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FGY75N60SMD 600 V, 75 A Field Stop IGBT

June 2014

FGY75N60SMD
600 V, 75 A Field Stop IGBT
Features General Description
High Current Capability Using novel field stop IGBT technology, Fairchilds new series
Low Saturation Voltage: VCE(sat) = 1.9 V @ IC = 75 A of field stop 2nd generation IGBTs offer the optimum perfor-
mance for solar inverter, UPS, welder and PFC applications
High Input Impedance
where low conduction and switching losses are essential.
Fast Switching : EOFF = 10 uJ/A
RoHS Compliant Application
Solar Inverter, UPS, Welder, SMPS, PFC

G E
C Power TO247
E (TO-247D03)

Absolute Maximum Ratings


Symbol Description Ratings Unit
VCES Collector to Emitter Voltage 600 V
Gate to Emitter Voltage 20 V
VGES
Transient Gate to Emitter Voltage 30 V
Collector Current @ TC = 25oC 150 A
IC
o
Collector Current @ TC = 100 C 75 A
ICM (1) Pulsed Collector Current @ TC = 25oC 225 A

Diode Forward Current @ TC = 25oC 75 A


IF
o
Diode Forward Current @ TC = 100 C 50 A
IFM (1) Pulsed Diode Maximum Forward Current 225 A
o
Maximum Power Dissipation @ TC = 25 C 750 W
PD
Maximum Power Dissipation @ TC = 100oC 375 W
oC
TJ Operating Junction Temperature -55 to +175
o
Tstg Storage Temperature Range -55 to +175 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8 from case for 5 seconds

Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature.

2010 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Thermal Characteristics
Symbol Parameter Typ. Max. Unit
o
RJC(IGBT) Thermal Resistance, Junction to Case - 0.2 C/W
oC/W
RJC(Diode) Thermal Resistance, Junction to Case - 0.48
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

Package Marking and Ordering Information


Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FGY75N60SMD FGY75N60SMD TO-247D03 Tube N/A N/A 30

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 600 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.67 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 3.5 5.0 6.5 V
IC = 75 A, VGE = 15 V - 1.90 2.50 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 75 A, VGE = 15 V,
TC = 175oC - 2.14 - V

Dynamic Characteristics
Cies Input Capacitance - 3800 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 390 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 105 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 24 32 ns
tr Rise Time - 56 73 ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 75 A, - 136 177 ns
tf Fall Time RG = 3 , VGE = 15 V, - 22 29 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 2.3 2.99 mJ
Eoff Turn-Off Switching Loss - 0.77 1.00 mJ
Ets Total Switching Loss - 3.07 3.99 mJ
td(on) Turn-On Delay Time - 23 - ns
tr Rise Time - 53 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 75 A, - 146 - ns
tf Fall Time RG = 3 , VGE = 15 V, - 15 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 3.60 - mJ
Eoff Turn-Off Switching Loss - 1.11 - mJ
Ets Total Switching Loss - 4.71 - mJ

2010 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Qg Total Gate Charge - 248 370 nC


Qge Gate to Emitter Charge VCE = 400 V, IC = 75 A, - 28 42 nC
VGE = 15 V
Qgc Gate to Collector Charge - 129 195 nC

Electrical Characteristics of the Diode TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units


o
TC = 25 C - 1.75 2.1
VFM Diode Forward Voltage IF = 50 A V
TC = 175oC - 1.35 -
Erec Reverse Recovery Energy TC = 175oC - 0.14 - mJ
TC = 25oC - 41 55
trr Diode Reverse Recovery Time IF = 50 A, diF/dt = 200 A/s ns
TC = 175oC - 126 -
VR=400 V
TC = 25oC - 81 115
Qrr Diode Reverse Recovery Charge nC
o
TC = 175 C - 736 -

2010 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics


225 225
o o
TC = 25 C 20V TC = 175 C 20V 15V
15V
12V 12V
180 180
Collector Current, IC [A]

Collector Current, IC [A]


10V
10V
135 135

90 90

VGE = 8V
VGE = 8V
45 45

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics


Characteristics
225 225
Common Emitter Common Emitter
VGE = 15V VCE = 20V
o
180 TC = 25oC 180 TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]

o o
TC = 175 C TC = 175 C

135 135

90 90

45 45

0 0
0 1 2 3 4 5 2 4 6 8 10 12
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
3.5 20
Common Emitter Common Emitter
VGE = 15V o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
Collector-Emitter Voltage, VCE [V]

3.0 16
150A

2.5 12

75A
2.0 8

IC = 40A
150A
1.5 4
75A

IC = 40A
1.0 0
25 50 75 100 125 150 175 4 8 12 16 20
o Gate-Emitter Voltage, VGE [V]
Collector-EmitterCase Temperature, TC [ C]

2010 Fairchild Semiconductor Corporation 4 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
Collector-Emitter Voltage, VCE [V]

TC = 25 C TC = 175 C

Collector-Emitter Voltage, VCE [V]


16 16

12 12

8 8

150A 150A
4 4
75A 75A
IC = 40A IC = 40A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics


8000 15
Common Emitter Common Emitter
o
VGE = 0V, f = 1MHz TC = 25 C, ICE=75A
300V
Gate-Emitter Voltage, VGE [V]

o 12
TC = 25 C
6000 Cies VCC = 200V
Capacitance [pF]

400V
9

4000
6

Coes
2000
3
Cres

0 0
1 10 30 0 50 100 150 200 250
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. Turn-off Characteristics vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Gate Resistance
5500 200
Common Emitter
VCC = 400V, VGE = 15V
IC = 75A
o
TC = 25 C 100 tr
1000
o
Switching Time [ns]

TC = 175 C
Switching Time [ns]

td(off)

100 td(on) Common Emitter


tf VCC = 400V, VGE = 15V
IC = 75A
o
TC = 25 C
o
TC = 175 C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [ ] Gate Resistance, RG [ ]

2010 Fairchild Semiconductor Corporation 5 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-off Characteristics vs. Figure 14. Turn-on Characteristics vs.
Collector Current Collector Current
1000 200
Common Emitter Common Emitter
VGE = 15V, RG = 3 VGE = 15V, RG = 3
o
TC = 25 C
o 100 TC = 25 C tr
o o
TC = 175 C TC = 175 C
Switching Time [ns]

Switching Time [ns]


td(off)

100

tf td(on)

10

10 5
0 30 60 90 120 150 0 30 60 90 120 150
Collector Current, IC [A] Collector Current, IC [A]

Figure 15. Switching Loss vs. Collector Current Figure 16. Switching Loss vs. Gate Resistance
30 30
Common Emitter Common Emitter
VGE = 15V, RG = 3 VCC = 400V, VGE = 15V
10 TC = 25 C
o
Eon
IC = 75A
o 10 o
TC = 25 C
TC = 175 C
Switching Loss [mJ]
Switching Loss [mJ]

o
TC = 175 C Eon

Eoff
1 Eoff

0.1 0.5
0 30 60 90 120 150 0 10 20 30 40 50
Collector Current, IC [A] Gate Resistance, RG [ ]

Figure 17. SOA Characteristics Figure 18. Turn off Switching SOA
Characteristics
500 300

10s
100 100
Collector Current, Ic [A]

100s
Collector Current, IC [A]

1ms
10
10 ms
DC 10

1 *Notes:
o
1. TC = 25 C
o
2. TJ = 175 C Safe Operating Area
o
3. Single Pulse VGE = 15V, TC = 175 C
0.1 1
1 10 100 1000 10 100 1000
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

2010 Fairchild Semiconductor Corporation 6 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Current Derating Figure 20. Load Current vs. Frequency
160 250
Common Emitter Square Wave
o
140 VGE = 15V TJ <= 175 C, D = 0.5, VCE = 400V
VGE = 15/0V, RG = 3
200

Collector Current, IC [A]


120
Collector Current, IC [A]

100
150 o
TC = 75 C
80

60 100

o
40 TC = 100 C
50
20

0 0
25 50 75 100 125 150 175 1k 10k 100k 1M
o
Case Temperature, TC [ C] Switching Frequency, f [Hz]

Figure 21. Forward Characteristics Figure 22. Reverse Current


400 10000

1000
o
TC = 175 C
Reverse Currnet, IR [A]

100
Forward Current, IF [A]

o o
TC = 175 C TC = 25 C 100
o
TC = 75 C TC = 125 C
o

o 10
TC = 125 C

10 o
TC = 25 C 1 o
TC = 75 C
o
TC = 75 C
o 0.1
TC = 125 C
o
o TC = 25 C
TC = 175 C
1 0.01
0 1 2 3 0 100 200 300 400 500 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 23. Stored Charge Figure 24. Reverse Recovery Current


900 200
o o
TC = 25 C TC = 25 C
Stored Recovery Charge, Qrr [nC]

o
Reverse Recovery Time, trr [ns]

750 TC = 175 C o
TC = 175 C ---
160

600
120
450
di/dt = 200A/s di/dt = 100A/s
di/dt = 100A/s 80 di/dt = 200A/s
300

150 40

0 0
0 20 40 60 80 0 20 40 60 80
Forward Current, IF [A] Forward Current, IF [A]

2010 Fairchild Semiconductor Corporation 7 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Typical Performance Characteristics

Figure 25. Transient Thermal Impedance of IGBT

0.3

Thermal Response [Zthjc]


0.1 0.5

0.2
0.1
0.05
0.01 0.02 PDM
0.01
t1
single pulse t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

Figure 26. Transient Thermal Impedance of Diode

1
Thermal Response [Zthjc]

0.5

0.2
0.1
0.1

0.05
PDM
0.02
0.01 t1
t2
0.01 single pulse Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.005
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
Mechanical dimensions

Figure 27. TO-247 3L - 3LDS, POWER TO247, NON JEDEC

Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchilds worldwide terms and conditions, spe-
cifically the warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductors online packaging area for the most recent package drawings:

http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TP247-003#

2010 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com


FGY75N60SMD Rev. C2
FGY75N60SMD 600 V, 75 A Field Stop IGBT
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Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design
may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later


Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Obsolete Not In Production Semiconductor. The datasheet is for reference information only.
Rev. I68

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FGY75N60SMD Rev. C2