MDU1931 Single N-Channel Trench MOSFET 80V

MDU1931
Single N-channel Trench MOSFET 80V, 100A, 3.6m

General Description Features

The MDU1931 uses advanced MagnaChips MOSFET VDS = 80V
Technology, which provides high performance in on-state ID = 100A @VGS = 10V
resistance, fast switching performance and excellent RDS(ON)
quality. MDU1931 is suitable device for Synchronous < 3.6m @VGS = 10V
Rectification For Server and general purpose applications. 100% UIL Tested
100% Rg Tested

D
D D D D D D D D

G
S S S G G S S S

PDFN56 S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 80 V
Gate-Source Voltage VGSS 20 V
o
TC=25 C (Silicon Limited) 127.2
o
TC=25 C (Package Limited) 100.0
Continuous Drain Current (1) ID
TC=100oC 80.5 A
o (3) (3)
TA=25 C 20.5
Pulsed Drain Current IDM 400.0
TC=25oC 96.2
o
Power Dissipation TC=100 C PD 38.5 W
o (3) (3)
TA=25 C 2.5
Single Pulse Avalanche Energy (2) EAS 242 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
(1)
Thermal Resistance, Junction-to-Ambient RJA 50 o
C/W
Thermal Resistance, Junction-to-Case RJC 1.3

Aug 2014. Rev. 1.1 1 MagnaChip Semiconductor Ltd.

 MDU1931 Single N-Channel Trench MOSFET 80V
Ordering Information
Part Number Temp. Range Package Packing RoHS Status
MDU1931VRH -55~150oC PDFN56 Tape & Reel Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 80 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 64V, VGS = 0V - - 1.0
A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID =50A - 2.9 3.6 m
Forward Transconductance gfs VDS = 10V, ID =50A - 80.0 - S
Dynamic Characteristics
Total Gate Charge Qg(10.0V) - 68.5 -
VDS = 40.0V, ID = 50.0A,
Gate-Source Charge Qgs - 18.2 - nC
VGS = 10V
Gate-Drain Charge Qgd - 15.7 -
Input Capacitance Ciss - 4,630 -
VDS = 40.0V, VGS = 0V,
Reverse Transfer Capacitance Crss - 40 - pF
f = 1.0MHz
Output Capacitance Coss - 1,050 -
Turn-On Delay Time td(on) - 19.6 -
Rise Time tr VGS = 10V, VDS = 40.0V, - 41.0 -
ns
Turn-Off Delay Time td(off) ID = 50A , RG = 3.0 - 30.3 -
Fall Time tf - 18.9 -
Gate Resistance Rg f=1 MHz - 2.0 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.80 1.2 V
Body Diode Reverse Recovery Time trr - 60.0 - ns
IF =50A, dl/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr - 110.0 - nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited
2. EAS is tested at starting Tj = 25, L = 1.0mH, IAS = 22.0A, VGS = 10V.
3. T < 10sec.

Aug 2014. Rev. 1.1 2 MagnaChip Semiconductor Ltd.

 MDU1931 Single N-Channel Trench MOSFET 80V
100 4.0

Drain-Source On-Resistance [m]

90

80 5.0V
3.5
ID, Drain Current [A]

6.0V
70

60 VGS = 10V
VGS = 10V
50 3.0

40
4.0V
30
2.5
20

10

0 2.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 10 20 30 40 50 60 70 80 90 100

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 10
Notes : Notes :
1. VGS = 10 V 9
ID = 50.0A
1.6 2. ID = 50.0 A
Drain-Source On-Resistance

Drain-Source On-Resistance

8
RDS(ON), (Normalized)

7
1.4
RDS(ON) [m ],

1.2 5
TA = 25

4
1.0
3

2
0.8
1

0.6 0
-50 -25 0 25 50 75 100 125 150 4 5 6 7 8 9 10

o VGS, Gate to Source Volatge [V]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

90 100
Notes : Notes :
VGS = 0V
80 VDS = 10V
IDR, Reverse Drain Current [A]

70
ID, Drain Current [A]

60
10
TA=25

50

40 TA=25

30
1
20

10

0
0 1 2 3 4 5 6 7 8 0.0 0.3 0.6 0.9 1.2 1.5

VSD, Source-Drain voltage [V]

VGS, Gate-Source Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Aug 2014. Rev. 1.1 3 MagnaChip Semiconductor Ltd.

 MDU1931 Single N-Channel Trench MOSFET 80V
10 6000
Ciss = Cgs + Cgd (Cds = shorted)
Note : ID = 50A
Coss = Cds + Cgd
VDS = 40V Ciss Crss = Cgd
5000
8
VGS, Gate-Source Voltage [V]

4000

Capacitance [pF]
6
Coss
3000
Notes ;
4 1. VGS = 0 V
2000 2. f = 1 MHz

2 1000 Crss

0
0 0 5 10 15 20 25 30 35 40
0 10 20 30 40 50 60 70

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

10
3 140

120

10
2 1 ms
100
ID, Drain Current [A]
ID, Drain Current [A]

Operation in This Area

is Limited by R DS(on) 10 ms 80
1
10
100 ms 60

1s
10s 40
10
0
DC

Single Pulse 20
TJ=Max rated
TC=25

-1
10 0
-1 0 1 2 25 50 75 100 125 150
10 10 10 10

VDS, Drain-Source Voltage [V] TC, Case Temperature [ ]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

10 D=0.5
0
Z JA(t), Thermal Response

0.2

0.1
-1
10 0.05

0.02

-2 0.01
10 Notes :
Duty Factor, D=t 1/t2
single pulse PEAK TJ = PDM * Z JC* R JC(t) + TC

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

Aug 2014. Rev. 1.1 4 MagnaChip Semiconductor Ltd.

 MDU1931 Single N-Channel Trench MOSFET 80V
Package Dimension

PDFN56 (5x6mm)
Dimensions are in millimeters, unless otherwise specified

MILLIMETERS
Dimension
Min Max
A 0.90 1.10
b 0.33 0.51
C 0.20 0.34
D1 4.50 5.10

D2 - 4.22

E 5.90 6.30
E1 5.50 6.10
E2 - 4.30
e 1.27BSC
H 0.41 0.71
K 0.20 -
L 0.51 0.71

0 12

Aug 2014. Rev. 1.1 5 MagnaChip Semiconductor Ltd.

 MDU1931 Single N-Channel Trench MOSFET 80V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Aug 2014. Rev. 1.1 6 MagnaChip Semiconductor Ltd.