PD - 91339A

IRF520N
HEXFET Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = 100V
l 175C Operating Temperature
l Fast Switching
RDS(on) = 0.20
l Fully Avalanche Rated G

Description ID = 9.7A
Fifth Generation HEXFETs from International Rectifier S
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 9.7
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 6.8 A
IDM Pulsed Drain Current 38
PD @TC = 25C Power Dissipation 48 W
Linear Derating Factor 0.32 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 91 mJ
IAR Avalanche Current 5.7 A
EAR Repetitive Avalanche Energy 4.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 3.1
RCS Case-to-Sink, Flat, Greased Surface 0.50 C/W
RJA Junction-to-Ambient 62

5/13/98
IRF520N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.11 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.20 VGS = 10V, ID = 5.7A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = V GS, ID = 250A
gfs Forward Transconductance 2.7 S VDS = 50V, ID = 5.7A
25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 80V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 25 ID = 5.7A
Qgs Gate-to-Source Charge 4.8 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge 11 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 4.5 VDD = 50V
tr Rise Time 23 ID = 5.7A
ns
td(off) Turn-Off Delay Time 32 RG = 22
tf Fall Time 23 RD = 8.6, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 330 VGS = 0V

Coss Output Capacitance 92 pF VDS = 25V
Crss Reverse Transfer Capacitance 54 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
9.7
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

38
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 5.7A, VGS = 0V

trr Reverse Recovery Time 99 150 ns TJ = 25C, I F = 5.7A
Qrr Reverse RecoveryCharge 390 580 nC di/dt = 100A/s

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25C, L = 4.7mH
RG = 25, IAS = 5.7A. (See Figure 12)
ISD 5.7A, di/dt 240A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 300s; duty cycle 2%.
 IRF520N

100 100 VGS

VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V

I , D rain-to-Source Current (A )
I , D rain-to-Source Current (A )

6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10 10

4 .5V

D
D

4.5 V
20 s P U LS E W ID TH 2 0 s P U L S E W ID TH
TC = 2 5C T C = 17 5C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ourc e V oltage (V ) V DS , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 3.0
I D = 9.5 A
R D S (on) , D ra in-to -S o urc e O n R e s is ta nc e
I D , D ra in -to-S ourc e C urrent (A)

2.5

2.0
TJ = 25 C
(N o rm alize d)

TJ = 17 5 C
10 1.5

1.0

0.5

V DS= 50V
2 0 s P U LS E W ID TH V G S = 1 0V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , G ate-to -Source Volta ge (V ) T J , J unc tion T em perature (C )

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF520N

600 20
V GS = 0V , f = 1MHz I D = 5.7 A
C is s = C g s + C g d , C d s S H O R TE D V D S = 80 V

V G S , G ate-to-S ource V oltage (V )

C rs s = C gd V D S = 50 V
500
C o ss = C ds + C gd 16 V D S = 20 V
C iss
C , Capacitance (pF)

400
12

300 C oss
8
200
C rss
4
100

FO R TE S T C IR C U IT
S E E FIG U R E 1 3
0 A 0 A
1 10 100 0 5 10 15 20 25
V D S , D rain-to -S ource V oltage (V ) Q G , T otal G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 100
O P E R A TIO N IN TH IS A R E A LIM ITE D
B Y R D S (o n)
I SD , Reverse D rain C urrent (A)

10s
I D , Drain C urrent (A )

10

TJ = 17 5C 100 s

10
TJ = 2 5C
1m s

1
10m s

T C = 25 C
T J = 17 5C
V G S = 0V S ing le P u lse
1 A 0.1 A
0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1000
V S D , S ourc e-to-D rain V oltage (V ) V D S , D rain-to-S ource V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF520N
RD
VDS
10.0
VGS
D.U.T.
RG
+
8.0 - VDD
I D , Drain Current (A)

10V
Pulse Width 1 s
6.0
Duty Factor 0.1 %

4.0 Fig 10a. Switching Time Test Circuit

VDS
90%
2.0

0.0
25 50 75 100 125 150 175 10%
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

Fig 9. Maximum Drain Current Vs.
Case Temperature

10
Thermal Response (Z thJC )

D = 0.50

1
0.20

0.10
0.05
0.02 SINGLE PULSE P DM
0.01 (THERMAL RESPONSE)
0.1
t1
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF520N

L
VDS 200
ID

E A S , S ingle P ulse A valanche E nergy (m J)

D.U.T. TO P 2 .3 A
4.0 A
RG + 160 B O TTO M 5 .7A
V
- DD

10 V IAS
120
tp
0.01

Fig 12a. Unclamped Inductive Test Circuit 80

V(BR)DSS
40
tp
VDD
V D D = 25 V
0 A
25 50 75 100 125 150 175
VDS S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy

IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG 12V .2F
.3F
10 V +
QGS QGD V
D.U.T. - DS

VGS
VG
3mA

Charge IG ID
Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF520N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRF520N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
10 .54 (.4 15) 3 .7 8 (.149 ) -B -
2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 -A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
E X A M P L E : TH IS IS A N IR F 1 0 1 0
W ITH A S S E M B L Y A
L O T C O D E 9 B 1M IN TE R N A T IO N A L PART NU MBER
R E C TIFIE R
IR F 1 0 10
LOGO 9246
9B 1M D A TE C O D E
ASSEMBLY
(Y Y W W )
L OT C O D E
YY = YEAR
W W = W EEK

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/