gives better performances than Si- based
controller due to the multi input and multi output operation and power semiconductor devices. At present scenario, Sic is the
its performances. Due to the increased switching speed SiC-based only wide band gap material with high performance 1200V
applications is more predominant for SiC MOSFETs as and 1700V devices to address the power electronics market
compared to Si IGBTs. The proposed system features the dc needs[4-6]. The Sic devices with low switching loss improves
motor speed control by the varying the duty cycle of the gate
signals given to the power devices. Interleaved boost converter is
the overall converter efficiency reduces the temperature stress
preferred for high voltage gain from the solar panel. of the designed power devices. To investigate the performance
Effectiveness of the proposed scheme was checked for various of high temperature and high frequency of Sic devices, some
duty cycles with Matlab/Simulink. research works have been carried out in power electronics
technology. The prototype developed is a PV system using a
Index TermsSic Mosfet, PV array, Interleaved dc-dc boost fuzzy controller with a Coupled-Inductor Interleaved Boost
converter, Fuzzy logic controller. Converter (CIBC) fed with a fuzzy feed forward method. A
parallel connection technique of boost converter for unity
I. INTRODUCTION power factor was proposed in. This system is based on two
Wide band gap materials have the property to operate at cell converter which is operated in continuous inductor current
high switching frequencies with high accuracy reducing the mode. With an extra small inductance, two Mosfet pulse width
overall cost and volume of the system. SiC technology has modulation are connected in parallel, which provides an
emerged in the power electronics market as it has superior increased output power. Any number of PWM cells can be
properties like high level of switching speed, withstanding paralleled by this method. DC to DC switching converters
high temperature capability, low switching losses, higher with parallel connection of N-identical boost converters with
operating frequency. The low switching losses of the silicon Current-Mode Control (CMC) is presented. This method helps
carbide (Sic) MOSFET enable the reduction of end-system in equal current sharing between two parallel connection boost
cost, even at low frequency. A voltage source inverter (VSI) converters.
designed by Cree with commercially available 1200V Sic and The rest of the work is organized as follows: Part II gives
Si modules evaluated operating at conventional frequencies an overview on system description and modeling. Proposed
[1-3]. A 100A Sic module has the capacity to replace at least a method and operating modes is described in Part III and IV.
150A Si module operating at low 5 kHz operation which Part V and VI gives the comparison of four reduction
provides significant performance and reliability advantages. techniques and the results are mentioned with experimental
For overload and thermal margin requirements, the 100A Sic setup, Section VII gives the conclusion of this paper.
module replaces up to a 300A Si at modest 16 kHz operation.
II. SYSTEM DESCRIPTION AND MODELING
P. Karthika, Assistant Professor, Sri Sairam Institute of Technology,
karthika.eee@sairamit.edu.in, karthikaniti@gmail.com The modeled system is a simple structure consists of PV
M.Ameen Basha, Sri Sairam Institute of Technology, array, Interleaved Boost Converter, Silicon Carbide MOSFET,
ameenbasha77@gmail.com
P.Ayyappan, Sri Sairam Institute of Technology, p.ayyapan94@gmail.com Fuzzy controller, Battery and a dc motor. The designed
C.K.Sidharthan, Sri Sairam Institute of Technology, csidharthank@gmail.com converter boost up the input voltage given to the dc motor. By
V.R.Rajkumar, Sri Sairam Institute of Technology, adjusting the duty ratio of the fuzzy technique [7-10], the
rajkumar.cudd7799@gmail.com
output voltage of the converter is varied; thereby speed of the
dc motor is controlled.
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IV. OPERATING MODES
During the mode 1, the current flows through the L1 with In the circuit diagram, motor speed is controlled by
positive and negative polarity and reaches the negative varying the duty cycle in which the duty cycle compares the
terminal. So the current will not flow to the load because it input signal of error (e) Fig. 6 and the change in the error (ce)
forms a reverse bias. Fig. 7 gives the output of duty cycle fig.8 to the Sic MOSFET
as a gate pulse.
In the mode 2, the gate pulse is switched off. So the
inductor L1 discharges with polarity of negative and positive,
forms a forward bias and supplies the voltage to the load.
In the mode 3, the gate pulse is given to the Mosfet switch
S2.The current flows through L2 with a polarity of positive
and negative and reaches the negative terminal. so the current
will not flow through the load because it forms an negative
bias.
Fig. 5. Rules of fuzzy logic controller
In the mode 4, the gate pulse is switched off. So the
inductor L2 discharges with a polarity of negative and Fig. 5 represents the view of the rules for the proposed
positive, forms a forward bias and supplies the voltage to the fuzzy logic control. The rules represent the two error inputs
load. and error change combinations for a given output.
TABLE I
DESIRED SPECIFICATIONS OF INTERLEAVED BOOST CONVERTER
Parameter Values
PV voltage 100.25V
-5
L1, L2 2.773X10 H
-4
C1, C2 3.1746X10 F
D1, D2 0.8 V(Forward voltage)
KNOWLEDGE
BASE
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The design parameters are,
Vout = ESR X 2Iout (max) +Ic Fig. 10. Photo voltaic panel output
(1-D) 2
Where In the normal existing method, Mosfet and diode
Iout = Output Current cannot withstand very high temperature so we have to reduce
Ic = Capcitive Current the heat by using the heat sink[11-13]. But in our proposed
method we are using the Silicon Carbide MOSFET in which it
can withstand very high temperature 800/spl deg/C for 30 min
L = Vin x (Vout-Vin) and voltage up to 1200V which is shown in the above
simulation diagram Fig. 10. DC bus voltage:
ILxS x Vout
Where
Vin = Input Voltage
Vout = Output Voltage
IL = Line Current
Pm = Tx
Where
Pm=Motor Power
T = Total Power Fig. 11. Interleaved boost converter output.
TABLE II
PREDICTED PARAMETERS
Parameter Values
Dc motor voltage(volt) 325 V
Torque(N-m) 450 N-m
Speed(rad/sec) 1717.2 RPM
Armature current(Amps) 250 A
EXPERIMENTAL SETUP
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Motor output REFERENCES
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