2SB857, 2SB858

Silicon PNP Triple Diffused

Application

Low frequency power amplifier complementary pair with 2SD1133 and 2SD1134

Outline

TO-220AB

1. Base
2. Collector
(Flange)
1
2 3 3. Emitter

Absolute Maximum Ratings (Ta = 25C)

Ratings
Item Symbol 2SB857 2SB858 Unit
Collector to base voltage VCBO 70 70 V
Collector to emitter voltage VCEO 50 60 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 4 4 A
Collector peak current I C(peak) 8 8 A
1
Collector power dissipation PC * 40 40 W
Junction temperature Tj 150 150 C
Storage temperature Tstg 45 to +150 45 to +150 C
Note: 1. Value at T C = 25C
2SB857, 2SB858
Electrical Characteristics (Ta = 25C)
2SB857 2SB858
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 70 70 V I C = 10 A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 50 60 V I C = 50 mA, RBE =
breakdown voltage
Emitter to base V(BR)EBO 5 5 V I E = 10 A, IC = 0
breakdown voltage
Collector cutoff current I CBO 1 1 A VCB = 50 V, IE = 0
1
DC current transfer ratio hFE1* 60 320 60 320 VCE = I C = 1 A*2
hFE2 35 35 4 V I C = 0.1 A*2
Collector to emitter VCE(sat) 1 1 V I C = 2 A, IB = 0.2 A*2
saturation voltage
Base to emitter voltage VBE 1 1 V VCE = 4 V, IC = 1 A*2
Gain bandwidth product f T 15 15 MHz VCE = 4 V,
I C = 0.5 A*2
Notes: 1. The 2SB857 and 2SB858 are grouped by h FE1 as follows.
2. Pulse test

B C D
60 to 120 100 to 200 160 to 320

Maximum Collector Dissipation Curve Area of Safe Operation

60 5
(10 V, 4 A)
Collector power dissipation Pc (W)

IC max (Continuous) D
C
2 O
Collector Current IC (A)

pe
TC = 25C ra
40 (20 V, 2 A) tio
1.0 n
(6
0V

0.5
, 0

(50 V, 0.24 A)
.15

20
0.2
A)

0.1
2SB857
2SB858
0.05
0 50 100 150 1 2 5 10 20 50 100
Case Temperature TC (C) Collector to emitter Voltage VCE (V)

2
 2SB857, 2SB858

Typical Output Characteristics Typical Transfer Characteristics

5 5

Pc
TC = 25C VCE = 4 V

=4
70

0W
2
4 60
Collector Current IC (A)

Collector current IC (A)

50 1.0

3 40 0.5

C
30

TC = 75
0.2
2 20 0.1

10 mA 0.05
1

25
25
0.02
IB = 0
0 0.01
2 4 6 8 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Collector to emitter Voltage VCE (V) Base to emitter voltage VBE (V)

DC Current Transfer Ratio vs. Collector to Emitter Saturation

Collector Current Voltage vs. Collector Current
1,000 1.4
Collector to emitter saturation voltage

500 VCE = 4 V IC = 10 IB
1.2
DC current transfer ratio hFE

TC = 75C
200 TC = 75C 1.0
25
VCE (sat) (V)

100 25 0.8 25
25
50 0.6

20 0.4

10 0.2

5 0
0.010.02 0.050.1 0.2 0.5 1.0 2 4 0.010.02 0.05 0.1 0.2 0.5 1.0 2 5
Collector current IC (A) Collector current IC (A)

3
 Unit: mm

11.5 MAX

10.16 0.2 4.44 0.2

2.79 0.2

9.5
3.6 -0.08
+0.1
1.26 0.15
8.0
0.1
+0.2
6.4

15.0 0.3
1.27
18.5 0.5

2.7 MAX

1.5 MAX
14.0 0.5
7.8 0.5

0.76 0.1

2.54 0.5 2.54 0.5 0.5 0.1

Hitachi Code TO-220AB

JEDEC Conforms
EIAJ Conforms
Weight (reference value) 1.8 g
Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third partys rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachis sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http:semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm
Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic components Group 16 Collyer Quay #20-00 Group III (Electronic Components)
179 East Tasman Drive, Dornacher Strae 3 Hitachi Tower 7/F., North Tower, World Finance Centre,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 Harbour City, Canton Road, Tsim Sha Tsui,
Tel: <1> (408) 433-1990 Germany Tel: 535-2100 Kowloon, Hong Kong
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax: 535-1533 Tel: <852> (2) 735 9218
Fax: <49> (89) 9 29 30 00 Fax: <852> (2) 730 0281
Hitachi Europe Ltd. Hitachi Asia Ltd. Telex: 40815 HITEC HX
Electronic Components Group. Taipei Branch Office
Whitebrook Park 3F, Hung Kuo Building. No.167,
Lower Cookham Road Tun-Hwa North Road, Taipei (105)
Maidenhead Tel: <886> (2) 2718-3666
Berkshire SL6 8YA, United Kingdom Fax: <886> (2) 2718-8180
Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
This datasheet has been downloaded from:
www.EEworld.com.cn

Free Download
Daily Updated Database
100% Free Datasheet Search Site
100% Free IC Replacement Search Site
Convenient Electronic Dictionary
Fast Search System
www.EEworld.com.cn

All Datasheets Cannot Be Modified Without Permission

Copyright Each Manufacturing Company