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SEMICONDUCTOR TECHNICAL DATA by MPSW45/D

   

NPN Silicon 



COLLECTOR 3

BASE
*Motorola Preferred Device
2

EMITTER 1

MAXIMUM RATINGS
Rating Symbol MPSW45 MPSW45A Unit
Collector Emitter Voltage VCES 40 50 Vdc 1
2
3
Collector Base Voltage VCBO 50 60 Vdc
Emitter Base Voltage VEBO 12 12 Vdc CASE 2905, STYLE 1
Collector Current Continuous IC 1.0 1.0 Adc TO92 (TO226AE)

Total Device Dissipation @ TA = 25C PD 1.0 Watts

Derate above 25C 8.0 mW/C
Total Device Dissipation @ TC = 25C PD 2.5 Watts
Derate above 25C 20 mW/C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 125 C/W
Thermal Resistance, Junction to Case RqJC 50 C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage V(BR)CES Vdc
(IC = 100 Adc, VBE = 0) MPSW45 40
MPSW45A 50
Collector Base Breakdown Voltage V(BR)CBO Vdc
(IC = 100 mAdc, IE = 0) MPSW45 50
MPSW45A 60
Emitter Base Breakdown Voltage V(BR)EBO 12 Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICBO nAdc
(VCB = 30 Vdc, IE = 0) MPSW45 100
(VCB = 40 Vdc, IE = 0) MPSW45A 100
Emitter Cutoff Current IEBO 100 nAdc
(VEB = 10 Vdc, IC = 0)

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1996
 
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain hFE
(IC = 200 mAdc, VCE = 5.0 Vdc) 25,000 150,000
(IC = 500 mAdc, VCE = 5.0 Vdc) 15,000
(IC = 1.0 Adc, VCE = 5.0 Vdc) 4,000
Collector Emitter Saturation Voltage VCE(sat) 1.5 Vdc
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base Emitter Saturation Voltage VBE(sat) 2.0 Vdc
(IC = 1.0 Adc, IB = 2.0 mAdc)
Base Emitter On Voltage VBE(on) 2.0 Vdc
(IC = 1.0 Adc, VCE = 5.0 Vdc)

SMALL SIGNAL CHARACTERISTICS

CurrentGain Bandwidth Product fT 100 MHz
(IC = 200 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
CollectorBase Capacitance Ccb 6.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

RS
in

en
IDEAL
TRANSISTOR

Figure 1. Transistor Noise Model

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data

  
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25C)

500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS 0 1.0
200
0.7
en, NOISE VOLTAGE (nV)

i n, NOISE CURRENT (pA)

0.5
100 IC = 1.0 mA
10 A 0.3
50 0.2

100 A 100 A
0.1
20
0.07
IC = 1.0 mA 10 A
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)

Figure 2. Noise Voltage Figure 3. Noise Current

200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)

BANDWIDTH = 10 Hz TO 15.7 kHz

12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)

10
70 IC = 10 A 10 A
8.0
50
100 A
6.0
30 100 A
4.0 IC = 1.0 mA
20
1.0 mA
2.0

10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100
RS, SOURCE RESISTANCE (k) 0 RS, SOURCE RESISTANCE (k) 0

Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3

 
SMALLSIGNAL CHARACTERISTICS

20 4.0
VCE = 5.0 V

|h fe |, SMALLSIGNAL CURRENT GAIN

TJ = 25C f = 100 MHz
10 2.0 TJ = 25C
C, CAPACITANCE (pF)

7.0 Cibo
1.0
5.0 Cobo 0.8
0.6

3.0 0.4

2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance Figure 7. High Frequency Current Gain

VCE , COLLECTOREMITTER VOLTAGE (VOLTS)

200 k 3.0
TJ = 125C TJ = 25C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN

50 k 25C

30 k 2.0
20 k
1.5
10 k
7.0 k
55C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (A)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

1.6 1.0
RV, TEMPERATURE COEFFICIENTS (mV/C)

*APPLIES FOR IC/IB hFE/3.0 25C TO 125C

TJ = 25C
1.4 2.0 *RqVC FOR VCE(sat)
V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 1000 55C TO 25C

1.2 3.0
VBE(on) @ VCE = 5.0 V 25C TO 125C
1.0 4.0
qVB FOR VBE
0.8 5.0 55C TO 25C
VCE(sat) @ IC/IB = 1000

0.6 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 10. On Voltages Figure 11. Temperature Coefficients

4 Motorola SmallSignal Transistors, FETs and Diodes Device Data

  
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
r(t), TRANSIENT THERMAL

0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZJC(t) = r(t) RJC TJ(pk) TC = P(pk) ZJC(t)
0.02 ZJA(t) = r(t) RJA TJ(pk) TA = P(pk) ZJA(t)

0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)

Figure 12. Thermal Response

1.0 k
FIGURE A
700 1.0 ms
500
IC, COLLECTOR CURRENT (mA)

tP
300 TC = 25C 100 s
TA = 25C PP PP
200 1.0 s

100
70
50
t1
30
CURRENT LIMIT
20 THERMAL LIMIT 1/f

+ t1 f + ttP1
SECOND BREAKDOWN LIMIT
10 DUTY CYCLE
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VCE, COLLECTOREMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP

Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data

Motorola SmallSignal Transistors, FETs and Diodes Device Data 5

 
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
B 4. DIMENSION F APPLIES BETWEEN P AND L.
R DIMENSIONS D AND J APPLY BETWEEN L AND K
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
SEATING IN P AND BEYOND DIMENSION K MINIMUM.
P PLANE
L INCHES MILLIMETERS
F DIM MIN MAX MIN MAX
K A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
D 0.018 0.022 0.46 0.56
F 0.016 0.019 0.41 0.48
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
H J 0.018 0.024 0.46 0.61
J K 0.500 12.70
L 0.250 6.35
V N 0.080 0.105 2.04 2.66
P 0.100 2.54
SECTION XX
1 2 3 N C R
V
0.135
0.135


3.43
3.43


N
STYLE 1:
CASE 02905 PIN 1. EMITTER
2. BASE
(TO226AE) 3. COLLECTOR
ISSUE AD

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*MPSW45/D*
MPSW45/D
6 Motorola SmallSignal Transistors, FETs and Diodes Device Data