Beruflich Dokumente
Kultur Dokumente
05428-001
Superb temperature coefficient 1. NC = NO CONNECT
A grade: 10 ppm/C 2. TP = TEST PIN (DO NOT CONNECT)
05428-002
Precision data acquisition systems 1. NC = NO CONNECT
2. TP = TEST PIN (DO NOT CONNECT)
High resolution data converters
Figure 2. 8-Lead MSOP (RM-Suffix)
Battery-powered instrumentation
Portable medical instruments
Industrial process control systems
Precision instruments
Optical control circuits
GENERAL DESCRIPTION
The ADR44x series is a family of XFET voltage references Offered in two electrical grades, the ADR44x family is avail-
featuring ultralow noise, high accuracy, and low temperature able in 8-lead MSOP and narrow SOIC packages. All versions
drift performance. Using Analog Devices, Inc., patented are specified over the extended industrial temperature range of
temperature drift curvature correction and XFET (eXtra 40C to +125C.
implanted junction FET) technology, voltage change vs.
Table 1. Selection Guide
temperature nonlinearity in the ADR44x is greatly minimized.
Output Initial Temperature
The XFET references offer better noise performance than Voltage Accuracy Coefficient
buried Zener references, and XFET references operate off Model (V) (mV) (ppm/C)
low supply voltage headroom (0.5 V). This combination of ADR440A 2.048 3 10
features makes the ADR44x family ideally suited for precision ADR440B 2.048 1 3
signal conversion applications in high-end data acquisition ADR441A 2.500 3 10
systems, optical networks, and medical applications. ADR441B 2.500 1 3
The ADR44x family has the capability to source up to 10 mA of ADR443A 3.000 4 10
output current and sink up to 5 mA. It also comes with a trim ADR443B 3.000 1.2 3
terminal to adjust the output voltage over a 0.5% range without ADR444A 4.096 5 10
compromising performance. ADR444B 4.096 1.6 3
ADR445A 5.000 6 10
ADR445B 5.000 2 3
TABLE OF CONTENTS
Features .............................................................................................. 1 Theory of Operation ...................................................................... 14
REVISION HISTORY
9/2016Rev. E to Rev. F 9/2006Rev. 0 to Rev. A
Changes to Figure 38 ...................................................................... 16 Updated Format .................................................................. Universal
Changes to Features ..........................................................................1
11/2010Rev. D to Rev. E Changes to Pin Configurations .......................................................1
Deleted Negative Reference Section............................................. 15 Changes to Specifications Section ...................................................3
Deleted Figure 37; Renumbered Sequentially ............................ 15 Changes to Figure 4 and Figure 5 ....................................................9
Inserted Figure 6 and Figure 7 .........................................................9
3/2010Rev. C to Rev. D Changes to Figure 15...................................................................... 11
Changes to Figure 37 ...................................................................... 15 Changes to Power Dissipation Considerations Section ............ 14
Updated Outline Dimensions ....................................................... 18 Changes to Figure 35 and Figure 36............................................. 15
Changes to Figure 38 and Table 9................................................. 16
3/2008Rev. B to Rev. C Updated Outline Dimensions ....................................................... 18
Changes to Table 8 ............................................................................ 8 Changes to Ordering Guide .......................................................... 19
Change to Figure 11 ....................................................................... 10
Changes to Figure 36 ...................................................................... 15 10/2005Revision 0: Initial Version
Changes to Figure 39 ...................................................................... 16
Changes to Figure 41 ...................................................................... 17
Updated Outline Dimensions ....................................................... 18
8/2007Rev. A to Rev. B
Change to Table 2, Ripple Rejection Ratio Specification ............ 3
Change to Table 3, Ripple Rejection Ratio Specification ............ 4
Change to Table 4, Ripple Rejection Ratio Specification ............ 5
Change to Table 5, Ripple Rejection Ratio Specification ............ 6
Change to Table 6, Ripple Rejection Ratio Specification ............ 7
Rev. F | Page 2 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
SPECIFICATIONS
ADR440 ELECTRICAL CHARACTERISTICS
VIN = 3 V to 18 V, TA = 25C, CIN = COUT = 0.1 F, unless otherwise noted.
Table 2.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 2.045 2.048 2.051 V
B Grade 2.047 2.048 2.049 V
INITIAL ACCURACY VOERR
A Grade 3 mV
0.15 %
B Grade 1 mV
0.05 %
TEMPERATURE DRIFT TCVO
A Grade 40C < TA < +125C 2 10 ppm/C
B Grade 40C < TA < +125C 1 3 ppm/C
LINE REGULATION VO/VIN 40C < TA < +125C 20 +10 +20 ppm/V
LOAD REGULATION VO/ILOAD ILOAD = 0 mA to 10 mA, VIN = 3.5 V,
40C < TA < +125C 50 +50 ppm/mA
VO/ILOAD ILOAD = 0 mA to 5 mA, VIN = 3.5 V,
40C < TA < +125C 50 +50 ppm/mA
QUIESCENT CURRENT IIN No load, 40C < TA < +125C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1 V p-p
VOLTAGE NOISE DENSITY eN 1 kHz 45 nV/Hz
TURN-ON SETTLING TIME tR 10 s
LONG-TERM STABILITY1 VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 70 ppm
RIPPLE REJECTION RATIO RRR fIN = 1 kHz 80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3 18 V
SUPPLY VOLTAGE HEADROOM VIN VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
Rev. F | Page 3 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
ADR441 ELECTRICAL CHARACTERISTICS
VIN = 3 V to 18 V, TA = 25C, CIN = COUT = 0.1 F, unless otherwise noted.
Table 3.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 2.497 2.500 2.503 V
B Grade 2.499 2.500 2.501 V
INITIAL ACCURACY VOERR
A Grade 3 mV
0.12 %
B Grade 1 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade 40C < TA < +125C 2 10 ppm/C
B Grade 40C < TA < +125C 1 3 ppm/C
LINE REGULATION VO/VIN 40C < TA < +125C 10 20 ppm/V
LOAD REGULATION VO/ILOAD ILOAD = 0 mA to 10 mA, VIN = 4 V,
40C < TA < +125C 50 +50 ppm/mA
VO/ILOAD ILOAD = 0 mA to 5 mA, VIN = 4 V,
40C < TA < +125C 50 +50 ppm/mA
QUIESCENT CURRENT IIN No load, 40C < TA < +125C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.2 V p-p
VOLTAGE NOISE DENSITY eN 1 kHz 48 nV/Hz
TURN-ON SETTLING TIME tR 10 s
LONG-TERM STABILITY1 VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 70 ppm
RIPPLE REJECTION RATIO RRR fIN = 1 kHz 80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3 18 V
SUPPLY VOLTAGE HEADROOM VIN VO 500 mV
1
The long-term stability specification is noncumulative. The drift in subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
Rev. F | Page 4 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
ADR443 ELECTRICAL CHARACTERISTICS
VIN = 3.5 V to 18 V, TA = 25C, CIN = COUT = 0.1 F, unless otherwise noted.
Table 4.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 2.996 3.000 3.004 V
B Grade 2.9988 3.000 3.0012 V
INITIAL ACCURACY VOERR
A Grade 4 mV
0.13 %
B Grade 1.2 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade 40C < TA < +125C 2 10 ppm/C
B Grade 40C < TA < +125C 1 3 ppm/C
LINE REGULATION VO/VIN 40C < TA < +125C 10 20 ppm/V
LOAD REGULATION VO/ILOAD ILOAD = 0 mA to 10 mA, VIN = 5 V,
40C < TA < +125C 50 +50 ppm/mA
VO/ILOAD ILOAD = 0 mA to 5 mA, VIN = 5 V,
40C < TA < +125C 50 +50 ppm/mA
QUIESCENT CURRENT IIN No load, 40C < TA < +125C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.4 V p-p
VOLTAGE NOISE DENSITY eN 1 kHz 57.6 nV/Hz
TURN-ON SETTLING TIME tR 10 s
LONG-TERM STABILITY1 VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 70 ppm
RIPPLE REJECTION RATIO RRR fIN = 1 kHz 80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 3.5 18 V
SUPPLY VOLTAGE HEADROOM VIN VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
Rev. F | Page 5 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
ADR444 ELECTRICAL CHARACTERISTICS
VIN = 4.6 V to 18 V, TA = 25C, CIN = COUT = 0.1 F, unless otherwise noted.
Table 5.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 4.091 4.096 4.101 V
B Grade 4.0944 4.096 4.0976 V
INITIAL ACCURACY VOERR
A Grade 5 mV
0.13 %
B Grade 1.6 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade 40C < TA < +125C 2 10 ppm/C
B Grade 40C < TA < +125C 1 3 ppm/C
LINE REGULATION VO/VIN 40C < TA < +125C 10 20 ppm/V
LOAD REGULATION VO/ILOAD ILOAD = 0 mA to 10 mA, VIN = 5.5 V,
40C < TA < +125C 50 +50 ppm/mA
VO/ILOAD ILOAD = 0 mA to 5 mA, VIN = 5.5 V,
40C < TA < +125C 50 +50 ppm/mA
QUIESCENT CURRENT IIN No load, 40C < TA < +125C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 1.8 V p-p
VOLTAGE NOISE DENSITY eN 1 kHz 78.6 nV/Hz
TURN-ON SETTLING TIME tR 10 s
LONG-TERM STABILITY1 VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 70 ppm
RIPPLE REJECTION RATIO RRR fIN = 1 kHz 80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 4.6 18 V
SUPPLY VOLTAGE HEADROOM VIN VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
Rev. F | Page 6 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
ADR445 ELECTRICAL CHARACTERISTICS
VIN = 5.5 V to 18 V, TA = 25C, CIN = COUT = 0.1 F, unless otherwise noted.
Table 6.
Parameter Symbol Conditions Min Typ Max Unit
OUTPUT VOLTAGE VO
A Grade 4.994 5.000 5.006 V
B Grade 4.998 5.000 5.002 V
INITIAL ACCURACY VOERR
A Grade 6 mV
0.12 %
B Grade 2 mV
0.04 %
TEMPERATURE DRIFT TCVO
A Grade 40C < TA < +125C 2 10 ppm/C
B Grade 40C < TA < +125C 1 3 ppm/C
LINE REGULATION VO/VIN 40C < TA < +125C 10 20 ppm/V
LOAD REGULATION VO/ILOAD ILOAD = 0 mA to 10 mA, VIN = 6.5 V,
40C < TA < +125C 50 +50 ppm/mA
VO/ILOAD ILOAD = 0 mA to 5 mA, VIN = 6.5 V,
40C < TA < +125C 50 +50 ppm/mA
QUIESCENT CURRENT IIN No load, 40C < TA < +125C 3 3.75 mA
VOLTAGE NOISE eN p-p 0.1 Hz to 10 Hz 2.25 V p-p
VOLTAGE NOISE DENSITY eN 1 kHz 90 nV/Hz
TURN-ON SETTLING TIME tR 10 s
LONG-TERM STABILITY1 VO 1000 hours 50 ppm
OUTPUT VOLTAGE HYSTERESIS VO_HYS 70 ppm
RIPPLE REJECTION RATIO RRR fIN = 1 kHz 80 dB
SHORT CIRCUIT TO GND ISC 27 mA
SUPPLY VOLTAGE OPERATING RANGE VIN 5.5 18 V
SUPPLY VOLTAGE HEADROOM VIN VO 500 mV
1
The long-term stability specification is noncumulative. The drift in the subsequent 1000-hour period is significantly lower than in the first 1000-hour period.
Rev. F | Page 7 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
Rev. F | Page 8 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
4.0975
2.050
4.0970
DEVICE 1
2.049
4.0965
4.0950
2.046
4.0945
05428-005
05428-042
2.045 4.0940
40 20 0 20 40 60 80 100 120 40 25 10 5 20 35 50 65 80 95 110 125
TEMPERATURE (C)
TEMPERATURE (C)
Figure 3. ADR440 Output Voltage vs. Temperature Figure 6. ADR444 Output Voltage vs. Temperature
2.5020 5.006
2.5010 5.002
2.5005 5.000
2.5000 4.998
2.4995 4.996
05428-043
05428-003
2.4990 4.994
40 25 10 5 20 35 50 65 80 95 110 125 40 20 0 20 40 60 80 100 120
TEMPERATURE (C) TEMPERATURE (C)
Figure 4. ADR441 Output Voltage vs. Temperature Figure 7. ADR445 Output Voltage vs. Temperature
3.0020 4.0
3.0015
3.0010 3.5
DEVICE 1
SUPPLY CURRENT (mA)
OUTPUT VOLTAGE (V)
+125C
3.0005
DEVICE 2
3.0 +25C
3.0000
DEVICE 3
2.9995
40C
2.9990 2.5
2.9985
05428-006
05428-004
2.9980 2.0
40 25 10 5 20 35 50 65 80 95 110 125 4 6 8 10 12 14 16 18
TEMPERATURE (C) INPUT VOLTAGE (V)
Figure 5. ADR443 Output Voltage vs. Temperature Figure 8. ADR441 Supply Current vs. Input Voltage
Rev. F | Page 9 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
4.0 10
3.0
2.5
2
05428-007
05428-010
2.0 0
40 25 10 5 20 35 50 65 80 95 110 125 40 25 10 5 20 35 50 65 80 95 110 125
TEMPERATURE (C) TEMPERATURE (C)
Figure 9. ADR441 Supply Current vs. Temperature Figure 12. ADR441 Line Regulation vs. Temperature
3.5 60
ILOAD = 0mA TO 10mA
3.4
55
3.3
3.2
50
3.1 +125C
3.0 45
VIN = 6V
2.9
+25C
40
2.8
2.7 40C
35
05428-008
05428-011
2.6
2.5 30
5.3 7.3 9.3 11.3 13.3 15.3 17.3 19.3 40 25 10 5 20 35 50 65 80 95 110 125
INPUT VOLTAGE (V) TEMPERATURE (C)
Figure 10. ADR445 Supply Current vs. Input Voltage Figure 13. ADR441 Load Regulation vs. Temperature
3.25 7
6
3.15
LINE REGULATION (ppm/V)
SUPPLY CURRENT (mA)
3.05
4
3
2.95
2.85
1
05428-009
05428-012
2.75 0
40 25 10 5 20 35 50 65 80 95 110 125 40 25 10 5 20 35 50 65 80 95 110 125
TEMPERATURE (C) TEMPERATURE (C)
Figure 11. ADR445 Supply Current vs. Temperature Figure 14. ADR445 Line Regulation vs. Temperature
Rev. F | Page 10 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
50 1.0
VIN = 6V
40 0.9
ILOAD = 0mA TO +10mA
30 0.8
LOAD REGULATION (ppm/mA)
10 0.6
0 0.5 +25C
10 0.4
20 0.3 40C
ILOAD = 0mA TO 5mA
30 0.2
05428-013
05428-016
40 0.1
50 0
40 25 10 5 20 35 50 65 80 95 110 125 5 0 5 10
TEMPERATURE (C) LOAD CURRENT (mA)
Figure 15. ADR445 Load Regulation vs. Temperature Figure 18. ADR445 Minimum Input/Output
Differential Voltage vs. Load Current
0.7 0.5
NO LOAD
0.6
0.4
DIFFERENTIAL VOLTAGE (V)
+125C
0.3
0.4 +25C
40C
0.3
0.2
0.2
0.1
0.1
05428-014
05428-017
0 0
10 5 0 5 10 40 25 10 5 20 35 50 65 80 95 110 125
LOAD CURRENT (mA) TEMPERATURE (C)
Figure 16. ADR441 Minimum Input/Output Figure 19. ADR445 Minimum Headroom vs. Temperature
Differential Voltage vs. Load Current
0.5
0.4
MINIMUM HEADROOM (V)
VIN = 5V/DIV
0.3
0.2
05428-018
TIME = 10s/DIV
0
40 25 10 5 20 35 50 65 80 95 110 125
TEMPERATURE (C)
Figure 17. ADR441 Minimum Headroom vs. Temperature Figure 20. ADR441 Turn-On Response
Rev. F | Page 11 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
VIN = 5V/DIV
5mV/DIV
VOUT = 1V/DIV
05428-019
05428-023
TIME = 200s/DIV TIME = 200s/DIV
Figure 21. ADR441 Turn-Off Response Figure 24. ADR441 Load Transient Response
VIN = 5V/DIV
5mV/DIV
VOUT = 1V/DIV
05428-020
05428-022
TIME = 200s/DIV TIME = 200s/DIV
Figure 22. ADR441 Turn-On Response Figure 25. ADR441 Load Transient Response
CIN = 0.1F
COUT = 10F
2V/DIV
4V 1V/DIV
CH 1 p-p
1.18V
2mV/DIV
05428-024
05428-021
TIME = 1s/DIV
TIME = 100s/DIV
Figure 23. ADR441 Line Transient Response Figure 26. ADR441 0.1 Hz to 10.0 Hz Voltage Noise
Rev. F | Page 12 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
16
14
12
NUMBER OF PARTS
50V/DIV 10
CH 1 p-p
49V 8
05428-025
05428-028
TIME = 1s/DIV
90
30
10
110
150
10
30
50
70
90
70
50
130
150
130
110
DEVIATION (ppm)
Figure 27. ADR441 10 Hz to 10 kHz Voltage Noise Figure 30. ADR441 Typical Output Voltage Hysteresis
10
OUTPUT IMPEDANCE ()
7
ADR445
1V/DIV
6
CH 1 p-p
5
2.24V
ADR443
4
2
ADR441
05428-026
05428-029
TIME = 1s/DIV 1
0
10 100 1k 10k 100k
FREQUENCY (Hz)
Figure 28. ADR445 0.1 Hz to 10.0 Hz Voltage Noise Figure 31. Output Impedance vs. Frequency
10
20
RIPPLE REJECTION RATIO (dB)
30
50V/DIV
40
CH 1 p-p
66V 50
60
70
80
05428-027
05428-030
TIME = 1s/DIV 90
100
100 1k 10k 100k 1M
FREQUENCY (Hz)
Figure 29. ADR445 10 Hz to 10 kHz Voltage Noise Figure 32. Ripple Rejection Ratio vs. Frequency
Rev. F | Page 13 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
THEORY OF OPERATION
The ADR44x series of references uses a new reference generation POWER DISSIPATION CONSIDERATIONS
technique known as XFET (eXtra implanted junction FET). The ADR44x family of references is guaranteed to deliver load
This technique yields a reference with low dropout, good currents to 10 mA with an input voltage that ranges from 3 V to
thermal hysteresis, and exceptionally low noise. The core of the 18 V. When these devices are used in applications at higher
XFET reference consists of two junction field-effect transistors currents, use the following equation to account for the
(JFETs), one of which has an extra channel implant to raise its temperature effects of increases in power dissipation:
pinch-off voltage. By running the two JFETs at the same drain TJ = PD JA + TA (2)
current, the difference in pinch-off voltage can be amplified
and used to form a highly stable voltage reference. where:
TJ and TA are the junction and ambient temperatures,
The intrinsic reference voltage is around 0.5 V with a negative respectively.
temperature coefficient of about 120 ppm/C. This slope is PD is the device power dissipation.
essentially constant to the dielectric constant of silicon, and it can JA is the device package thermal resistance.
be closely compensated for by adding a correction term generated
in the same fashion as the proportional-to-absolute temperature BASIC VOLTAGE REFERENCE CONNECTIONS
(PTAT) term used to compensate band gap references. The The ADR44x family requires a 0.1 F capacitor on the input
advantage of an XFET reference is its correction term, which is and the output for stability. Although not required for operation,
approximately 20 times lower and requires less correction than a 10 F capacitor at the input can help with line voltage
that of a band gap reference. Because most of the noise of a band transient performance.
gap reference comes from the temperature compensation
circuitry, the XFET results in much lower noise. TP 1 ADR440/ 8 TP
ADR441/
Figure 33 shows the basic topology of the ADR44x series. The
VIN 2 ADR443/ 7 NC
+ ADR444/ VOUT
10F 0.1F NC 3
temperature correction term is provided by a current source with ADR445 6
GND TOP VIEW 0.1F
a value designed to be proportional to the absolute temperature. 4
(Not to Scale)
5 TRIM
05428-034
1. NC = NO CONNECT
VOUT = G (VP R1 IPTAT) (1) 2. TP = TEST PIN (DO NOT CONNECT)
R2
Upon application of power (cold start), the time required for
* the output voltage to reach its final value within a specified
error band is defined as the turn-on settling time. Two compo-
VP R3
R1 nents normally associated with this are the time for the active
circuits to settle and the time for the thermal gradients on the
05428-033
*EXTRA CHANNEL IMPLANT chip to stabilize. Figure 20 and Figure 21 show the turn-on and
VOUT = G (VP R1 IPTAT) GND turn-off settling times for the ADR441.
Figure 33. Simplified Schematic Device
Rev. F | Page 14 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
APPLICATIONS INFORMATION
+VDD
OUTPUT ADJUSTMENT
The ADR44x family features a TRIM pin that allows the user to 2
adjust the output voltage of the part over a limited range. This VIN
allows errors from the reference and overall system errors to be ADR440/
trimmed out by connecting a potentiometer between the output ADR441/
ADR443/
and the ground, with the wiper connected to the TRIM pin. ADR444/
0.1F ADR445
Figure 35 shows the optimal trim configuration. R1 allows fine
VOUT 6 +5V
adjustment of the output and is not always required. RP should R1 R2
GND 0.1F 10k 10k
be sufficiently large so that the maximum output current from
4
the ADR44x is not exceeded. +10V
5V
0.1F
05428-036
R3
2 5k
VIN 10V
VOUT 6 VO = 0.5% Figure 36. ADR44x Bipolar Outputs
ADR440/ 0.1F
ADR441/ PROGRAMMABLE VOLTAGE SOURCE
ADR443/
ADR444/ To obtain different voltages than those offered by the ADR44x,
ADR445 some extra components are needed. In Figure 37, two potenti-
RP
TRIM 5
R1 10k ometers are used to set the desired voltage and the buffering
GND
100k R2
4
1k amplifier provides current drive. The potentiometer connected
05428-035
Rev. F | Page 15 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
Table 9. Digital Potentiometer Parts HIGH VOLTAGE FLOATING CURRENT SOURCE
No. of No. of VDD1 Use the circuit in Figure 39 to generate a floating current source
Part No. Channels Positions ITF R (k) (V)
with minimal self heating. This particular configuration can
AD5251 2.00 64.00 I2C 1, 10, 50, 100 5.5
operate on high supply voltages, determined by the breakdown
AD5207 2.00 256.00 SPI 10, 50, 100 5.5
voltage of the N-channel JFET.
AD5242 2.00 256.00 I2C 10, 100, 1M 5.5
+VS
AD5262 2.00 256.00 SPI 20, 50, 200 15
SST111
AD5282 2.00 256.00 I2C 20, 50, 100 15 VISHAY
AD5252 2.00 256.00 I2C 1, 10, 50, 100 5.5
2
AD5232 2.00 256.00 SPI 10, 50, 100 5.5 VIN
AD5235 2.00 1024.00 SPI 25, 250 5.5 ADR440/
ADN2850 2.00 1024.00 SPI 25, 250 5.5 ADR441/
ADR443/
1
ADR444/
Can also use a negative supply. ADR445
VOUT 6
OP90 2N3904
Adding a negative supply to the operational amplifier allows GND
the user to produce a negative programmable reference 4
05428-040
minimize errors over temperature. VS
05428-041
ADR445
VOUT 6
Figure 40. Boosted Output Reference
GND
4
0.1F ILOAD Higher current drive capability can be obtained without
05428-039
Rev. F | Page 16 of 18
Data Sheet ADR440/ADR441/ADR443/ADR444/ADR445
OUTLINE DIMENSIONS
5.00 (0.1968)
4.80 (0.1890)
8 5
4.00 (0.1574) 6.20 (0.2441)
3.80 (0.1497) 1 5.80 (0.2284)
4
012407-A
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
3.20
3.00
2.80
8 5 5.15
3.20 4.90
3.00 4.65
2.80 1
4
PIN 1
IDENTIFIER
0.65 BSC
0.95 15 MAX
0.85 1.10 MAX
0.75
0.80
0.15 6 0.23
0.40 0.55
0.05 0 0.09 0.40
COPLANARITY 0.25
10-07-2009-B
0.10
Rev. F | Page 17 of 18
ADR440/ADR441/ADR443/ADR444/ADR445 Data Sheet
ORDERING GUIDE
Initial Temperature
Output Accuracy Coefficient Package Temperature Package
Model1 Voltage (V) mV % Package (ppm/C) Description Branding Range Option
ADR440ARZ 2.048 3 0.15 10 8-Lead SOIC_N 40C to +125C R-8
ADR440ARZ-REEL7 2.048 3 0.15 10 8-Lead SOIC_N 40C to +125C R-8
ADR440ARMZ 2.048 3 0.15 10 8-Lead MSOP R01 40C to +125C RM-8
ADR440ARMZ-REEL7 2.048 3 0.15 10 8-Lead MSOP R01 40C to +125C RM-8
ADR440BRZ 2.048 1 0.05 3 8-Lead SOIC_N 40C to +125C R-8
ADR440BRZ-REEL7 2.048 1 0.05 3 8-Lead SOIC_N 40C to +125C R-8
ADR441ARZ 2.500 3 0.12 10 8-Lead SOIC_N 40C to +125C R-8
ADR441ARZ-REEL7 2.500 3 0.12 10 8-Lead SOIC_N 40C to +125C R-8
ADR441ARMZ 2.500 3 0.12 10 8-Lead MSOP R02 40C to +125C RM-8
ADR441ARMZ-REEL7 2.500 3 0.12 10 8-Lead MSOP R02 40C to +125C RM-8
ADR441BRZ 2.500 1 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR441BRZ-REEL7 2.500 1 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR443ARZ 3.000 4 0.13 10 8-Lead SOIC_N 40C to +125C R-8
ADR443ARZ-REEL7 3.000 4 0.13 10 8-Lead SOIC_N 40C to +125C R-8
ADR443ARMZ 3.000 4 0.13 10 8-Lead MSOP R03 40C to +125C RM-8
ADR443ARMZ-REEL7 3.000 4 0.13 10 8-Lead MSOP R03 40C to +125C RM-8
ADR443BRZ 3.000 1.2 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR443BRZ-REEL7 3.000 1.2 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR444ARZ 4.096 5 0.13 10 8-Lead SOIC_N 40C to +125C R-8
ADR444ARZ-REEL7 4.096 5 0.13 10 8-Lead SOIC_N 40C to +125C R-8
ADR444ARMZ 4.096 5 0.13 10 8-Lead MSOP R04 40C to +125C RM-8
ADR444ARMZ-REEL7 4.096 5 0.13 10 8-Lead MSOP R04 40C to +125C RM-8
ADR444BRZ 4.096 1.6 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR444BRZ-REEL7 4.096 1.6 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR445ARZ 5.000 6 0.12 10 8-Lead SOIC_N 40C to +125C R-8
ADR445ARZ-REEL7 5.000 6 0.12 10 8-Lead SOIC_N 40C to +125C R-8
ADR445ARMZ 5.000 6 0.12 10 8-Lead MSOP R05 40C to +125C RM-8
ADR445ARMZ-REEL7 5.000 6 0.12 10 8-Lead MSOP R05 40C to +125C RM-8
ADR445BRZ 5.000 2 0.04 3 8-Lead SOIC_N 40C to +125C R-8
ADR445BRZ-REEL7 5.000 2 0.04 3 8-Lead SOIC_N 40C to +125C R-8
1
Z = RoHS Compliant Part.
I2C refers to a communications protocol originally developed by Philips Semiconductors (now NXP Semiconductors).
Rev. F | Page 18 of 18