SPW32N50C3

Cool MOS Power Transistor VDS @ Tjmax 560 V

Feature RDS(on) 0.11
New revolutionary high voltage technology ID 32 A
Ultra low gate charge
Periodic avalanche rated PG-TO247

Extreme dv/dt rated

Ultra low effective capacitances
Improved transconductance

Type Package Ordering Code Marking

SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 C 32
TC = 100 C 20
Pulsed drain current, tp limited by Tjmax I D puls 96
Avalanche energy, single pulse EAS 1100 mJ
I D = 10 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 1
I D = 20 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 20 A
Gate source voltage VGS 20 V
Gate source voltage AC (f >1Hz) VGS 30
Power dissipation, T C = 25C Ptot 284 W
Operating and storage temperature T j , T stg -55... +150 C
Reverse diode dv/dt 4)
dv/dt 15 V/ns

Rev. 2.5 Page 1 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A
 SPW32N50C3

Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 400 V, ID = 32 A, Tj = 125 C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.44 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, wavesoldering Tsold - - 260 C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA 500 - - V
Drain-Source avalanche V(BR)DS V GS=0V, ID=20A - 600 -
breakdown voltage
Gate threshold voltage VGS(th) ID=1800, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current I DSS V DS=500V, VGS=0V, A
Tj=25C, - 0.5 25
Tj=150C - - 250
Gate-source leakage current I GSS V GS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) V GS=10V, ID=20A,
Tj=25C - 0.09 0.11
Tj=150C - 0.27 -
Gate input resistance RG f=1MHz, open Drain - 0.8 -

Rev. 2.5 Page 2 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

Electrical Characteristics , at Tj = 25 C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS2*I D*RDS(on)max, - 30 - S
ID=20A

Input capacitance Ciss V GS=0V, V DS=25V, - 4200 - pF

Output capacitance Coss f=1MHz - 1700 -
Reverse transfer capacitance Crss - 90 -
Effective output capacitance, 2) Co(er) V GS=0V, - 181 - pF
energy related V DS=0V to 400V

Effective output capacitance, 3) Co(tr) - 350 -

time related
Turn-on delay time td(on) V DD=380V, V GS=0/10V, - 20 - ns
Rise time tr ID=32A, RG=2.7 - 30 -
Turn-off delay time td(off) - 100 -
Fall time tf - 10 -

Gate Charge Characteristics

Gate to source charge Qgs VDD=380V, ID=32A - 15 - nC
Gate to drain charge Qgd - 90 -
Gate charge total Qg VDD=380V, ID=32A, - 170 -
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=380V, ID=32A - 5 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.
4I <=I , di/dt<=200A/us, V
SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.

Rev. 2.5 Page 3 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

Electrical Characteristics, at Tj = 25 C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25C - - 32 A
forward current
Inverse diode direct current, ISM - - 96
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=380V, IF=IS , - 500 - ns
Reverse recovery charge Qrr diF/dt=100A/s - 15 - C
Peak reverse recovery current Irrm - 60 - A
Peak rate of fall of reverse dirr /dt - 1000 - A/s
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.004367 K/W Cth1 0.0006644 Ws/K
R th2 0.008742 Cth2 0.002479
R th3 0.017 Cth3 0.00336
R th4 0.081 Cth4 0.009048
R th5 0.103 Cth5 0.017
R th6 0.049 Cth6 0.114

Tj R th1 R th,n E xternal H eatsink

T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 2.5 Page 4 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

1 Power dissipation 2 Safe operating area

Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25C
320
SPW32N50C3 10 2

A
W

240 10 1
Ptot

ID
200

160 10 0
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
120
tp = 1 ms
DC
80 10 -1

40

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25C
parameter: D = tp/T parameter: tp = 10 s, VGS
0
10 140

K/W Vgs = 20V

A

10 -1
Vgs = 7V
100
ZthJC

ID

Vgs = 6V
80
10 -2

D = 0.5 60
Vgs = 5.5V
D = 0.2
D = 0.1
D = 0.05 40
10 -3 D = 0.02 Vgs = 5V
D = 0.01
single pulse 20
Vgs = 4.5V
-4
10 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 V 25
tp VDS

Rev. 2.5 Page 5 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=150C RDS(on)=f(ID)
parameter: tp = 10 s, VGS parameter: Tj=150C, V GS
80 2

Vgs = 20V

Vgs = 6V
1.6 Vgs = 5.5V
A Vgs = 4V
Vgs = 4.5VVgs = 5V

RDS(on)
Vgs = 5.5V 1.4
ID

1.2

40 Vgs = 5V 1

0.8

0.6
Vgs = 4.5V
20
0.4

Vgs = 4V Vgs = 20
0.2

0 0
0 5 10 15 V 25 0 10 20 30 40 50 60 ID 80
VDS ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS 2 x ID x RDS(on)max
parameter : ID = 20 A, VGS = 10 V parameter: tp = 10 s
SPW32N50C3
0.65 160

A
0.55

0.5
120 Tj = 25C
RDS(on)

0.45

100
ID

0.4

0.35 Tj =150C
80
0.3

0.25 60
0.2
40
0.15 98%

0.1 typ
20
0.05

0 0
-60 -20 20 60 100 C 180 0 1 2 3 4 5 6 7 8 V 10
Tj VGS

Rev. 2.5 Page 6 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

9 Typ. gate charge 10 Forward characteristics of body diode

VGS = f (QGate) IF = f (VSD)
parameter: ID = 32 A pulsed parameter: Tj , tp = 10 s
16
SPW32N50C3
10 2 SPW32N50C3

V
A

12

10 1
VGS

0.2 VDS max

10

IF
0.8 VDS max

6
10 0
Tj = 25 C typ
4
Tj = 150 C typ
Tj = 25 C (98%)
2 Tj = 150 C (98%)

0 10 -1
0 40 80 120 160 200 nC 260 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy

IAR = f (tAR) EAS = f (Tj)
par.: Tj 150 C par.: ID = 10 A, VDD = 50 V
20 1.2

mJ
A
EAS

0.8
IAR

Tj(START)=25C

10 0.6

0.4

5 Tj(START)=125C

0.2

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 s 10 20 40 60 80 100 120 C 160
tAR Tj

Rev. 2.5 Page 7 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

13 Drain-source breakdown voltage 14 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=1mJ
SPW32N50C3
600 1000
V

W
570
V(BR)DSS

560

PAR
550
540 600

530
520
510 400

500
490
480 200
470
460
450 0 4 5 6
-60 -20 20 60 100 C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy

C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5 22
pF J

10 4 18
Ciss
16
Eoss

14
10 3
C

12
Coss
10
2
10
8

Crss 6
1
10
4

2
0
10 0
0 100 200 300 V 500 0 100 200 300 V 500
VDS VDS

Rev. 2.5 Page 8 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 SPW32N50C3

Definition of diodes switching characteristics

Rev. 2.5 Page 9 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 63:31&

3G72

Rev. 2.5 PDJH 80211

Please note the new package dimensions arccording to PCN 2009-134-A
 63:31&

Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.

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Due to technical requirements, components may contain dangerous substances. For
information on the types in question, please contact the nearest Infineon Technologies
Office. Infineon Technologies components may be used in life-support devices or
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Rev. 2.5 Page 11 2008-02-11

Please note the new package dimensions arccording to PCN 2009-134-A

 Data sheet erratum
PCN 2009-134-A

New package outlines TO-247

1 New package outlines TO-247

Assembly capacity extension for CoolMOSTM technology products assembled in lead-free package
PG-TO247-3 at subcontractor ASE (Weihai) Inc., China (Changes are marked in blue.)

Figure 1 Outlines TO-247, dimensions in mm/inches

Final Data Sheet Erratum Rev. 2.0, 2010-02-01