Beruflich Dokumente
Kultur Dokumente
SOT-23
FEATURES
PNP Silicon Epitaxial Planar Transistors
for switching and AF amplifier applications.
.037(0.95) .037(0.95)
.007 (0.175)
.005 (0.125)
4/98
BC856 THRU BC859
ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified
DC Current Gain
at VCE = 5 V, IC = 10 A
Current Gain Group A hFE 90
B hFE 150
C hFE 270
at VCE = 5 V, IC = 2 mA
Current Gain Group A hFE 110 180 220
B hFE 200 290 450
C hFE 420 520 800
Thermal Resistance Junction to Substrate RthSB 3201) K/W
Backside
Thermal Resistance Junction to Ambient Air RthJA 4501) K/W
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA VCEsat 90 300 mV
at IC = 100 mA, IB = 5 mA VCEsat 250 650 mV
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA VBEsat 700 mV
at IC = 100 mA, IB = 5 mA VBEsat 900 mV
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA VBE 600 660 750 mV
at VCE = 5 V, IC = 10 mA VBE 800 mV
Collector-Emitter Cutoff Current
at VCE = 80 V BC856 ICES 0.2 15 nA
at VCE = 50 V BC857 ICES 0.2 15 nA
at VCE = 30 V BC858, BC859 ICES 0.2 15 nA
at VCE = 80 V, Tj = 125 C BC856 ICES 4 A
at VCE = 50 V, Tj = 125 C BC857 ICES 4 A
at VCE = 30 V, Tj = 125 C BC858, BC859 ICES 4 A
at VCB = 30 V ICBO 15 nA
at VCB = 30 V, Tj = 150 C ICBO 5 A
.30 (7.5)
.12 (3)
.04 (1)
.08 (2)
.04 (1)
.08 (2)
.59 (15)
.03 (0.8)
.47 (12)
0.2 (5)
.06 (1.5)
Dimensions in inches (millimeters)
.20 (5.1)
nA BC856...BC859
4
10
3
10
-ICBO
2
10
10
mA BC856...BC859 V BC856...BC859
102 -V 0.5
CE = 5 V -IC -IB = 20
Tamb = 25 C
5
4
3
0.4
2
-IC -VCEsat
10
0.3
5
4
3
2
0.2
1
Tamb = 100 C
5 25 C
4 0.1
3
2
-50 C
10-1 0
0 0.5 1V 10-1 2 5 1 2 5 10 2 5 102 mA
-VBE -IC
RATINGS AND CHARACTERISTIC CURVES BC856 THRU BC859