IGP50N60T, IGB50N60T

TrenchStop Series IGW50N60T

Low Loss IGBT in Trench and Fieldstop technology

C
Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175 C
Short circuit withstand time 5s
G
Designed for : E
- Frequency Converters
- Uninterrupted Power Supply
Trench and Fieldstop technology for 600 V applications offers :
- very tight parameter distribution P-TO-247-3-1
(TO-220AC)
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI P-TO-220-3-1
(TO-220AB)
P-TO-263-3-2 (D-PAK)
(TO-263AB)
Low Gate Charge
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type VCE IC VCE(sat),Tj=25C Tj,max Marking Code Package Ordering Code

IGP50N60T 600 V 50 A 1.5 V 175 C G50T60 TO-220 Q67040S4723
IGB50N60T 600 V 50 A 1.5 V 175 C G50T60 TO-263 Q67040S4721
IGW50N60T 600 V 50 A 1.5 V 175 C G50T60 TO-247 Q67040S4725
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 600 V
DC collector current, limited by Tjmax IC A
TC = 25C 100
TC = 100C 50
Pulsed collector current, tp limited by Tjmax ICpuls 150
Turn off safe operating area (VCE 600V, Tj 175C) - 150
Gate-emitter voltage VGE 20 V
1)
Short circuit withstand time tSC 5 s
VGE = 15V, VCC 400V, Tj 150C
Power dissipation TC = 25C Ptot 333 W
Operating junction temperature Tj -40...+175 C
Storage temperature Tstg -55...+175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 1 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance, RthJC 0.45 K/W
junction case
Thermal resistance, RthJA TO-220-3-1 62
junction ambient TO-247-3-1 40
TO-263-3-2 (6cm Cu) 40

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. Typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 0. 2mA 600 - - V
Collector-emitter saturation voltage VCE(sat) V G E = 15V, I C = 50A
T j = 25 C - 1.5 2.0
T j = 17 5 C - 1.9 -
Gate-emitter threshold voltage VGE(th) I C = 0. 8mA, V C E = V G E 4.1 4.9 5.7
Zero gate voltage collector current ICES V C E = 600V , A
V G E = 0V
T j = 25 C - - 40
T j = 17 5 C - - 1000
Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - 100 nA
Transconductance gfs V C E = 20V, I C = 50A - 31 - S
Integrated gate resistor RGint -

Dynamic Characteristic
Input capacitance Ciss V C E = 25V, - 3140 - pF
Output capacitance Coss V G E = 0V, - 200 -
Reverse transfer capacitance Crss f= 1 M Hz - 93 -
Gate charge QGate V C C = 4 80V, I C = 50A - 310 - nC
V G E = 1 5V
Internal emitter inductance LE T O -247-3- 1 - 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1) IC(SC) V G E = 1 5V,t S C 5s - 458.3 - A
V C C = 400V,
T j 150 C

1)
Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors 2 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T
Switching Characteristic, Inductive Load, at Tj=25 C
Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 25 C, - 26 - ns
Rise time tr V C C = 4 00V, I C = 50A, - 29 -
V G E = 0/ 1 5V ,
Turn-off delay time td(off) RG= 7 , - 299 -
Fall time tf L 1 ) = 103nH, - 29 -
Turn-on energy Eon C 1 ) =39pF - 1.2 - mJ
Energy losses include
Turn-off energy Eoff tail and diode - 1.4 -
Total switching energy Ets reverse recovery.2) - 2.6 -

Switching Characteristic, Inductive Load, at Tj=150 C

Value
Parameter Symbol Conditions Unit
min. Typ. max.
IGBT Characteristic
Turn-on delay time td(on) T j = 17 5 C, - 27 - ns
Rise time tr V C C = 4 00V, I C = 50A, - 33 -
V G E = 0/ 1 5V ,
Turn-off delay time td(off) RG= 7 - 341 -
Fall time tf L 1 ) = 103nH, - 55 -
Turn-on energy Eon C 1 ) =39pF - 1.8 - mJ
Energy losses include
Turn-off energy Eoff tail and diode - 1.8 -
2)
Total switching energy Ets reverse recovery. - 3.6 -

1)
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.
2)
Includes Reverse Recovery Losses from IKW50N60T due to dynamic test circuit in Figure E.

Power Semiconductors 3 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T

t p=2s
140A 100A

120A
10s
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

100A
T C =80C
80A 10A 50s
T C =110C
60A

40A Ic
1ms
20A Ic 1A DC 10ms
0A
100H z 1kH z 10kH z 100kH z
1V 10V 100V 1000V

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function of Figure 2. Safe operating area
switching frequency (D = 0, TC = 25C, Tj 175C;
(Tj 175C, D = 0.5, VCE = 400V, VGE=15V)
VGE = 0/+15V, RG = 7)

300W
80A

250W
IC, COLLECTOR CURRENT
POWER DISSIPATION

60A
200W

150W 40A

100W
Ptot,

20A
50W

0A
0W 25C 75C 125C
25C 50C 75C 100C 125C 150C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function of Figure 4. Collector current as a function of
case temperature case temperature
(Tj 175C) (VGE 15V, Tj 175C)

Power Semiconductors 4 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T

120A 120A

V GE =20V V GE =20V
100A 100A
IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

15V 15V
80A 13V 13V
80A
11V 11V
60A 9V 60A 9V
7V 7V
40A 40A

20A 20A

0A 0A
0V 1V 2V 3V 0V 1V 2V 3V 4V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj = 25C) (Tj = 175C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

2.5V IC =100A
80A
IC, COLLECTOR CURRENT

2.0V

60A
IC =50A
1.5V

40A
1.0V IC =25A

20A T J = 1 7 5 C
0.5V
2 5 C

0A 0.0V
0V 2V 4V 6V 8V 0C 50C 100C 150C

VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter
(VCE=20V) saturation voltage as a function of
junction temperature
(VGE = 15V)

Power Semiconductors 5 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T

t d(off)
t d(off)
t, SWITCHING TIMES

t, SWITCHING TIMES
100ns tr
tf
100ns
tf

t d(on)
tr

10ns t d(on)

10ns
0A 20A 40A 60A 80A 0 5 10 15 20 25

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as a Figure 10. Typical switching times as a
function of collector current function of gate resistor
(inductive load, TJ=175C, (inductive load, TJ = 175C,
VCE = 400V, VGE = 0/15V, RG = 7, VCE= 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

7V

t d(off) 6V
VGE(th), GATE-EMITT TRSHOLD VOLTAGE

m ax.
typ.
5V
t, SWITCHING TIMES

100ns
4V m in.
tf
3V
tr

2V
t d(on)
1V

10ns 0V
25C 50C 75C 100C 125C 150C -50C 0C 50C 100C 150C

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a Figure 12. Gate-emitter threshold voltage as
function of junction temperature a function of junction temperature
(inductive load, VCE = 400V, (IC = 0.8mA)
VGE = 0/15V, IC = 50A, RG=7,
Dynamic test circuit in Figure E)

Power Semiconductors 6 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T
*) Eon and Ets include losses *) E on a nd E ts include losses
Ets*
due to diode recovery
6.0m J d ue to diode re co ve ry
8.0mJ
E ts *
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

5.0m J

6.0mJ
Eon* 4.0m J

4.0mJ 3.0m J

Eoff E off
2.0m J
2.0mJ
E on *
1.0m J

0.0mJ 0.0m J
0A 20A 40A 60A 80A 0 10 20

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy losses Figure 14. Typical switching energy losses
as a function of collector current as a function of gate resistor
(inductive load, TJ = 175C, (inductive load, TJ = 175C,
VCE = 400V, VGE = 0/15V, RG = 7, VCE = 400V, VGE = 0/15V, IC = 50A,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

*) Eon and Ets include losses *) E on and E ts include losses

due to diode recovery
due to diode recovery
Ets* 4m J
E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

3.0mJ

3m J E on *

2.0mJ E ts *
Eoff
2m J
E off
1.0mJ
Eon*
1m J

0.0mJ 0m J
25C 50C 75C 100C 125C 150C 300V 350V 400V 450V 500V 550V
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses Figure 16. Typical switching energy losses
as a function of junction as a function of collector emitter
temperature voltage
(inductive load, VCE = 400V, (inductive load, TJ = 175C,
VGE = 0/15V, IC = 50A, RG = 7, VGE = 0/15V, IC = 50A, RG = 7,
Dynamic test circuit in Figure E) Dynamic test circuit in Figure E)

Power Semiconductors 7 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T

C iss
VGE, GATE-EMITTER VOLTAGE

1 5V 1nF

c, CAPACITANCE
12 0V

4 80 V
1 0V

C oss

5V 100pF

C rss

0V 0V 10V 20V 30V 40V

0nC 1 00n C 2 00n C 3 00 nC

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge Figure 18. Typical capacitance as a function
(IC=50 A) of collector-emitter voltage
(VGE=0V, f = 1 MHz)

12s
800A
IC(sc), short circuit COLLECTOR CURRENT

SHORT CIRCUIT WITHSTAND TIME

700A 10s

600A
8s

500A
6s
400A

300A 4s

200A
2s
tSC,

100A
0s
0A 10V 11V 12V 13V 14V
12V 14V 16V 18V

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collector Figure 20. Short circuit withstand time as a
current as a function of gate- function of gate-emitter voltage
emitter voltage (VCE=600V, start at TJ=25C,
(VCE 400V, Tj 150C) TJmax<150C)

Power Semiconductors 8 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T

D=0.5
ZthJC, TRANSIENT THERMAL RESISTANCE

-1 0.2
10 K/W

0.1
R,(K/W) , (s)
-2
0.18355 7.425*10
0.05 0.12996 8.34*10
-3
-4
0.09205 7.235*10
-4
0.03736 1.035*10
-5
0.00703 4.45*10
-2 0.02 R1 R2
10 K/W

0.01
C1= 1/R1 C2=2/R2
single pulse

1s 10s 100s 1ms 10ms 100ms

tP, PULSE WIDTH
Figure 21. IGBT transient thermal resistance
(D = tp / T)

Power Semiconductors 9 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T
TO-220AB Dimensions
symbol [mm] [inch]
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.7 0.1398 0.1457
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M 2.54 typ. 0.1 typ.
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071

TO-263AB (D2Pak) dimensions

symbol [mm] [inch]
min max min max
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E 2.54 typ. 0.1 typ.
F 0.65 0.85 0.0256 0.0335
G 5.08 typ. 0.2 typ.
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N 15 typ. 0.5906 typ.
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R 8 max 8 max
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U 10.80 0.4252
V 1.15 0.0453
W 6.23 0.2453
X 4.60 0.1811
Y 9.40 0.3701
Z 16.15 0.6358

Power Semiconductors 10 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T

TO-247AC dimensions
symbol [mm] [inch]
min max min max
A 4.78 5.28 0.1882 0.2079
B 2.29 2.51 0.0902 0.0988
C 1.78 2.29 0.0701 0.0902
D 1.09 1.32 0.0429 0.0520
E 1.73 2.06 0.0681 0.0811
F 2.67 3.18 0.1051 0.1252
G 0.76 max 0.0299 max
H 20.80 21.16 0.8189 0.8331
K 15.65 16.15 0.6161 0.6358
L 5.21 5.72 0.2051 0.2252
M 19.81 20.68 0.7799 0.8142
N 3.560 4.930 0.1402 0.1941
P 3.61 0.1421
Q 6.12 6.22 0.2409 0.2449

Power Semiconductors 11 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T
i,v

diF /dt tr r =tS +tF

Qr r =QS +QF

tr r
IF tS tF

QS QF 10% Ir r m t
Ir r m
dir r /dt VR
90% Ir r m

Figure C. Definition of diodes

switching characteristics

1 2 n
r1 r2 rn
Tj (t)

p(t)
r1 r2 rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure B. Definition of switching losses Figure E. Dynamic test circuit

Power Semiconductors 12 Rev. 2.2 Dec-04

 IGP50N60T, IGB50N60T
TrenchStop Series IGW50N60T
Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2004
All Rights Reserved.

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descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.

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For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
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Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors 13 Rev. 2.2 Dec-04

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