AO4484

40V N-Channel MOSFET

General Description Product Summary

The AO4484 uses advanced trench technology to VDS (V) = 40V

provide excellent RDS(ON) with low gate charge. This is ID = 10A (VGS = 10V)
an all purpose device that is suitable for use in a wide RDS(ON) < 10m (VGS = 10V)
range of power conversion applications. RDS(ON) < 12m (VGS = 4.5V)

100% UIS Tested

100% Rg Tested

SOIC-8

Top View Bottom View D

D
D
D
D

G G
S
S
S
S

Absolute Maximum Ratings TJ=25C unless otherwise noted

Parameter Symbol 10 Sec Steady State Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS 20 V
Continuous Drain TA=25C 13.5 10
Current A TA=70C ID 10.8 8
B A
Pulsed Drain Current IDM 120
Avalanche Current G IAR 23
G
Repetitive avalanche energy L=0.3mH EAR 79 mJ
TA=25C 3.1 1.7
Power Dissipation A PD W
TA=70C 2.0 1.1
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 31 40 C/W
RJA
Maximum Junction-to-Ambient A Steady State 59 75 C/W
Maximum Junction-to-Lead C Steady State RJL 16 24 C/W

Alpha & Omega Semiconductor, Ltd. www.aosmd.com

AO4484

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID = 250A, VGS = 0V 40 V
VDS = 40V, VGS = 0V 1
IDSS Zero Gate Voltage Drain Current A
TJ = 55C 5
IGSS Gate-Body leakage current VDS = 0V, VGS = 20V 100 nA
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250A 1.7 2.2 3 V
ID(ON) On state drain current VGS = 10V, VDS = 5V 120 A
VGS = 10V, ID = 10A 8.2 10
RDS(ON) Static Drain-Source On-Resistance TJ=125C 12.5 16 m
VGS = 4.5V, ID = 8A 10 12.5
gFS Forward Transconductance VDS = 5V, ID = 10A 75 S
VSD Diode Forward Voltage IS = 1A,VGS = 0V 0.72 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1500 1950 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 215 pF
Crss Reverse Transfer Capacitance 135 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2 3.5 5
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 27.2 37 nC
Qg (4.5V) Total Gate Charge 13.6 18 nC
VGS=10V, VDS=20V, ID=10A
Qgs Gate Source Charge 4.5 nC
Qgd Gate Drain Charge 6.4 nC
tD(on) Turn-On DelayTime 6.4 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL= 2, 17.2 ns
tD(off) Turn-Off DelayTime RGEN=3 29.6 ns
tf Turn-Off Fall Time 16.8 ns
trr Body Diode Reverse Recovery Time IF=10A, dI/dt=100A/s 30 40 ns
Qrr Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/s 19 nC
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating. 0
F. The current rating is based on the t 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
Rev1: Nov. 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha Omega Semiconductor, Ltd. www.aosmd.com

AO4484

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

120 100
10V VDS= 5V
4.5V
100 80

80
60
4V
ID (A)

ID(A)
60
40
40
3.5V
125C
20
20
VGS= 3V 25C

0 0
0 1 2 3 4 5 2 2.5 3 3.5 4 4.5
VDS (Volts) VGS(Volts)
Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

16 1.8

VGS= 10V
Normalized On-Resistance

14
1.6 ID= 10A
12
RDS(ON) (m )

VGS= 4.5V 1.4 VGS= 4.5V

10 ID=8A
1.2
8
VGS= 10V

6 1.0

4 0.8
0 5 10 IF=-6.5A,
15 dI/dt=100A/s
20 0 25 50 75 100 125 150 175
ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction
Gate Voltage Temperature

25 1E+02
ID= 10A
1E+01
20
1E+00
RDS(ON) (m )

1E-01
IS (A)

15 125C
125C
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
1E-03 AOS DOES NOT ASSUME ANY LIABILITY ARISING
10 25C 25CPRODUCT DESIGN,
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 1E-04

5 1E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

Alpha Omega Semiconductor, Ltd. www.aosmd.com

AO4484

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS= 20V
ID= 10A
8 2000
Ciss

Capacitance (pF)
VGS (Volts)

6 1500

4 1000

2 500 Coss

Crss
0 0
0 5 10 15 20 25 30 0 10 20 30 40
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000 1000
TJ(Max)=150C
TA=25C
100
10s
100
Power (W)
ID (Amps)

10 100s

1 RDS(ON) 1m
limited 10ms 10
100ms
0.1
TJ(Max)=150C 10s
TA=25C DC
0.01 1
0.1 1
IF=-6.5A,
10
dI/dt=100A/s
100 0.0001 0.01 1 100
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note E) to-Ambient (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

RJA=75C/W
Thermal Resistance

0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
PD
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH
0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT Ton
SingleNOTICE.
Pulse T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)

Alpha Omega Semiconductor, Ltd. www.aosmd.com