TCLT100.

Series
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Optocoupler, Phototransistor Output,
SOP-4L, Long Mini-Flat Package
C E FEATURES
4 3 SMD low profile 4 lead package
VIORM = 1050 V
CTR flexibility available see order information
Special construction
1 2 Extra low coupling capacitance
17295-5
A C DC input with transistor output
Creepage distance > 8 mm
Material categorization:
for definitions of compliance please see
DESCRIPTION www.vishay.com/doc?99912
The TCLT100. series consists of a phototransistor optically
coupled to a gallium arsenide infrared-emitting diode in a AGENCY APPROVALS
4-lead SOP4L package. UL1577, file no. E76222
CSA (cUL) 22.2 bulletin 5A recognized file no. E-76222
APPLICATIONS
BSI: BS EN 41003, BS EN 60065 (BS 415), BS EN 60950
Switchmode power supplies (BS 7002), certificate number 7081 and 7402
Computer peripheral interface DIN EN 60747-5-5 (VDE 0884)
Microprocessor system interface FIMKO: EN 60950
CQC
Note
See the safety standard approval list Agency Table for more
detailed information.

ORDERING INFORMATION

SOP-4L
T C L T 1 0 0 #

10.2 mm
PART NUMBER

AGENCY CTR (%)

CERTIFIED/PACKAGE 5 mA 10 mA 5 mA
UL, cUL, VDE, BSI, FIMKO 50 to 600 63 to 125 100 to 200 160 to 320 50 to 150 100 to 300 80 to 160 130 to 260 200 to 400
SOP-4L TCLT1000 TCLT1002 TCLT1003 TCLT1004 TCLT1005 TCLT1006 TCLT1007 TCLT1008 TCLT1009
Note
Available only on tape and reel.

Rev. 2.9, 01-Dec-15 1 Document Number: 83515

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ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage VR 6 V
Forward current IF 60 mA
Forward surge current tp 10 s IFSM 1.5 A
Power dissipation Pdiss 100 mW
Junction temperature Tj 125 C
OUTPUT
Collector emitter voltage VCEO 70 V
Emitter collector voltage VECO 7 V
Collector current IC 50 mA
Collector peak current tp/T = 0.5, tp 10 ms ICM 100 mA
Power dissipation Pdiss 150 mW
Junction temperature Tj 125 C
COUPLER
Total power dissipation Ptot 250 mW
Operating ambient temperature range Tamb -55 to +100 C
Storage temperature range Tstg -55 to +125 C
Soldering temperature Tsld 260 C
Note
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.

ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 50 mA VF - 1.25 1.6 V
Junction capacitance VR = 0 V, f = 1 MHz Cj - 50 - pF
OUTPUT
Collector emitter voltage IC = 1 mA VCEO 70 - - V
Emitter collector voltage IE = 100 A VECO 7 - - V
Collector emitter cut-off current VCE = 20 V, IF = 0 A ICEO - 10 100 nA
COUPLER
Collector emitter saturation voltage IF = 10 mA, IC = 1 mA VCEsat - - 0.3 V
VCE = 5 V, IF = 10 mA,
Cut-off frequency fc - 110 - kHz
RL = 100
Coupling capacitance f = 1 MHz Ck - 0.3 - pF
Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.

Rev. 2.9, 01-Dec-15 2 Document Number: 83515

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CURRENT TRANSFER RATIO (Tamb = 25 C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
VCE = 5 V, IF = 5 mA TCLT1000 CTR 50 - 600 %
TCLT1002 CTR 63 - 125 %
VCE = 5 V, IF = 10 mA TCLT1003 CTR 100 - 200 %
TCLT1004 CTR 160 - 320 %
TCLT1002 CTR 22 45 - %
VCE = 5 V, IF = 1 mA TCLT1003 CTR 34 70 - %
IC/IF
TCLT1004 CTR 56 100 - %
TCLT1005 CTR 50 - 150 %
TCLT1006 CTR 100 - 300 %
VCE = 5 V, IF = 5 mA TCLT1007 CTR 80 - 160 %
TCLT1008 CTR 130 - 260 %
TCLT1009 CTR 200 - 400 %

SAFETY AND INSULATION RATINGS

PARAMETER CONDITION SYMBOL VALUE UNIT
Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 2 kV
Partial discharge test voltage - tTr = 60 s, ttest = 10 s, VIOTM 8 kVpeak
lot test (sample test) (see figure 2) Vpd 1.68 kVpeak
Isolation test voltage (RMS) VISO 5000 VRMS
VIO = 500 V RIO 1012
VIO = 500 V, Tamb = 100 C RIO 1011
Insulation resistance
VIO = 500 V, Tamb = 150 C
RIO 109
(construction test only)
Forward current Isi 130 mA
Power dissipation Pso 265 mW
Rated impulse voltage VIOTM 8 kV
Safety temperature Tsi 150 C
Comparative tracking index CTI 175
Clearance distance 8.0 mm
Creepage distance 8.0 mm
Insulation distance (internal) 0.40 mm
Note
According to DIN EN 60747-5-2 (VDE 0884) (see figure 2). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.

300 VIOTM
t1, t2 = 1 s to 10 s
Phototransistor
250 t3 , t4 =1s
Pso (mW)
ttest = 10 s
200 tstres = 12 s
Vpd
150
VIOWM
VIORM
100

IR-diode
50 Isi (mA)
0
0 t3 ttest t4
0 25 50 75 100 125 150
t1 tTr = 60 s t2 t stres
13930
94 9182-2 Tsi - Safety Temperature (C)
t

Fig. 1 - Derating Diagram Fig. 2 - Test Pulse Diagram for Sample Test according to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5

Rev. 2.9, 01-Dec-15 3 Document Number: 83515

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SWITCHING CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
VS = 5 V, IC = 2 mA, RL = 100 ,
Delay time td - 3 - s
(see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 ,
Rise time tr - 3 - s
(see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 ,
Fall time tf - 4.7 - s
(see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 ,
Storage time ts - 0.3 - s
(see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 ,
Turn-on time ton - 6 - s
(see figure 3)
VS = 5 V, IC = 2 mA, RL = 100 ,
Turn-off time toff - 5 - s
(see figure 3)
VS = 5 V, IF = 10 mA, RL = 1 k,
Turn-on time ton - 9 - s
(see figure 4)
VS = 5 V, IF = 10 mA, RL = 1 k,
Turn-off time toff - 10 - s
(see figure 4)

IF

IF IF +5V 0
tp t
0 IC
I C = 2 mA; adjusted through
100 %
input amplitude
90 %
R G = 50
tp
= 0.01
T
t p = 50 s 10 %
Channel I
Oscilloscope 0
tr
R L = 1 M t
Channel II td ts tf
C L = 20 pF
t on t off
50 100
tp Pulse duration ts Storage time
td Delay time tf Fall time
95 10804 tr Rise time t off (= ts + tf) Turn-off time
t on (= td + tr) Turn-on time 96 11698

Fig. 3 - Test Circuit, Non-Saturated Operation Fig. 5 - Switching Times

IF I F = 10 mA +5V
0
IC

R G = 50
tp
= 0.01
T
t p = 50 s
Channel I
Oscilloscope
R L 1 M
Channel II
C L 20 pF
50 1 k

95 10843

Fig. 4 - Test Circuit, Saturated Operation

Rev. 2.9, 01-Dec-15 4 Document Number: 83515

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TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

1.2
Ptot - Total Power Dissipation (mW)

300

NCTR - Normalized CTR (sat)

Coupled device
250 1.0

200 0.8
Phototransistor
150 0.6

IR-diode
100 0.4

50 0.2 Normalized to CTR value:

IF = 5 mA, VCE = 5 V, Tamb = 25 C
0 0
0 40 80 120 -60 -40 -20 0 20 40 60 80 100 120
96 11700 Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C)

Fig. 6 - Total Power Dissipation vs. Ambient Temperature Fig. 9 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature

100 1.4
Tamb = 0 C
Tamb = 110 C

NCTR - Normalized CTR (NS)

1.2
IF - Forward Current (mA)

Tamb = 75 C Tamb = -55 C

Tamb = 25 C
1.0 Tamb = 25 C
10 Tamb = 0 C
Tamb = - 55 C
0.8

0.6 Tamb = 75 C
1
0.4 Tamb = 100 C

0.2 Normalized to:

IF = 5 mA, VCE = 5 V
0.1 0
0.6 0.8 1.0 1.2 1.4 1.6
0.1 1 10 100
VF - Forward Voltage (V) IF - Forward Current (mA)

Fig. 7 - Forward Current vs. Forward Voltage Fig. 10 - Normalized Current Transfer Ratio (non-saturated) vs.
Forward Current
NCTR - Normalized CTR (non-saturated)

1.2 1.2
VCE = 0.4 V Tamb = 0 C
IF = 5 mA
NCTR - Normalized CTR (sat)

Normalized to: Tamb = -55

- C
1.0 1.0
IF = 5 mA,
VCE = 5 V,
0.8 0.8 Tamb = 25 C

0.6 0.6

0.4 0.4
Tamb = 25 C
0.2 0.2
Normalized to CTR value: Tamb = 75 C
IF = 5 mA, VCE = 5 V, Tamb = 25 C Tamb = 100 C
0 0
-60 -40 -20 0 20 40 60 80 100 120 0.1 1 10 100
Tamb - Ambient Temperature (C) IF - Forward Current (mA)

Fig. 8 - Normalized Current Transfer Ratio (non-saturated) vs. Fig. 11 - Normalized Current Transfer Ratio (saturated) vs.
Ambient Temperature Forward Current

Rev. 2.9, 01-Dec-15 5 Document Number: 83515

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10 000 1.0
IF = 0 mA
ICE0 - Leakage Current (nA)

1000 20 % used

VCEsat - Collector Emitter

VCE = 40 V

Saturation Voltage (V)

0.8
100 CTR = 50 %
used
10 0.6
VCE = 24 V
1
0.4
0.1
VCE = 12 V
0.2
0.01
10 % used
0.001 0
-60 -40 -20 0 20 40 60 80 100 120 1 10 100

Tamb - Ambient Temperature (C) 95 11028 IC - Collector Current (mA)

Fig. 12 - Collector Dark Current vs. Ambient Temperature Fig. 15 - Collector Emitter Saturation Voltage vs. Collector Current

100 1000

CTR - Current Transfer Ratio (%)

VCE = 5 V
IC - Collector Current (mA)

VCE = 5 V
10
100

10
0.1

0.01 1
0.1 1 10 100 0.1 1 10 100
95 11027 IF - Forward Current (mA) 95 11029 IF - Forward Current (mA)

Fig. 13 - Collector Current vs. Forward Current Fig. 16 - Current Transfer Ratio vs. Forward Current

100 10
ton/toff - Turn-On/Turn-Off Time (s)

20 mA Non-saturated
IC - Collector Current (mA)

operation
IF = 50 mA 8 VS = 5 V
ton RL = 100
10 10 mA
6
5 mA
toff

4
1 2 mA

1 mA 2

0.1 0
0.1 1 10 100 0 2 4 6 8
95 10985 VCE - Collector Emitter Voltage (V) 95 11030 IC - Collector Current (mA)

Fig. 14 - Collector Current vs. Collector Emitter Voltage Fig. 17 - Turn-on/off Time vs. Collector Current

Rev. 2.9, 01-Dec-15 6 Document Number: 83515

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50
ton/toff - Turn-On/Turn-Off Time (s)

Saturated operation
40 VS = 5 V
RL = 1 k

30
toff
20

10

ton
0
0 5 10 15 20
95 11031 IF - Forward Current (mA)

Fig. 18 - Turn-on/off Time vs. Forward Current

PACKAGE DIMENSIONS (in millimeters)

+ 0.30
4.10 max. 10.20 - 0.40
2.30 max.

3.80 7.50 0.20

- 0.05
+ 0.10
0.20
2.00

0.10

Seating plane
0.45 0.1
+ 0.30
0.70 - 0.40

2.54 nom.

4 3
Possible footprint
2.54

8.20
0.90

10.80

technical drawings
1 2 according to DIN
22533 Pin no. 1 identification specifications

PACKAGE MARKING (example)

TCLT1003
V YWW 68

Rev. 2.9, 01-Dec-15 7 Document Number: 83515

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TAPE AND REEL DIMENSIONS (in millimeters)

1.55
2.7
ESD sticker

1.75
2 4 0.3

Tape slot

7.5
in core

16
10.6
330
(13")

5
4.25 8

1.6
2.3

Regular, special Direction of pulling out

or bar code label technical drawings
according to DIN
specification 22662
17999

Fig. 19 - Reel Dimensions (3000 units per reel) Fig. 20 - Tape Dimensions

SOLDER PROFILE HANDLING AND STORAGE CONDITIONS

300 ESD level: HBM class 2
max. 260 C Floor life: unlimited
250 255 C
245 C
240 C Conditions: Tamb < 30 C, RH < 85 %
217 C
Temperature (C)

200 Moisture sensitivity level 1, according to J-STD-020

max. 30 s
150
max. 120 s max. 100 s
100
max. ramp down 6 C/s

50 max. ramp up 3 C/s

0
0 50 100 150 200 250 300

19841 Time (s)

Fig. 21 - Lead (Pb)-free Reflow Solder Profile

according to J-STD-020

Rev. 2.9, 01-Dec-15 8 Document Number: 83515

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Revision: 08-Feb-17 1 Document Number: 91000