Tutorial 2: Analysis of Diode Characteristics and DC Circuits

1. For the circuits shown in Figure 2, Find VO1 and VO2

Si Si
Vo1 Vo2 Vo1 Vo2
+10V +12V
1 .2 k 4 .7 k

4 .7 k G e

-2 V
Figure 2

(a) Circuit 1

Taking Kirchoffs Voltage Law (KVL), and 0.7V drop across silicon diode,

10 ( I 1.2k ) 0.7 ( I 4.7 k ) 2 0

Rearrange equation to get current,

( I 1.2k ) ( I 4.7 k ) 10 0.7 2

I (1.2k 4.7 k ) 11.3
11.3
I
5.9k
1.92mA

Vo1 is the drop across the 1.2k resistor,

Vo1 10 ( I 1.2k )
10 (1.92 1.2)
7.7V

Vo2 is another drop across the silicon diode,

Vo 2 7.7 0.7
7V
(b) Circuit 2

The Faculty of Electrical Engineering, UTM March 2015

 Taking Kirchoffs Voltage Law (KVL), 0.7V drop and 0.3V drop across silicon and
germanium diodes respectively,

12 0.7 ( I 4.7 k ) 0.3 0

Rearrange equation to get current,

I 4.7 k 12 0.7 0.3

11
I
4.7 k
2.34mA

Vo1 is the drop across silicon diode,

Vo1 12 0.7
11.3V

Vo2 is the another drop across the 4.7k resistor,

Vo 2 11.3 ( I 4.7 k )
11.3 (2.34 4.7)
0.3V

The Faculty of Electrical Engineering, UTM March 2015