3/1/2017 Patent CN101210346A - Horizontal zone melting method for growing tellurium zinc cadmium single-crystal - Google Patents

Method for growing tellurium-zinc-cadmium crystals by using tellurium solvent solution method Sign in

Patents Application Grant English Chinese

Find prior art Discuss this application View PDF Dow nload PDF

Horizontal zone melting method for growing Publication number CN101210346 A

tellurium zinc cadmium single-crystal Publication type Application
Application number CN 200610148709
CN 101210346 A
Publication date 2 Jul 2008
Filing date 30 Dec 2006
ABSTRACT Priority date 30 Dec 2006

The invention relates to a device and a method for horizontal zone-melting growth Also published as CN101210346B
of CdZnTe single crystal. The device comprises a furnace body, a quartz long Inventors
crystal tube, a long zone-melting boat and a Cd source boat, wherein the furnace Applicant
body comprises a Cd source furnace and a horizontal zone-melting long crystal
Export Citation BiBTeX, EndNote, RefMan
furnace consisting of a plurality of sequentially arranged small furnaces; the
quartz long crystal tube with the Cd source boat and the zone-melting long boat Referenced by (9), Classifications (1), Legal Events (4)

arranged therein is arranged in the furnace body; and the zone-melting long boat External Links: SIPO, Espacenet
is provided with a head neck and a tail neck. The method for horizontal zone-
melting growth of CdZnTe single crystal comprises the following steps of:
disposing Cd, Zn and a seed crystal in the zone-melting long boat, disposing Cd in the Cd source boat, arranging the zone-melting long boat and the Cd source boat in
the quartz long crystal tube, sealing the quartz long crystal tube, placing in the horizontal zone-melting furnace body, heating to synthesize a CdZnTe ingot, refining the
CdZnTe ingot by zone-melting purification to improve the purity of the CdZnTe ingot, and growing CdZnTe single crystal under induction of the seed crystal. The CdZnTe
single crystal produced by the device and the method of the invention has high yield and high purity, and fully meets the application requirement.

DESCRIPTION translated from Chinese CLAIMS (7) translated from Chinese

Technical Field level zone melting cadmium zinc telluride single crystal growth
apparatus and method of the present invention relates to the preparation of a
single crystal, especially broadband group II-VI semiconductor compounds of
cadmium zinc telluride zone melting method of purification and growth of single
crystals of cadmium zinc telluride. Background 1992 Rockwell International
Science Center using molecular beam epitaxy to produce P-on-N heterojunction
plane type HgCdTe LWIR focal plane array detector (LWIR FPA), which
represents the highest performance long wave infrared focal plane array detectors
level. In the 77K, the average of R. HgCdTe A Up to 310 Q cm2 (Ac = 10ti, A =
50y x50u), (see Journal of Electronic Materials, Vol.22, No.8, 1993 ppl049~1053).
Cd096Zno.04Te (211) B substrates and HgCdTe lattice constant match exactly,
can be grown HgCdTe low dislocation density of the epitaxial layer, if no qualified
CdZnTe substrate, it is impossible to obtain an excellent HgCdTe LWIR focal
plane detector row Array. Medium wave and short wave infrared focal plane array
detector (MWIR and SWIRFPA), is currently the world's most sensitive infrared
detectors, they must also be CdZnTe single crystal substrate material. Therefore,
a key material CdZnTe substrates HgCdTe infrared focal plane array detectors
essential. X = 0.1~0.2 of Cd, .xZnxTe is the production of X-ray, Y ray and a
radiation detector of fine materials, the advantage of high energy resolution, fast
response, low power consumption, suitable for work at room temperature, made
of coke After small plane array detector function can have portable, which soon
attracted broad interest to those skilled in the medical equipment, nuclear
radiation detection techniques and astronomical physics. No matter HgCdTe
epitaxial substrate, or do high-energy detectors, require a high-purity single-
crystal cadmium zinc telluride. Art grown cadmium zinc telluride single crystal
material is the use of Bridgman (Bridgman) method, which although using 7N
(99.99999%) of high-purity raw materials, but to obtain single crystals of cadmium
zinc telluride purity tend to be reduced, resulting in decreased purity single
crystals of cadmium zinc telluride
Thethe
Try twonew
mainGoogle
reasons: First, the
Patents, ingredients
with when someone
machine-classified introduced
Google to some
Scholar results, and Japanese
A horizontal zone melting growth of single crystals of cadmium zinc telluride
device, characterized in that the device comprises a furnace body (1), quartz
crystal growth tube (2), zone melting crystal growth boat (3) and cadmium source
boat (4 ): said furnace (1) comprises a temperature control end to end,
respectively, cadmium source furnace (12) and the horizontal zone melting crystal
growth furnace (11), the level of crystal growth furnace (11) by a plurality of
sequentially arranged a small stove composition; placing quartz crystal growth
tube (2) furnace (1), the quartz crystal growth tube (2) is provided with cadmium
source boat (4) and zone melting crystal growth boat (3), cadmium source boat (4
) located cadmium source furnace (12) temperature control zone, zone melting
crystal growth boat (3) located in the zone melting crystal growth furnace (11)
temperature zone; zone melting crystal growth of the boat (3) is provided with a
head constriction (31) and a rear constriction (32).
2. The claim level of the molten zone l CdZnTe single crystal growing
apparatus, wherein the zone melting crystal growth for graphite boat
length zone melting quartz wafer boat or float zone wafer boat length.
3 - kind of horizontal zone melting cadmium zinc telluride single crystal growth
method, wherein the first tellurium, zinc and seed into the zone melting crystal
growth boat (3), cadmium into cadmium source boat (4), After the boat and then
zone melting crystal growth (3) and cadmium source boat (4) one placed in a
quartz crystal growth tube (2) sealed tube, placed in (1) the level of district
heating furnace body, the synthesis of cadmium zinc telluride ingots seed pieces,
after several purification zone melting ingot cadmium zinc telluride, and then by
boat it is located in the zone melting crystal growth (3) of the head of constriction
(31) (7) to guide the CdZnTe ingot grown cadmium zinc telluride single crystals.
According to claim 3, wherein the horizontal zone melting cadmium zinc
telluride single crystal growth method comprising the steps of: high-
purity tellurium and high-purity zinc or zinc telluride synthetic material
placedand South
in the zoneKorean
meltingpatents.
crystal growth boat (3), will be placed in high-

https://www.google.gm/patents/CN101210346A?cl=en&dq=Method+for+growing+tellurium-zinc-cadmium+crystals+by+using+tellurium+solvent+solution+meth 1/6
3/1/2017 Patent CN101210346A - Horizontal zone melting method for growing tellurium zinc cadmium single-crystal - Google Patents
impurities contamination; the second is a variety of long grain contaminated
containers such as low-purity quartz, graphite, boron nitride, etc. caused. This
allows vertical or horizontal Bridgman time (Bridgman) grown single crystals of
cadmium zinc telluride difficult to control the concentration of impurities, cadmium
zinc telluride single crystal is difficult to ensure the purity, which would seriously
affect the finished passing rate of the single crystal material. In addition, Chinese
patent application No. 200510023575.6 of "detector with CdTe, ZnTe and CdZnTe
raw material purification method and apparatus" presented by vapor transport
method for purification of CdZnTe, the drawback is that the product is a
polycrystalline quasi-chemical ratios material, can not be used for the substrate
material, the other is a slower rate of vapor transport, and thus the production of
polycrystalline cadmium zinc telluride low efficiency, is not suitable for application
in industry. Object of the present invention to overcome the deficiencies of the
prior art, to provide a level of zone melting growth cadmium zinc telluride Cd ^ Z ^
Te single crystal device and method, the cadmium zinc telluride zone melting
purification and growth combined with monocrystalline up in the first several times
before the crystal growth of zone melting purification, removing impurities and
contaminants artificial crystal growth container, and then use the seed guide
grown single crystals of cadmium zinc telluride, cadmium zinc telluride single
crystals grow The purity than any Bridgman-grown single crystals of cadmium
zinc telluride high purity and stability. Aspect of the present invention: a horizontal
zone melting growth of single crystals of cadmium zinc telluride CdhZrWTe
apparatus comprises a furnace, quartz crystal growth pipe, zone melting crystal
growth boats and cadmium source boat: the furnace include temperatures end to
end control of cadmium source furnace and horizontal zone melting crystal growth
furnace, the level of crystal growth furnace by a plurality of sequentially arranged a
small stove composition; the furnace body is placed quartz crystal growth tube,
the quartz crystal tube equipped with a long boat and cadmium source zone
melting crystal growth boat, cadmium source boat located cadmium source
furnace temperature control zone, zone melting crystal growth boat located in the
zone melting crystal growth furnace temperature control zone; zone melting
crystal growth provided the boat head neck and tail necking. Zone melting crystal
growth of the graphite boat length zone melting quartz wafer boat or boat zone
melting crystal growth. A horizontal zone melting growth cadmium zinc telluride
Cd BU xZrixTe single crystal, first tellurium, zinc and seed into the inner zone
melting crystal growth inside the boat, cadmium and cadmium sources into the
boat, then the boat and zone melting crystal growth cadmium source boat once
After long resistance placed in a quartz crystal tube sealed tube placed in the
heating furnace body horizontal zones, cadmium zinc telluride synthesized ingot,
after several purification zone melting ingot cadmium zinc telluride, and then by
boat is located in the zone melting crystal growth head seed arch constriction
inside I guide on CdZnTe ingot grown single crystals of cadmium zinc telluride.
The horizontal zone melting method for growing single crystals of cadmium zinc
telluride, comprising the steps of: high-purity tellurium and high-purity zinc or
zinc telluride synthetic material placed in the zone melting crystal growth boat,
will be placed in high-purity cadmium cadmium source boat and put a seed in the
constriction zone melting crystal growth in the boat's head; turn into cadmium
source boat and zone melting crystal growth crystal growth tube quartz boat,
quartz crystal growth after vacuum sealing tube tube; quartz crystal growth
pipe is placed on the furnace, so that the wafer boat length zone melting quartz
crystal growth within the tube in the zone melting crystal growth furnace
temperature control zone, cadmium cadmium source source boat in the furnace
temperature control zone; simultaneously elevated melting furnace in the
region and cadmium source crystal growth furnace temperature furnace until the
temperature rose to 600. After C, the heating rate is slowing 45~80 C / h, the
boat in which cadmium cadmium source source furnace temperature zone
temperature rose to 78 (TC~85 (after TC will not rise, zone melting crystal growth
furnace Pre-synthesis temperature of the thermostat zone rose to about 900 .C
cadmium zinc telluride ingot; Select zone melting crystal growth furnace in two
spaced a small distance 150~250mm stove, raising its temperature to 1150 C~
1200 C, the remaining small furnace temperature was maintained at 100
https://www.google.gm/patents/CN101210346A?cl=en&dq=Method+for+growing+tellurium-zinc-cadmium+crystals+by+using+tellurium+solvent+solution+meth 2/6
purity cadmium cadmium source boat (4), and in the zone melting
crystal growth boat (3) of the head neck (31) to place a seed (7); turn
cadmium Source boat (4) and zone melting crystal growth boat (3) into
the quartz tube crystal growth (2), quartz crystal growth tube (2) vacuum
sealed tube; long crystal quartz tube (2) in furnace (1), the quartz
crystal growth pipe zone melting crystal growth boat (1) (3) in the zone
melting crystal growth furnace (11) temperature zone, cadmium source
boat (4) in the cadmium source furnace ( 4) temperature control zone;
simultaneously increased furnace (1) of the zone melting crystal growth
furnace (11) and cadmium source furnace (12) of the temperature, when
the temperature rose to 60 (after TC, slow the rate of temperature rise
45~ 8 (TC / h, cadmium source boat (4) in which the cadmium source
furnace (12) temperature zone temperature was raised 780~85 (not rise
after the TC, zone melting crystal growth furnace (11) Temperature
temperature-controlled areas in the 850~950 "presynthesized C when
CdZnTe ingot; Select zone melting crystal growth furnace (11) in the
two separated by a distance 150~250mm small stove, raising its
temperature to 1150~1200 C, the remaining small furnace temperature
was maintained at 1000~1050 C, the first molten zone (5) and the
second melt zone (6) in the zone melting crystal growth occurs boat (3),
the mobile zone melting crystal growth furnace ( 11), so that the melt
zone from zone melting crystal growth boat (3) of the head began to
move to the rear direction, moving speed 10~20mm / h, to be the first
molten zone (5) to zone melting crystal growth boat (3) After the tail,
quickly FZ crystal growth furnace (11) to return to the starting position
and stop 5 to 15 minutes, start the next round of zone melting
purification, after several rounds of zone melting and purification to obtain
high-purity ingot cadmium zinc telluride ; reservations first molten
zone (5), and the melt pool to the zone melting crystal growth boat (3)
Head neck G1) position within the seed (7), reflow seed (7) 3 ~ 5mm,
then to 1~3mm / h the rate of growth of single crystals of cadmium zinc
telluride.
According to claim 4, wherein the horizontal zone melting cadmium zinc
telluride single crystal growth method, wherein the quartz crystal after a
long vacuum tube filled with hydrogen or argon.
6. The method of claim 4 horizontal zone melting growth of single
crystals of cadmium zinc telluride claim, wherein said high-purity
tellurium and high-purity zinc is placed in accordance with the following
methods zone melting crystal growth boat (3): According to the We
need to grow a single crystal of Cd ^ ZrixTe select X value, and then
divided into three equal parts high-purity tellurium evenly spread in the
zone melting crystal growth boat (3) of the head, middle and tail, zone
melting crystal growth boat (3) in the middle of high purity zinc in
accordance with the selected X value and high-purity tellurium is
proportional to the place, placed less zone melting crystal growth boat
(3) the amount of the head is placed relatively high purity zinc zone
melting crystal growth boat G) Central High Purity Zinc , zone melting
crystal growth boat (3) Place the amount of high-purity zinc tail longer
than the zone melting crystal boat (3) the amount of the central place of
the more high-purity zinc.
7. The method of claim 4 horizontal zone melting growth of single
crystals of cadmium zinc telluride claim, wherein the preparation of the
zinc telluride synthetic materials are: high-purity tellurium is placed in
the zone melting crystal growth boat ( 3), high-purity zinc cadmium
source placed in the boat (4), and the cadmium source boat (4) and
zone melting crystal growth boat (3) were placed in a quartz crystal
growth tube (2), the quartz crystal growth tube (2) into the furnace (1), so
that the zone melting crystal growth boat (3) in the horizontal zone
melting crystal growth furnace (11) temperature zone, so that the boat
3/1/2017 Patent CN101210346A - Horizontal zone melting method for growing tellurium zinc cadmium single-crystal - Google Patents
(TC~1050.C, first molten zone and the second melt zone appears on the zone cadmium source (4) is located cadmium source furnace (12 )
melting crystal growth boats, mobile zone melting crystal growth furnace, so that temperature control area; increased furnace (1), temperature, and
the melt zone from the melting zone long crystal head boat began to tail direction, cadmium source furnace (12) temperature zone temperature was
the moving speed of 10-20 leg / h, until after the tail of the first molten zone to maintained at 800~900 C; Select zone melting crystal growth
zone melting crystal growth boat quickly FZ crystal growth furnace will return to furnace (11) more than just adjacent small stove, while heating to 1200~
the starting position and pause 5 to 15 minutes, start the next round of zone 130 (TC, remaining small furnace temperature was maintained at
melting purification, after several rounds of zone melting and purification to obtain 1000~1100 C, to form a single large melt zone in the zone melting
high-purity tellurium cadmium zinc ingot; reservations first melt zone, and the crystal growth boat (3) to 3~5mm / h of For a slow moving zone melting
molten pool to the zone melting crystal growth boat necking in the seed head crystal growth furnace (11), zinc telluride generate synthetic material.
position, reflow seed 3mm~5mm, then to 1~3mm / h the rate of growth of single
crystals of cadmium zinc telluride. The quartz crystal after a long vacuum tube
filled with a certain The amount of hydrogen gas or high purity argon, high purity
tellurium and zinc according to the following method described zone melting crystal growth into the boat: select single crystal
X values as needed growth CdhXZnxTe, and then divided into three equal parts of a uniform high-purity tellurium shop in the
zone melting crystal growth boat's head, middle and tail, high purity zinc zone melting crystal growth in accordance with the
boat in the middle of the selected X value and high-purity tellurium is proportional to the placement, zone melting crystal
growth head high purity zinc boat The placement volume than the central zone melting crystal growth boat placed less high
purity zinc, placed amount placed amount zone melting high purity zinc long grain boat tail longer than the wafer boat zone
melting high purity zinc in the middle of many. The telluride preparation of zinc synthetic materials are: high-purity
tellurium is placed on a boat in the zone melting crystal growth, high purity zinc cadmium source placed in the boat, and the
boat cadmium source and zone melting crystal growth boats were placed in a quartz tube crystal growth , the quartz crystal
growth furnace tube into the boat so that the zone melting crystal growth in the horizontal zone melting crystal growth furnace
temperature control zone that cadmium source boat located cadmium source furnace temperature control zone; elevated
temperature furnace , and cadmium source furnace temperature zone temperature was maintained at S00~90 (TC; select
multiple zone melting crystal growth furnace adjacent to only a small stove, while heating to 1200~1300 C, the remaining
small furnace temperature was maintained at 1000~1100 C, in the zone melting crystal growth boat (3) to form a single
large melt zone to 3~5mm / h at a rate of slow-moving zone melting crystal growth furnace to produce zinc telluride synthetic
material. Technical effects of the invention : apparatus and method of the present invention horizontal zone melting growth
of single crystals of cadmium zinc telluride after a one-time charge in a sealed tube, after after repeated zone melting
purification and long process to obtain single-crystal cadmium zinc telluride single crystal, greatly reducing the artificial
impurity contamination and impurity tarnish instrument surfaces, production of cadmium zinc telluride single crystal purity
. apparatus and method of the present invention horizontal zone melting growth of single crystals of cadmium zinc telluride
dual zone melting to purify and improve the zone melting purification the efficiency and purity of the cadmium zinc telluride
ingots purified greatly improved apparatus and method of the present invention . horizontal zone melting growth of single
crystals of cadmium zinc telluride different proportions in the zone melting crystal growth boat ingredients, synthesized
cadmium zinc telluride single crystal ingot by the zone melting component after purification to achieve uniform distribution, to
ensure that the post-synthesis cadmium zinc telluride single crystal yield. Figure 1 is a horizontal section of the present
invention, melt growth structure diagram means a single crystal of cadmium zinc telluride. DETAILED DESCRIPTION OF
THE DRAWINGS and specific examples to elaborate apparatus and method of the present invention horizontal zone melting
growth of single crystals of cadmium zinc telluride single crystals of cadmium zinc telluride production process. But this
should not restrict the scope of the invention. See Figure 1, Figure 1 is a horizontal section of the present invention, melt
growth structure diagram means a single crystal of cadmium zinc telluride. As can be seen from the figure, the horizontal
area of the present invention melt cadmium zinc telluride single crystal growth apparatus comprises a furnace 1, quartz
crystal growth pipe 2, zone melting crystal growth and cadmium source boat boat 3 4: 1 including the temperature of the
furnace body They are connected end to end control of cadmium source 12 and the horizontal zone melting furnace crystal
growth furnace 11, the level of crystal growth furnace 11 in order of priority by the eight composed of a small stove; 1 placed
in the furnace tube 2 of quartz crystal growth, the quartz crystal growth pipe 2 equipped with cadmium source boat 4 and
zone melting crystal growth boat 3, 4 located cadmium cadmium source boat source furnace temperature zone 12, zone
melting crystal growth boat 3 is located in the zone melting crystal growth furnace temperature region 11; the zone melting
crystal growth above 3 boat with a head and tail necking necking 31 32. Example 1 Example using the apparatus and method
of the present invention, the epitaxial growth of HgCdTe desired substrate CdMeZnoWre (211) B single crystal, including the
following steps: to 99.99999% purity tellurium evenly laying on of graphite zone melting crystal growth boat 3, 99.99999%
of high-purity zinc is divided into head, middle and tail three equal portions, wherein the head by 1 percent molar ratio of 99%
zinc and cadmium ingredients, synthetic ingredients after melt Cd . .99Zna () 1Te; the tail of the molar ratio of 7% and 93%
zinc cadmium ingredients, synthesized melt component Cdo.wZno.wTe, while the middle is the molar ratio of 4% zinc and
96% cadmium, synthesized melt body is Cdo.96Zn honor Te, and zone melting crystal growth constriction 3 boat head 31 is
placed within a length of 30 legs 7 seed, will 99.99999% purity cadmium placed in a cadmium source boat 4; Cadmium
source boat turn 4 and zone melting long placed in a quartz wafer boat 3 crystal growth tube 2, in order to reduce evaporation
of cadmium zinc telluride, quartz crystal growth after 2 vacuum tube filled with a certain amount of argon as protective gas
then sealed tube; long quartz crystal tube 2 placed in the furnace body 1, so that a quartz crystal growth within the zone
melting tube length 3 in the wafer boat zone melting crystal growth furnace temperature region 11, cadmium source boat 4

https://www.google.gm/patents/CN101210346A?cl=en&dq=Method+for+growing+tellurium-zinc-cadmium+crystals+by+using+tellurium+solvent+solution+meth 3/6
3/1/2017 Patent CN101210346A - Horizontal zone melting method for growing tellurium zinc cadmium single-crystal - Google Patents
cadmium source in the furnace temperature region 12; while increasing furnace 1 FZ crystal growth furnace 11 and the
cadmium source oven temperature 12, at the same temperature, the vapor pressure of cadmium telluride vapor pressure than
an order of magnitude, can Cadmium steam evaporated steady stream of zone melting crystal growth to 3 transport boat, and
react chemically with tellurium, cadmium telluride generation, temperature

After when raised to 419'C, zinc begins to melt and the occurrence of a chemical reaction with tellurium, forming solid zinc
telluride, zinc due to the small number of, without causing drastic chemical reaction, when the temperature was raised to 60
(TC, cadmium transport speed, reaction and tellurium has accelerated, slowing the heating rate to 5 (T80.C / h, the boat in
which the source of cadmium cadmium source oven temperature zone temperature 12 to 78 (after TC no longer be maintained
elevated temperature zone melting crystal growth furnace temperature zone 11 to 90 (pre-synthesized crystals of cadmium
zinc telluride TC when the entire cadmium zinc telluride polycrystalline ingot remains solid, the original distribution of the
ingredients zinc because there presynthesized big changes do not appear; Select zone melting crystal growth furnace two
11 separated by a distance of 150mm small stove, raising its temperature to ii5crc, the remaining six small furnace
temperature was maintained at ioooxrc, in the zone melting length The first melt zone 5 and the second melt zone appears
on cadmium zinc telluride crystal ingot within 3 boat 6, the mobile zone melting crystal growth furnace, so that the melt zone
from the melting zone crystal growth head boat began to move to the rear third direction, moving speed of 10mm / h, due to
the zinc cadmium zinc telluride melt segregation coefficient greater than 1, so the zone melting purification make the zinc
content of the migration from the tail to the head, so to melt the zinc crystal growth in the region at the time of dosing boat 3
distribution is less head, tail and more, to be first out of the zone melting molten zone 5 long grain boat tail 3 after necking
32, quickly FZ crystal growth furnace 11 to return to the starting position and stop five minutes begin the next round of zone
melting purification, after repeated zone melting purification, the contaminants move FZ long grain boat tail 3 necking 32,
including two inner walls of impurities and quartz crystal growth pipe when contaminated ingredients dissolved impurities to
melt cadmium zinc telluride after repeated zone melting purification, these impurities is greatly reduced, and finally to obtain
high-purity ingot cadmium zinc telluride, cadmium zinc telluride ingot of the zinc content of close to 4 percent a considerable
part; reservations first molten zone 5 and 5 to move the first melt zone by zone melting crystal growth head boat neck
position 3 31 7 seed, seed reflow 7 of 3mm, and then to lmm / h speed zone melting crystal growth from boat head 3 will be
the growth of single crystals of cadmium zinc telluride to tail measurement of infrared transmittance 16pm, check out the
shallow level impurities in the substrate sheet, through the IO sub-zone melting purification, get 40% of the cadmium zinc
telluride single crystal substrate, the infrared transmittance at 16nm at over 60%, indicating a shallow level low impurity
content. structural integrity of the single crystals of cadmium zinc telluride better, XRD twinning half width of less than 40
arcsec, low dislocation density 105 / cm2, fully meet the requirements of HgCdTe epitaxial substrate. Example 2 Example
using the apparatus and method of the present invention, the growth of high-energy detector needed Cdo, 9Zii (uTe single .
crystal operation specifically includes the following: due to the high content of zinc single crystal Cdo.9ZiKuTe before zone
melting purification, zinc content of cadmium zinc telluride ingot tails up to 20%, if the cadmium zinc telluride single crystal
synthetic precursor Zinc placed directly on the zone melting crystal growth in contact with the boat within three tellurium,
zinc and tellurium chemical reaction is very intense when melted, the melt may be sprayed onto the outside of zone melting
crystal growth boat 3, in order to smoothly synthesize, keeping the whole content zone melting crystal growth starting boat 3
within the same distribution of zinc, must have been synthesized over zinc telluride synthetic material as raw material.
Synthesis of cadmium zinc telluride similar synthetic zinc telluride synthetic material, the steps in the apparatus of the
present invention, the synthetic follows: to 99.99999% purity tellurium is placed in the zone melting crystal growth boat 3,
99.99999% of high purity zinc cadmium source placed in the boat 4, and the cadmium source boat 4 and zone melting
crystal growth boat 3 were placed in quartz crystal growth tube 2, quartz crystal growth tube 2 placed in the furnace body 1,
so that cadmium source boat 4 in cadmium source furnace temperature zone 12, zone melting crystal growth boat 3 in zone
melting crystal growth furnace temperature control zone; elevated temperature furnace 1, and cadmium source
temperature zone furnace 12 cadmium source boat 4 temperature maintained at 900 C; Select zone melting crystal
growth furnace temperature zone 3 five adjacent small furnace while heating to 1290 C, the remaining small furnace
temperature was maintained at 1150 C, in the district Long form melt on the wafer boat 11 single melting zone to 5mm / h
at a rate of slow-moving, zinc telluride synthesized as synthetic materials. The use of the apparatus and method of the
present invention growth Cd energy detector needs. .9Zno., The following specific steps Te single crystals - to 99.99999%
purity tellurium spread evenly on the graphite boat of zone melting crystal growth within 3 zinc telluride synthetic material is
divided into head, middle and tail Third copies, of which the zone melting crystal growth boat head 3 at 2.5% zinc molar ratio
of ingredients, the tail of 17.5% zinc molar ratio of ingredients, and the middle 10% zinc molar ratio of ingredients and zone
melting crystal growth boat 3 is placed inside the neck of the head 31 of a length of 30mm seed 7, 99.99999% of cadmium
cadmium source placed in the boat. 4; turn cadmium source boat 4 and zone melting crystal growth crystal growth placed
in a quartz boat 3 tube 2, quartz crystal growth after 2 vacuum tube sealed tube, in order to reduce cadmium zinc telluride
evaporation, vacuum filled in after a certain amount of argon as a protective gas, then sealed tube; long quartz crystal tube
2 is placed within a furnace, the quartz crystal growth tube 1 of zone melting crystal growth boat 3 in zone melting crystal
growth furnace temperature region 11, the source of cadmium in cadmium boat 4 source region 12 of the furnace
temperature; simultaneously increased furnace 1 in 11 and cadmium source furnace temperature zone melting crystal
growth furnace 12 at the same temperature, the vapor pressure of cadmium vapor pressure is higher than an order of
magnitude tellurium, cadmium vapor can evaporate after a long steady flow of melt to the district 3 wafer boat transport, and
chemical reaction with tellurium, cadmium telluride generation, since the zinc telluride instead of metal zinc, so the

https://www.google.gm/patents/CN101210346A?cl=en&dq=Method+for+growing+tellurium-zinc-cadmium+crystals+by+using+tellurium+solvent+solution+meth 4/6
3/1/2017 Patent CN101210346A - Horizontal zone melting method for growing tellurium zinc cadmium single-crystal - Google Patents
temperature was raised to 419 "C, it will not happen with tellurium strong chemical reaction, when the temperature rise 60
(after TC, cadmium transport speed, reaction and tellurium also accelerated, to slow down the rate of temperature rise to 50
C / h, the boat in which cadmium cadmium source source oven temperature zone temperature 12 to 78 (after TC no longer
maintain elevated temperature zone melting crystal growth furnace temperature was raised to 900 zone 11 "pre-synthesized
crystals of cadmium zinc telluride C, so that the whole cadmium zinc telluride polycrystalline ingot remains solid, original
ingredients Distribution of zinc because there will not be a big presynthesized change; Select zone melting crystal growth
furnace two 11 separated by a distance of 150mm small stove, raising its temperature to 120 (TC, the remaining six small
oven temperature maintained at 105 (TC, first molten zone 5 and the second melt zone 6, the mobile zone melting crystal
growth furnace ll appear on the zone melting crystal growth boat 3, so that the zone melting zone melting crystal growth from
the boat began to head 3 aft direction, moving speed of 10mm / h, due to the zinc cadmium zinc telluride melt segregation
coefficient greater than 1, so the zone melting purification make the zinc content of the migration from the tail to the head,
and therefore when the zinc in the ingredients zone melting crystal growth boat 3 distribution is less head, tail and more, until
the second melt zone 6 out of zone melting crystal growth constriction 3 boat tail after 32, quickly FZ crystal growth furnace
11 to return to the starting position and stop 5 minutes, start the next round of zone melting purification, after repeated zone
melting purification, the impurity contamination zone melting crystal growth moved 3 boat tail necking 32, including an inner
tube 2 impurity quartz crystal growth dissolved to cadmium zinc telluride melt melting zone after purification is also greatly
reduced, and finally to obtain high-purity ingot cadmium zinc telluride, cadmium zinc telluride that make ingot zinc content in
a considerable part of the near brain; reservations first molten zone 5, and the molten pool to the zone melting crystal
growth head boat neck position 3 31 7 seed, seed after reflow 7 of 300 coffee, then lmm / h at a rate of self-FZ crystal growth
head to tail boat 3 were CdZnTe single crystal growth.

Cd obtained after completion of the group into the process. .9ZnaiTe Energetic detector material. During compounding
cadmium zinc telluride crystal synthesis ago, if the distribution of zinc telluride crystal component is 5%, respectively, in the
head, middle and tail, 20% and 35% zinc molar ratio of ingredients, the last group can get into Cd . .8Zn. .2Te Energetic
detector material. The above-described two kinds of high energy detector material obtained by testing 40% CdZnTe single
crystal 16 "m-infrared transmittance of more than 60%, indicating that the impurity content of less shallow level, high
resistivity material in 5X1 ( TQ .cm, in line with the requirements of high-energy detector. The present invention uses
horizontal zone melting cadmium zinc telluride single crystal growth apparatus and method is simple, rapid, growth
efficiency, while significantly reducing the pollution of impurities, to obtain high-purity tellurium zinc cadmium single crystal
substrate and energy in full compliance with the requirements of the detector material as mercury cadmium telluride epitaxial
growth. There is no doubt that the apparatus and method of the present invention horizontal zone melting growth of single
crystals of cadmium zinc telluride embodiments include value addition and outer transformation there are other connections
and numerical parameters, in short, the scope of the present invention horizontal zone melting cadmium zinc telluride single
crystal growth apparatus and method further includes additional apparent to those skilled in the art of transformation, and
alternatives.

REFERENCED BY

Citing Patent Filing date Publication date Applicant Title

Method and device for growing cadmium zinc telluride crystals in mobile
CN101871123A * 12 Jun 2010 27 Oct 2010
tellurium solvent melting zone
Method and device for growing cadmium zinc telluride crystals in mobile
CN101871123B 12 Jun 2010 7 Nov 2012
tellurium solvent melting zone
Horizontal vacuum zone-melting preparation method of high-purity
CN102392294A * 15 Nov 2011 28 Mar 2012
semiconductor material
Horizontal vacuum zone-melting preparation method of high-purity
CN102392294B 15 Nov 2011 9 Apr 2014
semiconductor material
Device for growing tellurium-zinc-cadmium crystals by traveling heater
CN102864496A * 20 Sep 2012 9 Jan 2013
method

CN103183322A * 28 Dec 2011 3 Jul 2013 Preparation method of high purity tellurium


CN103183322B * 28 Dec 2011 10 Dec 2014 Preparation method of high purity tellurium


CN103184347A * 28 Dec 2011 3 Jul 2013 Preparation method of high purity cadmium


CN103184347B 28 Dec 2011 17 Sep 2014 Preparation method of high purity cadmium

* Cited by examiner

CLASSIFICATIONS

International Classification C30B29/48

https://www.google.gm/patents/CN101210346A?cl=en&dq=Method+for+growing+tellurium-zinc-cadmium+crystals+by+using+tellurium+solvent+solution+meth 5/6
3/1/2017 Patent CN101210346A - Horizontal zone melting method for growing tellurium zinc cadmium single-crystal - Google Patents
LEGAL EVENTS
Date Code Event Description
2 Jul 2008 C06 Publication
27 Aug 2008 C10 Request of examination as to substance
13 Jul 2011 C14 Granted
27 Feb 2013 C17 Cessation of patent right

Google Home - Sitemap - USPTO Bulk Downloads - Privacy Policy - Terms of Service - About Google Patents - Send Feedback

https://www.google.gm/patents/CN101210346A?cl=en&dq=Method+for+growing+tellurium-zinc-cadmium+crystals+by+using+tellurium+solvent+solution+meth 6/6