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www.fairchildsemi.com
AN-3009
FOD31xx
MOSFETIGBTMOSFET
IGBT
(VOH)
MOSFETIGBT0
(VOL)
1. FOD31xx
NMOSFET
(+)
(-)
(+3.3 V+5 V +10 V)
(+20 V
FOD3182+25V FOD3120)
MOSFET/IGBT
LED=0 mALED
1
VO=VG=0 VMOSFET
MOSFET
VDD
LED
LEDIF(peak)<1 A (1 s,
LED 300 pps)10 mA16 mA
250 nsLED
FOD31xx(23 db)
DC40 MHzESR
FOD3182 2
(PWD)40 ns
5.
LED
-40C100C+0.2 ns/C
2.
6
3 LED
PWD+4 ns/mA
6. TA
3. LED PMOSFET
RDS(ON)
4
VCCVEE
5
PNP
7FOD3120
4.
7. TA
CMTI
MOSFETIGBT LEDIF=0 mA
FOD31xx o
o (+)dv/dt
800 V
o (-)dv/dt
240VAC 800V
6kV/s
9 10
3 mA HMOSFET
0.5 pF 9 10
CIO 8
8. CMTI LED
8 9. CMT
(G
9IGBTCMT
ND2) dv/dtH
CIO
LED LED
iCMiCM 10CMT LED
LED CMTdv/dt-
50 fF LEDLED
FOD31xx R2LEDT1CCE
1.5kV15kV/s/ 240 VAC
100 ns3 mApkLED
FOD31xx(CMT) LE
LEDIF=10 mA D
o
o (+)dv/dt dv/dtCMT
o (-)dv/dt 9dv/dtCMT
IGBT
LEDLED
LEDCMT
T2GND1
11. LEDFOD3182
LED
11U1
U1=HIGH,LED
LED
LED
10. dv/dt-
LED
dv/dt LED
10+dv/dtCMT
OFF
LEDdv/dtCMTIGBT
CMTdv/dt
MO
LEDCMT SFETFOD3
1xxMOSFETCMTI
FOD31xxCMTI LEDCMTI
LED
LED
FOD3120MOSFET/IGBT
LED
CMTCIO FOD3120
OFF LEDLED 1
LED
1.
LEDLED
125C
11LED RthE 182 K/W
RthD 141 K/W
LED
RthED 560 K/W
LEDLED TA=25CIC 250 mW
TA=100CIC 210 mW
1)CMTI2)
dv/dtLED ICCL = ICCH 3.8 mA
BJT RDS(ON) 3.5
LED VCC - VEE 30 V
FQA9N90C_F109
CGS 2730 pF
ESR CGS 25
2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
Rev. 1.0.0 10/29/13 4
AN-3009
125C100CFOD3120MOSFET
FOD3120TA
=100C210 mW
13. FOD3120 MOSFET
ICICMOSFET
(1)
12
FOD3120NMOSFET
PIC = PSTATIC + POUT (1) 13FOD3120P
3.5 FQA9N90C_
F109RC
PSTATIC = ICC * VCC 2730 pF25 (ESR)
PSTATIC = 3.8 mA * 30 V (2) RMSMOSFET
PSTATIC = 114 mW FOD3120RDS(ON)
POUTICPIC
ICPSTATIC
100C96
mWPN
RDS(ON)
14. FOD3120
POUT = IO2 * RDS(ON) (4)
14FOD3120
MOSFET
13RGSRDS(ON)CGS
VCC/rGScGSRGSRDS(ON)
t = 2*10-9, 5*10-93*10-6
V = 30 V
c = 2730*10-12
r = 28.5
Tau = r*c
Tau = 7.781*10-8
a = 10*10-6
t
V. (5)
12. FOD3120 MOSFET
i( t ) e
r
0.35
0.3
0.25
P o( p ) 0.2
0.15
0.1
0.05
0 20 40 60 80 100 120 140 160 180 200
f( p )
16. (W)
15. FOD3120 (KHz)
FOD3120MOSFET
16
(t) 96 mWFQA9N90C_F109
V = supply voltage 20 kHz-
r = MOSFETRsFOD3120RDS(ON) RDS(ON)
= MOSFETrCISS RDS(ON)IO
2 171 A1.0
V. t . Rdson
Po exp (6)
r
VCC = 30 V
RMS
(7)RMSp Cgs = 2730 pF
Rds = 1.0
14LED r = r1+RDS(ON)
1/(2 x p) r1 = RGS(cGS-ESR) = 25
0.11
p
2 0.1
1. V. t . Rdson dt (7)
Po( RMS) exp
p r 0.09
0 P o( p )
(8)(7)RDS =
0.08
RDS(ON)
0.07
2
V . Rds . . 4. p
Po( RMS) 1 exp (8) 0.06
60 75 90 105 120 135 150 165 180
2. r
2 p f( p )
17. (W)
CAD
(kHz)
17RDS(ON) 1.0 100CVCC =
t = 3*10-6, 3.5*10-620*10-6 30 VFQA9N90C_F109 MOSFET
V = 30 V 150 kHz
c = 2730*10-12
r1 = 25
RDS = 3.5
R = r1 + RDS
MOSFET(FQA9N90C_F109)
Tau = r*c
IC(8)
FOD3120MOSFETRDS(ON)VCC
MOSFET(ESR)
FOD3120 2.5A
FOD3182 3AMOSFET
FOD3184 3AMOSFET/IGBT
FOD8320 , 2.5A , Optoplanar 5 SOP
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
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1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, or device or system whose failure to perform can be reasonably
(b) support or sustain life, or (c) whose failure to perform expected to cause the failure of the life support device or
when properly used in accordance with instructions for use system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.