Assignment 1

Introduction to Nanoscience and Technology

Last date of submission : 4/9/10 (Saturday)

1. A sample of GaAs was doped with excess As to a level calculated to
produce a resistivity 0.05 m. Owing to the present of an unknown
acceptor impurity, the actual resistivity was 0.06 m and the sample
remains as n-type. What are the concentrations of donors and
acceptors present? Take e = 0.85 m2V-1s -1 and assume that all
impurity atoms are ionized.
2. How do you expect the conductivity to vary in an intrinsic
semiconductor with increasing temperature?
3. Show that according to the free electron model the resistance R of a
wire of length L is given by R = mL/nAe 2T, where A is the cross section
of the wire, t is the mean time between collisions.
4. A CdS photo detector receives radiation of 400 nm wavelength over an
area of 2 x 10-6 m2 and with an intensity of 40 Wm -2. The energy gap is
2.4 eV. Calculate the number of e-h pairs generated per second if each
quantum generates a pair. Also calculate the increase in conductivity if
the electron lifetime is 10-3 s and n = 10-2 m2V-1s -1.
5. Calculate the number of states per unit energy in a 100 x 100 x 10 nm
piece of silicon (m* = 1.08 m0), 100 meV above the conduction band
edge. Write the result in units of eV-1.