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Constant-Field Scaling
Let MOSFET current before scaling be given by
Ids = (1/2) n Cox (W/L) (VGS Vt )2
After constant field scaling, the drain current
becomes,
Ids = (1/2) n SCox ((W/S)/(L/S)) ((VGS /S) (Vt /S))2
Ids = Ids /S
Hence, the drain current decreases by scaling
factor S.
Also, before scaling, delay is given by
= CV/I
Where C is the load capacitance, V is supply voltage,
and I is the charging current. We know that in constant
field scaling, C,V and I decrease by a factor of S;
hence, the delay after scaling is given by
= = /S
Constant-Voltage Scaling
After constant voltage scaling, the drain current
becomes,
Ids = (1/2) n SCox ((W/S)/(L/S)) (VGS Vt )2
Ids = S Ids
Gate capacitance CGS
CGS = Cox W L = (ox/Tox)WL
CGS = Cox (W/S) (L/S) = (ox/(Tox)/S) (W/S) (L/S) = CGS /S
Fig 1
Gate tunneling currents Short-channel MOSFETs
require very thin gate oxide to control the various
short-channel effects, as mentioned earlier. For
example, MOSFETs with a channel length of 65 nm
require gate oxide thickness of about 1.2 nm. Such a
thin gate oxide consists of only four to five atomic
layers and electrons can easily tunnel through the thin
oxide. The direct tunneling of electrons across thin
gate oxide eventually leads to gate leakage current,
which also increases the power dissipation. Hence,
tunneling currents limit the further scaling of oxide
thickness. To overcome this problem, the
conventional silicon dioxide is replaced with high
dielectric constant (high-K) materials such as silicon
nitride, hafnium oxide, etc. The high-K material
allows higher physical thickness than the
conventional silicon dioxide thickness for the same
capacitance. Therefore, high-K materials decrease gate
tunneling currents and allow further scaling of MOS
transistors.
Hot carrier effect The reduction of MOSFET
dimensions to achieve higher integration density and
performance increases lateral and vertical electric
fields in the device. The increased electric field
increases the velocity of electrons and holes and,
hence, their kinetic energy. Electrons and holes with
high kinetic energy are known as hot electrons and
hot holes, respectively. Due to high vertical electric
field, hot electrons and holes strike or penetrate into
the oxide and get trapped at the Si-Si0 2 interface as
well as in the oxide. These trapped carriers modulate
the threshold voltage of MOSFETs and degrade the
reliability.
3 Q. Compare MOS & BJT
A.
4 Q. Draw the MOSFET constant current source circuit and explain it.
A.
Since Io = IC
Figure shows the BJT current source. Here the reference current s
IREF = (VCC VBE)/R
Where VBE is base emitter value corresponding to the desired value
of Io,
Io = IREF /(1+ 2/) (1 + (Vo - VBE)/ VA2)
& fH = H /2
This relationship can be extended to any number of poles and
zeros as
Open circuit time constants
Another way of finding 3bd frequency fH is by finding the open
circuit time constants.
The amplifier gain can be represented as
where
If the zeros are not dominant and if one of the poles, say P1, is
dominant, then we may write,
Proof :
In the circuit of Fig.(a), from node-1 impedance Z
carries the current I. Therefore, to keep this current
unchanged in the equivalent circuit, we must choose
the value of Z1 so that it draws an equal current.
Ix = - gm Ix R [(- Ix R + Vx)/RL]
Ix RL + gm Ix R RL+ Ix R = Vx