PD - 94008

IRFP250N
HEXFET Power MOSFET
l Advanced Process Technology D
l Dynamic dv/dt Rating VDSS = 200V
l 175C Operating Temperature
l Fast Switching RDS(on) = 0.075
l Fully Avalanche Rated G
l Ease of Paralleling ID = 30A
l Simple Drive Requirements S

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial applications where

higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25C Continuous Drain Current, VGS @ 10V 30
ID @ TC = 100C Continuous Drain Current, VGS @ 10V 21 A
IDM Pulsed Drain Current 120
PD @TC = 25C Power Dissipation 214 W
Linear Derating Factor 1.4 W/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 315 mJ
IAR Avalanche Current 30 A
EAR Repetitive Avalanche Energy 21 mJ
dv/dt Peak Diode Recovery dv/dt 8.6 V/ns
TJ Operating Junction and -55 to +175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbfin (1.1Nm)

Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case 0.7
RCS Case-to-Sink, Flat, Greased Surface 0.24 C/W
RJA Junction-to-Ambient 40
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IRFP250N
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 200 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.26 V/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 0.075 VGS = 10V, ID = 18A
VGS(th) Gate Threshold Voltage 2.0 4.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 17 S VDS = 50V, ID = 18A
25 VDS = 200V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
250 VDS = 160V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 123 ID = 18A
Qgs Gate-to-Source Charge 21 nC VDS = 160V
Qgd Gate-to-Drain ("Miller") Charge 57 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time 14 VDD = 100V
tr Rise Time 43 ID = 18A
ns
td(off) Turn-Off Delay Time 41 RG = 3.9
tf Fall Time 33 RD = 5.5, See Fig. 10
Between lead, D
LD Internal Drain Inductance 4.5
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance 7.5
and center of die contact S

Ciss Input Capacitance 2159 VGS = 0V

Coss Output Capacitance 315 pF VDS = 25V
Crss Reverse Transfer Capacitance 83 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
30
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

120
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.3 V TJ = 25C, IS = 18A, VGS = 0V

trr Reverse Recovery Time 186 279 ns TJ = 25C, IF = 18A
Qrr Reverse Recovery Charge 1.3 2.0 C di/dt = 100A/s
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
Starting TJ = 25C, L = 1.9mH
RG = 25, IAS = 18A. (See Figure 12)
ISD 18A, di/dt 374A/s, VDD V(BR)DSS,
TJ 175C
Pulse width 300s; duty cycle 2%.

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 IRFP250N
1000 1000
VGS VGS
TOP 15V TOP 15V

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
100 5.5V
5.5V
5.0V 100 5.0V
BOTTOM 4.5V BOTTOM 4.5V

10

10
4.5V
1 4.5V

1
0.1

20s PULSE WIDTH 20s PULSE WIDTH

TJ = 25 C TJ = 175C
0.01 0.1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

3.5
RDS(on) , Drain-to-Source On Resistance

1000 ID = 30A
I D , Drain-to-Source Current (A)

3.0

100
2.5
TJ = 175 C
(Normalized)

2.0
10
1.5
TJ = 25 C
1.0
1

0.5
V DS = 50V
20s PULSE WIDTH VGS = 10V
0.1 0.0
4.0 5.0 6.0 7.0 8.0 9.0 10.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFP250N
5000 16
VGS = 0V, f = 1 MHZ ID = 18A
V DS= 160V
Ciss = Cgs + Cgd, Cds SHORTED

VGS , Gate-to-Source Voltage (V)

V DS= 100V
Crss = Cgd V DS= 40V
4000
Coss = Cds + Cgd
12
C, Capacitance(pF)

3000
Ciss
8

2000
Coss

4
1000
Crss

0 0
0 20 40 60 80 100
1 10 100 1000
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

ID , Drain Current (A)

100

TJ = 175 C 100
10us

10

100us
TJ = 25 C
10
1
1ms
TC = 25 C
TJ = 175 C 10ms
V GS = 0 V Single Pulse
0.1 1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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 IRFP250N
RD
35 VDS
35
VGS
30 D.U.T.
30 RG
+
V DD
ID , Drain Current (A)

-
25
ID , Drain Current (A)

25
10V
20 Pulse Width 1 s
20 Duty Factor 0.1 %

15
15 Fig 10a. Switching Time Test Circuit
10
10 VDS
90%
5
5

0
0 25 50 75 100 125 150 175
25 50
TC 75
, Case100 125
Temperature (150
C) 175 10%
TC , Case Temperature ( C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
1
Thermal Response(Z thJC )

D = 0.50

0.20

0.1 0.10

PDM
0.05
t1
0.02 SINGLE PULSE
(THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFP250N
800

EAS , Single Pulse Avalanche Energy (mJ)

15V
ID
TOP 7.3A
13A
BOTTOM 18A
VDS L D R IV E R 600

RG D .U .T +
- VD D 400
IA S A
20V
tp 0 .0 1

Fig 12a. Unclamped Inductive Test Circuit 200

V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

12V .2F
QG .3F

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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 IRFP250N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
Low Stray Inductance
Ground Plane

Low Leakage Inductance
Current Transformer
-

+


- +
-

RG dv/dt controlled by RG +
Driver same type as D.U.T. VDD
-
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

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IRFP250N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3.65 (.1 43 ) -D -
1 5.90 (.6 2 6) 3.55 (.1 40 ) 5 .3 0 (.20 9 )
1 5.30 (.6 0 2) 4 .7 0 (.18 5 )
0.25 (.0 1 0) M D B M
-B- -A- 2 .5 0 (.08 9)
1 .5 0 (.05 9)
5 .50 (.21 7) 4

2 0 .30 (.80 0)
1 9 .70 (.77 5) 5.50 (.2 1 7) NOTES:
2X
4.50 (.1 7 7) 1 D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14.5M , 1982.
1 2 3 2 C O N TR O LLIN G D IM E N S IO N : IN C H .
3 C O N F O R M S TO JE D E C O U TLIN E
-C - T O -247-A C .
1 4.8 0 (.5 83 )
4 .3 0 (.1 70 )
1 4.2 0 (.5 59 )
3 .7 0 (.1 45 )

2 .40 (.09 4) LE A D A S S IG N M E N TS
1 .4 0 (.0 56 ) 0 .80 (.03 1)
2 .00 (.07 9) 3 X 1 .0 0 (.0 39 ) 3X 0 .40 (.01 6) 1 - G A TE
2X 2 - D R A IN
0 .2 5 (.0 10 ) M C A S 2.60 (.1 0 2) 3 - SOURCE
5.45 (.2 1 5) 2.20 (.0 8 7) 4 - D R A IN
3 .4 0 (.1 33 )
2X 3 .0 0 (.1 18 )

Part Marking Information

TO-247AC

E XAM P L E : TH IS IS A N IR F P E3 0 A
W ITH A SS E M B L Y P A R T N U M B ER
LOT CODE 3A1Q IN TER N A TIO N A L
R E C T IF IE R IR F P E 3 0
LOGO
3 A 1 Q 9 3 02
A S SE M B L Y D A TE C O D E
LOT CODE (YYW W )
YY = YE A R
W W W EE K

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
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Data and specifications subject to change without notice. 10/00
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