2SK2965

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSV)

2SK2965
Switching Regulator, DCDC Converter and Motor Drive
Applications Unit: mm

z Low drainsource ON resistance : RDS (ON) = 0.15 (typ.)

z High forward transfer admittance : |Yfs| = 10 S (typ.)
z Low leakage current : IDSS = 100 A (max) (VDS = 200 V)
z Enhancement mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristics Symbol Rating Unit

Drainsource voltage VDSS 200 V

Draingate voltage (RGS = 20 k) VDGR 200 V
Gatesource voltage VGSS 20 V
DC (Note 1) ID 11 A
Drain current
Pulse (Note 1) IDP 33 A
Drain power dissipation (Tc = 25C) PD 35 W
Single pulse avalanche energy JEDEC
EAS 115 mJ
(Note 2)
JEITA SC-67
Avalanche current IAR 11 A
TOSHIBA 2-10R1B
Repetitive avalanche energy (Note 3) EAR 3.5 mJ
Channel temperature Tch 150 C
Weight: 1.9 g (typ.)

Storage temperature range Tstg 55~150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance, channel to case Rth (chc) 3.57 C / W

Thermal resistance, channel to
Rth (cha) 62.5 C / W
ambient

Note 1: Ensure that the channel temperature does not exceed 150C.

Note 2: VDD = 50 V, Tch = 25C (initial), L = 1.53 mH, RG = 25 , IAR = 11 A

Note 3: Repetitive rating: pulse width limited by maximum channel temperature.

This transistor is an electrostatic-sensitive device.

Please handle with caution.

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Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 16 V, VDS = 0 V 10 A

Drain cutoff current IDSS VDS = 200 V, VGS = 0 V 100 A
Drainsource breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 200 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 1.5 3.5 V
Drainsource ON resistance RDS (ON) VGS = 10 V, ID = 5.5 A 0.15 0.26
Forward transfer admittance |Yfs| VDS = 10 V, ID = 5.5 A 5.0 10 S
Input capacitance Ciss 1200
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz 100 pF

Output capacitance Coss 290

Rise time tr 15

Turnon time ton 25

Switching time ns
Fall time tf 10

Turnoff time toff 75

Total gate charge

Qg 30
(gatesource plus gatedrain)
VDD 100 V, VGS = 10 V, ID = 10 A nC
Gatesource charge Qgs 20
Gatedrain (miller) Charge Qgd 10

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current

IDR 11 A
(Note 1)
Pulse drain reverse current
IDRP 33 A
(Note 1)
Forward voltage (diode) VDSF IDR = 11 A, VGS = 0 V 2.0 V
Reverse recovery time trr 175 ns
IDR = 11 A, VGS = 0 V, IDR / dt = 100 A / s
Reverse recovery charge Qrr 1.3 C

Marking

K2965 Part No. (or abbreviation code)

Lot No.

A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.

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ID VDS ID VDS
20 20
Common source 15 10 5 15 5 Common source
Tc = 25C Tc = 25C
Pulse test 10 Pulse test
16 16
(A)

(A)
4.5 4.5
ID

ID
12 12
Drain current

Drain current
4.25 4.25

8 8
4 4

4 4
VGS = 3.5 V VGS = 3.5 V

0 0
0 1 2 3 4 5 0 4 8 12 16 20

Drainsource voltage VDS (V) Drainsource voltage VDS (V)

ID VGS VDS VGS

20 6
Common source Common source
VDS = 10 V Tc = 25C
VDS (V)

Pulse test
5 Pulse test
16
(A)

4
ID

12
Drainsource voltage

100 Tc = 55C
Drain current

8
2 ID = 11 A
25

4 5.5
1
2.5

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gatesource voltage VGS (V) Gatesource voltage VGS (V)

Yfs ID RDS (ON) ID

100 1
Common source Common source
(S)

VDS = 10 V Tc = 25C
Pulse test Pulse test
Yfs

Drainsource ON resistance

Tc = 55C
VGS = 10, 15 V
Forward transfer admittacne

RDS (ON) ()

25

10 100 0.1

1 0.01
1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) Tc IDR VDS

0.5 100
Common source Common source
VGS = 10 V Tc = 25C

(A)
Pulse test
Pulse test
Drainsource ON resistance

0.4

IDR
10
RDS (ON) ()

ID = 11 A

Drain reverse current

0.3

5.5
0.2 10
2.5
1 5

3
0.1

VGS = 0, 1 V

0 0.1
80 40 0 40 80 120 160 0 0.2 0.4 0.6 0.8 1.0 1.2

Case temperature Tc (C) Drainsource voltage VDS (V)

Capacitance VDS Vth Tc

10000 5
Common source
VDS = 10 V
Vth (V)

ID = 1 mA
4 Pulse test
(pF)

Ciss
1000
Gate threshold voltage

3
C
Capacitance

Coss
100
1
Common source
VGS = 0 V
f = 1 MHz
Crss 0
Tc = 25C 80 40 0 40 80 120 160
10
0.1 1 10 100 Case temperature Tc (C)

Drainsource voltage VDS (V)

PD Tc Dynamic input/output characteristics

50 200 Common source 20
ID = 11 A
(W)

Tc = 25C
VDS (V)

(V)

VDS Pulse test

40 160 16
PD

VGS
Drain power dissipation

30 120 12
Drainsource voltage

Gatesource voltage

VDD = 40 V 160

20 80 8
80

10 40 4
VGS

0 0 0
0 40 80 120 160 200 0 10 20 30 40

Case temperature Tc (C) Total gate charge Qg (nC)

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Safe operating area EAS Tch

100 200

ID max (Pulsed) *
EAS (mJ)

160

100 s *
ID max (Continuous) *
10
120
Avalanche energy
(A)

1 ms *

80
ID
Drain current

1
DC operation 40
Tc = 25C

0
25 50 75 100 125 150
0.1
* Single nonrepetitive pulse Channel temperature (initial) Tch (C)
Tc = 25C
Curves must be derated
linearly with increase in
temperature. VDSS max
0.01
BVDSS
1 10 100 1000 15 V
Drainsource voltage VDS (V) IAR
15 V
VDD VDS

Test circuit Wave form

1 2 B VDSS
RG = 25 AS = L I

2 B VDSS V DD
VDD = 50 V, L = 1.53 mH

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RESTRICTIONS ON PRODUCT USE 20070701-EN

The information contained herein is subject to change without notice.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability
Handbook etc.

The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customers own risk.

The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.

The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.

Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.

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