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STMicroelectronics
Technology & Design Platforms, Crolles
February 2016
Best-in-class BiCMOS
BiCMOS055 (B55)* is:
fT
HS cells: ST data IBM data
The latest BiCMOS technology developed
SG13G2 (IHP)
BiCMOS055
BICMOS9HP
demanding Optical, Wireless and High-
BICMOS8XP
(IBM)
(ST)
BiCMOS9MW
400 800
(IBM)
Performance Analog Applications
(ST)
300 600
INTEL
200 400
manufacturing facility 0 0
130 nm 90 nm 55 nm
Pre-production qualified CMOS node
(*) P. Chevalier et al, 55 nm Triple Gate Oxide 9 Metal Layers SiGe BiCMOS Technology Featuring 320 GHz fT / 370 GHz fMAX HBT and High-Q Millimeter-Wave Passives
Proceedings of the 2014 International Electron Devices Meeting (IEDM), San Francisco, CA (USA), 15-17 December 2014, pp. 7779
BiCMOS055 February 2016
15 years BiCMOS at ST
Continuous improvement of SiGe HBT performance with CMOS scaling
fT and fMAX increased by a factor of ~6 from 0.35m to 55nm CMOS nodes
400
BiCMOS6G
BiCMOS7
BiCMOS7RF
300 BiCMOS9
BiCMOS9MW
BiCMOS055
fT (GHz)
200
100
0
0.1 1 10 100
Collector current density JC (mA/m)
400
BiCMOS6G
BiCMOS7
BiCMOS7RF
300 BiCMOS9
BiCMOS9MW
BiCMOS055
fMAX (GHz)
200
100
0
0.1 1 10 100
+ + +
SiGe NPN HBTs AMOS varactors Thick copper BEOL
(High-Speed Diode varactors 5 fF/m MIM*
Medium-Voltage Thin Film Resistor*
& High-Voltage*) Transmission lines
Inductors
M1 M1
polySi polySi
M2 to Last Metal Layer 5.5m 3.1m
RF MOM
C0~0.9 fF/m (M1-M2) to ~3.0 fFm (M1-M5) / CV1 < 1 ppm/V
MIM
C0=5.0 fF/m / CV1 < 150 ppm/V / CV2 < 100 ppm/V
Spectre Cadence
Hspice Synopsys
GoldenGate Agilenteesof