Beruflich Dokumente
Kultur Dokumente
First A. Author, Second B. Author, Jr., and Third C. Author, Member, IEEE
A highly reliable and efficient differential type
Buck-Boost DC-AC converters.
Abstract With Buck Boost inverter we can achieve output voltage with peak value greater or smaller than the dc input
voltage in a single stage. The conventional structure of Buck Boost inverter uses current bidirectional IGBT. IGBT has
features like long tail current, fixed voltage drops and thats why its switching losses are relatively higher. In this
paper, we have proposed switching cells structure in Buck Boost inverter instead of using current bidirectional IGBT.
In switching cell structure, mosfets and external diodes with very fast reverse recovery characteristics are used, while
the body diodes will have no chance of conducting current. As a result, switching and conduction losses will be
reduced and diode performance will be improved. This new structure will have an additional advantage of having no
shoot through problem so we can eliminate dead time or in other words reliability is increased. In order to further
increase the efficiency, a modified switching scheme is also proposed. In conventional switching strategy, all the
power switches operate in high frequency all the time and suffer from high voltage/current stresses which results in
high switching and conduction losses. While in the proposed switching scheme for modified inverter power mosfets of
each leg of differential buck boost inverter will operate in high frequency for only half cycle which will result in
improved efficiency.
(Note that the organization of the body of the paper is at the authors discretion; the only required sections are Introduction,
Methods and Procedures, Results, Conclusion, and References. Acknowledgements and Appendices are encouraged but optional.)
Index Terms Bidirectional IGBT, Buck Boost inverter, switching cell, switching/conduction losses. For a list of suggested keywords,
send a blank e-mail to keywords@ieee.org or visit http://www.ieee.org/organizations/pubs/ani_prod/keywrd98.txt\
Note: There should no nonstandard abbreviations, acknowledgments of support, references or footnotes in in the abstract.
Vin
L V0 in lower voltage stress across filter capacitors. The
structure of this buck boost inverter is composed of
R
two current bidirectional dc-dc buck boost converters
S1 C S3 and the load is connected differentially across the two
converters as shown in Fig.4.
Fig. 1. The conventional voltage source inverter or buck inverter
v0
R
In order to cope with this complication there are two S2 S1 S3 S4
possible solutions. The first one is to make an addition
of a line-frequency step-up transformer in the
full-bridge inverter [5], as shown in Fig. 2. But this
C1 v1 L1 Vin + L2 v2 C2
structure results in increased volume, cost and weight -
and the power density is also reduced greatly with
noise pollution.
Another possible solution is to use a two-stage cascade Fig.4. The Buck Boost inverter.
structure, as depicted in Fig. 3. In which dc-dc boost
converter is used between dc source and inverter [6]. Each converter generates a sinusoidal output voltage
But in this structure the combined efficiency losses with same dc offset. The modulation of each converter
contribute unnecessarily to low efficiency levels. The is 180 degrees out of phase with respect to each other.
cascaded two stage structure has also greater system Since the load is connected differentially, dc offsets are
size, weight and cost. cancelled out and pure sinusoidal output voltage is
achieved.Fig.5. shows the output voltage of each
Transformer
converter and the voltage across the load.
Renewable Converter 1
AC load
energy DC/AC 0
or grid VDC
source.
-v
Converter 2
0
VDC
Fig.2. Inverter with a transformer.
-v
Voltage across the load
v
Boost DC-DC -v
S4 t
S3 t P-cell N-cell
= or
0
V. AC GAIN OF THE PROPOSED BUCK BOOST INVERTER
S2
S1
vref 1
carrier Peak value of output voltage can be calculated from (2) and
vref 2 1 d 2
1
(3) as:
carrier
0.5
V0 2V2 2VDC
Where V2 is maximum negative voltage that appears
0
S4
S3
across the capacitor of 2nd buck boost converter and is
v1
0
VDC V sin t calculated as
VDC V D
V2 in .
VDC V sin t (V ) : t ( s ) 1 D
v2
0
VDC V sin t
D=maximum duty cycle of switch S3 or S1.
VDC
For minimum voltage stress across semiconductor
VDC V sin t
(V ) : t ( s )
V
v0 V0 sin t
devices VDC 0 is chosen.
2
0
Vin D V
Henc V0 2 2 0
1 D 2
(V ) : t ( s )
V0 D
v0 v1 v2 2 A sin t (1) Ac gain=
Vin 1 D
d2 (Vin ) (2)
v2 VDC A sin t Calculated ac gain is equally verified with simulation
1 d2
v0 v1 v2 2 A sin t results that are included in fig. (). The circuit
OR v0 V0 sin t where V0 2 A.
parameters along with its results are also summarized
(3) in table[].
V
In above equations VDC 0 .
2
V INPUT VOLTAGE Vin 90V
But the best case is VDC 0 because in this case the
2 Maximum duty of switch 0.6
voltage stress across the semiconductor devices will be S1 Dmax1
minimum. Hence for further calculations this value will be
considered. Maximum duty of switch S3 0.6
From equations (1) -(3): Dmax 3
v0 v
0 sin t Switching frequency 20KHz
Inductors L1 , L2 , L3 , L4
2Vin 2Vin
d1 . (4) 500uH
v0 v
0 sin t 1
2Vin 2Vin Capacitors C1 , C2 10uF
1
1 d1
v0
v0
sin t 1
. (5) Load R 50
2Vin 2Vin AC gain 1.5
v0 v Maximum output voltage 135V
0 sin t
d2
2Vin 2Vin
v0 v
. (6) V0 Ac gain Vin
0 sin t 1
2Vin 2Vin
1
1 d2 . (7)
v0 v0
sin t 1
2Vin 2Vin
The voltage reference which is derived in (4) and (6) can be
used to generate the gate signals for switch S1 and S3
respectively. While gate signals of S 2 is complement of S1
and gate signals of S 4 is complement of S3 . But in Fig.8.
we have used (5) and (7) to generate gate signals for S 2 and
di2 V
Similarly, in (3)
dt L1
di3 Vin
(4)
dt L3
di4 V
in (5)
dt L4
v1 C L2 L1 Vin + L3 L4
C2 v2
1 -
i2 i1 i3 i4
2) Mode 2: -
During this mode S1 is turned off while S2 is turned on.
While S3 remains in on state and S4 in off state as
shown in fig (). The body diodes of S1 and S4 are
reverse polarized by v1 Vin and v2 Vin
respectively. While since S 2 and S3 are conducting
hence their body diodes will also be reverse polarized
because of zero potential difference across diodes
For positive portion of output voltage.
ideally. The inductors current ripple during this mode
1) Mode 1: -
In this mode S1 and S3 are turned on while S2 and S4 are will be as given below while assuming voltage small
off. The body diodes of S1 and S3 are reverse polarized ripple approximation;
because S1 and S3 are on and ideally zero potential di1 v di v
1 , 2 1
difference appears across its body diodes. While the dt L1 dt L2
body diodes of S2 and S4 are reverse polarized by
di3 Vin di4 V
v1 Vin and v2 Vin respectively. Considering , in
dt L3 dt L4
that switches and diodes are ideal, voltage that appears
across L1 and L3 is Vin . In steady state during this mode
vL1 Vin (1) iin1 0 & iin2 i3 i4
i0 v0 i0 v0
R R
S2 S4 S2 S4
D1 D3 D1 D3
i01 iin1 iin2 i02 i01 iin1 iin2 i02
S1 S3 S1 S3
D2 D4 D2 D4
v1 C L2 L1 Vin + L3 L4
C2 v2 v1 C L2 L1 Vin + L3 L4
C2 v2
1 - 1 -
i2 i1 i3 i4 i2 i1 i3 i4
6) Mode 6: -
3) Mode 3: - During this mode S3 and S 2 are in off state while
During this mode S1 and S3 are off while S 2 and S 4 S1 and S4 are in the on state. This mode only appears
are on as shown in fig (). Here again the body diodes of in negative portion of sinusoidal voltage. All the body
mosfets will be reverse polarized. Diodes D2 and diodes will be reverse polarized. External fast recovery
D4 are forward biased to provide free wheeling path to diodes D1 and D3 will be forward biased by
i1 and i3 respectively. While diodes D1 and D3 are freewheeling current. While assuming voltage small
reverse biased. Assuming output voltage small ripple ripple approximation the inductor current ripple will be
approximation inductor current ripple will be calculated as below.
calculated as, di1 Vin di2 V
, in
di1 v di2 v1 dt L1 dt L2
1 ,
dt L1 dt L2 di3 v di v
2 , 4 2
di3 v di v dt L3 dt L4
2 , 4 2
dt L3 dt L4 i0 v0
7) Mode 7: -
v1 C L2 L1 Vin + L3 L4
C2 v2
1 - The operation is shown in Fig. (). Inductor current
i2 i1 i3 i4
ripple calculation will be same like mode 3. As can be
seen in the figure input current will be zero during this
4) Mode 4: - portion. But in this mode direction of i0 will be
Here the operating mode is exactly similar to mode 2.
opposite that of mode 3.
v0
For negative portion of output voltage i0
5) Mode 5: - v1 C L2 L1 Vin + L3 L4
C2 v2
1 -
The operation during this mode is shown in Fig. (). Its i2 i1 i3 i4
analysis is similar like mode 1. The difference is that
output current is flowing in other direction for pure
8) Mode 8: -
resistive load. Capacitor C1 is discharging while C2
This operating mode is exactly similar to mode 6.
is charging.
ref1 1 d1
VII. FILTER CAPACITORS REARRANGEMENT FOR INPUT
carrier
CURRENT CONTINUITY
will increase.
S3
i0 v0
R C2
C1
v1
S2 v1 v2 S4
D1 D3
i01 iin1 iin2 i02 v2
S1 S3
D2 D4
v0
Vin + L3
L2 L1 L4
-
i2 i1 i3 i4
The input current equations will be calculated as: In the positive portion of output voltage, S1 and S2 are
iin1 i1 i2 i0 complementary signals and will operate at higher
frequencies. S3 will be in off state and S4 in on state
iin2 i3 i4 i0
during this half cycle. Voltage across capacitor
From equations, above i1 , i2 , i3 , i4 & i0 are either quasi C1 and C2 will be.
continuous or continuous hence iin and iin will also be v1 0
1 2
0 t (6)
quasi continuous. v2 A sin(t )
d1 0 0 t i0 v0
A sin t (10) R
d1 A sin wt V t 2 S2
D1 D3
S4
in iin1 iin2
A sin(t ) S1 S3
d 2 0 t D2 D4
A sin( wt ) Vin (11)
d =0 v1 C + L3
2 t 2 1
L2
i2
L1
i1
Vin
-
L4 C2 v2
i3 i4
S4 v1 C
t 1
L2 L1 Vin +
-
L3 L4 C2 v2
t0 t1 t2 t3 t4 t5 t6 t7 t8 t9 t10 t11 i2 i1 i3 i4
i0 v0
i0 v0
R
S2 S4 R
D1 D3 S2 S4
D1 D3
iin1 iin2
S1 S3 iin1 iin2
D2 D4 S1 S3
D2 D4
v1 C
v1 C
L2 L1 Vin + L3 C2 v2
1 -
L4 + L3
L2 L1 Vin L4 C2 v2
i2 i1 i3 i4 1 -
i2 i1 i3 i4
6) Mode 6: -
2) Mode 2: -
The operation during this mode is shown in Fig. (). This In this mode S1 , S2 and S3 are in off state while S4 is
period is a result of dead time between the two on. The operation is shown in fig. (). In this mode
complementary signals S3 and S4 . In this mode S1 and S2 are in off state simultaneously because of
S1 ,S3 and S4 are in off state. Diodes D3 and D4 are dead time between complementary signals. D1 and D2
forward biased by freewheeling current i4 and i3 are forward biased by freewheeling current i2 and i1
respectively. Since S1 is in off state and D1 is reverse respectively. Since S3 is in off state and D3 is reverse
polarized i0 will pass through S2 and D2 .
polarized i0 will pass through S4 and D4 . [26] P.W. Sun, J.-S. Lai, H. Qian, W.S. Yu, C. Smith, J. Bates, B. Arnet, A.
Litvinov, and S. Leslie, Efficiency evaluation of a 55kW
i0 v0 soft-switching module based inverter for high temperature hybrid
R electric vehicle drives application, in Proc. 25th IEEE Applied Power
S2 S4 Electron. Conf. and Expo., 2010, pp. 474--479.
D1 D3
iin1 iin2
S1 S3 However, the delayed responses of gate
D2 D4 drive circuits and switching devices produce overlap time
and/or dead time among the switches. The overlap [see Fig.
v1 C L2 L1 Vin + L3 L4
C2 v2
1 - 2(a)] and dead time [see Fig. 2(b)] cause current spikes
i2 i1 i3 i4
(di/dt) and voltage spikes (dv/dt), respectively, often
damaging the semiconductor devices. Thus, overlap and
7) Mode 7: - dead time among the switches severely impair the reliability
In this mode S2 and S4 are in on state while the other of traditional acac converters, which limits their practical
switches are in off state. The operation is shown in fig. applications. Soft commutation strategies for smooth current
(). Current i1 freewheels through D2 while i0 passes transition have been researched in [22] and [39] for the
through D4 and S4 . purpose of providing safe commutation and to avoid the use
of lossy snubber circuits. All of these strategies use
i0 v0
voltage/current sensing modules to enable the switching
R devices to conduct according to the polarity of the input
S2 S4
D1 D3 voltage/current. The sensing modules, however, increase the
iin1 iin2 cost and control complexity of the converter, and these
S1 S3
D2 D4 methods still cannot provide safe and reliable commutation
when the input voltage is highly distorted, especially around
v1 C L2 L1 Vin + L3 L4
C2 v2 the zero crossing point [13]. Similar to the method
1 -
i2 i1 i3 i4 using RC snubber circuits, these methods also cannot protect
the switching devices from high current spikes when
8) Mode 8: - shoot-through caused by EMI noises misgating-on
This period is dead time and same as mode 6. occurs.Body (or antiparallel) diodes of standard
metaloxide semiconductor field-effect transistors
(MOSFETs) exhibit poor reverse recovery characteristics
In addition, when it operates [23], [24]; therefore, insulated gate bipolar junction
at higher dc bus voltage of each cell, it loses the benefit of transistors (IGBTs) are commonly used as
employing power switching devices in the traditional hard switching acac
MOSFETs as the active switches for fast switching speed and converters. Fig. 3 illustrates the effect of reverse recovery
efficiency improvement because of the reverse recovery problem
issues of the MOSFETs body diode in the traditional buck-type
of the body diode [21]-[23] unless people employ acac
soft-switching techniques [24]-[26]. For example, when the converter. Switches S3 and S4 are turned on for vin > 0 for the
cell safe commutation. To avoid current shoot-through, finite
dc bus voltage goes up to 300V to 600V, people can not dead
simply time between S1 and S2 is required and the output inductor
adopt high voltage power MOSFETs (600V to 900V rated current freewheels through the body diode DB of S2 during the
voltage, such as CoolMOS or MDmesh series) to work at dead time. When S1 is turned on after the dead time, DB flows
hard-switched situation like traditional cascade H-bridge current in reverse direction for a short interval due to its
inverter. reverse
recovery as shown in Fig. 3(b). Due to this, the reverse
[21] S.-Y. Park, P.W. Sun, W. Yu and J.-S. Lai, Performance evaluation of
high voltage super junction MOSFETs for zero-voltage soft-switching recovery current creates a short circuit of input voltage,
inverter applications, in Proc. 25th IEEE Applied Power Electron. which causes
Conf. and Expo., 2010, pp. 387--391. large current spikes in the switches and diodes. [24].
[23] C.M. Johnson, and V. Pickert, Three-phase soft-switching voltage [23] L. Saro, K. Dierberger, and R. Redl, High-voltage MOSFET behavior
source converters for motor drives. II. Fundamental limitations and in soft-switching converters: Analysis and reliability improvements, in
critical assessment, IEE Proceedings on Electric Power Applications, Proc. 20th IEEE Telecom. Energy Conf., 1998, pp. 3040.
vol. 146, no. 2, pp. 155162, 1999 [24] X. D. Huang, H. J. Yu, J.-S. Lai, A. R. Hefner, and D. W. Berning,
[24] P.W. Sun, J.-S. Lai, H. Qian, W.S. Yu, C. Smith, and J. Bates, High Characterization of paralleled super junction MOSFET devices under
efficiency three-phase soft-switching inverter for electric vehicle hard and soft-switching conditions, in Proc. 32nd IEEE Power Electron.
drives, in Proc. IEEE Vehicle Power and Propulsion Conf., 2009, pp. Spec. Conf., 2001, vol. 4, pp. 21452150. [39] J. H. Kim, B. D. Min, B. H.
761--766. Kwon, and S. C. Won, A PWM buckboost ac
> REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 11
chopper solving the commutation problem, IEEE Trans. Ind. Electron., however, increase the cost and control complexity of the
vol. 45, no. 5, pp. 832835, Oct. 1998. H. Shin, H. Cha, H. Kim, and D.
converter, and these methods still cannot provide safe and
Yoo, Novel single-phase PWM AC
AC converters solving commutation problem using switching cell structure reliable
and coupled inductor, IEEE Trans. Power Electron, vol. 30, no. 4, commutation when the input voltage is highly distorted,
pp. 21372147, Apr. 2015. especially around the zero crossing point [13]. Similar to the
method
using RC snubber circuits, these methods also cannot protect
The traditional direct PWM acac converters are the simplest the
converters, and they have been derived from the traditional switching devices from high current spikes when
dc shoot-through
dc converters by adaption of ac switches. The traditional caused by EMI noises misgating-on occurs.
singlephase boost-type dcdc converter is shown in Fig. 1(a), Body (or antiparallel) diodes of standard metaloxide
and semiconductor field-effect transistors (MOSFETs) exhibit
its counterpart traditional boost type acac converter is poor
shown reverse recovery characteristics [23], [24]; therefore,
in Fig. 1(b). The switching devices of the converter shown in insulatedgate bipolar junction transistors (IGBTs) are
Fig. 1(b) are connected in series, thereby causing commonly used as
commutation switching devices in the traditional hard switching acac
problem. The switches (S1, S4) and (S2, S3) are gated on/off converters. Fig. 3 illustrates the effect of reverse recovery
complementarily, and the converter can be operated properly problem
with ideal gate signals. However, the delayed responses of of the MOSFETs body diode in the traditional buck-type
gate acac
drive circuits and switching devices produce overlap time converter. Switches S3 and S4 are turned on for vin > 0 for the
and/or safe commutation. To avoid current shoot-through, finite
dead time among the switches. The overlap [see Fig. 2(a)] dead
and time between S1 and S2 is required and the output inductor
dead time [see Fig. 2(b)] cause current spikes (di/dt) and current freewheels through the body diode DB of S2 during the
voltage dead time. When S1 is turned on after the dead time, DB flows
spikes (dv/dt), respectively, often damaging the current in reverse direction for a short interval due to its
semiconductor devices. Thus, overlap and dead time among reverse
the switches recovery as shown in Fig. 3(b). Due to this, the reverse
severely impair the reliability of traditional acac converters, recovery current creates a short circuit of input voltage,
which limits their practical applications. which causes
A common approach to address the aforementioned problem large current spikes in the switches and diodes. [24]. The SC
is to add bulky and lossy resistorcapacitor (RC) snubbers structure shown in Fig. 4 can inherently overcome this
and allow finite dead time in the gate signals. However, this problem.
method decreases converter efficiency and achievable There are two types of SCs: P-type and N-type, as shown in
voltage Fig. 4 [25], [26]. Both SCs consist of one switching device
gain [20], [21] and causes distortion of the output voltage such
waveforms because energy is dissipated in the resistor of RC as IGBT/MOSFET and one externally selected freewheeling
snubber diode connected in series. In the P-type SC, the common
circuits and is not transferred to output during the dead time. point
Furthermore, the snubber approach cannot protect the is connected to positive terminal of current source or
switching inductor,
devices from high current spikes when shoot-through caused and in the N-type SC, the common point is connected to
by negative
EMI noises misgating-on occurs. terminal of current source or inductor [26]. Therefore,
Soft commutation strategies for smooth current transition designing
have been researched in [22] and [39] for the purpose of converters/inverters/rectifiers with the SC structure can
providing safe commutation and to avoid the use of lossy eliminate the current shoot-through problem. Many power
snubber electronics
circuits. All of these strategies use voltage/current sensing topologies, including multilevel dcac inverters [20], [21],
modules to enable the switching devices to conduct highefficiency dcac inverters [28][37], and acdc rectifier
according to [37] are
the polarity of the input voltage/current. The sensing implemented with the SC structure.
modules,
In [13], the SC structure is successfully employed in the tra B. Dead Time
ditional single-phase acac converters for the first time. The The dead time in which all the switching devices are turned
boost-type example is shown again in Fig. 1(c). As shown, off is shown in Fig. 11(a). The capacitors C1 and C2 bypass
the the
converter is implemented with the SC structure and coupled inductors currents during the dead time. The bypass modes
inductors, and they have the following significant for
advantages. positive and negative half cycle of input voltage are shown
1) They do not require current/voltage sensing modules or in
lossy snubber circuits for the safe commutation, and can Fig. 11(b) and (c), respectively
be operated properly even with highly inductive load and
distorted input voltage.
2) They can be operated with high switching frequency
without the reverse recovery problem associated with
MOSFET body diode and the switching devices are not
damaged even with dead time or overlap time during
operation.
C. Overlap Time
In this interval, all the switching devices are turned on,
as shown in Fig. 12(a). The limiting inductors limit the
shoot-through current by providing a high impedance path
when
all the switches are turned on either by purpose or
mismatched
gate signals. Fig. 12(b) and (c) shows this mode for vin > 0
and
vin < 0, respectively.
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XIII. SOME COMMON MISTAKES accept or reject a paper is made by the conference editors and
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An excellent style manual and source of information for information to allow readers to perform similar
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APPENDIX
Appendixes, if needed, appear before the
acknowledgment.
First A. Author (M76SM81F87) and the other authors may include
biographies at the end of regular papers. Biographies are often not included
ACKNOWLEDGMENT in conference-related papers. This author became a Member (M) of IEEE in
1976, a Senior Member (SM) in 1981, and a Fellow (F) in 1987. The first
The preferred spelling of the word acknowledgment in paragraph may contain a place and/or date of birth (list place, then date).
American English is without an e after the g. Use the Next, the authors educational background is listed. The degrees should be
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acknowledgments. Avoid expressions such as One of us country, and year degree was earned. The authors major field of study
should be lower-cased.
(S.B.A.) would like to thank ... . Instead, write F. A. Author The second paragraph uses the pronoun of the person (he or she) and not
thanks ... . Sponsor and financial support the authors last name. It lists military and work experience, including
acknowledgments are placed in the unnumbered footnote summer and fellowship jobs. Job titles are capitalized. The current job must
have a location; previous positions may be listed without one. Information
on the first page, not here. concerning previous publications may be included. Try not to list more than
three books or published articles. The format for listing publishers of a book
REFERENCES within the biography is: title of book (city, state: publisher name, year)
similar to a reference. Current and previous research interests end the
paragraph.
The third paragraph begins with the authors title and last name (e.g., Dr.
Smith, Prof. Jones, Mr. Kajor, Ms. Hunter). List any memberships in
[1] IEEE TRANSACTIONS ON POWER ELECTRONICS, VOL. 27,
professional societies other than the IEEE. Finally, list any awards and work
NO. 2, FEBRUARY 2012 Fault-Tolerant Voltage Source Inverter for
for IEEE committees and publications. If a photograph is provided, the
Permanent Magnet Drives Rammohan Rao Errabelli and Peter
biography will be indented around it. The photograph is placed at the top
Mutschler, Member, IEEE.
left of the biography. Personal hobbies will be deleted from the biography.